PBYR2545CTB

Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PBYR2545CTB series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) PARAMETER MAX. MAX. MAX. UNIT V V A PBYR25- 35CTB 40CTB 45CTB Repetitive peak reverse 35 40 45 voltage Forward voltage 0.62 0.62 0.62 Average output current 30 30 30 (both diodes conducting) PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION anode 1 cathode anode 2 cathode PIN CONFIGURATION mb SYMBOL a1 1 2 1 3 a2 3 k2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 60 35 MAX. -40 40 80 40 30 43 30 135 150 -45 45 100 45 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 136 ˚C Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; δ = 0.5; Tmb ≤ 130 ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.5; Tmb ≤ 130 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode. Non-repetitive peak reverse tp = 100 µs current per diode. Storage temperature Operating junction temperature -65 - 91 1 1 175 150 A2s A A ˚C ˚C August 1996 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes minumum footprint, FR4 board PBYR2545CTB series MIN. - TYP. 50 MAX. 1.5 1.0 - UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Cd PARAMETER Forward voltage (per diode) Reverse current (per diode) Junction capacitance (per diode) CONDITIONS IF = 30 A; Tj = 125˚C IF = 20 A; Tj = 125˚C IF = 30 A VR = VRRM VR = VRRM; Tj = 125 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C MIN. TYP. 0.65 0.53 0.77 100 12 800 MAX. 0.73 0.62 0.82 200 40 UNIT V V V µA mA pF August 1996 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR2545CTB series 15 PF / W Vo = 0.302 Rs = 0.012 PBYR1645 Tmb(max) / C D = 1.0 0.5 127.5 IR / mA 100 150 C 10 PBYR1645 10 0.1 0.2 135 125 C 1 100 C 5 I tp D= tp T t 142.5 0.1 75 C Tj = 50 C T 0 0 5 10 15 IF(AV) / A 20 150 25 0.01 0 25 VR/ V 50 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. PF / W Vo = 0.302 Rs = 0.012 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj 12 10 PBYR1645 Tmb(max) / C 132 a = 1.57 2.2 1.9 135 138 141 144 147 150 15 Cd / pF 10000 PBYR1645 2.8 8 6 4 2 0 4 1000 0 5 IF(AV) / A 10 100 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). IF / A Tj = 25 C Tj = 125 C 40 PBYR1645 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. 50 Zth j-mb (K/W) 10 max typ 1 30 20 0.1 10 P D tp t 0 0.01 0 0.2 0.4 0.6 0.8 VF / V 1 1.2 1.4 10us 1ms tp / s 0.1s 10s Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). August 1996 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max 4.5 max 1.4 max PBYR2545CTB series 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.7. SOT404 : centre pin connected to mounting base. Notes 1. Epoxy meets UL94 V0 at 1/8". August 1996 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYR2545CTB series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 5 Rev 1.000