PDTB113Z series
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 1 kΩ, R2 = 10 kΩ
Rev. 02 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1.
Product overview
Type number
Package
NPN complement
NXP
JEITA
JEDEC
PDTB113ZK
SOT346
SC-59A
TO-236
PDTD113ZK
PDTB113ZS[1]
SOT54
SC-43A
TO-92
PDTD113ZS
PDTB113ZT
SOT23
-
TO-236AB
PDTD113ZT
[1]
Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
Built-in bias resistors
Simplifies circuit design
500 mA output current capability
Reduces component count
Reduces pick and place costs
±10 % resistor ratio tolerance
1.3 Applications
Digital application in automotive and
industrial segments
Controlling IC inputs
Cost-saving alternative for BC807 series
in digital applications
Switching loads
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
−50
V
IO
output current (DC)
-
-
−500
mA
R1
bias resistor 1 (input)
0.7
1.0
1.3
kΩ
R2/R1
bias resistor ratio
9
10
11
PDTB113Z series
NXP Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Symbol
SOT54
1
input (base)
2
output (collector)
3
GND (emitter)
2
R1
1
2
3
1
R2
001aab347
3
006aaa148
SOT54A
1
input (base)
2
output (collector)
3
GND (emitter)
2
R1
1
2
1
R2
3
001aab348
3
006aaa148
SOT54 variant
1
input (base)
2
output (collector)
3
GND (emitter)
2
R1
1
2
3
1
R2
001aab447
3
006aaa148
SOT23, SOT346
1
input (base)
2
GND (emitter)
3
3
3
R1
output (collector)
1
R2
1
2
006aaa144
PDTB113Z_SER_2
Product data sheet
2
sym003
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
2 of 10
PDTB113Z series
NXP Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PDTB113ZK
SC-59A
plastic surface mounted package; 3 leads
SOT346
PDTB113ZS[1]
SC-43A
plastic single-ended leaded (through hole) package;
3 leads
SOT54
PDTB113ZT
-
plastic surface mounted package; 3 leads
SOT23
[1]
Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PDTB113ZK
E6
PDTB113ZS
B113ZS
PDTB113ZT
*7W
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−50
V
VCEO
collector-emitter voltage
open base
-
−50
V
VEBO
emitter-base voltage
open collector
-
−5
V
VI
input voltage
positive
-
+5
V
negative
-
−10
V
-
−500
mA
IO
output current (DC)
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT346
[1]
-
250
mW
SOT54
[1]
-
500
mW
SOT23
[1]
-
250
mW
°C
Tstg
storage temperature
−65
+150
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PDTB113Z_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
3 of 10
PDTB113Z series
NXP Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
[1]
Thermal characteristics
Parameter
Min
Typ
Max
Unit
SOT346
-
-
500
K/W
SOT54
-
-
250
K/W
SOT23
-
-
500
K/W
thermal resistance
from junction to
ambient
Conditions
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
ICBO
Conditions
Min
Typ
Max
Unit
collector-base cut-off VCB = −40 V; IE = 0 A
current
VCB = −50 V; IE = 0 A
-
-
−100
nA
-
-
−100
nA
ICEO
collector-emitter
cut-off current
VCE = −50 V; IB = 0 A
-
-
−0.5
μA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−0.8
mA
hFE
DC current gain
VCE = −5 V; IC = −50 mA
70
-
-
VCEsat
collector-emitter
saturation voltage
IC = −50 mA; IB = −2.5 mA
-
-
−0.3
mV
VI(off)
off-state input
voltage
VCE = −5 V; IC = −100 μA
−0.3
−0.6
−1.0
V
VI(on)
on-state input
voltage
VCE = −0.3 V;
IC = −20 mA
−0.4
−0.8
−1.4
V
R1
bias resistor 1 (input)
0.7
1.0
1.3
kΩ
R2/R1
bias resistor ratio
9
10
11
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 100 MHz
-
11
-
PDTB113Z_SER_2
Product data sheet
pF
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
4 of 10
PDTB113Z series
NXP Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
006aaa349
103
006aaa350
−10−1
(1)
hFE
(1)
(2)
(2)
(3)
VCEsat
(V)
(3)
102
10
1
−10−1
−1
−10
−102
IC (mA)
−103
−10−2
VCE = −5 V
−1
−10
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
DC current gain as a function of collector
current; typical values
006aaa351
−10
VI(on)
(V)
Fig 2.
−103
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa352
−10
VI(off)
(V)
(1)
(1)
(2)
−1
−1
(2)
−1
(3)
−10−1
−10−1
−10
−102
IC (mA)
−103
(3)
−10−1
−10−1
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
IC (mA)
−10
(3) Tamb = 100 °C
On-state input voltage as a function of
collector current; typical values
Fig 4.
Off-state input voltage as a function of
collector current; typical values
PDTB113Z_SER_2
Product data sheet
−1
VCE = −5 V
(1) Tamb = −40 °C
Fig 3.
IC (mA)
IC/IB = 20
(2) Tamb = 25 °C
Fig 1.
−102
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
5 of 10
PDTB113Z series
NXP Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
8. Package outline
1.3
1.0
3.1
2.7
3
0.45
0.38
4.2
3.6
0.6
0.2
0.48
0.40
3.0 1.7
2.5 1.3
1
2
4.8
4.4
1
1.27
2
0.50
0.35
1.9
0.26
0.10
Dimensions in mm
Fig 5.
2.54
3
5.2
5.0
04-11-11
Dimensions in mm
Package outline SOT346 (SC-59A/TO-236)
Fig 6.
04-11-16
Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
0.45
0.38
4.2
3.6
14.5
12.7
4.2
3.6
1.27
0.48
0.40
3 max
1
2.5
max
0.48
0.40
1
2
4.8
4.4
5.08
2
4.8
4.4
2.54
2.54
3
1.27
3
5.2
5.0
5.2
5.0
14.5
12.7
Dimensions in mm
Fig 7.
04-06-28
14.5
12.7
Dimensions in mm
Package outline SOT54A
Fig 8.
05-01-10
Package outline SOT54 variant
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
Fig 9.
0.15
0.09
04-11-04
Package outline SOT23 (TO-236AB)
PDTB113Z_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
6 of 10
PDTB113Z series
NXP Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
5000
10000
PDTB113ZK
SOT346
4 mm pitch, 8 mm tape and reel -115
-
-135
PDTB113ZS
SOT54
bulk, straight leads
-
-412
-
SOT54A
tape and reel, wide pitch
-
-
-116
3000
PDTB113ZT
[1]
tape ammopack, wide pitch
-
-
-126
SOT54 variant
bulk, delta pinning
-
-112
-
SOT23
4 mm pitch, 8 mm tape and reel -215
-
-235
For further information and the availability of packing methods, see Section 12.
PDTB113Z_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
7 of 10
PDTB113Z series
NXP Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PDTB113Z_SER_2
20091116
Product data sheet
-
PDTB113Z_SER_1
Modifications:
PDTB113Z_SER_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
20050427
Product data sheet
-
PDTB113Z_SER_2
Product data sheet
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
8 of 10
PDTB113Z series
NXP Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTB113Z_SER_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 16 November 2009
9 of 10
PDTB113Z series
NXP Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 November 2009
Document identifier: PDTB113Z_SER_2
