PDTC143E

DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 05 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PDTC143E series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. − − 4.7 4.7 MAX. 50 100 − − UNIT V mA kΩ kΩ NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTC143EE PDTC143EEF PDTC143EK PDTC143EM PDTC143ES PDTC143ET PDTC143EU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 02 51 02 E1 TC143E *02 *02 PDTA143EE PDTA143EEF PDTA143EK PDTA143EM PDTA143ES PDTA143ET PDTA143EU MARKING CODE(1) PNP COMPLEMENT 2004 Aug 05 2 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING PDTC143E series PINNING TYPE NUMBER PDTC143ES handbook, halfpage SIMPLIFIED OUTLINE AND SYMBOL PIN 1 2 2 R1 1 R2 3 MAM364 DESCRIPTION base collector emitter 1 2 3 3 PDTC143EE PDTC143EEF PDTC143EK PDTC143ET PDTC143EU 1 Top view 2 MDB269 1 2 handbook, halfpage base emitter collector 3 R1 1 R2 3 3 2 PDTC143EM handbook, halfpage 1 2 3 R1 1 3 1 bottom view MHC506 base emitter collector 3 2 R2 2 2004 Aug 05 3 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PDTC143EE PDTC143EEF PDTC143EK PDTC143EM PDTC143ES PDTC143ET PDTC143EU − − − − − − − DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads PDTC143E series VERSION SOT416 SOT490 SOT346 SOT883 SOT54 SOT23 SOT323 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm plastic single-ended leaded (through hole) package; 3 leads plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot output current (DC) peak collector current total power dissipation SOT54 SOT23 SOT346 SOT323 SOT416 SOT883 SOT490 Tstg Tj Tamb Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C note 1 note 1 note 1 note 1 note 1 notes 2 and 3 notes 1 and 2 − − − − − − − −65 − −65 500 250 250 200 150 250 250 +150 150 +150 mW mW mW mW mW mW mW °C °C °C − − − − +30 −10 100 100 V V mA mA CONDITIONS open emitter open base open collector − − − MIN. MAX. 50 50 10 V V V UNIT 2004 Aug 05 4 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ THERMAL CHARACTERISTICS SYMBOL Rth(j-a) SOT54 SOT23 SOT346 SOT323 SOT416 SOT883 SOT490 Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz CONDITIONS VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 10 mA IC = 100 μA; VCE = 5 V IC = 20 mA; VCE = 0.3 V PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 1 note 1 note 1 note 1 notes 2 and 3 notes 1 and 2 PDTC143E series VALUE 250 500 500 625 833 500 500 UNIT K/W K/W K/W K/W K/W K/W K/W MIN. − − − − 30 − − 2.5 3.3 0.8 − TYP. − − − − − − 1.1 1.9 4.7 1 − MAX. 100 1 50 900 − 150 0.5 − 6.1 1.2 2.5 UNIT nA μA μA μA mV V V kΩ collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA pF 2004 Aug 05 5 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ PACKAGE OUTLINES Plastic surface-mounted package; 3 leads PDTC143E series SOT416 D B E A X vMA HE 3 Q A 1 e1 e bp 2 wM B A1 c Lp detail X 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT416 REFERENCES IEC JEDEC JEITA SC-75 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 2004 Aug 05 6 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ PDTC143E series Plastic surface-mounted package; 3 leads SOT346 E D B A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.3 1.0 A1 0.1 0.013 bp 0.50 0.35 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 1.9 e1 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 OUTLINE VERSION SOT346 REFERENCES IEC JEDEC TO-236 JEITA SC-59A EUROPEAN PROJECTION ISSUE DATE 04-11-11 06-03-16 2004 Aug 05 7 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ PDTC143E series Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 L 2 b e L1 3 b1 1 e1 A A1 E D 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.20 0.12 b1 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e 0.35 e1 0.65 L 0.30 0.22 L1 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 REFERENCES IEC JEDEC JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 2004 Aug 05 8 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ PDTC143E series Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 2004 Aug 05 9 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ PDTC143E series Plastic surface-mounted package; 3 leads SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 2004 Aug 05 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ PDTC143E series Plastic surface-mounted package; 3 leads SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 2004 Aug 05 11 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ PDTC143E series Plastic surface-mounted package; 3 leads SOT490 D B E A X HE vMA 3 A 1 e1 e bp 2 wMB Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.8 0.6 bp 0.33 0.23 c 0.2 0.1 D 1.7 1.5 E 0.95 0.75 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.5 0.3 v 0.1 w 0.1 OUTLINE VERSION SOT490 REFERENCES IEC JEDEC JEITA SC-89 EUROPEAN PROJECTION ISSUE DATE 05-07-28 06-03-16 2004 Aug 05 12 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION PDTC143E series This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 Aug 05 13 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/09/pp14 Date of release: 2004 Aug 05 Document order number: 9397 750 13674