PESD1CAN
CAN bus ESD protection diode
Rev. 04 — 15 February 2008
Product data sheet
1. Product profile
1.1 General description
PESD1CAN in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package designed to protect two automotive Controller Area Network (CAN) bus lines
from the damage caused by ElectroStatic Discharge (ESD) and other transients.
1.2 Features
n Due to the integrated diode structure only one small SOT23 package is needed to
protect two CAN bus lines
n Max. peak pulse power: PPP = 200 W at tp = 8/20 µs
n Low clamping voltage: VCL = 40 V at IPP = 1 A
n Ultra low leakage current: IRM < 1 nA
n Typ. diode capacitance matching: ∆Cd/Cd = 0.1 %
n ESD protection up to 23 kV
n IEC 61000-4-2, level 4 (ESD)
n IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs
n Small SMD plastic package
1.3 Applications
n CAN bus protection
n Automotive applications
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
24
V
-
11
17
pF
Per diode
VRWM
reverse standoff voltage
Cd
diode capacitance
f = 1 MHz; VR = 0 V
PESD1CAN
Nexperia
CAN bus ESD protection diode
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode 1
2
cathode 2
3
common cathode
Simplified outline
Symbol
3
1
3
1
2
2
006aaa155
3. Ordering information
Table 3.
Ordering information
Type number
PESD1CAN
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PESD1CAN
*AN
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PPP
peak pulse power
tp = 8/20 µs
[1][2]
-
200
W
IPP
peak pulse current
tp = 8/20 µs
[1][2]
-
3
A
Per diode
Per device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 3 or 2 to 3.
©
PESD1CAN_4
Product data sheet
Rev. 04 — 15 February 2008
Nexperia B.V. 2017. All rights reserved
2 of 12
PESD1CAN
Nexperia
CAN bus ESD protection diode
Table 6.
ESD maximum ratings
Symbol
Parameter
Conditions
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
23
kV
-
10
kV
Per diode
VESD
[1][2]
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to 3 or 2 to 3.
Table 7.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
001aaa631
001aaa630
120
IPP
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
t
tr = 0.7 ns to 1 ns
0
0
10
20
30
30 ns
40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
©
PESD1CAN_4
Product data sheet
Rev. 04 — 15 February 2008
Nexperia B.V. 2017. All rights reserved
3 of 12
PESD1CAN
Nexperia
CAN bus ESD protection diode
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VRWM
reverse standoff voltage
-
-
24
V
IRM
reverse leakage current
VRWM = 24 V
-
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