PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
Rev. 02 — 25 August 2009 Product data sheet
1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients.
1.2 Features
I I I I ESD protection of two lines Max. peak pulse power: PPP = 350 W Low clamping voltage: VCL = 26 V Small SMD plastic package I I I I Ultra low leakage current: IRM < 90 nA ESD protection up to 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 15 A
1.3 Applications
I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection
1.4 Quick reference data
Table 1. Symbol VRWM Quick reference data Parameter reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Cd diode capacitance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VR = 0 V; f = 1 MHz 101 75 19 16 11 pF pF pF pF pF 3.3 5.0 12 15 24 V V V V V Conditions Min Typ Max Unit
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description cathode 1 cathode 2 double cathode
1 2
2
006aaa155
Simplified outline
3
Symbol
1 3
3. Ordering information
Table 3. Ordering information Package Name PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Description plastic surface mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4. Marking codes Marking code[1] V3* V4* V5* V6* V7* Type number PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
PESDXL2BT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 August 2009
2 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP peak pulse current PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Tj Tamb Tstg
[1] [2]
Conditions tp = 8/20 µs
[1][2]
Min -
Max 350 350 200 200 200 15 13 5 5 3 150 +150 +150
Unit W W W W W A A A A A °C °C °C
tp = 8/20 µs
[1][2]
−65 −65
junction temperature ambient temperature storage temperature
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 to 3 or 2 to 3.
Table 6. Symbol VESD
ESD maximum ratings Parameter electrostatic discharge voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT PESDxL2BT series HBM MIL-STD883 23 10 kV kV Conditions IEC 61000-4-2 (contact discharge)
[1][2]
Min
Max
Unit
-
30
kV
[1] [2]
Device stressed with ten non-repetitive ESD pulses. Measured from pin 1 to 3 or 2 to 3.
Table 7.
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
ESD Standard IEC 61000-4-2, level 4 (ESD) HBM MIL-STD883, class 3
PESDXL2BT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 August 2009
3 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
001aaa631
120 IPP (%) 80 100 % IPP; 8 µs
001aaa630
IPP 100 % 90 %
e−t 50 % IPP; 20 µs
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (µs) 40 30 ns 60 ns t
0
Fig 1.
8/20 µs pulse waveform according to IEC 61000-4-5
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
PESDXL2BT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 August 2009
4 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
6. Characteristics
Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VRWM Parameter reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IRM reverse leakage current PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VBR breakdown voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Cd diode capacitance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VCL clamping voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP = 1 A IPP = 15 A IPP = 1 A IPP = 13 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 3 A
[1][2]
Conditions
Min -
Typ 0.09 0.01
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