PESD24VL2BT

PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Rev. 02 — 25 August 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients. 1.2 Features I I I I ESD protection of two lines Max. peak pulse power: PPP = 350 W Low clamping voltage: VCL = 26 V Small SMD plastic package I I I I Ultra low leakage current: IRM < 90 nA ESD protection up to 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 15 A 1.3 Applications I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Symbol VRWM Quick reference data Parameter reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Cd diode capacitance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VR = 0 V; f = 1 MHz 101 75 19 16 11 pF pF pF pF pF 3.3 5.0 12 15 24 V V V V V Conditions Min Typ Max Unit NXP Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 2. Pinning information Table 2. Pin 1 2 3 Pinning Description cathode 1 cathode 2 double cathode 1 2 2 006aaa155 Simplified outline 3 Symbol 1 3 3. Ordering information Table 3. Ordering information Package Name PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Description plastic surface mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. Marking codes Marking code[1] V3* V4* V5* V6* V7* Type number PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 25 August 2009 2 of 14 NXP Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP peak pulse current PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Tj Tamb Tstg [1] [2] Conditions tp = 8/20 µs [1][2] Min - Max 350 350 200 200 200 15 13 5 5 3 150 +150 +150 Unit W W W W W A A A A A °C °C °C tp = 8/20 µs [1][2] −65 −65 junction temperature ambient temperature storage temperature Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 to 3 or 2 to 3. Table 6. Symbol VESD ESD maximum ratings Parameter electrostatic discharge voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT PESDxL2BT series HBM MIL-STD883 23 10 kV kV Conditions IEC 61000-4-2 (contact discharge) [1][2] Min Max Unit - 30 kV [1] [2] Device stressed with ten non-repetitive ESD pulses. Measured from pin 1 to 3 or 2 to 3. Table 7. ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV ESD Standard IEC 61000-4-2, level 4 (ESD) HBM MIL-STD883, class 3 PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 25 August 2009 3 of 14 NXP Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 001aaa631 120 IPP (%) 80 100 % IPP; 8 µs 001aaa630 IPP 100 % 90 % e−t 50 % IPP; 20 µs 40 10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (µs) 40 30 ns 60 ns t 0 Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 25 August 2009 4 of 14 NXP Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VRWM Parameter reverse standoff voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IRM reverse leakage current PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VBR breakdown voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT Cd diode capacitance PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT VCL clamping voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP = 1 A IPP = 15 A IPP = 1 A IPP = 13 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 3 A [1][2] Conditions Min - Typ 0.09 0.01