PESD3V3S1UB

PESDxS1UB series ESD protection diodes in SOD523 package Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and other transients. 1.2 Features I I I I I I I Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20 µs 1.3 Applications I I I I I Computers and peripherals Communication systems Audio and video equipment Data lines CAN bus protection 1.4 Quick reference data Table 1. Symbol VRWM Quick reference data Parameter reverse standoff voltage PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB 3.3 5 12 15 24 V V V V V Conditions Value Unit NXP Semiconductors PESDxS1UB series ESD protection diodes in SOD523 package Quick reference data …continued Parameter diode capacitance PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB number of protected lines Conditions VR = 0 V; f = 1 MHz 207 152 38 32 23 1 pF pF pF pF pF Value Unit Table 1. Symbol Cd 2. Pinning information Table 2. Pin 1 2 Discrete pinning Description cathode anode [1] Simplified outline Symbol 1 2 sym035 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Package Name PESDxS1UB SC -79 Description plastic surface mounted package; 2 leads Version SOD523 Type number 4. Marking Table 4. Marking Marking code N1 N2 N3 N4 N5 Type number PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 August 2009 2 of 15 NXP Semiconductors PESDxS1UB series ESD protection diodes in SOD523 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB IPP peak pulse current PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB Tj Tamb Tstg [1] Conditions 8/20 µs [1] Min - Max 330 260 180 160 160 18 15 5 5 3 150 +150 +150 Unit W W W W W A A A A A °C °C °C 8/20 µs [1] −65 −65 junction temperature operating ambient temperature storage temperature Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure 1. Table 6. Symbol ESD ESD maximum ratings Parameter electrostatic discharge capability PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB PESDxS1UB series HBM MIL-STD883 Conditions IEC 61000-4-2 (contact discharge) [1] Min Max Unit - 30 30 30 30 23 10 kV kV kV kV kV kV [1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2. Table 7. Standard ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV IEC 61000-4-2, level 4 (ESD) HBM MIL-STD883, class 3 PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 August 2009 3 of 15 NXP Semiconductors PESDxS1UB series ESD protection diodes in SOD523 package 001aaa631 120 IPP (%) 80 100 % IPP; 8 µs 001aaa630 IPP 100 % 90 % e−t 50 % IPP; 20 µs 40 10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (µs) 40 30 ns 60 ns t 0 Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2 PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 August 2009 4 of 15 NXP Semiconductors PESDxS1UB series ESD protection diodes in SOD523 package 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol VRWM Parameter reverse standoff voltage PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB IRM reverse leakage current PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB VBR breakdown voltage PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB Cd diode capacitance PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB V(CL)R clamping voltage PESD3V3S1UB PESD5V0S1UB PESD12VS1UB PESD15VS1UB PESD24VS1UB IPP = 1 A IPP = 18 A IPP = 1 A IPP = 15 A IPP = 1 A IPP = 5A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 3 A [1] Conditions Min - Typ 0.7 0.1