PESD3V3S2UQ

PESDxS2UQ series Double ESD protection diodes in SOT663 package Rev. 03 — 11 September 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package FEATURES • Uni-directional ESD protection of up to two lines • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A • Low reverse leakage current: IRM < 1 nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. APPLICATIONS • Computers and peripherals • Communication systems • Audio and video equipment • High speed data lines • Parallel ports. DESCRIPTION Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING TYPE NUMBER PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ MARKING CODE E1 E2 E3 E4 E5 1 PESDxS2UQ series QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1 2 3 cathode 1 cathode 2 common anode DESCRIPTION VALUE 3.3, 5, 12, 15 and 24 UNIT V 200, 150, 38, 32 pF and 23 2 3 1 3 2 2 001aaa732 sym022 Fig.1 Simplified outline (SOT663) and symbol. Rev. 03 - 11 September 2008 2 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp Ipp PARAMETER peak pulse power peak pulse current PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Tj Tamb Tstg Notes 1. Non-repetitive current pulse 8/20 µs exponential decaying waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. junction temperature operating ambient temperature storage temperature CONDITIONS 8/20 µs pulse; notes 1 and 2 8/20 µs pulse; notes 1 and 2 − DESCRIPTION plastic surface mounted package; 3 leads PESDxS2UQ series VERSION SOT663 MIN. − − − − − − − −65 −65 MAX. 150 15 15 5 5 3 150 +150 +150 UNIT W A A A A A °C °C °C Rev. 03 - 11 September 2008 3 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package ESD maximum ratings SYMBOL ESD PARAMETER electrostatic discharge capability CONDITIONS PESDxS2UQ series VALUE UNIT IEC 61000-4-2 (contact discharge); notes 1 and 2 PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ HBM MIL-Std 883 PESDxS2UQ series 10 kV 30 30 30 30 23 kV kV kV kV kV Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. ESD standards compliance ESD STANDARD IEC 61000-4-2; level 4 (ESD); see Fig.3 HBM MIL-Std 883; class 3 >4 kV CONDITIONS >15 kV (air); > 8 kV (contact) 001aaa191 handbook, halfpage 120 MLE218 Ipp 100 % 90 % Ipp (%) 100 % Ipp; 8 µs 80 e−t 50 % Ipp; 20 µs 40 10 % 0 0 10 20 30 t (µs) 40 tr = 0.7 to 1 ns 30 ns 60 ns t Fig.2 8/20 µs pulse waveform according to IEC 61000-4-5. Fig.3 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2. Rev. 03 - 11 September 2008 4 of 13 NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VRWM PARAMETER reverse stand-off voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ IRM reverse leakage current PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ VBR breakdown voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Cd diode capacitance PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ V(CL)R clamping voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ notes 1 and 2 Ipp = 1 A Ipp = 15 A Ipp = 1 A Ipp = 15 A Ipp = 1 A Ipp = 5 A Ipp = 1 A Ipp = 5 A Ipp = 1 A Ipp = 3 A − − − − − − − − − − f = 1 MHz; VR = 0 V − − − − − VRWM = 3.3 V VRWM = 5 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IZ = 5 mA 5.2 6.4 14.7 17.6 26.5 − − − − − − − − − − CONDITIONS PESDxS2UQ series MIN. − − − − − TYP. MAX. 3.3 5 12 15 24 3 300 30 50 50 6.0 7.2 15.3 18.4 27.5 275 215 100 70 50 8 20 9 20 19 35 23 40 36 70 UNIT V V V V V µA nA nA nA nA V V V V V pF pF pF pF pF V V V V V V V V V V 0.55 50