PH4830L,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PH4830L N-channel TrenchMOS logic level FET Rev. 01 — 6 September 2007 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features n Logic level threshold n Optimized for use in DC-to-DC converters n 100 % RG tested n Lead-free package n Very low switching and conduction losses n 100 % ruggedness tested 1.3 Applications n DC-to-DC converters n Voltage regulators n Switched-mode power supplies n PC Motherboards 1.4 Quick reference data n VDS ≤ 30 V n RDSon ≤ 4.8 mΩ n ID ≤ 84 A n QGD = 5.4 nC (typ) 2. Pinning information Table 1. Pin Pinning Description 1, 2, 3 source (S) 4 gate (G) mb mounting base; connected to drain (D) Simplified outline Symbol D mb G mbb076 1 2 3 4 SOT669 (LFPAK) S PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Type number PH4830L Package Name Description Version LFPAK plastic single-ended surface-mounted package (lfpak); 4 leads SOT669 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 30 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage - ±20 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 - 84 A Tmb = 100 °C; VGS = 10 V; see Figure 2 - 63 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 240 A Ptot total power dissipation Tmb = 25 °C; see Figure 1 - 62.5 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source current Tmb = 25 °C - 52 A ISM peak source current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 208 A unclamped inductive load; ID = 49 A; tp = 0.12 ms; VDS ≤ 25 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C - 121 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy PH4830L_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 2 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 003aab937 120 Pder (%) 003aab555 120 Ider (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 Tmb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) ID I der = -------------------- × 100 % I D ( 25°C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature 003aab773 103 ID (A) 200 Tj (°C) Limit RDSon = VDS / ID tp = 100 µs 102 100 µs 1 ms 10 ms 10 DC 100 ms 1 10−1 10−1 1 102 10 VDS (V) Tmb = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PH4830L_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 3 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to mounting base see Figure 4 Rth(j-mb) Min Typ Max Unit - - 2 K/W 003aab772 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10−1 0.05 δ= P 0.02 tp T single pulse t tp 10−2 10−5 T 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PH4830L_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 4 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 30 - - V Tj = −55 °C 27 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C 1.3 1.7 2.15 V Tj = 150 °C 0.8 - - V Tj = −55 °C - - 2.6 V VDS = 30 V; VGS = 0 V Tj = 25 °C - - 1.0 µA Tj = 150 °C - - 100 µA IGSS gate leakage current VGS = ±20 V; VDS = 0 V - - 100 nA RG gate resistance f = 1 MHz - 0.51 - Ω RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 6 and 8 Tj = 25 °C - 3.8 4.8 mΩ Tj = 150 °C - 6.3 7.7 mΩ VGS = 4.5 V; ID = 25 A; see Figure 6 and 8 - 5.6 7.0 mΩ ID = 25 A; VDS = 12 V; VGS = 4.5 V; see Figure 11 and 12 - 22.9 - nC - 9.0 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS1 pre-VGS(th) gate-source charge - 5.5 - nC QGS2 post-VGS(th) gate-source charge - 3.5 - nC QGD gate-drain charge - 5.4 - nC VGS(pl) gate-source plateau voltage - 2.8 - V Ciss input capacitance - 2786 - pF Coss output capacitance - 579 - pF Crss reverse transfer capacitance - 297 - pF Ciss input capacitance VGS = 0 V; VDS = 0 V; f = 1 MHz - 3300 - pF td(on) turn-on delay time VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V; RG = 5.6 Ω - 28 - ns VGS = 0 V; VDS = 12 V; f = 1 MHz; see Figure 14 tr rise time - 43 - ns td(off) turn-off delay time - 35 - ns tf fall time - 19 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; see Figure 13 - 0.85 - V trr reverse recovery time - 47 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; VR = 30 V - 17 - nC PH4830L_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 5 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 003aab714 100 VGS (V) = 10 5 ID (A) 003aab715 20 4.5 3.8 80 VGS (V) = 2.8 RDSon (mΩ) 3 3.2 3.4 15 3.4 60 10 3.2 3.8 40 4.5 3 5 10 20 0 0 0 0.2 0.4 0.6 0 0.8 1 VDS (V) 25 50 75 100 ID (A) Tj = 25 °C Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 003aab716 80 003aab467 2 a ID (A) 1.6 60 1.2 40 0.8 Tj = 150 °C 25 °C 20 0.4 0 0 1 2 3 4 VGS (V) Tj = 25 °C and 150 °C; VDS > ID × RDSon 0 −60 60 120 180 Tj (°C) R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature PH4830L_1 Product data sheet 0 © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 6 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 003aab272 3 003aab938 10−1 ID (A) VGS(th) (V) 10−2 max 2 10−3 typ min 1.5 typ max min 10−4 1 10−5 0.5 10−6 0 -60 0 60 120 180 0 1 2 Tj (°C) 3 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab717 10 VDS = 12 V ID = 20 A Tj = 25 °C VGS (V) 8 VDS ID 6 VGS(pl) 4 VGS(th) VGS 2 QGS1 QGS2 QGS 0 0 12.5 25 37.5 50 QG (nC) QGD QG(tot) 003aaa508 ID = 20 A; VDS = 12 V Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Gate charge waveform definitions PH4830L_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 7 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 003aab718 80 003aab719 104 IS (A) C (pF) 60 Ciss 103 40 Tj = 150 °C 25 °C Coss 20 Crss 0 0 0.3 0.6 0.9 1.2 102 10−1 1 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V VDS (V) VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PH4830L_1 Product data sheet 102 10 © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 8 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 c b3 b4 2.2 2.0 0.9 0.7 D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA MO-235 EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16 Fig 15. Package outline SOT669 (LFPAK) PH4830L_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 9 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes PH4830L_1 20070906 Product data sheet - - PH4830L_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 10 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com PH4830L_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 September 2007 11 of 12 PH4830L NXP Semiconductors N-channel TrenchMOS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 September 2007 Document identifier: PH4830L_1