PHE13005,127

PHE13005 Silicon diffused power transistor Rev.01 - 30 March 2018 Product data sheet 1. General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications 2. Features and benefits • • • Fast switching High voltage capability of 700 V Low thermal resistance 3. Applications • Electronic lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating VCESM peak collector-emitter voltage VBE = 0 V 700 V IC collector current (DC) DC; Fig. 1; Fig. 2; Fig. 4 4 A Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3 75 W Symbol Parameter Conditions Min Typ Max IC = 1 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 12 20 40 IC = 2 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 10 17 28 Static characteristics hFE DC current gain Unit PHE13005 WeEn Semiconductors Silicon diffused power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 B base 2 C collector 3 E emitter mb C mounting base; connected to collector 1 2 3 6. Ordering information Table 3. Ordering information Type number Package PHE13005 PHE13005 Product data sheet Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit VCESM peak collector-emitter voltage VBE = 0 V 700 V VCBO collector-base voltage IE = 0 A 700 V VCEO collector-emitter voltage IB = 0 A 400 V IC collector current DC; Fig. 1; Fig. 2; Fig. 4 4 A ICM peak collector current 8 A IB base current 2 A IBM peak base current 4 A Ptot total power dissipation 75 W Tstg storage temperature -65 to 150 °C Tj junction temperature 150 °C VEBO emitter-base voltage 9 V DC Tmb ≤ 25 °C; Fig. 3 IC = 0 A VCL(CE) ≤ 1000V; VCC = 150 V; VBB = -5 V; LC = 200 μH; LB = 1 μH Tj ≤ Tj (max) °C Fig. 1. Test circuit for reverse bias safe operating area Fig. 2. Reverse bias safe operating area PHE13005 Product data sheet All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor Pder(%) = Ptot Ptot(25°C) ×100% Fig. 3. Normalized total power dissipation as a function of heatsink temperature Th ≤ 25 °C Mounted with heatsink compound and (30 ± 5) N force on the centre of the envelope (1) Ptot maximum and Ptot peak maximum lines (2) Second breakdown limits (3) Region of permissible DC operation (4) Extension of operating region for repetitive pulse operation (5) Extension of operating region during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs Fig. 4. Forward bias safe operating area PHE13005 Product data sheet All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient Conditions Min Typ Max Unit Fig. 5 - - 1.67 K/W in free air - 60 - K/W Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PHE13005 Product data sheet All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor 9. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit collector-emitter cut-off current VBE = -1.5 V; VCE = 700 V; Tmb = 25 °C - - 1 mA VBE = -1.5 V; VCE = 700 V; Tj = 125 °C - - 5 mA ICBO collector-base cut-off current VCB = 700 V; IE = 0 A; Tmb = 25 °C - - 1 mA ICEO collector-emitter cut-off current VCEO = 400 V; IB = 0 A; Tmb = 25 °C - - 0.1 mA IEBO emitter-base cut-off current VEB = 9 V; IC = 0 A; Tmb = 25 °C - - 1 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; LC = 25 mH; Tmb = 25 °C; Fig. 6; Fig. 7 400 - - V VCEsat collector-emitter saturation voltage IC = 1.0 A; IB = 0.2 A; Tmb = 25 °C; Fig. 8; Fig. 9 - 0.1 0.5 V IC = 2.0 A; IB = 0.5 A; Tmb = 25 °C; Fig. 8; Fig. 9 - 0.2 0.6 V IC = 4.0 A; IB = 1.0 A; Tmb = 25 °C; Fig. 8; Fig. 9 - 0.3 1 V base-emitter saturation voltage IC = 1.0 A; IB = 0.2 A; Tmb = 25 °C; Fig. 10 - 0.85 1.2 V IC = 2.0 A; IB = 0.5 A; Tmb = 25 °C; Fig. 10 - 0.92 1.6 V DC current gain IC = 1 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 12 20 40 IC = 2 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 10 17 28 IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 Ω; Tmb = 25 °C; resistive load; Fig. 12; Fig. 13 - 2.7 4 μs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 μH; Tmb = 25 °C; inductive load; Fig. 14; Fig. 15 - 1.2 2 μs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 μH; Tmb = 100 °C; inductive load; Fig. 14; Fig. 15 - 1.4 4 μs IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 Ω; Tmb = 25 °C; resistive load; Fig. 12; Fig. 13 - 0.3 0.9 μs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 μH; Tmb = 25 °C; inductive load; Fig. 14; Fig. 15 - 0.1 0.5 μs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 μH; Tmb = 100 °C; inductive load; Fig. 14; Fig. 15 - 0.16 0.9 μs Static characteristics ICES VBEsat hFE Dynamic characteristics ts tf storage time fall time PHE13005 Product data sheet All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor Fig. 6. Test circuit for collector-emitter sustaining voltage Fig. 7. Oscilloscope display for collector-emitter sustaining voltage test waveform Tj = 25 °C Fig. 8. Collector-emitter saturation voltage; typical values PHE13005 Product data sheet IC / IB = 4 Fig. 9. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor IC / IB = 4 Fig. 10. Base-emitter saturation voltage; typical values Tj = 25 °C Fig. 11. DC current gain as a function of collector current; typical values VIM = - 6 to + 8 V; VCC = 250 V; tp = 20 μs; δ = tp / T = 0.01 RB and RL calculated from ICon and IBon requirements. Fig. 12. Test circuit for resistive load switching PHE13005 Product data sheet Fig. 13. Switching times waveforms for resistive load All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor VCC = 300 V; VBB = - 5 V; LC = 200 μH; LB = 1 μH Fig. 14. Test circuit for inductive load switching PHE13005 Product data sheet Fig. 15. Switching times waveforms for inductive load All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 c b(3×) e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 PHE13005 Product data sheet REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. 30 March 2018 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Product [short] data sheet Production This document contains the product specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. [1 ] [2] [3] Definition Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. PHE13005 Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PHE13005 Product data sheet All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 13 PHE13005 WeEn Semiconductors Silicon diffused power transistor 12. Contents 1. General description........................................................1 2. Features and benefits....................................................1 3. Applications....................................................................1 4. Quick reference data......................................................1 5. Pinning information........................................................2 6. Ordering information......................................................2 7. Limiting values...............................................................3 8. Thermal characteristics.................................................5 9. Characteristics...............................................................6 10. Package outline..........................................................10 11. Legal information....................................................... 11 12. Contents......................................................................13 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 30 March 2018 PHE13005 Product data sheet All information provided in this document is subject to legal disclaimers. 30 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 13