PMBFJ174; PMBFJ175;
PMBFJ176; PMBFJ177
P-channel silicon field-effect transistors
Rev. 3.0 — 24 January 2020
1
Product data sheet
Product profile
1.1 General description
Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23
envelopes.They are intended for application with analogue switches, choppers,
commutators etc. using SMD technology. A special feature is the interchangeability of the
drain and source connections.
1.2 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
30
-
30
V
VGSo
gate-source voltage
-
-
30
V
-IG
gate current
-
-
50
mA
Ptot
total power
dissipation
up to Tamb = 25 ° C
-
-
300
mW
-IDSS
drain current
-VDS = 15 V; VGS = 0
PMBFJ174
20
-
135
mA
PMBFJ175
7
-
70
mA
PMBFJ176
2
-
35
mA
PMBFJ177
1.5
-
20
mA
PMBFJ174
-
-
85
Ω
PMBFJ175
-
-
125
Ω
PMBFJ176
-
-
250
Ω
PMBFJ177
-
-
300
Ω
RDS on
drain-source ONresistance
-VDS = 0.1 V; VGS = 0
NXP Semiconductors
PMBFJ174; PMBFJ175; PMBFJ176;
PMBFJ177
P-channel silicon field-effect transistors
2
Pinning information
Table 2. Pinning
Pin
Description
1
drain
2
source
3
gate
[1]
Simplified outline
3
3
3
1
2
sym053
1
[1]
Symbol
2
Drain and source are interchangeable.
Ordering information
Table 3. Ordering information
Type number
PMBFJ174
Package
Name
Description
Version
-
plastic surface mounted package; 3 leads
SOT23
PMBFJ175
PMBFJ176
PMBFJ177
4
Marking
Table 4. Marking
Marking code
PMBFJ174
*6X
PMBFJ175
*6W
PMBFJ176
*6S
PMBFJ177
*6Y
[1]
5
[1]
Type number
* = manufacturing site
Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMBFJ174_175_176_177
Product data sheet
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
30
30
V
VGSO
gate-source voltage
-
30
V
VGDO
gate-drain voltage
-
30
V
All information provided in this document is subject to legal disclaimers.
Rev. 3.0 — 24 January 2020
© NXP B.V. 2020. All rights reserved.
2 / 10
NXP Semiconductors
PMBFJ174; PMBFJ175; PMBFJ176;
PMBFJ177
P-channel silicon field-effect transistors
Symbol
Parameter
-IG
gate current (DC)
Tamb = 25 ° C
[1]
Min
Max
Unit
-
50
mA
-
300
mW
Ptot
total power dissipation
Tstg
storage temperature range
-65
150
°C
Tj
junction temperature
-
150
°C
[1]
6
Conditions
Mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
Thermal characteristics
Table 6. Thermal characteristics
Tj = P (Rth(j-t) + Rth(t-s) + Rth(s-a)) + Tamb.
7
Symbol
Parameter
Conditions
Rth(j-a)
junction to ambient in free air thermal
resistance
Typ
Unit
430
K/W
Static characteristics
Table 7. Static characteristics
Tj = 25 ° C unless otherwise specified.
Symbol
Parameter
IGSS
gate cut-off current
-IDSX
-IDSS
V(BR)GSS
Conditions
Min
Typ
Max
Unit
PMBFJ174
VGS = 20 V; VDS = 0 V
-
-
1
nA
PMBFJ175
VGS = 20 V; VDS = 0 V
-
-
1
nA
PMBFJ176
VGS = 20 V; VDS = 0 V
-
-
1
nA
PMBFJ177
VGS = 20 V; VDS = 0 V
-
-
1
nA
PMBFJ174
-VDS = 15 V; VGS = 10 V
-
-
1
nA
PMBFJ175
-VDS = 15 V; VGS = 10 V
-
-
1
nA
PMBFJ176
-VDS = 15 V; VGS = 10 V
-
-
1
nA
PMBFJ177
-VDS = 15 V; VGS = 10 V
-
-
1
nA
PMBFJ174
VDS = -15 V; VGS = 0 V
20
-
135
mA
PMBFJ175
-VDS = 15 V; VGS = 0 V
7
-
70
mA
PMBFJ176
-VDS = 15 V; VGS = 0 V
2
-
35
mA
PMBFJ177
-VDS = 15 V; VGS = 0 V
1.5
-
20
mA
PMBFJ174
IG = 1 μA; VDS = 0 V
-
-
30
V
PMBFJ175
IG = 1 μA; VDS = 0 V
-
-
30
V
PMBFJ176
IG = 1 μA; VDS = 0 V
-
-
30
V
PMBFJ177
IG = 1 μA; VDS = 0 V
-
-
30
V
drain cut-off current
drain current
gate-source breakdown voltage
PMBFJ174_175_176_177
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3.0 — 24 January 2020
© NXP B.V. 2020. All rights reserved.
3 / 10
NXP Semiconductors
PMBFJ174; PMBFJ175; PMBFJ176;
PMBFJ177
P-channel silicon field-effect transistors
Symbol
Parameter
VGSoff
gate-source cut-off voltage
RDSon
8
Conditions
Min
Typ
Max
Unit
PMBFJ174
-ID = 10 nA; VDS = -15 V
5
-
10
V
PMBFJ175
-ID = 10 nA; VDS = -15 V
3
-
6
V
PMBFJ176
-ID = 10 nA; VDS = -15 V
1
-
4
V
PMBFJ177
-ID = 10 nA; VDS = -15 V
0.8
-
2.25
V
PMBFJ174
-VDS = 0.1 V; VGS = 0 V
-
-
85
Ω
PMBFJ175
-VDS = 0.1 V; VGS = 0 V
-
-
125
Ω
PMBFJ176
-VDS = 0.1 V; VGS = 0 V
-
-
250
Ω
PMBFJ177
-VDS = 0.1 V; VGS = 0 V
-
-
300
Ω
drain-source on resistance
Dynamic characteristics
Table 8. Dynamic characteristics
Tj = 25 ° C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ciss
input capacitance
VGS = 10 V; VDS = 0 V; f = 1 MHz
-
8
-
pF
VDS = 0 V; VGS = 0 V; f = 1 MHz
-
30
-
pF
VGS = 10 V; VDS = 0 V; f = 1 MHz
-
4
-
pF
Crs
feedback capacitance
Switching times; see Figure 1and Figure 2, Test conditions for switching times are as follows:
td
tr
ton
[1]
delay time
PMBFJ174
-
2
-
ns
PMBFJ175
-
5
-
ns
PMBFJ176
-
15
-
ns
PMBFJ177
-
20
-
ns
PMBFJ174
-
5
-
ns
PMBFJ175
-
10
-
ns
PMBFJ176
-
20
-
ns
PMBFJ177
-
25
-
ns
PMBFJ174
-
7
-
ns
PMBFJ175
-
15
-
ns
PMBFJ176
-
35
-
ns
PMBFJ177
-
45
-
ns
rise time
turn-on time
PMBFJ174_175_176_177
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3.0 — 24 January 2020
© NXP B.V. 2020. All rights reserved.
4 / 10
NXP Semiconductors
PMBFJ174; PMBFJ175; PMBFJ176;
PMBFJ177
P-channel silicon field-effect transistors
Symbol
Parameter
ts
storage temperature
tf
toff
[1]
Conditions
Min
Typ
Max
Unit
PMBFJ174
-
5
-
ns
PMBFJ175
-
10
-
ns
PMBFJ176
-
15
-
ns
PMBFJ177
-
20
-
ns
PMBFJ174
-
10
-
ns
PMBFJ175
-
20
-
ns
PMBFJ176
-
20
-
ns
PMBFJ177
-
25
-
ns
PMBFJ174
-
6
-
ns
PMBFJ175
-
6
-
ns
PMBFJ176
-
6
-
ns
PMBFJ177
-
6
-
ns
fall time
turn-off time
-VDD = 10 V, VGSoff = 12 V, RL = 560 Ω, VGSon = 0 V (PMBFJ174);
-VDD = 6 V, VGSoff = 8 V, RL = 1200 Ω, VGSon = 0 V (PMBFJ175);
-VDD = 6 V, VGSoff = 6 V, RL = 2000 Ω, VGSon = 0 V (PMBFJ176);
-VDD = 6 V, VGSoff = 3 V, RL = 2900 Ω, VGSon = 0 V (PMBFJ177);
VGSoff
90%
-VDD
INPUT
10%
50 Ω
Vout
RL
90%
90%
tf
ts
50 Ω
aaa-036530
Figure 1. Switching times test circuit.
Product data sheet
10%
OUTPUT
DUT
Vin
PMBFJ174_175_176_177
10%
tr
td
MBK293
Rise time input voltage
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