PMBFJ175,215

PMBFJ174; PMBFJ175; PMBFJ176; PMBFJ177 P-channel silicon field-effect transistors Rev. 3.0 — 24 January 2020 1 Product data sheet Product profile 1.1 General description Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. 1.2 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 30 - 30 V VGSo gate-source voltage - - 30 V -IG gate current - - 50 mA Ptot total power dissipation up to Tamb = 25 ° C - - 300 mW -IDSS drain current -VDS = 15 V; VGS = 0 PMBFJ174 20 - 135 mA PMBFJ175 7 - 70 mA PMBFJ176 2 - 35 mA PMBFJ177 1.5 - 20 mA PMBFJ174 - - 85 Ω PMBFJ175 - - 125 Ω PMBFJ176 - - 250 Ω PMBFJ177 - - 300 Ω RDS on drain-source ONresistance -VDS = 0.1 V; VGS = 0 NXP Semiconductors PMBFJ174; PMBFJ175; PMBFJ176; PMBFJ177 P-channel silicon field-effect transistors 2 Pinning information Table 2. Pinning Pin Description 1 drain 2 source 3 gate [1] Simplified outline 3 3 3 1 2 sym053 1 [1] Symbol 2 Drain and source are interchangeable. Ordering information Table 3. Ordering information Type number PMBFJ174 Package Name Description Version - plastic surface mounted package; 3 leads SOT23 PMBFJ175 PMBFJ176 PMBFJ177 4 Marking Table 4. Marking Marking code PMBFJ174 *6X PMBFJ175 *6W PMBFJ176 *6S PMBFJ177 *6Y [1] 5 [1] Type number * = manufacturing site Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). PMBFJ174_175_176_177 Product data sheet Symbol Parameter VDS Conditions Min Max Unit drain-source voltage 30 30 V VGSO gate-source voltage - 30 V VGDO gate-drain voltage - 30 V All information provided in this document is subject to legal disclaimers. Rev. 3.0 — 24 January 2020 © NXP B.V. 2020. All rights reserved. 2 / 10 NXP Semiconductors PMBFJ174; PMBFJ175; PMBFJ176; PMBFJ177 P-channel silicon field-effect transistors Symbol Parameter -IG gate current (DC) Tamb = 25 ° C [1] Min Max Unit - 50 mA - 300 mW Ptot total power dissipation Tstg storage temperature range -65 150 °C Tj junction temperature - 150 °C [1] 6 Conditions Mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. Thermal characteristics Table 6. Thermal characteristics Tj = P (Rth(j-t) + Rth(t-s) + Rth(s-a)) + Tamb. 7 Symbol Parameter Conditions Rth(j-a) junction to ambient in free air thermal resistance Typ Unit 430 K/W Static characteristics Table 7. Static characteristics Tj = 25 ° C unless otherwise specified. Symbol Parameter IGSS gate cut-off current -IDSX -IDSS V(BR)GSS Conditions Min Typ Max Unit PMBFJ174 VGS = 20 V; VDS = 0 V - - 1 nA PMBFJ175 VGS = 20 V; VDS = 0 V - - 1 nA PMBFJ176 VGS = 20 V; VDS = 0 V - - 1 nA PMBFJ177 VGS = 20 V; VDS = 0 V - - 1 nA PMBFJ174 -VDS = 15 V; VGS = 10 V - - 1 nA PMBFJ175 -VDS = 15 V; VGS = 10 V - - 1 nA PMBFJ176 -VDS = 15 V; VGS = 10 V - - 1 nA PMBFJ177 -VDS = 15 V; VGS = 10 V - - 1 nA PMBFJ174 VDS = -15 V; VGS = 0 V 20 - 135 mA PMBFJ175 -VDS = 15 V; VGS = 0 V 7 - 70 mA PMBFJ176 -VDS = 15 V; VGS = 0 V 2 - 35 mA PMBFJ177 -VDS = 15 V; VGS = 0 V 1.5 - 20 mA PMBFJ174 IG = 1 μA; VDS = 0 V - - 30 V PMBFJ175 IG = 1 μA; VDS = 0 V - - 30 V PMBFJ176 IG = 1 μA; VDS = 0 V - - 30 V PMBFJ177 IG = 1 μA; VDS = 0 V - - 30 V drain cut-off current drain current gate-source breakdown voltage PMBFJ174_175_176_177 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.0 — 24 January 2020 © NXP B.V. 2020. All rights reserved. 3 / 10 NXP Semiconductors PMBFJ174; PMBFJ175; PMBFJ176; PMBFJ177 P-channel silicon field-effect transistors Symbol Parameter VGSoff gate-source cut-off voltage RDSon 8 Conditions Min Typ Max Unit PMBFJ174 -ID = 10 nA; VDS = -15 V 5 - 10 V PMBFJ175 -ID = 10 nA; VDS = -15 V 3 - 6 V PMBFJ176 -ID = 10 nA; VDS = -15 V 1 - 4 V PMBFJ177 -ID = 10 nA; VDS = -15 V 0.8 - 2.25 V PMBFJ174 -VDS = 0.1 V; VGS = 0 V - - 85 Ω PMBFJ175 -VDS = 0.1 V; VGS = 0 V - - 125 Ω PMBFJ176 -VDS = 0.1 V; VGS = 0 V - - 250 Ω PMBFJ177 -VDS = 0.1 V; VGS = 0 V - - 300 Ω drain-source on resistance Dynamic characteristics Table 8. Dynamic characteristics Tj = 25 ° C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VGS = 10 V; VDS = 0 V; f = 1 MHz - 8 - pF VDS = 0 V; VGS = 0 V; f = 1 MHz - 30 - pF VGS = 10 V; VDS = 0 V; f = 1 MHz - 4 - pF Crs feedback capacitance Switching times; see Figure 1and Figure 2, Test conditions for switching times are as follows: td tr ton [1] delay time PMBFJ174 - 2 - ns PMBFJ175 - 5 - ns PMBFJ176 - 15 - ns PMBFJ177 - 20 - ns PMBFJ174 - 5 - ns PMBFJ175 - 10 - ns PMBFJ176 - 20 - ns PMBFJ177 - 25 - ns PMBFJ174 - 7 - ns PMBFJ175 - 15 - ns PMBFJ176 - 35 - ns PMBFJ177 - 45 - ns rise time turn-on time PMBFJ174_175_176_177 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3.0 — 24 January 2020 © NXP B.V. 2020. All rights reserved. 4 / 10 NXP Semiconductors PMBFJ174; PMBFJ175; PMBFJ176; PMBFJ177 P-channel silicon field-effect transistors Symbol Parameter ts storage temperature tf toff [1] Conditions Min Typ Max Unit PMBFJ174 - 5 - ns PMBFJ175 - 10 - ns PMBFJ176 - 15 - ns PMBFJ177 - 20 - ns PMBFJ174 - 10 - ns PMBFJ175 - 20 - ns PMBFJ176 - 20 - ns PMBFJ177 - 25 - ns PMBFJ174 - 6 - ns PMBFJ175 - 6 - ns PMBFJ176 - 6 - ns PMBFJ177 - 6 - ns fall time turn-off time -VDD = 10 V, VGSoff = 12 V, RL = 560 Ω, VGSon = 0 V (PMBFJ174); -VDD = 6 V, VGSoff = 8 V, RL = 1200 Ω, VGSon = 0 V (PMBFJ175); -VDD = 6 V, VGSoff = 6 V, RL = 2000 Ω, VGSon = 0 V (PMBFJ176); -VDD = 6 V, VGSoff = 3 V, RL = 2900 Ω, VGSon = 0 V (PMBFJ177); VGSoff 90% -VDD INPUT 10% 50 Ω Vout RL 90% 90% tf ts 50 Ω aaa-036530 Figure 1. Switching times test circuit. Product data sheet 10% OUTPUT DUT Vin PMBFJ174_175_176_177 10% tr td MBK293 Rise time input voltage