PMD9050D,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMD9050D MOSFET driver Rev. 01 — 27 November 2006 Product data sheet 1. Product profile 1.1 General description NPN transistor and high-speed switching diode supplemented by an NPN/PNP transistor pair connected as a silicon-controlled switch in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features n n n n n n General-purpose transistor and high-speed switching diode as driver Silicon-controlled switch to bypass the driver transistor Application-optimized pinout Internal connections to minimize layout effort Space-saving solution Reduces component count 1.3 Applications n MOSFET driver with silicon-controlled switch 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit - - 45 V - - 0.1 A - - 0.2 A - - 0.2 A - - 1.1 V - - 60 V Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage IC collector current ICM peak collector current open base single pulse; tp ≤ 1 ms Diode (D1) IF forward current VF forward voltage VR reverse voltage [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. IF = 200 mA [1] PMD9050D NXP Semiconductors MOSFET driver 2. Pinning information Table 2. Pinning Pin Symbol Description 1 IN input 2 OUT output 3 RC collector resistor 4 GND ground 5 ON output enable 6 OFF output disable Simplified outline 6 5 4 Symbol 6 5 4 TR3 1 2 TR2 3 TR1 D1 1 2 3 006aaa654 3. Ordering information Table 3. Ordering information Type number PMD9050D Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMD9050D 9G PMD9050D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 2 of 13 PMD9050D NXP Semiconductors MOSFET driver 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5 V IC collector current - 0.1 A ICM peak collector current - 0.2 A IB base current - 0.1 A IBM peak base current - 0.2 A single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Diode (D1) VRRM repetitive peak reverse voltage - 60 V VR reverse voltage - 60 V IF forward current - 0.2 A IFRM repetitive peak forward current tp ≤ 1 ms; δ = 0.25 - 0.6 A IFSM non-repetitive peak forward current square wave tp ≤ 1 µs - 9 A tp ≤ 100 µs - 3 A tp ≤ 10 ms - 1.7 A [1] - 290 mW [2] - 400 mW Device total power dissipation Ptot Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramic PCB, Al2O3, standard footprint. PMD9050D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 3 of 13 PMD9050D NXP Semiconductors MOSFET driver 006aaa909 500 Ptot (mW) 400 300 (1) (2) 200 100 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 430 K/W [2] - - 312 K/W Device Rth(j-a) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramic PCB, Al2O3, standard footprint. PMD9050D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 4 of 13 PMD9050D NXP Semiconductors MOSFET driver 006aaa910 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa911 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMD9050D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 5 of 13 PMD9050D NXP Semiconductors MOSFET driver 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VCB = 30 V; IE = 0 A - - 50 nA VCB = 30 V; IE = 0 A; Tj = 150 °C - - 10 µA VEB = 5 V; IC = 0 A - - 100 nA 200 320 450 VCE = 5 V; IC = 100 mA 95 165 - VCE = 5 V; IC = 200 mA 24 40 - Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current IEBO emitter-base cut-off current hFE DC current gain TR1 and TR3 (NPN) VCE = 5 V; IC = 1 mA TR2 (PNP) VCEsat VBEsat VBE collector-emitter saturation voltage VCE = 5 V; IC = 1 mA 200 270 450 VCE = 5 V; IC = 100 mA 95 120 - VCE = 5 V; IC = 200 mA 24 45 - IC = 10 mA; IB = 0.5 mA - 70 200 mV IC = 100 mA; IB = 5 mA - 200 400 mV IC = 200 mA; IB = 20 mA - 350 500 mV base-emitter saturation IC = 10 mA; IB = 0.5 mA voltage IC = 100 mA; IB = 5 mA - 0.74 - V - 0.91 - V base-emitter voltage IC = 200 mA; IB = 20 mA - 1 1.2 V VCE = 5 V; IC = 2 mA - 660 - mV - - 1.1 V Diode (D1) [1] VF forward voltage IF = 200 mA IR reverse current VR = 60 V - - 100 nA VR = 60 V; Tj = 150 °C - - 100 µA reverse recovery time [2] - - 6 ns forward recovery voltage [3] - - 2 V - 12 - ns - 78 - ns trr VFR Transistor 1 (TR1) td delay time IC = 0.05 A; IBon = 2.5 mA; IBoff = −2.5 mA tr rise time ton turn-on time - 90 - ns ts storage time - 853 - ns tf fall time - 205 - ns toff turn-off time - 1058 - ns [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA. [3] When switched from IF = 400 mA; tr = 30 ns. PMD9050D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 6 of 13 PMD9050D NXP Semiconductors MOSFET driver 006aaa912 500 hFE 0.20 IC (A) (1) 006aaa913 IB (mA) = 5.0 4.5 4.0 0.16 400 (2) 0.12 300 200 0.08 (3) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.04 100 0 10−1 1 102 10 103 0 0 1 2 3 4 IC (mA) 5 VCE (V) Tamb = 25 °C VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values 006aaa914 1.1 VBE (V) Fig 5. TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values 006aaa915 1.2 VBEsat (V) 0.9 1.0 (1) (1) 0.7 0.8 (2) (2) 0.5 0.6 (3) (3) 0.3 10−2 10−1 1 10 102 103 IC (mA) 0.4 10−1 1 VCE = 5 V IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C 103 Fig 7. TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values PMD9050D_1 Product data sheet 102 IC (mA) (1) Tamb = −55 °C Fig 6. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values 10 © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 7 of 13 PMD9050D NXP Semiconductors MOSFET driver 006aaa916 1 006aaa917 1 VCEsat (V) VCEsat (V) (1) (2) (3) 10−1 (1) 10−1 (2) (3) 10−2 10−1 1 10 102 10−2 10−1 103 1 102 10 IC (mA) 103 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 8. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values Fig 9. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information RC D1 VBB oscilloscope VCC DUT VO (probe) (probe) 4.5 kΩ 1.5 kΩ RB oscilloscope R4 R2 VI TR1 TR2 R1 TR3 R3 006aaa918 IC = 0.05 A; IBon = 2.5 mA; IBoff = −2.5 mA; R1 = 50 Ω; R2 = 1 kΩ; R3 = 1 kΩ; R4 = 1 kΩ; RB = 1.5 kΩ; RC = 150 Ω Fig 10. Test circuit for switching times per TR1 PMD9050D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 8 of 13 PMD9050D NXP Semiconductors MOSFET driver 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 11. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMD9050D Package SOT457 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping PMD9050D_1 Product data sheet Packing quantity © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 9 of 13 PMD9050D NXP Semiconductors MOSFET driver 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 12. Reflow soldering footprint 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 13. Wave soldering footprint PMD9050D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 10 of 13 PMD9050D NXP Semiconductors MOSFET driver 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMD9050D_1 20061127 Product data sheet - - PMD9050D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 11 of 13 PMD9050D NXP Semiconductors MOSFET driver 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com PMD9050D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 27 November 2006 12 of 13 PMD9050D NXP Semiconductors MOSFET driver 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 November 2006 Document identifier: PMD9050D_1