PMEM4030NS,115

PMEM4030NS NPN transistor/Schottky rectifier module Rev. 02 — 8 July 2005 Product data sheet 1. Product profile 1.1 General description Combination of a NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1 (SO8/MS-012) small plastic package. PNP complement: PMEM4030PS. 1.2 Features ■ ■ ■ ■ ■ ■ 1 W total power dissipation High current capability up to 2 A Reduces Printed-Circuit Board (PCB) area required Reduces pick and place costs Small plastic Surface Mounted Device (SMD) package Transistor ◆ Low collector-emitter saturation voltage ■ Diode ◆ High-speed switching ◆ Low forward voltage ◆ Guard ring protected 1.3 Applications ■ DC-to-DC converters ■ Inductive load drivers ■ General-purpose load drivers 1.4 Quick reference data Table 1: Symbol Quick reference data Parameter Conditions Min Typ Max Unit NPN transistor VCEO collector-emitter voltage open base - - 50 V IC collector current (DC) continuous - - 2 A Schottky barrier rectifier VR reverse voltage - - 40 V IF forward current - - 1 A PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module 2. Pinning information Table 2: Pinning Pin Description 1 base 2 emitter 3 not connected 4 anode 5 cathode 6 cathode 7 collector 8 collector Simplified outline 8 5 1 4 Symbol 006aaa405 3. Ordering information Table 3: Ordering information Type number PMEM4030NS Package Name Description Version SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4. Marking Table 4: Marking codes Type number Marking code PMEM4030NS P4030NS PMEM4030NS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 2 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit NPN transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) continuous - 2 A ICRM repetitive peak collector current tp ≤ 100 ms; δ ≤ 0.25 - 3 A ICM peak collector current - 5 A IB base current (DC) continuous - 0.5 A total power dissipation Tamb ≤ 25 °C Ptot [1] - 550 mW [2] - 1 W Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Schottky barrier rectifier VR reverse voltage - 40 V IF forward current - 1 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 3.5 A IFSM non-repetitive peak forward current t = 8.3 µs; half sine wave; JEDEC method - 10 A IRSM non-repetitive peak reverse current tp ≤ 100 µs - 0.5 A Tj junction temperature - 125 °C Tamb ambient temperature −65 +125 °C −65 +150 °C Combined device Tstg storage temperature [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. PMEM4030NS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 3 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 225 K/W [2] - - 125 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 006aaa243 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint. Fig 1. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PMEM4030NS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 4 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit NPN transistor collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA VCB = 50 V; IE = 0 A; Tj = 150 °C - - 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 2 V; IC = 100 mA 200 - - ICBO VCE = 2 V; IC = 500 mA VCEsat collector-emitter saturation voltage 200 - - VCE = 2 V; IC = 1 A [1] 200 - 450 VCE = 2 V; IC = 2 A [1] 130 - - VCE = 2 V; IC = 3 A [1] 80 - - - - 80 mV IC = 500 mA; IB = 50 mA IC = 1 A; IB = 50 mA - - 160 mV IC = 2 A; IB = 100 mA [1] - - 280 mV IC = 2 A; IB = 200 mA [1] - - 260 mV IC = 3 A; IB = 300 mA [1] - - 370 mV - 100 130 mΩ RCEsat collector-emitter saturation resistance IC = 2 A; IB = 200 mA [1] VBEsat base-emitter saturation IC = 2 A; IB = 100 mA voltage IC = 3 A; IB = 300 mA [1] - - 1.1 V [1] - - 1.2 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 1 A [1] 1.1 - - V fT transition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 25 pF Schottky barrier rectifier VF IR Cd [1] forward voltage reverse current diode capacitance IF = 100 mA [1] - 280 330 mV IF = 1 A [1] - 460 500 mV VR = 10 V [1] - 15 40 µA VR = 40 V [1] - 60 300 µA - 65 80 pF VR = 4 V; f = 1 MHz; Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PMEM4030NS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 5 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module mbl887 104 10 mlc389 4 (1) IR (µA) IF (mA) 103 (2) 10 3 (3) (1) (2) 102 10 (3) 2 (4) (4) 10 10 1 1 0 200 400 600 0 800 1000 VF (mV) Schottky barrier rectifier 10 20 30 VR (V) 40 Schottky barrier rectifier (1) Tamb = 125 °C (1) Tamb = 125 °C (2) Tamb = 100 °C (2) Tamb = 100 °C (3) Tamb = 75 °C (3) Tamb = 75 °C (4) Tamb = 25 °C (4) Tamb = 25 °C Fig 2. Forward current as a function of forward voltage; typical values Fig 3. Reverse current as a function of reverse voltage; typical values mlc390 103 Cd (pF) 102 10 0 8 16 24 32 VR (V) 40 Schottky barrier rectifier f = 1 MHz Fig 4. Diode capacitance as a function of reverse voltage; typical values PMEM4030NS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 6 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module mle181 800 mle180 1.2 hFE VBE (V) (1) 600 (1) 0.8 (2) (2) 400 (3) (3) 0.4 200 0 10−1 1 102 10 103 104 IC (mA) NPN transistor; VCE = 2 V 0 10−1 1 10 102 103 104 IC (mA) NPN transistor; VCE = 2 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 5. DC current gain as a function of collector current; typical values mle183 1 Fig 6. Base-emitter voltage as a function of collector current; typical values mle182 103 RCEsat (Ω) VCEsat (V) 102 10−1 10 (1) (2) 1 (3) 10−2 (1) 10−1 10−3 10−1 1 10 102 103 104 IC (mA) NPN transistor; IC/IB = 20 10−2 10−1 (2) 1 102 103 104 IC (mA) NPN transistor; IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation resistance as a function of collector current; typical values PMEM4030NS_2 Product data sheet 10 (3) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 7 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module mle178 1200 (6) (5) (4) (3) (2) (7) (8) (4) 3 (5) (9) (6) (10) (7) 400 (1) 4 (3) 800 (2) IC (A) (1) IC (mA) mle179 5 2 (8) (9) 1 (10) 0 0 0 0.4 0.8 1.2 1.6 0 2 0.4 Tamb = 25 °C (1) IB = 120 mA (2) IB = 2340 µA (2) IB = 108 mA (3) IB = 2080 µA (3) IB = 96 mA (4) IB = 1820 µA (4) IB = 84 mA (5) IB = 1560 µA (5) IB = 72 mA (6) IB = 1300 µA (6) IB = 60 mA (7) IB = 1040 µA (7) IB = 48 mA (8) IB = 780 µA (8) IB = 36 mA (9) IB = 520 µA (9) IB = 24 mA (10) IB = 260 µA (10) IB = 12 mA 1.6 2 Fig 10. Collector current as a function of collector-emitter voltage; typical values PMEM4030NS_2 Product data sheet 1.2 Tamb = 25 °C (1) IB = 2600 µA Fig 9. Collector current as a function of collector-emitter voltage; typical values 0.8 VCE (V) VCE (V) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 8 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module mle184 1 mle185 1.4 VBEsat (V) VCEsat (V) 10−1 1 (1) (1) (2) (2) (3) 10−2 0.6 (3) 10−3 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C 0.2 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 (1) IC/IB = 100 (1) Tamb = −55 °C (2) IC/IB = 50 (2) Tamb = 25 °C (3) IC/IB = 10 (3) Tamb = 100 °C Fig 11. Collector-emitter saturation voltage as a function of collector current; typical values Fig 12. Base-emitter saturation voltage as a function of collector current; typical values 8. Application information VCC VIN VOUT CONTROLLER IN Rload mle231 Fig 13. DC-to-DC converter mdb577 Fig 14. Inductive load driver (relays, motors and buzzers) with free-wheeling diode PMEM4030NS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 9 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module 9. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 inches 0.069 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.05 0.01 0.01 0.004 0.028 0.012 0.244 0.039 0.028 0.041 0.228 0.016 0.024 θ 8o o 0 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 Fig 15. Package outline SOT96-1 (SO8/MS-012) PMEM4030NS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 10 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PMEM4030NS [1] Package SOT96-1 Description 8 mm pitch, 12 mm tape and reel 1000 2500 -115 -118 For further information and the availability of packing methods, see Section 16. PMEM4030NS_2 Product data sheet Packing quantity © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 11 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module 11. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PMEM4030NS_2 20050708 Product data sheet - - PMEM4030NS_1 Modifications: PMEM4030NS_1 • Table 5 “Limiting values”: ICRP repetitive pulsed collector current renamed to ICRM repetitive peak collector current 20050525 Product data sheet - PMEM4030NS_2 Product data sheet 9397 750 15065 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 12 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com PMEM4030NS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 8 July 2005 13 of 14 PMEM4030NS Philips Semiconductors NPN transistor/Schottky rectifier module 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 8 July 2005 Document number: PMEM4030NS_2 Published in The Netherlands