PMGD130UN,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Trench MOSFET technology  Very fast switching 1.3 Applications  Relay driver  Low-side loadswitch  High-speed line driver  Switching sircuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage ID drain current Per transistor VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] -8 - 8 V - - 1.3 A - 118 145 mΩ Static characteristics (per transistor) RDSon [1] drain-source on-state resistance VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline Graphic symbol 6 5 4 1 2 3 SOT363 (TSSOP6) D1 G1 S1 D2 S2 G2 017aaa254 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMGD130UN TSSOP6 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] PMGD130UN U8% [1] % = placeholder for manufacturing site code PMGD130UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 2 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage ID drain current Per transistor -8 8 V VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 1.3 A VGS = 4.5 V; Tamb = 25 °C [1] - 1.2 A VGS = 4.5 V; Tamb = 100 °C [1] - 0.7 A - 4.8 A [2] - 260 mW [1] - 310 mW - 905 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Source-drain diode source current Tamb = 25 °C [1] - 0.7 A Ptot total power dissipation Tamb = 25 °C [2] - 390 mW IS Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Normalized total power dissipation as a function of junction temperature PMGD130UN Product data sheet 0 −75 175 Tj (°C) Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa577 10 Limit RDSon = VDS/ID ID (A) tp = 100 μs 1 tp = 1 μs tp = 10 ms DC; Tsp = 25 °C 10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 1 tp = 100 ms 102 10 VDS (V) IDM = single pulse Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 417 480 K/W [2] - 352 405 K/W [3] - 295 340 K/W - 120 138 K/W - - 320 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to solder point Per device Rth(j-a) thermal resistance from junction to ambient [1] in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. PMGD130UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa578 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa579 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 10 10-3 0.02 0.01 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMGD130UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.7 1 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C - 118 145 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = 4.5 V; ID = 1.2 A; Tj = 150 °C - 179 220 mΩ VGS = 2.5 V; ID = 1 A; Tj = 25 °C - 155 204 mΩ VGS = 1.8 V; ID = 0.25 A; Tj = 25 °C - 213 318 mΩ VDS = 10 V; ID = 1.2 A; Tj = 25 °C - 4.1 - S - 0.88 1.3 nC - 0.12 - nC - 0.26 - nC - 83 - pF - 38 - pF - 27 - pF - 5 - ns - 17 - ns Dynamic characteristics (per transistor) QG(tot) total gate charge VDS = 10 V; ID = 1.2 A; VGS = 4.5 V; Tj = 25 °C QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 17 - ns tf fall time - 7 - ns - 0.8 1.2 V VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 10 V; ID = 1.2 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode (per transistor) VSD source-drain voltage PMGD130UN Product data sheet IS = 0.7 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 4.8 017aaa580 4.5 V 3.0 V 2.5 V ID (A) 017aaa599 10-3 VGS = 2.2 V ID (A) 3.6 2.0 V 10-4 min typ max 1.8 V 1.4 1.6 V 10-5 1.2 1.4 V 10-6 0 0 1 2 3 0 4 0.5 1.0 VDS (V) Tj = 25 °C Fig 6. Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa581 600 1.5 V 1.5 VGS (V) 1.6 V 1.8 V 2.0 V Fig 7. Sub-threshold drain current as a function of gate-source voltage 017aaa582 600 2.2 V RDSon (mΩ) RDSon (mΩ) 400 400 2.5 V 200 200 Tj = 150 °C 3.0 V VGS = 4.5 V Tj = 25 °C 0 0 0 1 2 3 4 5 0 2 ID (A) Tj = 25 °C Fig 8. Product data sheet 6 8 10 VGS (V) ID = 1 A Drain-source on-state resistance as a function of drain current; typical values PMGD130UN 4 Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa583 4.8 017aaa584 1.6 a ID (A) 1.4 3.2 1.2 1.0 1.6 Tj = 150 °C 0.8 Tj = 25 °C 0 0 1 2 0.6 -60 3 0 60 120 VGS (V) 180 Tj (°C) VDS > ID × RDSon Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa585 1.5 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa586 103 C (pF) VGS(th) (V) 1.0 102 max Ciss Coss Crss typ 0.5 10 min 0 -60 0 60 120 180 1 10-1 1 Tj (°C) VDS (V) ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V Fig 12. Gate-source threshold voltage as a function of junction temperature PMGD130UN Product data sheet 102 10 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa587 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0 0.25 0.50 0.75 1.00 QG (nC) ID = 1.2 A; VDS = 10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa588 2.8 IS (A) 2.1 1.4 0.7 Tj = 150 °C Tj = 25 °C 0 0 0.4 0.8 1.2 VSD (V) VGS = 0 V Fig 16. Source current as a function of source-drain voltage; typical values PMGD130UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 06-03-16 Fig 18. Package outline SOT363 (TSSOP6) PMGD130UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint for SOT363 (TSSOP6) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 20. Wave soldering footprint for SOT363 (TSSOP6) PMGD130UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMGD130UN v.1 20120601 Product data sheet - - PMGD130UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PMGD130UN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 June 2012 © NXP B.V. 2012. All rights reserved. 14 of 15 PMGD130UN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 June 2012 Document identifier: PMGD130UN