PMN15UN,115

Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety of packages, from the larger SOT223 to the ultra small DFN1006B-3, the ultimate in miniaturization. Key features New leadless package innovation – DFN2020MD-6 ` Voltage range: 12 to 300 V NXP has developed a new 2 x 2 mm leadless package with the ` Package sizes: 1 x 0.6 to 5 x 6 mm unique feature of 100% tin-plated, solderable side pads. ` RDSon as low as 10 mΩ The concept is based on galvanic plating. These solderable ` Leadless packages with 100% solderable side pads side pads enable visual inspection of solder joints, and allow ` ESD-protected devices up to 3 kV HBM for tighter contact onto the PCB. The package saves cost in production by eliminating the need for x-ray solder inspection. Key applications ` Power management ` Charging circuits NXP package 100% solderable side pads Packages from other suppliers ` Power switches (motors, fans, etc.) ` LED drivers ` LCD backlighting Key benefits ` New AEC-Q101 qualified types ` New ultra-small leadless package DFN1006B-3 ` New 2 x 2 mm leadless package with high Ptot capability to replace significantly larger packages like SO8 100% solder wetting solution with new 2 x 2 mm leadless package DFN2020MD-6 ` Optimal visual solder inspection ` High-quality solder connections ` No complete wetting on side pad ` Quality of solder connection difficult to determine ` Very limited options for optical solder inspection 8LIVQEPGETEFMPMX]GSQTEVMWSR Power dissipation per package based on different 4-layer PCB conditions PD [mW] 3000 2500 PD on 1 cm2 solder land 2000 1500 1000 PD on standard footprint 500 Package name Footprint size (mm) SOT457 DFN2020-6 SOT1118 DFN2020MD-6/DFN2020-3 SOT1220/SOT1061 SOT89 2.9 x 2.8 x 1.1 2 x 2 x 0.6 2 x 2 x 0.6 4.5 x 4 x 1.5 For more information please visit our website: http://www.nxp.com/campaigns/ultra-small-mosfets http://www.nxp.com/news/news-archive/2012/DFN2020-with-solderable-side-pads.html Small-signal MOSFETs in new DFN2020MD-6 (SOT1220) single package DFN2020MD-6 (SOT1220) Package Size (mm) 2.0 x 2.0 x 0.65 P tot (mW) >1500 ID (A) RDSon typ (mΩ) @ VGS = VGS (V) Nch 20 8 - 12 PMPB12UN* Nch Nch Nch Nch 20 20 20 20 8 12 12 12 2 2 20 10 15 23 PMPB20UN* PMPB10XNE* PMPB15XN* PMPB23XNE* Nch Nch Nch Nch Nch Nch 30 30 30 30 30 30 12 12 12 12 20 20 2 2 - 16 13 29 33 11 20 PMPB16XN* PMPB13XNE* PMPB29XNE* PMPB33XN* PMPB11EN* PMPB20EN* Nch Pch Pch Pch 60 12 20 20 16 12 12 12 - 40 15 19 33 PMPB40SNA* PMPB15XP* PMPB19XP* PMPB33XP* Pch Pch Pch Pch 20 20 20 30 12 12 12 12 2 2 2 - 20 29 43 47 PMPB20XPE* PMPB29XPE* PMPB43XPE* PMPB47XP* Pch Pch 30 30 20 20 - 27 48 PMPB27XP* PMPB48EP* 8.5 VGS(th) VGS(th) min (V) max (V) ESD QG typ protection (nC) (kV) VDS (V) Polarity 1.1 2.2 ton typ (ns) 24 toff typ (ns) 11 7.2 10 V 16 4.5 V 2.5 V 1.8 V 7QEPPWMKREP137*)8¯7GLSXXO]GSQFMREXMSR DFN2020-6 (SOT1118) Package Size (mm) 2.0 x 2.0 x 0.65 P tot (mW) >500 Configuration Single + Schottky VDS (V) VGS (V) 20 8 ID (A) ESD VGS(th) VGS(th) ton typ toff typ QG typ protection min (V) max (V) (ns) (ns) (nC) (kV) IF (A) VR (V) VF typ. (mA) RDSon typ (mΩ) @ VGS = 4.5 V 2.5 V 1.8 V 3.3 0.5 1.5 15 92 4.5 1 2 30 455 58 72 100 3.3 0.5 1.5 15 92 4.5 1 2.2 30 325 58 72 100 PMFPB6545UP 3 1 2.2 30 325 80 PMFPB8045XP* 3 1 2.2 30 325 80 PMFPB8032XP* PMFPB6532UP * Products to be released in 2012 VGS max (V) ID max (A) VGSth min (V) VGSth max (V) RDSon max @ VGS = 4.5 V (mΩ) RDSon max @ VGS = 2.5 V (mΩ)  VDS max (V) DFN2020-6 (SOT1118)  Channel type PMC85XP Package Type number 7QEPPWMKREP137*)8¯242XVERWMWXSVGSQFMREXMSR  P-ch MOSFET Channel type NPN RET 30 VCEO max (V) 50 12 VEBO max (V) 10 3.4 Io max (A) 0.1 0.45 VI (off) typ (V) 0.6 1 VI (on) typ (V) 0.9 110 hFE typ 100 140 VCEsat max (V) 0.1 Features and benefits Applications ` Trench MOSFET technology ` NPN transistor built-in bias resistors ` Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm ` ` ` ` ` Exposed drain pad for excellent thermal conduction ` Hard disk and computing power management Charging switch for portable devices High-side load switch USB port overvoltage protection Power management in battery-driven portables A p-channel MOSFET as main switch combined with a driver bipolar transistor including resistors, in one package for use in e.g. VBUS protection switches. 7GEPEFPIERH¾I\MFPIHMWGVIXIWSPYXMSRWFYMPXSR2