Small-signal MOSFET
Selection Guide
Broad selection of small-signal MOSFETs
for a wide range of applications
Our advanced MOSFET solutions deliver the flexibility and performance that today´s market
demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety
of packages, from the larger SOT223 to the ultra small DFN1006B-3, the ultimate in miniaturization.
Key features
New leadless package innovation – DFN2020MD-6
` Voltage range: 12 to 300 V
NXP has developed a new 2 x 2 mm leadless package with the
` Package sizes: 1 x 0.6 to 5 x 6 mm
unique feature of 100% tin-plated, solderable side pads.
` RDSon as low as 10 mΩ
The concept is based on galvanic plating. These solderable
` Leadless packages with 100% solderable side pads
side pads enable visual inspection of solder joints, and allow
` ESD-protected devices up to 3 kV HBM
for tighter contact onto the PCB. The package saves cost in
production by eliminating the need for x-ray solder inspection.
Key applications
` Power management
` Charging circuits
NXP package
100% solderable side pads
Packages from
other suppliers
` Power switches (motors, fans, etc.)
` LED drivers
` LCD backlighting
Key benefits
` New AEC-Q101 qualified types
` New ultra-small leadless package DFN1006B-3
` New 2 x 2 mm leadless package with high Ptot capability
to replace significantly larger packages like SO8
100% solder wetting solution
with new 2 x 2 mm leadless package
DFN2020MD-6
` Optimal visual solder inspection
` High-quality solder connections
` No complete wetting on side pad
` Quality of solder connection difficult
to determine
` Very limited options for optical
solder inspection
8LIVQEPGETEFMPMX]GSQTEVMWSR
Power dissipation per package based on different 4-layer PCB conditions
PD [mW]
3000
2500
PD on 1 cm2 solder land
2000
1500
1000
PD on standard footprint
500
Package
name
Footprint
size (mm)
SOT457
DFN2020-6
SOT1118
DFN2020MD-6/DFN2020-3
SOT1220/SOT1061
SOT89
2.9 x 2.8 x 1.1
2 x 2 x 0.6
2 x 2 x 0.6
4.5 x 4 x 1.5
For more information please visit our website:
http://www.nxp.com/campaigns/ultra-small-mosfets
http://www.nxp.com/news/news-archive/2012/DFN2020-with-solderable-side-pads.html
Small-signal MOSFETs in new DFN2020MD-6 (SOT1220) single package
DFN2020MD-6
(SOT1220)
Package
Size (mm)
2.0 x 2.0 x 0.65
P tot (mW)
>1500
ID
(A)
RDSon typ (mΩ) @ VGS =
VGS
(V)
Nch
20
8
-
12
PMPB12UN*
Nch
Nch
Nch
Nch
20
20
20
20
8
12
12
12
2
2
20
10
15
23
PMPB20UN*
PMPB10XNE*
PMPB15XN*
PMPB23XNE*
Nch
Nch
Nch
Nch
Nch
Nch
30
30
30
30
30
30
12
12
12
12
20
20
2
2
-
16
13
29
33
11
20
PMPB16XN*
PMPB13XNE*
PMPB29XNE*
PMPB33XN*
PMPB11EN*
PMPB20EN*
Nch
Pch
Pch
Pch
60
12
20
20
16
12
12
12
-
40
15
19
33
PMPB40SNA*
PMPB15XP*
PMPB19XP*
PMPB33XP*
Pch
Pch
Pch
Pch
20
20
20
30
12
12
12
12
2
2
2
-
20
29
43
47
PMPB20XPE*
PMPB29XPE*
PMPB43XPE*
PMPB47XP*
Pch
Pch
30
30
20
20
-
27
48
PMPB27XP*
PMPB48EP*
8.5
VGS(th) VGS(th)
min (V) max (V)
ESD
QG typ
protection
(nC)
(kV)
VDS
(V)
Polarity
1.1
2.2
ton typ
(ns)
24
toff typ
(ns)
11
7.2
10 V
16
4.5 V
2.5 V
1.8 V
7QEPPWMKREP137*)8¯7GLSXXO]GSQFMREXMSR
DFN2020-6
(SOT1118)
Package
Size (mm)
2.0 x 2.0 x 0.65
P tot (mW)
>500
Configuration
Single + Schottky
VDS
(V)
VGS
(V)
20
8
ID
(A)
ESD
VGS(th) VGS(th) ton typ toff typ QG typ
protection
min (V) max (V)
(ns)
(ns)
(nC)
(kV)
IF
(A)
VR
(V)
VF typ.
(mA)
RDSon typ (mΩ) @ VGS =
4.5 V
2.5 V
1.8 V
3.3
0.5
1.5
15
92
4.5
1
2
30
455
58
72
100
3.3
0.5
1.5
15
92
4.5
1
2.2
30
325
58
72
100
PMFPB6545UP
3
1
2.2
30
325
80
PMFPB8045XP*
3
1
2.2
30
325
80
PMFPB8032XP*
PMFPB6532UP
* Products to be released in 2012
VGS max (V)
ID max (A)
VGSth min (V)
VGSth max (V)
RDSon max @
VGS = 4.5 V (mΩ)
RDSon max @
VGS = 2.5 V (mΩ)
VDS max (V)
DFN2020-6
(SOT1118)
Channel type
PMC85XP
Package
Type number
7QEPPWMKREP137*)8¯242XVERWMWXSVGSQFMREXMSR
P-ch MOSFET
Channel type
NPN RET
30
VCEO max (V)
50
12
VEBO max (V)
10
3.4
Io max (A)
0.1
0.45
VI (off) typ (V)
0.6
1
VI (on) typ (V)
0.9
110
hFE typ
100
140
VCEsat max (V)
0.1
Features and benefits
Applications
` Trench MOSFET technology
` NPN transistor built-in bias resistors
` Small and leadless ultra thin SMD plastic package:
2 x 2 x 0.65 mm
`
`
`
`
` Exposed drain pad for excellent thermal conduction
` Hard disk and computing power management
Charging switch for portable devices
High-side load switch
USB port overvoltage protection
Power management in battery-driven portables
A p-channel MOSFET as main switch combined
with a driver bipolar transistor including resistors,
in one package for use in e.g. VBUS protection
switches.
7GEPEFPIERH¾I\MFPIHMWGVIXIWSPYXMSRWFYMPXSR2
很抱歉,暂时无法提供与“PMN15UN,115”相匹配的价格&库存,您可以联系我们找货
免费人工找货