PMSS3904

PMSS3904

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    PMSS3904 - NPN switching transistor - NXP Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
PMSS3904 数据手册
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 1999 May 27 NXP Semiconductors Product data sheet NPN switching transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification • Telephony and professional communication equipment. DESCRIPTION NPN switching transistor in an SC-70 (SOT323) plastic package. PNP complement: PMSS3906. PINNING PIN 1 2 3 base emitter collector PMSS3904 DESCRIPTION handbook, halfpage 3 3 1 MARKING CODE TYPE NUMBER PMSS3904 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SC-70; SOT323) and symbol. MARKING CODE(1) ∗04 2 1 Top view 2 MAM062 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 40 6 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 May 27 2 NXP Semiconductors Product data sheet NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V VCE = 1 V; see Fig.2 IC = 0.1 mA I C = 1 mA IC = 10 mA IC = 50 mA; note 1 IC = 100 mA; note 1 VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA; note 1 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA; note 1 IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 μA; VCE = 5 V; RS = 1 kΩ f = 10 Hz to 15.7 KHz 40 70 100 60 30 − − 650 − − − 180 − − − − MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PMSS3904 VALUE 625 UNIT K/W MAX. 50 10 50 − − 300 − − 200 300 850 950 4 12 − 5 UNIT nA μA nA mV mV mV mV pF pF MHz dB Switching times (between 10% and 90% levels); see Fig.3 ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = − 1 mA; VCC = 3 V; VBB = −1.9 V − − − − − − 110 50 60 1200 1000 200 ns ns ns ns ns ns 1999 May 27 3 NXP Semiconductors Product data sheet NPN switching transistor PMSS3904 handbook, full pagewidth 300 MBH724 hFE VCE = 5 V 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 Fig.2 DC gain current; typical values. handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MLB826 Vi = 5 V; T = 500 μs; tp = 10 μs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 May 27 4 NXP Semiconductors Product data sheet NPN switching transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMSS3904 SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 May 27 5 NXP Semiconductors Product data sheet NPN switching transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION PMSS3904 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 May 27 6 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/04/pp7 Date of release: 1999 May 27 Document order number: 9397 750 05965
PMSS3904
1. 物料型号: - 型号为PMSS3904。

2. 器件简介: - PMSS3904是一款NPN开关晶体管,采用SC-70(SOT323)塑料封装。其PNP互补型号为PMSS3906。

3. 引脚分配: - 1号引脚:基极(base) - 2号引脚:发射极(emitter) - 3号引脚:集电极(collector)

4. 参数特性: - 集电极-基极电压(VCBO):最大60V - 集电极-发射极电压(VCEO):最大40V - 发射极-基极电压(VEBO):最大6V - 集电极电流(Ic):直流时最大100mA,峰值200mA - 基极电流(IBM):峰值200mA - 总功率耗散(Ptot):在环境温度不超过25°C时最大200mW

5. 功能详解: - 该晶体管适用于一般用途的开关和放大,以及电话和专业通信设备。 - 直流增益(hFE)在不同集电极电流(Ic)下有不同的值,例如在Ic=0.1mA时为40,Ic=1mA时为100-300,Ic=50mA时为60。 - 集电极-发射极饱和电压(VcEsat)和基极-发射极饱和电压(VBEsat)在不同工作条件下有不同的值。

6. 应用信息: - 适用于一般用途的开关和放大,以及电话和专业通信设备。

7. 封装信息: - 封装类型为SOT323,是一种塑料表面贴装封装,共有3个引脚。 - 提供了详细的封装尺寸图和参数。
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