PRLL5818

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D121 PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product data sheet Supersedes data of 1996 May 03 1999 Apr 22 NXP Semiconductors Product data sheet Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed glass SMD package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. DESCRIPTION The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. handbook, halfpage PRLL5817; PRLL5818; PRLL5819 k a MAM190 Fig.1 Simplified outline (SOD87) and symbol. MARKING TYPE NUMBER PRLL5817 PRLL5818 PRLL5819 9 9 9 MARKING CODE 1999 Apr 22 2 NXP Semiconductors Product data sheet Schottky barrier diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR PRLL5817 PRLL5818 PRLL5819 VRSM non-repetitive peak reverse voltage PRLL5817 PRLL5818 PRLL5819 VRRM repetitive peak reverse voltage PRLL5817 PRLL5818 PRLL5819 VRWM crest working reverse voltage PRLL5817 PRLL5818 PRLL5819 IF(AV) IFSM Tstg Tj average forward current non-repetitive peak forward current storage temperature junction temperature Tamb = 60 °C PARAMETER continuous reverse voltage CONDITIONS PRLL5817; PRLL5818; PRLL5819 MIN. − − − − − − − − − − − − − − −65 − MAX. 20 30 40 24 36 48 20 30 40 20 30 40 1 25 +175 125 V V V V V V V V V V V V A A UNIT t = 10 ms half sine wave; Tj = Tj max prior to surge: VR = 0 °C °C 1999 Apr 22 3 NXP Semiconductors Product data sheet Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage PRLL5817 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage PRLL5818 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage PRLL5819 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A IR Cd reverse current diode capacitance PRLL5817 PRLL5818 PRLL5819 Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD87 standard mounting conditions. PARAMETER thermal resistance from junction to ambient VR = VRRMmax; note 1 VR = VRRMmax; Tj = 100 °C VR = 4 V; f = 1 MHz − − − − − − − − − − − − − − CONDITIONS PRLL5817; PRLL5818; PRLL5819 MIN. − − − − − − − − − TYP. MAX. 320 450 750 330 550 875 340 600 900 1 10 − − − UNIT mV mV mV mV mV mV mV mV mV mA mA pF pF pF 0.5 5 70 50 50 CONDITIONS note 1 VALUE 150 UNIT K/W 1999 Apr 22 4 NXP Semiconductors Product data sheet Schottky barrier diodes GRAPHICAL DATA PRLL5817; PRLL5818; PRLL5819 handbook, halfpage 5 MBE634 IF (A) 4 Tj = 125 oC 25 oC 3 2 1 0 0 0.5 VF (V) 1 Fig.2 Typical forward voltage. 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE642 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.3 PRLL817. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 5 1999 Apr 22 NXP Semiconductors Product data sheet Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE641 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.4 PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE643 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.5 PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 6 1999 Apr 22 NXP Semiconductors Product data sheet Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819 200 MBE635 MBE640 VRWM Tj (oC) 0.1 VRWM VR δ = 0.5 δ = 0.2 δ = 0.2 PR (W) 100 VR δ = 0.5 0.05 0 0 10 VR (V) 20 0 0 10 VR (V) 20 Fig.6 PRLL5817. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. Fig.7 PRLL5817. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions. 200 MBE636 MBE638 VRWM Tj (oC) 0.1 VRWM δ = 0.2 VR δ = 0.5 δ = 0.2 PR (W) 100 VR δ = 0.5 0.05 0 0 20 VR (V) 40 0 0 20 VR (V) 40 Fig.8 PRLL5818. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. Fig.9 PRLL5818. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions. 1999 Apr 22 7 NXP Semiconductors Product data sheet Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819 200 MBE637 MBE639 VRWM Tj (oC) 0.1 VRWM δ = 0.2 VR δ = 0.5 δ = 0.2 PR (W) 100 VR δ = 0.5 0.05 0 0 10 VR (V) 20 0 0 20 VR (V) 40 Fig.10 PRLL5819. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. Fig.11 PRLL5819. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions. 1999 Apr 22 8 NXP Semiconductors Product data sheet Schottky barrier diodes PACKAGE OUTLINE PRLL5817; PRLL5818; PRLL5819 Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors SOD87 k (2) a D1 D L DIMENSIONS (mm are the original dimensions) UNIT mm D 2.1 2.0 D1 2.0 1.8 H 3.7 3.3 L 0.3 H L 0 1 scale 2 mm Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. OUTLINE VERSION SOD87 REFERENCES IEC 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04 1999 Apr 22 9 NXP Semiconductors Product data sheet Schottky barrier diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production PRLL5817; PRLL5818; PRLL5819 DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Apr 22 10 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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