PRTR5V0U2D

PRTR5V0U2D Ultra low capacitance double rail-to-rail ESD protection Rev. 01 — 28 April 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection device in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. The device is designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. PRTR5V0U2D integrates two ultra low capacitance rail-to-rail ESD protection channels and one additional ESD protection diode to ensure signal line protection even if no supply voltage is available. 1.2 Features I I I I I I I I ESD protection of two Hi-Speed data lines or high-frequency signal lines Ultra low input/output to ground capacitance: C(I/O-GND) = 1 pF ESD protection up to 8 kV IEC 61000-4-2, level 4 (ESD) Very low clamping voltage due to an integrated additional ESD protection diode Very low reverse current AEC-Q101 qualified (85 °C) Small SMD plastic package 1.3 Applications I I I I I I I I USB 2.0 interfaces Digital Video Interface (DVI) High Definition Multimedia Interface (HDMI) Mobile and cordless phones Personal Digital Assistants (PDA) Digital cameras Wide Area Network (WAN) / Local Area Network (LAN) systems PCs, notebooks, printers and other PC peripherals NXP Semiconductors PRTR5V0U2D Ultra low capacitance double rail-to-rail ESD protection 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Per channel C(I/O-GND) C(I/O-I/O) Zener diode VRWM Csup [1] [2] [3] Parameter input/output to ground capacitance input/output to input/output capacitance reverse standoff voltage supply pin to ground capacitance Conditions f = 1 MHz; V(I/O-GND) = 0 V f = 1 MHz; V(I/O-I/O) = 0 V [1] Min - Typ 1.0 0.6 Max 1.5 - Unit pF pF [2] [3] - 16 5.5 - V pF f = 1 MHz; VCC = 0 V [3] Measured from pin 1, 3, 4 or 6 to ground. Measured from pin 1 or 6 to pin 3 or 4. Measured from pin 5 to ground. 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description input/output 1 ground input/output 2 input/output 2 supply voltage input/output 1 3 006aab349 Symbol I/O1 GND I/O2 I/O2 VCC I/O1 Simplified outline 6 5 4 Graphic symbol 1 6 1 2 3 2 5 4 3. Ordering information Table 3. Ordering information Package Name PRTR5V0U2D SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Marking Table 4. Marking codes Marking code ZB Type number PRTR5V0U2D PRTR5V0U2D_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 28 April 2009 2 of 12 NXP Semiconductors PRTR5V0U2D Ultra low capacitance double rail-to-rail ESD protection 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Tamb Tstg ambient temperature storage temperature −40 −55 +85 +125 °C °C Parameter Conditions Min Max Unit Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] [2] Device stressed with ten non-repetitive ESD pulses. Measured from pin 1, 3, 4 or 6 to pin 2 or 5. [1][2] Min - Max 8 10 Unit kV kV Per channel [2] PRTR5V0U2D_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 28 April 2009 3 of 12 NXP Semiconductors PRTR5V0U2D Ultra low capacitance double rail-to-rail ESD protection ESD standards compliance Conditions > 8 kV (contact) > 4 kV Table 7. Standard Per channel IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) 001aaa631 IPP 100 % 90 % 10 % tr = 0.7 ns to 1 ns 30 ns 60 ns t Fig 1. ESD pulse waveform according to IEC 61000-4-2 PRTR5V0U2D_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 28 April 2009 4 of 12 NXP Semiconductors PRTR5V0U2D Ultra low capacitance double rail-to-rail ESD protection 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Per channel IR C(I/O-GND) C(I/O-I/O) VF Zener diode VRWM VBR Csup [1] [2] [3] [4] Parameter reverse current input/output to ground capacitance input/output to input/output capacitance forward voltage reverse standoff voltage breakdown voltage supply pin to ground capacitance Conditions VR = 5 V f = 1 MHz; V(I/O-GND) = 0 V f = 1 MHz; V(I/O-I/O) = 0 V IF = 1 mA [1] [1] Min 6 - Typ