PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
Rev. 02 — 19 February 2009 Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices in leadless ultra small Surface-Mounted Device (SMD) plastic packages. The devices are designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. PRTR5V0U2F and PRTR5V0U2K integrate two ultra low capacitance rail-to-rail ESD protection channels and one additional ESD protection diode each to ensure signal line protection even if no supply voltage is available.
Table 1. Product overview Package NXP PRTR5V0U2F PRTR5V0U2K SOT886 SOT891 JEDEC MO-252 leadless ultra small leadless ultra small Package configuration
Type number
1.2 Features
I I I I I I I I ESD protection of two Hi-Speed data lines or high-frequency signal lines Ultra low input/output to ground capacitance: C(I/O-GND) = 1 pF ESD protection up to 8 kV IEC 61000-4-2, level 4 (ESD) Very low clamping voltage due to an integrated additional ESD protection diode Very low reverse current AEC-Q101 qualified Leadless ultra small SMD plastic packages
1.3 Applications
I I I I I I I USB 2.0 interfaces Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces Mobile and cordless phones Personal Digital Assistants (PDA) Digital cameras Wide Area Network (WAN) / Local Area Network (LAN) systems PCs, notebooks, printers and other PC peripherals
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Per channel C(I/O-GND) C(I/O-I/O) Zener diode VRWM Csup
[1] [2] [3]
Parameter input/output to ground capacitance input/output to input/output capacitance reverse standoff voltage supply pin to ground capacitance
Conditions f = 1 MHz; V(I/O-GND) = 0 V f = 1 MHz; V(I/O-I/O) = 0 V
[1]
Min -
Typ 1.0 0.6
Max 1.5 -
Unit pF pF
[2]
[3]
-
16
5.5 -
V pF
f = 1 MHz; VCC = 0 V
[3]
Measured from pin 1, 3, 4 or 6 to ground. Measured from pin 1 or 6 to pin 3 or 4. Measured from pin 5 to ground.
2. Pinning information
Table 3. Pin 1 2 3 4 5 6 Pinning Description input/output 1 ground input/output 2 input/output 2 supply voltage input/output 1
6 5 bottom view 4 3
006aab349
Symbol I/O1 GND I/O2 I/O2 VCC I/O1
Simplified outline
Graphic symbol
PRTR5V0U2F (SOT886)
1 2 3 1 6
2
5
4
PRTR5V0U2K (SOT891) 1 2 3 4 5 6 I/O1 GND I/O2 I/O2 VCC I/O1 input/output 1 ground input/output 2 input/output 2 supply voltage input/output 1
6 5 4 bottom view 3
006aab349
1
2
3 1 6
2
5
4
PRTR5V0U2F_PRTR5V0U2K_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
2 of 12
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
3. Ordering information
Table 4. Ordering information Package Name PRTR5V0U2F PRTR5V0U2K XSON6 XSON6 Description plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1 × 0.5 mm Version SOT886 SOT891 Type number
4. Marking
Table 5. Marking codes Marking code PF PK Type number PRTR5V0U2F PRTR5V0U2K
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Tamb Tstg ambient temperature storage temperature −40 −55 +85 +125 °C °C Parameter Conditions Min Max Unit
Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model)
[1] [2] Device stressed with ten non-repetitive ESD pulses. Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[1][2]
Min -
Max 8 10
Unit kV kV
Per channel
[2]
PRTR5V0U2F_PRTR5V0U2K_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
3 of 12
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
ESD standards compliance Conditions > 8 kV (contact) > 4 kV
Table 8. Standard
Per channel IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
001aaa631
IPP 100 % 90 %
10 % tr = 0.7 ns to 1 ns 30 ns 60 ns t
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
PRTR5V0U2F_PRTR5V0U2K_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
4 of 12
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
6. Characteristics
Table 9. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Per channel IR C(I/O-GND) C(I/O-I/O) VF Zener diode VRWM VBR Csup
[1] [2] [3] [4]
Parameter reverse current input/output to ground capacitance input/output to input/output capacitance forward voltage reverse standoff voltage breakdown voltage supply pin to ground capacitance
Conditions VR = 5 V f = 1 MHz; V(I/O-GND) = 0 V f = 1 MHz; V(I/O-I/O) = 0 V IF = 1 mA
[1] [1]
Min 6 -
Typ
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