PRTR5V0U2K

PRTR5V0U2F; PRTR5V0U2K Ultra low capacitance double rail-to-rail ESD protection Rev. 01 — 6 November 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices in leadless ultra small Surface-Mounted Device (SMD) plastic packages. The devices are designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. PRTR5V0U2F and PRTR5V0U2K integrate two ultra low capacitance rail-to-rail ESD protection channels and one additional ESD protection diode each to ensure signal line protection even if no supply voltage is available. Table 1. Product overview Package NXP PRTR5V0U2F PRTR5V0U2K SOT886 SOT891 JEDEC MO-252 leadless ultra small leadless ultra small Package configuration Type number 1.2 Features I I I I I I I ESD protection of two Hi-Speed data lines or high-frequency signal lines Ultra low input/output to ground capacitance: C(I/O-GND) = 1 pF ESD protection up to 8 kV IEC 61000-4-2, level 4 (ESD) Very low clamping voltage due to an integrated additional ESD protection diode Very low reverse current Leadless ultra small SMD plastic packages 1.3 Applications I I I I I I I USB 2.0 interfaces Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces Mobile and cordless phones Personal Digital Assistants (PDA) Digital cameras Wide Area Network (WAN) / Local Area Network (LAN) systems PCs, notebooks, printers and other PC peripherals NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K Ultra low capacitance double rail-to-rail ESD protection 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Per channel C(I/O-GND) C(I/O-I/O) Zener diode VRWM Csup [1] [2] [3] Parameter input/output to ground capacitance input/output to input/output capacitance reverse standoff voltage supply pin to ground capacitance Conditions f = 1 MHz; V(I/O-GND) = 0 V f = 1 MHz; V(I/O-I/O) = 0 V [1] Min - Typ 1.0 0.6 Max 1.5 - Unit pF pF [2] [3] - 16 5.5 - V pF f = 1 MHz; VCC = 0 V [3] Measured from pin 1, 3, 4 or 6 to ground. Measured from pin 1 or 6 to pin 3 or 4. Measured from pin 5 to ground. 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description input/output 1 ground input/output 2 input/output 2 supply voltage input/output 1 6 5 bottom view 4 3 006aab349 Symbol I/O1 GND I/O2 I/O2 VCC I/O1 Simplified outline Graphic symbol PRTR5V0U2F (SOT886) 1 2 3 1 4 2 5 6 PRTR5V0U2K (SOT891) 1 2 3 4 5 6 I/O1 GND I/O2 I/O2 VCC I/O1 input/output 1 ground input/output 2 input/output 2 supply voltage input/output 1 6 5 4 bottom view 3 006aab349 1 2 3 1 4 2 5 6 PRTR5V0U2F_PRTR5V0U2K_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 6 November 2008 2 of 12 NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K Ultra low capacitance double rail-to-rail ESD protection 3. Ordering information Table 4. Ordering information Package Name PRTR5V0U2F PRTR5V0U2K XSON6 XSON6 Description plastic extremely thin small outline package; no leads; 6 terminals; body 1 1.45 0.5 mm plastic extremely thin small outline package; no leads; 6 terminals; body 1 1 0.5 mm Version SOT886 SOT891 Type number 4. Marking Table 5. Marking codes Marking code PF PK Type number PRTR5V0U2F PRTR5V0U2K 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Tamb Tstg ambient temperature storage temperature −40 −55 +85 +125 °C °C Parameter Conditions Min Max Unit Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] [2] Device stressed with ten non-repetitive ESD pulses. Measured from pin 1, 3, 4 or 6 to pin 2 or 5. [1][2] Min - Max 8 10 Unit kV kV Per channel [2] PRTR5V0U2F_PRTR5V0U2K_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 6 November 2008 3 of 12 NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K Ultra low capacitance double rail-to-rail ESD protection ESD standards compliance Conditions > 8 kV (contact) > 4 kV Table 8. Standard Per channel IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) 001aaa631 IPP 100 % 90 % 10 % tr = 0.7 ns to 1 ns 30 ns 60 ns t Fig 1. ESD pulse waveform according to IEC 61000-4-2 PRTR5V0U2F_PRTR5V0U2K_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 6 November 2008 4 of 12 NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K Ultra low capacitance double rail-to-rail ESD protection 6. Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Per channel IR C(I/O-GND) C(I/O-I/O) VF Zener diode VRWM VBR Csup [1] [2] [3] [4] Parameter reverse current input/output to ground capacitance input/output to input/output capacitance forward voltage reverse standoff voltage breakdown voltage supply pin to ground capacitance Conditions VR = 5 V f = 1 MHz; V(I/O-GND) = 0 V f = 1 MHz; V(I/O-I/O) = 0 V IF = 1 mA [1] [1] Min 6 - Typ