PRTR5V0U2X

PRTR5V0U2X Ultra low capacitance double rail-to-rail ESD protection diode Rev. 02 — 14 January 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. PRTR5V0U2X incorporates two pairs of ultra low capacitance rail-to-rail diodes as well as an additional ESD protection diode to ensure signal line protection even if no supply voltage is available. 1.2 Features I I I I I I I ESD protection of two Hi-Speed data lines or high-frequency signal lines Ultra low input/output to ground capacitance: C(I/O-GND) = 1 pF ESD protection up to 8 kV IEC 61000-4-2, level 4 (ESD) Very low clamping voltage due to an integrated additional ESD protection diode Very low reverse current Small SMD plastic package 1.3 Applications I I I I I I I USB 2.0 ports Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces Mobile and cordless phones Personal Digital Assistants (PDA) Digital cameras Wide Area Network (WAN) / Local Area Network (LAN) systems PCs, notebooks, printers and other PC peripherals NXP Semiconductors PRTR5V0U2X Ultra low capacitance double rail-to-rail ESD protection diode 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Per diode VRWM C(I/O-GND) Csup [1] [2] Parameter reverse standoff voltage input/output to ground capacitance supply pin to ground capacitance Conditions Min - Typ 1 16 Max 5.5 1.5 - Unit V pF pF f = 1 MHz; V(I/O-GND) = 0 V f = 1 MHz; VCC = 0 V [1] - [2] Measured from pin 2 and 3 to ground. Measured from pin 4 to ground. 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Symbol GND I/O 1 I/O 2 VCC Description ground input/output 1 input/output 2 supply voltage 1 2 2 006aaa482 Simplified outline 4 3 Graphic symbol 1 4 3 3. Ordering information Table 3. Ordering information Package Name PRTR5V0U2X Description plastic surface-mounted package; 4 leads Version SOT143B Type number 4. Marking Table 4. Marking codes Marking code[1] *R1 Type number PRTR5V0U2X [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PRTR5V0U2X_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 14 January 2008 2 of 11 NXP Semiconductors PRTR5V0U2X Ultra low capacitance double rail-to-rail ESD protection diode 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Tamb Tstg Table 6. Standard Per diode IEC 61000-4-2; level 4 (ESD) > 8 kV (contact) ambient temperature storage temperature ESD standards compliance Conditions −40 −55 +85 +125 °C °C Parameter Conditions Min Max Unit 001aaa631 IPP 100 % 90 % 10 % tr = 0.7 ns to 1 ns 30 ns 60 ns t Fig 1. ESD pulse waveform according to IEC 61000-4-2 PRTR5V0U2X_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 14 January 2008 3 of 11 NXP Semiconductors PRTR5V0U2X Ultra low capacitance double rail-to-rail ESD protection diode 6. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Per diode VRWM IR VBR C(I/O-GND) C(I/O-I/O) Csup VF [1] [2] [3] [4] Parameter reverse standoff voltage reverse current breakdown voltage input/output to ground capacitance input/output to input/output capacitance supply pin to ground capacitance forward voltage Conditions Min - Typ