PSMN3R9-60XSQ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia TO -2 20F PSMN3R9-60XS N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) 12 September 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • • High efficiency due to low switching and conduction losses Isolated package Suitable for standard level gate drive 3. Applications • • • • AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 75 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 55 W VGS = 10 V; ID = 25 A; Tj = 25 °C; - 3.25 4 mΩ [1] Static characteristics RDSon drain-source on-state resistance Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge VGS = 10 V; ID = 25 A; VDS = 48 V; - 34.7 - nC total gate charge Fig. 13; Fig. 14 - 103 - nC VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; - - 478 mJ Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Vsup ≤ 60 V; RGS = 50 Ω; unclamped; Fig. 3 Scan or click this QR code to view the latest information for this product PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) [1] Continuous current is limited by package 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb Simplified outline Graphic symbol D mb G mounting base; isolated S mbb076 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package PSMN3R9-60XS Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V VDGR drain-gate voltage RGS = 20 kΩ - 60 V VGS gate-source voltage -20 20 V ID drain current - 56 A - 75 A VGS = 10 V; Tmb = 100 °C; Fig. 1 VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 318 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 55 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C PSMN3R9-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2013 © NXP N.V. 2013. All rights reserved 2 / 13 PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) Symbol Parameter Conditions Min Max Unit Source-drain diode IS source current Tmb = 25 °C - 46 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 318 A VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; - 478 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Vsup ≤ 60 V; RGS = 50 Ω; unclamped; Fig. 3 [1] Continuous current is limited by package aaa-008785 100 ID (A) 03aa16 120 Pder (%) 75 (1) 80 50 40 25 0 0 25 50 75 100 125 150 175 Tmb (°C) 0 200 (1) Capped at 75A due to package Fig. 1. Continuous drain current as a function of mounting base temperature PSMN3R9-60XS Product data sheet Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 12 September 2013 50 © NXP N.V. 2013. All rights reserved 3 / 13 PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) IAL (A) aaa-008786 102 (1) (2) 10 1 10-2 Fig. 3. ID (A) 10-1 1 10 tAL (ms) Single pulse avalanche rating; avalanche current as a function of avalanche time aaa-008787 103 tp = 10 us Limit RDSon = VDS / ID 102 100 us 10 DC 1 ms 10 ms 100 ms 1 10-1 10-1 Fig. 4. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 2.5 2.73 K/W Rth(j-a) thermal resistance from junction to ambient - 55 - K/W PSMN3R9-60XS Product data sheet vertical in free air All information provided in this document is subject to legal disclaimers. 12 September 2013 © NXP N.V. 2013. All rights reserved 4 / 13 PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) aaa-008788 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 0.02 P 10-2 δ= T single shot tp 10-3 10-6 Fig. 5. tp 10-5 10-4 10-3 10-2 10-1 1 t T 10 102 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Min Typ Max Unit Cisol isolation capacitance - 10 - pF Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal waveform; clean and dust free - - 2500 V Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 2.4 3 4 V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 4.5 V 1 - - V VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.07 1 µA VDS = 60 V; VGS = 0 V; Tj = 175 °C - - 500 µA [1] Conditions [1] f = 1 MHz 10. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics V(BR)DSS VGS(th) VGSth Fig. 9; Fig. 10 Fig. 9 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9 IDSS drain leakage current PSMN3R9-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2013 © NXP N.V. 2013. All rights reserved 5 / 13 PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; - - 8.7 mΩ - 3.25 4 mΩ f = 1 MHz - 0.71 - Ω total gate charge ID = 25 A; VDS = 48 V; VGS = 10 V; - 103 - nC QGS gate-source charge Fig. 13; Fig. 14 - 25.1 - nC QGD gate-drain charge - 34.7 - nC Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 5494 - pF Coss output capacitance Tj = 25 °C; Fig. 15 - 743 - pF Crss reverse transfer capacitance - 455 - pF td(on) turn-on delay time VDS = 30 V; RL = 1 Ω; VGS = 10 V; - 30.6 - ns tr rise time RG(ext) = 5 Ω - 71.2 - ns td(off) turn-off delay time - 63.7 - ns tf fall time - 64.4 - ns RDSon drain-source on-state resistance Fig. 11 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 RG gate resistance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.76 1.2 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 40.5 - ns recovered charge VDS = 30 V - 53 - nC Qr PSMN3R9-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2013 © NXP N.V. 2013. All rights reserved 6 / 13 PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) aaa-008789 300 ID (A) 10 V 8V aaa-008790 20 RDSon (mΩ) 6V 240 16 VGS = 5.5 V 180 12 120 8 5V 60 4 4.5 V 0 Fig. 6. 0 0.5 1 1.5 VDS (V) 0 2 Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values aaa-008792 300 0 4 8 003aah027 max 240 4 180 3 typ 120 2 min 0 Fig. 8. 0 1 2 3 4 1 Tj = 25°C 5 6 7 VGS (V) 0 -60 8 Transfer characteristics; drain current as a function of gate-source voltage; typical values PSMN3R9-60XS Product data sheet 20 Drain-source on-state resistance as a function of gate-source voltage; typical values VGS(th) (V) 150°C 16 VGS (V) 5 ID (A) 60 12 Fig. 9. 60 120 T j (°C) 180 Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. 12 September 2013 0 © NXP N.V. 2013. All rights reserved 7 / 13 PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) 003aah028 10-1 003aag814 2.4 ID (A) a 10-2 1.8 typ min 10-3 max 1.2 10-4 0.6 10-5 10-6 0 2 4 0 -60 6 VGS (V) Fig. 10. Sub-threshold drain current as a function of gate-source voltage 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance factor as a function of junction temperature aaa-008793 10 RDSon (mΩ) 5V 5.5 V VDS ID 8 6V VGS(pl) 6 VGS(th) 4 VGS 8V QGS1 10 V QGS2 QGS 2 QGD QG(tot) 003aaa508 0 0 60 120 180 240 ID (A) Fig. 13. Gate charge waveform definitions 300 Fig. 12. Drain-source on-state resistance as a function of drain current; typical values PSMN3R9-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2013 © NXP N.V. 2013. All rights reserved 8 / 13 PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) 003aah402 10 VGS (V) 8 aaa-008795 104 C (pF) Ciss 14 V 6 VDS = 48V 103 Coss 4 Crss 2 0 0 40 80 QG (nC) 102 10-1 120 1 10 VDS (V) 102 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-008796 300 IS (A) 240 180 120 60 0 150°C 0 0.3 0.6 Tj = 25°C 0.9 1.2 1.5 VSD (V) 1.8 Fig. 16. Source current as a function of source-drain voltage; typical values PSMN3R9-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2013 © NXP N.V. 2013. All rights reserved 9 / 13 PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) 11. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 (1) L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are # 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig. 17. Package outline TO-220F (SOT186A) PSMN3R9-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2013 © NXP N.V. 2013. All rights reserved 10 / 13 PSMN3R9-60XS NXP Semiconductors N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................2 8 Thermal characteristics .........................................4 9 Isolation characteristics ........................................5 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 September 2013 PSMN3R9-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2013 © NXP N.V. 2013. All rights reserved 13 / 13