SA5219D,602

INTEGRATED CIRCUITS SA5219 Wideband variable gain amplifier Product specification Replaces data of 1993 Dec 10 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Wideband variable gain amplifier SA5219 DESCRIPTION PIN CONFIGURATION The SA5219 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. N, D PACKAGES VCC1 1 16 VCC2 The SA5219 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1kΩ) differential inputs. The output is 50Ω differential. Therefore, the 5219 can simultaneously perform AGC, impedance transformation, and the balun functions. GND1 2 15 GND2 INA 3 14 OUTA GND1 4 13 GND2 INB 5 12 OUTB GND1 6 11 GND2 The dynamic range is excellent over a wide range of gain setting. Furthermore, the noise performance degrades at a comparatively slow rate as the gain is reduced. This is an important feature when building linear AGC systems. VBG 7 10 GND2 VAGC 8 9 GND2 SR00273 Figure 1. Pin Configuration FEATURES • 700MHz bandwidth • High impedance differential input • 50Ω differential output • Single 5V power supply • 0 - 1V gain control pin • >60dB gain control range at 200MHz • 26dB maximum gain differential • Exceptional VCONTROL / VGAIN linearity • 7dB noise figure minimum • Full ESD protection • Easily cascadable APPLICATIONS • Linear AGC systems • Very linear AM modulator • RF balun • Cable TV multi-purpose amplifier • Fiber optic AGC • RADAR • User programmable fixed gain block • Video • Satellite receivers • Cellular communications ORDERING INFORMATION Temperature Range Order Code DWG # 16-Pin Plastic Small Outline (SO) package Description -40 to +85°C SA5219D SOT109-1 16-Pin Plastic Dual In-Line package (DIP) -40 to +85°C SA5219N SOT38-4 1997 Nov 07 2 853-1724 18663 Philips Semiconductors Product specification Wideband variable gain amplifier SA5219 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNITS VCC Supply voltage -0.5 to +8.0 V PD Power dissipation, TA = 25oC (still air)1 16-Pin Plastic DIP 16-Pin Plastic SO 1450 1100 mW mW TJMAX Maximum operating junction temperature 150 °C TSTG Storage temperature range -65 to +150 °C NOTES: 1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA: 16-Pin DIP: θJA = 85°C/W 16-Pin SO: θJA = 110°C/W RECOMMENDED OPERATING CONDITIONS SYMBOL VCC PARAMETER Supply voltage RATING UNITS VCC1 = VCC2 = 4.5 to 7.0V V TA Operating ambient temperature range SA Grade -40 to +85 °C TJ Operating junction temperature range SA Grade -40 to +105 °C DC ELECTRICAL CHARACTERISTICS TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ICC Supply current DC tested 36 43 50 mA AV Voltage gain (single-ended in/single-ended out) DC tested, RL = 10kΩ 16 19 22 dB AV Voltage gain (single-ended in/differential out) DC tested, RL = 10kΩ 22 25 28 dB RIN Input resistance (single-ended) DC tested at ±50µA 0.8 1.2 1.6 kΩ ROUT Output resistance (single-ended) DC tested at ±1mA 35 60 80 Ω VOS Output offset voltage (output referred) +20 ±150 mV VIN DC level on inputs 1.6 2.0 2.4 V VOUT DC level on outputs 1.9 2.4 2.9 V PSRR Output offset supply rejection ratio 18 45 1.2 1.32 2 10 kΩ 0-1.3 V VBG Bandgap reference voltage RBG Bandgap loading VAGC AGC DC control voltage range IBAGC AGC pin DC bias current 1997 Nov 07 4.5V