SL3S1213FTB0

SL3S1203_1213 UCODE G2iL and G2iL+ Rev. 3.2 — 9 November 2010 198732 Product short data sheet PUBLIC 1. General description NXP’s UCODE G2iL series transponder ICs offer leading-edge read range and support industry-first features such as a Tag Tamper Alarm, Data Transfer, Digital Switch, and advanced privacy-protection modes. Very high chip sensitivity (−18 dBm) enables longer read ranges with simple, single-port antenna designs. When connected to a power supply, the READ as well as the WRITE range can be boosted to a sensitivity of −27 dBm. In fashion and retail the UCODE G2iL series improve read rates and provide for theft deterrence. In the electronic device market, they’re ideally suited for device configuration, activation, production control, and PCB tagging. In authentication applications, they protect brands and guard against counterfeiting. They can also be used to tag containers, electronic vehicles, airline baggage, and more. In addition to the EPC specifications the G2iL offers an integrated Product Status Flag (PSF) feature and read protection of the memory content. On top of the G2iL features the G2iL+ offers an integrated tag tamper alarm, digital switch, external supply mode, read range reduction and data transfer mode. 2. Features and benefits 2.1 Key features UHF RFID Gen2 tag chip according EPCglobal v1.2.0 with 128 bit EPC memory Memory read protection Integrated Product Status Flag (PSF) Tag tamper alarm Digital switch Data transfer mode Real Read Range Reduction (Privacy Mode) External supply mode 2.1.1 Memory 128-bit of EPC memory 64-bit Tag IDentifier (TID) including 32-bit factory locked unique serial number 32-bit kill password to permanently disable the tag 32-bit access password to allow a transition into the secured state Data retention: 20 years NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ Broad international operating frequency: from 840 MHz to 960 MHz Long read/write ranges due to extremely low power design Reliable operation of multiple tags due to advanced anti-collision READ protection WRITE Lock Wide specified temperature range: −40 °C up to +85 °C 2.2 Key benefits 2.2.1 End user benefit Prevention of unauthorized memory access through read protection Indication of tag tampering attempt by use of the tag tamper alarm feature Electronic device configuration and / or activation by the use of the digital switch / data transfer mode Theft deterrence supported by the PSF feature (PSF alarm or EPC code) Small label sizes, long read ranges due to high chip sensitivity Product identification through unalterable extended TID range, including a 32-bit serial number Reliable operation in dense reader and noisy environments through high interference suppression 2.2.2 Antenna design benefits High sensitivity enables small and cost efficient antenna designs Low Q-Value eases broad band antenna design for global usage 2.2.3 Label manufacturer benefit Consistent performance on different materials due to low Q-factor Ease of assembly and high assembly yields through large chip input capacitance Fast first WRITE of the EPC memory for fast label initialization 2.3 Custom commands PSF Alarm Built-in PSF (Product Status Flag), enables the UHF RFID tag to be used as EAS tag (Electronic Article Surveillance) tag without the need for a back-end data base. Read Protect Protects all memory content including CRC16 from unauthorized reading. ChangeConfig Configures the additional features of the chip like external supply mode, tamper alarm, digital switch, read range reduction or data transfer. The UCODE G2iL is equipped with a number of additional features and custom commands. Nevertheless, the chip is designed in a way standard EPCglobal READ/WRITE/ACCESS commands can be used to operate the features. No custom commands are needed to take advantage of all the features in case of unlocked EPC memory. SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 2 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ 3. Applications 3.1 Markets Fashion (Apparel and footwear) Retail Electronics Fast Moving Consumer Goods Asset management Electronic Vehicle Identification 3.2 Applications Supply chain management Item level tagging Pallet and case tracking Container identification Product authentication PCB tagging Cost efficient, low level seals Wireless firmware download Wireless product activation 4. Quick reference data Table 1. Symbol tret Nendu(W) [1] Quick reference data Parameter retention time write endurance Conditions Tamb ≤ 55 °C Min 20 1000 Typ 10000[1] Max Unit year cycle EEPROM characteristics Tamb ≤ 25 °C 5. Ordering information Table 2. Ordering information Package Name SL3S1203FUF SL3S1213FUF SL3S1203FTB0 Wafer Wafer XSON6 Description bumped G2iL die on sawn 8” wafer bumped G2iL+ die on sawn 8” wafer Version not applicable not applicable Type number G2iL, plastic extremely thin small outline SOT886F1 package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm G2iL+, plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886F1 SL3S1213FTB0 XSON6 SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 3 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ 6. Marking Table 3. Marking codes Marking code UN UQ Comment UCODE G2iL UCODE G2iL+ Version SOT886 SOT886 Type number SL3S1203FTB0 SL3S1213FTB0 7. Block diagram The SL3S12x3 IC consists of three major blocks: - Analog Interface - Digital Controller - EEPROM The analog part provides stable supply voltage and demodulates data received from the reader for being processed by the digital part. Further, the modulation transistor of the analog part transmits data back to the reader. The digital section includes the state machines, processes the protocol and handles communication with the EEPROM, which contains the EPC and the user data. ANALOG RF INTERFACE VREG PAD VDD DIGITAL CONTROL EEPROM ANTICOLLISION RECT DEMOD data in READ/WRITE CONTROL ANTENNA MOD PAD data out ACCESS CONTROL MEMORY EEPROM INTERFACE CONTROL PAD VDD PAD OUT I/O CONTROL RF INTERFACE CONTROL I/O CONTROL R/W SEQUENCER CHARGE PUMP 001aam226 Fig 1. Block diagram of G2iL IC SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 4 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ 8. Pinning information OUT RFN RFP SL3S12x3FTB0 1 6 VDD n.c. 2 5 n.c. VDD NXP trademark RFP RFN 3 4 OUT 001aan103 001aam529 Transparent top view Fig 2. Pinning bare die Fig 3. Pin configuration for SOT886 8.1 Pin description Table 4. Symbol OUT RFN VDD RFP Table 5. Pin 1 2 3 4 5 6 Pin description bare die Description output pin grounded antenna connector external supply ungrounded antenna connector Pin description SOT886 Symbol RFP n.c. RFN OUT n.c. VDD Description ungrounded antenna connector not connected grounded antenna connector output pin not connected external supply SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 5 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ 9. Wafer layout 9.1 Wafer layout (1) OUT (5) RFN Y (6) (4) X (7) VDD (8) RFP (2) (3) not to scale! 001aak871 (1) X-scribe line width: 15 μm (2) Y-scribe line width: 15 μm (3) Chip step, x-length: 485 μm (4) Chip step, y-length: 435 μm (5) Bump to bump distance X (OUT - RFN): 383 μm (6) Bump to bump distance Y (RFN - RFP): 333 μm (7) Distance bump to metal sealring X: 40,3 μm (outer edge - top metal) (8) Distance bump to metal sealring Y: 40,3 μm Bump size X × Y: 60 μm × 60 μm Remark: OUT and VDD are used with G2iL+ only Fig 4. G2iL wafer layout SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 6 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ 10. Mechanical specification 10.1 Wafer specification See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on UV-tape with electronic fail die marking, BU-ID document number: 1093**”. 10.1.1 Wafer Table 6. Specifications Wafer Designation Diameter Thickness Number of pads Pad location Distance pad to pad RFN-RFP Distance pad to pad OUT-RFN Process Batch size Potential good dies per wafer each wafer is scribed with batch number and wafer number 200 mm (8”) 75 μm ± 15 μm 4 non diagonal/ placed in chip corners 333.0 µm 383.0 µm CMOS 0.14 µm 25 wafers 130.000 Si ground and stress release Ra max. 0.5 μm, Rt max. 5 μm 0.485 mm × 0.435 mm = 0.211 mm2 x-dimension = 15 μm y-dimension = 15 μm Wafer backside Material Treatment Roughness Chip dimensions Die size including scribe Scribe line width: Passivation on front Type Material Thickness Sandwich structure PE-Nitride (on top) 1.75 μm total thickness of passivation > 99.9% pure Au 35 – 80 HV 0.005 > 70 MPa 18 μm ± 2 μm ± 3 μm ± 4 μm ±1.5 μm Au bump Bump material Bump hardness Bump shear strength Bump height Bump height uniformity within a die – within a wafer – wafer to wafer Bump flatness SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 7 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ Specifications Table 6. Bump size – RFP, RFN – OUT, VDD Bump size variation 60 × 60 μm 60 × 60 μm ± 5 μm 10.1.2 Fail die identification No inkdots are applied to the wafer. Electronic wafer mapping (SECS II format) covers the electrical test results and additionally the results of mechanical/visual inspection. See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on UV-tape with electronic fail die marking, BU-ID document number: 1093**” 10.1.3 Map file distribution See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on UV-tape with electronic fail die marking, BU-ID document number: 1093**” SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 8 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ 11. Functional description 11.1 Air interface standards The UCODE G2iL fully supports all parts of the "Specification for RFID Air Interface EPCglobal, EPCTM Radio-Frequency Identity Protocols, Class-1 Generation-2 UHF RFID, Protocol for Communications at 860 MHz to 960 MHz, Version 1.2.0". 11.2 Power transfer The interrogator provides an RF field that powers the tag, equipped with a UCODE G2iL. The antenna transforms the impedance of free space to the chip input impedance in order to get the maximum possible power for the G2iL on the tag. The G2iL+ can also be supplied externally. The RF field, which is oscillating on the operating frequency provided by the interrogator, is rectified to provide a smoothed DC voltage to the analog and digital modules of the IC. The antenna that is attached to the chip may use a DC connection between the two antenna pads. Therefore the G2iL also enables loop antenna design. Possible examples of supported antenna structures can be found in the reference antenna design guide. 11.3 Data transfer 11.3.1 Reader to tag Link An interrogator transmits information to the UCODE G2iL by modulating an UHF RF signal. The G2iL receives both information and operating energy from this RF signal. Tags are passive, meaning that they receive all of their operating energy from the interrogator's RF waveform. In order to further improve the read range the UCODE G2iL can be externally supplied as well so the energy to operate the chip does not need to be transmitted by the reader. An interrogator is using a fixed modulation and data rate for the duration of at least one inventory round. It communicates to the G2iL by modulating an RF carrier using DSB-ASK with PIE encoding. For further details refer to Section 16, Ref. 1. Interrogator-to-tag (R=>T) communications. 11.3.2 Tag to reader Link An interrogator receives information from a G2iL by transmitting an unmodulated RF carrier and listening for a backscattered reply. The G2iL backscatters by switching the reflection coefficient of its antenna between two states in accordance with the data being sent. For further details refer to Section 16, Ref. 1, chapter 6.3.1.3. The UCODE G2iL communicates information by backscatter-modulating the amplitude and/or phase of the RF carrier. Interrogators shall be capable of demodulating either demodulation type. The encoding format, selected in response to interrogator commands, is either FM0 baseband or Miller-modulated subcarrier. SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 9 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ 11.4 G2iL and G2iL+ differences The UCODE G2iL is tailored for application where mainly EPC or TID number space is needed. The G2iL+ in addition provides functionality such as tag tamper alarm, external supply operation to further boost read/write range (external supply mode), a Privacy mode reducing the read range or I/O functionality (data transfer to externally connected devices) required. The following table provides an overview of G2iL, G2iL+ special features. Table 7. Features Read protection (bankwise) PSF (Built-in Product Status Flag) Backscatter strength reduction Tag tamper alarm Digital switch / Digital input External supply mode Data transfer Real read range reduction Overview of G2iL and G2iL+ features G2iL yes yes yes G2iL+ yes yes yes yes yes yes yes yes 11.5 Supported commands The G2iL supports all mandatory EPCglobal V1.2.0 commands. In addition the G2iL supports the following optional commands: • ACCESS The G2iL features the following custom commands described more in detail later: • • • • • ResetReadProtect ReadProtect ChangeEAS EAS_Alarm ChangeConfig (backward compatible to G2X) (backward compatible to G2X) (backward compatible to G2X) (backward compatible to G2X) (new with G2iL) 11.6 G2iL, G2iL+ memory The G2iL, G2iL+ memory is implemented according EPCglobal Class1Gen2 and organized in three sections: Table 8. Name Reserved memory (32 bit ACCESS and 32 bit KILL password) EPC (excluding 16 bit CRC-16 and 16 bit PC) G2iL Configuration Word TID (including permalocked unique 32 bit serial number) G2iL memory sections Size 64 bit 128 bit 16 bit 64 bit Bank 00b 01b 01b 10b The logical address of all memory banks begin at zero (00h). SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 10 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ In addition to the three memory banks one configuration word to handle the G2iL specific features is available at EPC bank 01 address 200h. Memory pages (16 bit words) pre-programmed to zero will not execute an erase cycle before writing data to it. This approach accelerates initialization of the chip and enables faster programming of the memory. 12. Limiting values Table 9. Limiting values[1][2] In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to RFN Symbol Tstg Tamb VESD Parameter storage temperature ambient temperature electrostatic discharge voltage input voltage output current Human body model absolute limits, VDD-OUT pad absolute limits input/output current, VDD-OUT pad maximum power dissipation, RFP pad [3] Conditions Min −55 −40 - Max +125 +85 ±2 Unit °C °C kV Bare die and SOT886 limitations Pad limitations Vi Io −0.5 −0.5 +2.5 +0.5 V mA Pi input power - 100 mW [1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical Characteristics section of this specification is not implied. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima. For ESD measurement, the die chip has been mounted into a CDIP20 package. [2] [3] SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 11 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ 13. Characteristics 13.1 UCODE G2iL, G2iL+ bare die characteristics Table 10. Symbol fi Pi(min) Pi(min) G2iL, G2iL+ RF interface characteristics (RFN, RFP) Parameter input frequency minimum input power minimum input power READ sensitivity WRITE sensitivity, (write range/read range - ratio) parallel 915 MHz 866 MHz 915 MHz 953MHz External supply mode - VDD pad supplied, read range reduction OFF Pi(min) Z minimum input power impedance Ext. supplied READ Ext. supplied WRITE externally supplied, 915 MHz 4R on READ 4R on WRITE Z R impedance resistance 4R on, 915 MHz modulation resistance, max. backscatter = off modulation resistance, max. backscatter = on [1] [2] [3] [4] [5] [6] [7] Power to process a Query command. Measured with a 50 Ω source impedance. At minimum operating power. It has to be assured the reader (system) is capable of providing enough field strength to give +12 dBm at the chip otherwise communication with the chip will not be possible. Enables tag designs to be within ETSI limits for return link data rates of e.g. 320 kHz/M4. Will result in up to 10 dB higher tag backscatter power at high field strength. Results in approx. −18.5 dBm tag sensitivity on a 2 dBi gain antenna. [1][2] [2] [3] [3] [3] [3] [3] [3] [1][2][7] Conditions Min 840 - Typ −18 30 Max 960 - Unit MHz dBm % Normal mode - no external supply, read range reduction OFF Ci Q Z input capacitance quality factor impedance - 0.77 9.7 - pF Ω Ω Ω dBm dBm Ω 25 − j237 23 − j224 21 − j216 −27 −27 7 − j230 - Read range reduction ON - no external supply Pi(min) minimum input power [1][2][4] [2][4] [3] - +12 +12 18 − j2 170 - dBm dBm Ω Ω Modulation resistance [5] [6] - 55 - Ω SL3S1203_1213_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product short data sheet PUBLIC Rev. 3.2 — 9 November 2010 198732 12 of 22 NXP Semiconductors SL3S1203_1213 UCODE G2iL and G2iL+ Table 11. Symbol VDD IDD VDD pin characteristics Parameter input voltage supply current Conditions [1][3][4] Min [2][3][4] Typ 1.8 - Max 1.8 7 110 1.85 1.95 125 265 - Unit V Minimum supply voltage/current - without assisted EEPROM WRITE minimum voltage minimum current, Iout = 0 μA Iout = 100 μA Minimum supply voltage/current - assisted EEPROM READ and WRITE VDD input voltage minimum voltage, Iout = 0 μA Iout = 100 μA IDD supply current minimum current, Iout = 0 μA Iout = 100 μA Maximum supply voltage/current VDD Ii(max) input voltage maximum input current absolute maximum voltage absolute maximum current μA μA V V [3][5] μA μA V 2.2 280 μA [1] [2] [3] [4] [5] Activates Digital Output (OUT pin), increases read range (external supplied). Activates Digital Output (OUT pin), increases read and write range (external supplied). Operating the chip outside the specified voltage range may lead to undefined behaviour.1925. Either the voltage or the current needs to be above given values to guarantee specified functionality. No proper operation is guaranteed if both, voltage and current, limits are exceeded. Table 12. Symbol VOL VOH G2iL, G2iL+ VDD and OUT pin characteristics Parameter Low-level output voltage HIGH-level output voltage Conditions Isink = 1mA VDD = 1.8 V; Isource = −100µA VDD - OUT pin max. maximum RF peak voltage on VDD-OUT pins resistance range high resistance range low [1] [2] Min 1.5 Typ - Max 100 - Unit mV V OUT pin characteristics VDD/OUT pin characteristics CL Vo load capacitance output voltage 5 500 pF mV VDD/OUT pin tamper alarm characteristics RL(max) RL(min) [1] [2] [3] [4] [5] [3] [4] [5] maximum load resistance minimum load resistance >20 -