NXP Semiconductors
Data Sheet: Technical Data
Document Number: MPC5645S
Rev. 14, 08/2020
MPC5645S
416 TEPBGA
27 mm × 27 mm
MPC5645S Microcontroller
Data Sheet
208 LQFP
28 mm × 28 mm
176 LQFP
24 mm × 24 mm
The MPC5645S represents a new generation of 32-bit
microcontrollers targeting single-chip automotive instrument
cluster applications. MPC5645S devices are part of the
MPC56xxS family of Power Architecture®-based devices.
This family has been designed with an emphasis on providing
cost-effective and high quality graphics capabilities in order
to satisfy the increasing market demand for color Thin Film
Transistor (TFT) displays within the vehicle cockpit.
Traditional cluster functions, such as gauge drive, real time
counter, and sound generation are also integrated on each
device.
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2
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4
Devices in the MPC56xxS family contain between 256 KB
and 2 MB internal flash memory. The family allows for easy
expansion and covers a broad range of cluster applications
from low to high-end enabling users to design a complete
platform around one common architecture. Serial flash
memory and DRAM interfaces are provided to allow even
greater system flexibility.
The MPC5645S is designed to reduce development and
production costs of TFT-based instrument cluster displays by
providing a single-chip solution with the processing and
storage capacity to host and execute real-time application
software and drive TFT displays directly.
The MPC5645S features a 2D OpenVG graphics accelerator,
Video Input Unit (VIU2) and two on-chip display control
units (DCU3 and DCULite) designed to drive two color TFT
displays simultaneously. The MPC5645S includes an
enhanced QuadSPI Serial Flash Controller and an optional
DRAM controller allowing graphics RAM expansion
externally.
The MPC5645S is compatible with the existing development
infrastructure of current Power Architecture devices and are
supported with software drivers, operating systems and
configuration code to assist with application development.
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Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1 Device comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.2 Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.3 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.4 Feature details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pinout and signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . 24
2.1 176 LQFP package pinout . . . . . . . . . . . . . . . . . . . . . . 24
2.2 208 LQFP package pinout . . . . . . . . . . . . . . . . . . . . . . 25
2.3 416 TEPBGA package pinout. . . . . . . . . . . . . . . . . . . . 26
2.4 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
System design information. . . . . . . . . . . . . . . . . . . . . . . . . . . 60
3.1 Power-up sequencing . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
4.1 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
4.2 Parameter classification . . . . . . . . . . . . . . . . . . . . . . . . 61
4.3 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . 61
4.4 Recommended operating conditions . . . . . . . . . . . . . . 62
4.5 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . 64
4.6 EMI (electromagnetic interference) characteristics . . . 69
4.7 Power management . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
4.8 DC electrical specifications . . . . . . . . . . . . . . . . . . . . . 74
4.9 SSD Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
4.10 RESET electrical characteristics . . . . . . . . . . . . . . . . . 84
4.11 Fast external crystal oscillator (4–16 MHz) electrical
characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
4.12 Slow external crystal oscillator (32 KHz) electrical
characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
4.13 FMPLL electrical characteristics. . . . . . . . . . . . . . . . . . 89
4.14 Fast internal RC oscillator (16 MHz) electrical
characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
4.15 Slow internal RC oscillator (128 kHz) electrical
characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
4.16 Flash memory electrical characteristics . . . . . . . . . . . . 91
4.17 ADC parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
4.18 AC specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
4.19 AC timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 135
5.1 176 LQFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
5.2 208 LQFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
5.3 416 TEPBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
NXP reserves the right to change the production detail specifications as may be
required to permit improvements in the design of its products.
1
Overview
1.1
Device comparison
Table 1. MPC5645S device comparison
Feature
Package
MPC5645S
208 LQFP
176 LQFP
CPU
416 TEPBGA
e200z4d
4 KB Instruction-Cache
16-entry Memory Management Unit (MMU)
Floating Point Unit (FPU)
Signal Processing Extension (SPE)
Execution speed
Static–125 MHz
Flash memory (ECC)
2 MB
RAM (ECC)
64 KB
On-chip graphics RAM (no ECC)
1 MB
MPU
16 entry
eDMA
16 channels
DRAM controller
No
OpenVG Graphics Accelerator
(GFX2D)
Yes
Yes (OpenVG 1.1)
Display Control Unit (DCU3)
Yes
Display Control Unit Lite (DCULite)
No
Yes
Timing Controller (TCON) and RSDS
interface
No
Yes
Video Input Unit (VIU2)
Yes
QuadSPI serial flash interface
Yes
Stepper Motor Controller (SMC)
4 motors
6 motors
Stepper Stall Detect (SSD)
Yes
Sound Generator Module (SGM)
Yes
32 kHz external crystal oscillator
Yes
Real Time Counter and Autonomous
Periodic Interrupt (RTC/API)
Yes
Periodic interrupt timer (PIT)
8 ch, 32-bit
Software Watchdog Timer (SWT)
Yes
System Timer Module (STM)
4 ch, 32-bit
Timed I/O1
Analog-to-Digital Converter (ADC)2
20 ch, 16-bit: IC / OC / OPWM
8 ch, 16-bit: IC / OC
4 ch, 16-bit: IC / OC / OPWM / QDEC
16 channels, 10-bit
20 channels, 10-bit
MPC5645S Microcontroller Data Sheet, Rev. 14
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NXP Semiconductors
Table 1. MPC5645S device comparison (continued)
Feature
Package
MPC5645S
176 LQFP
CAN (64 mailboxes)
208 LQFP
3 × FlexCAN
CAN sampler
Serial communication interface
SPI
Yes
3 × LINFlex
4 × LINFlex
2 × DSPI
3 × DSPI
2
I C
GPIO
Debug
416 TEPBGA
4
128
150
Nexus Class 3 (4×MDO)4
1773
Nexus Class 3 (12×MDO)
1
IC-Input Capture, OC-Output Compare, OPWM-Output Pulse Width Modulation, QDEC- Quadrature Decode Mode
Support for external multiplexer enabling up to 8 channels
3 The 416-pin GPIO count does not include the DRAM interface, which is dedicated to DRAM only.
4 Nexus pins are multiplexed with other functional pins on 176 LQFP and 208 LQFP package options.
2
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
3
1.2
Block diagram
System
integration
Debug
Crossbar switch masters
JTAG
e200z4d
VReg
Nexus 3+
GFX2D
Oscillator
DCULite
TCON / RSDS
MMU
FMPLL 0
I-CACHE
VIU2
FMPLL 1
DCU3
eDMA
RTC/32Kosc
INTC
Crossbar Switch
Memory Protection Unit
PIT
STM
Flash
memory
SRAM
Graphics
SRAM
2 MB
64 KB
1 MB
PBRIDGE
QuadSPI
DRAM interface
SWT
EEE
RLE decoder
Crossbar switch slaves
BAM
ADC
BAM
eDMA
DCU3
DCULite
DSPI
eMIOS
FlexCAN
FMPLL
GFX2D
INTC
JTAG
MMU
QuadSPI
SMC 5
SMC 4
SMC 3
SMC 2
SMC 1
SMC 0
ADC
SGM
I2C 3
I2C 2
I2C 1
I2C 0
DSPI 2
DSPI 1
DSPI 0
LINFlex 3
LINFlex 2
LINFlex 1
LINFlex 0
FlexCAN 2
FlexCAN 1
FlexCAN 0
eMIOS 1
eMIOS 0
Communication I/O system
SSD
– Analog-to-Digital Converter
– Boot Assist Module
– Enhanced Direct Memory Access Controller
– Display Control Unit
– Display Control Unit Lite
– Serial Peripherals Interface
– Enhanced Modular Input/Output System
– Controller Area Network Controller
– Frequency-Modulated Phase-Locked Loop
– OpenVG Graphics Accelerator
– Interrupt Controller
– Joint Test Action Group interface
– Memory Management Unit
– Quad IO serial flash interface
PBRIDGE
PIT
RLE
RSDS
RTC
SGM
SMC
SSD
STM
SWT
TCON
VIU2
VReg
– Peripheral Bridge
– Periodic Interrupt Timer
– Run Length Encoding
– Reduced-Swing Differential Signal interface
– Real Time Clock
– Sound Generator Module
– Stepper Motor Controller
– Stepper Stall Detect
– System Timer Module
– Software Watchdog Timer
– Timing Controller
– Video Input Unit
– Voltage regulator
Figure 1. MPC5645S block diagram
MPC5645S Microcontroller Data Sheet, Rev. 14
4
NXP Semiconductors
1.3
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Feature list
Dual-issue, 32-bit Power Architecture Book E compliant CPU core complex (e200z4d)
— Memory Management Unit (MMU)
— 4 KB, 2/4-way instruction cache
2 MB on-chip ECC flash memory with:
— Flash memory controller
— Prefetch buffers
64 KB on-chip ECC SRAM
1 MB on-chip non-ECC graphics SRAM with two-port graphics SRAM controller
Memory Protection Unit (MPU) with up to 16 region descriptors and 32-byte region granularity to provide basic
memory access permission and ensure separation between different codes and data
Interrupt Controller (INTC) with 163 peripheral interrupt sources and eight software interrupts
Two Frequency-Modulated Phase-Locked Loops (FMPLLs)
— Primary FMPLL (FMPLL0) provides a system clock up to 125 MHz
— Auxiliary FMPLL (FMPLL1) is available for use as an alternate, modulated or non-modulated clock source to
eMIOS modules, QuadSPI and as alternate clock to the DCU and DCU-Lite for pixel clock generation
Crossbar switch architecture enables concurrent access of peripherals, flash memory or RAM from multiple bus
masters
16-channel Enhanced Direct Memory Access controller (eDMA) with multiple transfer request sources using a DMA
channel multiplexer
Boot Assist Module (BAM) with 8 KB dedicated ROM for embedded boot code supports boot options including
download of boot code via a serial link (CAN or SCI)
Two Display Control Units (DCU3 and DCULite) for direct drive of up to two TFT LCD displays up to XGA
resolution
Timing Controller (TCON) and RSDS interface for the DCU3 module
2D OpenVG 1.1 and raster graphics accelerator (GFX2D)
Video Input Unit (VIU2) supporting 8/10-bit ITU656 video input, YUV to RGB conversion, video down-scaling,
de-interlacing, contrast adjustment and brightness adjustment.
DRAM controller supporting DDR1, DDR2, and LPDDR1 DRAMs
Stepper Motor Controller (SMC)
— High-current drivers for up to six instrument cluster gauges driven in full dual H-bridge configuration
— Stepper motor return-to-zero and stall detection module
— Stepper motor short circuit detection
Sound Generator Module (SGM)
— 4-channel mixer
— Supports PCM wave playback and synthesized tones
— Optional PWM or I2S outputs
Two 16-channel Enhanced Modular Input Output System (eMIOS) modules
— Support a range of 16-bit Input Capture, Output Compare, Pulse Width Modulation and Quadrature Decode
functions
10-bit Analog-to-Digital Converter (ADC) with a maximum conversion time of 1 μs
— Up to 20 internal channels
— Up to 8 external channels
Three Deserial Serial Peripheral Interface (DSPI) modules for full-duplex, synchronous, communications with
external devices
QuadSPI serial flash memory controller
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
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— Supports single, dual and quad IO serial flash memory
— Interfaces to external, memory-mapped serial flash memories
— Supports simultaneous addressing of 2 external serial flashes to achieve up 80 MB/s read bandwidth
RLE decoder supporting memory to memory decoding of RLE data in conjunction with eDMA
Four local interconnect network (LINFlex) controller modules
— Capable of autonomous message handling (master), autonomous header handling (slave mode), and UART
support
— Compliant with LIN protocol rev 2.1
Three controller-area network (FlexCAN) modules
— Compliant with the CAN protocol version 2.0 C
— 64 configurable buffers
— Programmable bit rate of up to 1 Mb/s
Four Inter-Integrated Circuit (I2C) internal bus controllers with master/slave bus interface
Low-power loop controlled pierce crystal oscillator supporting 4–16MHz external crystal or resonator
Real Time Counter (RTC) with clock source from internal 128 kHz or 16 MHz oscillator supporting autonomous
wake-up with 1 ms resolution with maximum timeout of 2 seconds
— Support for real time counter (RTC) with clock source from external 32 KHz crystal oscillator, supporting
wake-up with 1 s resolution and maximum timeout of one hour
— RTC optionally clocked by fast 4–16 MHz external oscillator
System timers:
— Four-channel 32-bit System Timer Module (STM)
— Eight-channel 32-bit Periodic Interrupt Timer (PIT) module (including ADC trigger)
— Software Watchdog Timer (SWT)
System Integration Unit Lite (SIUL) module to manage external interrupts, GPIO and pad control
System Status and Configuration Module (SSCM)
— Provides information for identification of the device, last boot mode, or debug status
— Provides an entry point for the censorship password mechanism
Clock Generation Module (MC_CGM) to generate system clock sources and provide a unified register interface,
enabling access to all clock sources
Clock Monitor Unit (CMU)
— Monitors the integrity of the fast (4–16 MHz) external crystal oscillator and the primary FMPLL (FMPLL0)
— Acts as a frequency meter, measuring the frequency of one clock source and comparing it to a reference clock
Mode Entry Module (MC_ME)
— Controls the device power mode, i.e., RUN, HALT, STOP, or STANDBY
— Controls mode transition sequences
— Manages the power control, voltage regulator, clock generation and clock management modules
Power Control Unit (MC_PCU) to implement standby mode entry/exit and control connections to power domains
Reset Generation Module (MC_RGM) to manage reset assertion and release to the device at initial power-up
Nexus Development Interface (NDI) per IEEE-ISTO 5001-2008 Class 3 standard with additional Class 4 features:
— Watchpoint Triggering
— Processor Overrun Control
Device/board boundary-scan testing supported per Joint Test Action Group (JTAG) of IEEE (IEEE 1149.1)
On-chip voltage regulator controller for regulating the 3.3–5 V supply voltage down to 1.2 V for core logic (requires
external ballast transistor)
Package:1
— 176 LQFP, 0.5 mm pitch, 24 mm × 24 mm outline
MPC5645S Microcontroller Data Sheet, Rev. 14
6
NXP Semiconductors
— 208 LQFP, 0.5 mm pitch, 28 mm × 28 mm outline
— 416 TEPBGA, 1mm ball pitch, 27 mm × 27 mm outline
1.4
1.4.1
Feature details
Low-power operation
The MPC5645S is designed for optimized low-power operation and dynamic power management of the CPU and peripherals.
Power management features include software-controlled clock gating of peripherals and multiple power domains to minimize
leakage in low-power modes.
There are three low-power modes:
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STANDBY
STOP
HALT
and five dynamic power modes — RUN[0..3] and DRUN. All low-power modes use clock gating to halt the clock for all or part
of the device.
STANDBY mode turns off the power to the majority of the chip to offer the lowest power consumption mode.
The device can be awakened from STANDBY mode via from any of up to 23 I/O pins, a reset or from a periodic wake-up using
a low power oscillator. If required, it is possible to enable the internal 16 MHz oscillator, the external 4–16 MHz oscillator, and
the external 32 KHz oscillator.
In STANDBY mode the contents of the CPU, on-chip peripheral registers, and potentially some of the volatile memory are lost.
The two possible configurations in STANDBY mode are:
•
•
The device retains 64 KB of the on-chip SRAM, but the content of the graphics SRAM is lost.
The device retains 8 KB of the on-chip SRAM, but the content of the graphics SRAM is lost.
STOP mode maintains power to the entire device allowing the retention of all on-chip registers and memory, and providing a
faster recovery low power mode than the lowest-power STANDBY mode. There is no need to reconfigure the device before
executing code. The clocks to the CPU and peripherals are halted and can be optionally stopped to the oscillator or PLL at the
expense of a slower start-up time.
STOP is entered from RUN mode only. Wake-up from STOP mode is triggered by an external event or by the internal periodic
wake-up, if enabled.
RUN modes are the main operating modes where the entire device can be powered and clocked and from which most processing
activity is done. Four dynamic RUN modes are supported—RUN0 - RUN3. The ability to configure and select different RUN
modes enables different clocks and power configurations to be supported with respect to each other and to allow switching
between different operating conditions. The necessary peripherals, clock sources, clock speed, and system clock prescalers can
be independently configured for each of the four RUN modes of the device.
HALT mode is a reduced activity, low power mode intended for moderate periods of lower processing activity. In this mode the
CPU system clocks are stopped but user-selected peripheral tasks can continue to run. It can be configured to provide more
efficient power management features (switch-off PLL, flash memory, main regulator, etc.) at the cost of longer wake up latency.
The system returns to RUN mode as soon as an event or interrupt is pending.
The following table summarizes the operating modes of the MPC5645S.
1. See the device comparison table for package offerings for each device in the family.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
7
Table 2. Operating mode summary
Mode switch over
S/W Reconfig
PLL Lock
OSC Stabilization
IRC Wake-up
VREG start-up
VREG mode
Wake-up input
Periodic Wake-up
32KHz X OSC
128KHz IRC
4-16MHz OSC
16MHz IRC
Auxiliary PLL
Primary PLL
Flash Recovery
Wake-up time1
Clock sources
Graphics RAM
SRAM
Flash
Peripherals
CPU
GFX accelerator
DRAM controller
Operating mode
SoC features
RUN
On
OP OP OP2 On
OP OP On
OP On
OP —
FP
—
—
—
—
—
—
—
HALT
CG
OP OP OP2 On
OP OP On
OP On
OP OP OP FP
—
—
—
—
—
—
30 µs 3
STOP
CG
CG CG OP2 CG CG CG OP OP On
OP OP OP LP
350 µs 4 µs 20 µs
1 ms 200 µs —
30 µs 3
STAND
BY
Off
Off
Off
64K Off
—
Off
Off
OP OP On
OP OP OP LP
350 µs 8 µs 100 µs 1 ms 200 µs Var 28 µs
Off
Off
OP OP On
OP OP OP LP
200 µs 8 µs 100 µs 1 ms 200 µs Var 28 µs
4
Off
Off
Off
8K5 Off
POR
500 µs 8 µs 100 µs 1 ms 200 µs
BAM6
Table key:
• On — Powered and clocked
• OP — Optionally configurable to be enabled or disabled (clock gated)
• CG — Clock Gated, Powered but clock stopped
• Off — Powered off and clock gated
• FP — VREG Full Performance mode
• LP — VREG Low Power mode, reduced output capability of VREG but lower power consumption
• Var — Variable duration, based on the required reconfiguration and execution clock speed
• BAM — Boot Assist Module Software and Hardware used for device start-up and configuration
1
A high level summary of some key durations that need to be considered when recovering from low power modes. This does
not account for all durations at wake up. Other delays will be necessary to consider including, but not limited to the external
supply start-up time.
IRC Wake-up time must not be added to the overall wake-up time as it starts in parallel with the VREG.
All other wake-up times must be added to determine the total start-up time.
Either 64 KB or 8 KB available.
Flash configured in disabled mode.
64 KB of the RAM contents is retained, but not accessible in STANDBY mode.
8 KB of the RAM contents is retained, but not accessible in STANDBY mode.
Dependent on boot option after reset.
2
3
4
5
6
Additional notes on low power operation:
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Fast wake-up using the on-chip 16 MHz internal RC oscillator allows rapid execution from RAM on exit from low
power modes
The 16 MHz internal RC oscillator supports low speed code execution and clocking of peripherals when it is selected
as the system clock and can also be used as the PLL input clock source to provide fast start-up without the external
oscillator delay
The device includes an internal voltage regulator that includes the following features:
— Regulates input to generate all internal supplies
— Manages power gating
— External ballast transistor for high power regulator
MPC5645S Microcontroller Data Sheet, Rev. 14
8
NXP Semiconductors
— Low-Power and Ultra-Low-Power regulators support operation when in STOP and STANDBY modes,
respectively, to minimize power consumption
— Startup on-chip regulators in 1 hour period
— 1 ms resolution for 2 second period
MPC5645S Microcontroller Data Sheet, Rev. 14
20
NXP Semiconductors
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Selectable clock sources from external 32 KHz crystal, external 4–16 MHz crystal, internal 128 kHz RC oscillator or
divided internal 16 MHz RC oscillator
1.4.29
System Timer Module (STM)
The STM is a 32-bit timer designed to support commonly required system and application software timing functions. The STM
includes a 32-bit up counter and four 32-bit compare channels with a separate interrupt source for each channel. The counter is
driven by the system clock divided by an 8-bit prescale value (1 to 256).
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One 32-bit up counter with 8-bit prescaler
Four 32-bit compare channels
Independent interrupt source for each channel
Counter can be stopped in debug mode
1.4.30
Software Watchdog Timer (SWT)
The SWT features the following:
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Watchdog supporting software activation or enabled out of Reset
Supports normal or windowed mode
Watchdog timer value writable once after reset
Watchdog supports optional halting during low power modes
Configurable response on timeout: reset, interrupt, or interrupt followed by reset
Clock source: 128 kHz RC oscillator
1.4.31
Stepper Motor Controller (SMC)
The SMC module is a PWM motor controller suitable to drive instruments in a cluster configuration or any other loads requiring
a PWM signal. The motor controller has twelve PWM channels associated with two pins each (24 pins in total) driving up to 6
stepper motors.
The SMC module includes the following features:
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10/11-bit PWM counter
11-bit resolution with selectable PWM dithering function
Left, right, or center aligned PWM
Output slew rate control
Output Short Circuit Detection
This module is suited for, but not limited to, driving small stepper and air core motors used in instrumentation applications. This
module can be used for other motor control or PWM applications that match the frequency, resolution, and output drive
capabilities of the module.
1.4.32
Stepper Stall Detect (SSD)
The SSD module provides a circuit to measure and integrate the induced voltage on the non-driven coil of a stepper motor using
full steps when the gauge pointer is returning to zero (RTZ).
The SSD module features the following:
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Programmable full step state
Programmable integration polarity
Blanking (recirculation) state
16-bit integration accumulator register
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
21
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16-bit modulus down counter with interrupt
1.4.33
Sound Generator Module (SGM)
The SGM features the following:
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4-channel audio mixer
Each channel capable of independent Tone generation or Wave playback
Individual channel volume control (8-bit resolution)
Tone Mode:
— Programmable Tone frequency
— Programmable amplitude envelope: attack, duration, and decay
— Programmable number of tone pulses and inter-tone duration
Wave Mode:
— One FIFO per channel working in conjunction with eDMA
— Supports standard audio sampling rates (4 kHz, 8 kHz, 11.025 kHz, 16 kHz, 22.050 kHz, 32 kHz, 44.100 kHz,
48 kHz)
— Same sample rate applies to all channels
— 8-bit, 12-bit, 16-bit input data formats
— Programmable wave duration and inter-wave duration
— Repeat mode with programmable number of wave playbacks
SGM Output:
— 16-bit PWM channel
— Integrated I2S master interface for connection to external audio DAC
1.4.34
IEEE 1149.1 JTAG controller (JTAGC)
JTAGC features the following:
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Backward compatible to standard JTAG IEEE 1149.1-2001 test access port (TAP) interface
Support for boundary scan testing
1.4.35
Nexus Development Interface (NDI)
The Nexus 3 module is compliant with Class 3 of the IEEE-ISTO 5001-2008 standard, with additional Class 4 features
available. The following features are implemented:
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Program Trace via Branch Trace Messaging (BTM). Branch trace messaging displays program flow discontinuities
(direct and indirect branches, exceptions, etc.), allowing the development tool to interpolate what transpires between
the discontinuities. Thus static code may be traced.
Data Trace via Data Write Messaging (DWM) and Data Read Messaging (DRM). This provides the capability for the
development tool to trace reads and/or writes to selected internal memory resources.
Ownership Trace via Ownership Trace Messaging (OTM). OTM facilitates ownership trace by providing visibility of
which process ID or operating system task is activated. An Ownership Trace Message is transmitted when a new
process/task is activated, allowing the development tool to trace ownership flow.
Run-time access to embedded processor memory map via the JTAG port. This allows for enhanced download/upload
capabilities.
Watchpoint Messaging via the auxiliary pins provides visibility when debugging.
Watchpoint Trigger enablement of Program and/or Data Trace Messaging enhances debug capability.
MPC5645S Microcontroller Data Sheet, Rev. 14
22
NXP Semiconductors
•
•
•
•
•
•
Data Acquisition Messaging (DQM) allows code to be instrumented to export customized information to the Nexus
Auxiliary Output Port.
Address Translation Messaging via program correlation messages displays updates to the TLB for use by the debugger
in correlating virtual and physical address information.
Auxiliary interface for higher data input/output.
Registers for Program Trace, Data Trace, Ownership Trace, and Watchpoint Trigger.
All features are controllable and configurable via the JTAG port.
Nexus Auxiliary port is supported on the 416BGA package.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
23
2
Pinout and signal descriptions
2.1
176 LQFP package pinout
176
175
174
173
172
171
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169
168
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166
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160
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158
157
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149
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147
146
145
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143
142
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140
139
138
137
136
135
134
133
VSS
VDD12
PF15 / QSPI_CLK_0 / CLKOUT / MCKO
PF14 / QSPI_IO1_0 / MDO3
PF13 / QSPI_IO0_0 / MDO2
PF12 / QSPI_IO3_0 / MDO1
PF11 / QSPI_IO2_0 / MDO0
PF10 / QSPI_PCS_0 / EVTI
PG12 / CS0_1 / PDI_DE
VSS
VDDE_B
PF9 / SCL_0 / CS1_1 / TXD_1
PF8 / SDA_0 / CS2_1 / RXD_1
PF7 / eMIOS1[15] / SCL_1
PF6 / QSPI_IO0_1 / eMIOS1[16] / PDI17_VIU9
PF5 / QSPI_IO1_1 / eMIOS1[15] / PDI16_VIU8
PF4 / eMIOS1[14] / SDA_1
PF3 / eMIOS1[21] / MSEO2
PF1 / eMIOS1[20] / MSEO
PF0 / eMIOS1[19] / EVTO
PK1 / QSPI_IO2_1 / eMIOS1[14] / PDI15_VIU7
PK0 / eMIOS1[18]
VSS
PB2 / TXD_0
PB3 / RXD_0
PJ15 / QSPI_IO3_1 / eMIOS1[9] / PDI14_VIU6
PJ14 / QSPI_CLK_1 / eMIOS1[17] / PDI_PCLK
PJ13 / QSPI_PCS_1 / eMIOS1[8] / PDI13_VIU5
PJ12 / DCU_TAG
PG11 / DCU_PCLK
PG7 / DCU_B7
PG6 / DCU_B6
PG5 / DCU_B5
PG4 / DCU_B4
PG3 / DCU_B3
PG2 / DCU_B2
VDDE_B
VSS
VDD12
PG1 / DCU_B1 / SDA_3 / eMIOS0[22]
PG0 / DCU_B0 / SCL_3 / eMIOS0[21]
PA15 / DCU_G7
PA14 / DCU_G6
VSS
Figure 2 shows the pinout for the 176-pin LQFP package.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
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17
18
19
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23
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44
MPC5645S
176 LQFP
Top view
132
131
130
129
128
127
126
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124
123
122
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120
119
118
117
116
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105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
VDDE_B
PA13 / DCU_G5
PA12 / DCU_G4
PA11 / DCU_G3
PA10 / DCU_G2
PA9 / DCU_G1 / SDA_2 / eMIOS0[19]
PA8 / DCU_G0 / SCL_2 / eMIOS0[20]
PA7 / DCU_R7
PA6 / DCU_R6
VSS
VDDE_B
PA5 / DCU_R5
PA4 / DCU_R4
PA3 / DCU_R3
PA2 / DCU_R2
PA1 / DCU_R1 / SCL_1 / eMIOS0[17]
PA0 / DCU_R0 / SDA_1 / eMIOS0[18]
PM11 / TXD_2 / CNTX_2 / eMIOS0[23]
PM10 / RXD_2 / CNRX_2 / eMIOS0[16]
PM9/ PDI_PCLK/ SGM_MCLK/ eMIOS0[8]
VDDE_B
VSS
VDD12
PD15 / M3C1P / SSD3_3 / eMIOS0[15]
PD14 / M3C1M / SSD3_2 / eMIOS0[14]
PD13 / M3C0P / SSD3_1 / eMIOS0[13]
PD12 / M3C0M / SSD3_0 / eMIOS0[12]
VSSM
VDDM
PD11 / M2C1P / SSD2_3 / eMIOS0[11]
PD10 / M2C1M / SSD2_3 / eMIOS0[10]
PD9 / M2C0P / SSD2_1 / eMIOS0[9]
PD8 / M2C0M / SSD2_0
PD7 / M1C1P / SSD1_3
PD6 / M1C1M / SSD1_2 / eMIOS0[23]
PD5 / M1C0P / SSD1_1 / eMIOS0[16]
PD4 / M1C0M / SSD1_0 / eMIOS0[8]
VSSM
VDDM
PD3 / M0C1P / SSD0_3 / eMIOS0[9]
PD2 / M0C1M / SSD0_2 / eMIOS1[23]
PD1 / M0C0P / SSD0_1 / eMIOS1[16]
PD0 / M0C0M / SSD0_0 / eMIOS1[8]
VDDE_B
Note: Functions in bold are
available only on this package.
NMI / PF2
CS2_0 / eMIOS1[10] / RXD_1 / PB12
CS1_0 / eMIOS1[11] / TXD_1 / PB13
VDDE_B
VSS
VDD12
eMIOS1[12] / SDA_1 / PK10
DCU_TAG / eMIOS1[13] / SCL_1 / PK11
I2S_FS / eMIOS1[18] / SCK_0 / PB9
I2S_DO / eMIOS1[19] / SOUT_0 / PB8
I2S_SCK / eMIOS1[20] / SIN_0 / PB7
eMIOS0[23] / eMIOS0[21] / PDI0_VIU2 / PJ4
eMIOS0[16] / eMIOS0[20] / PDI1_VIU3 / PJ5
eMIOS0[15] / eMIOS0[19] / PDI2_VIU4 / PJ6
eMIOS0[14] / eMIOS0[18] / PDI3_VIU5 / PJ7
PDI_DE / eMIOS0[22] / VIU_PCLK / PJ3
eMIOS1[21] / CS0_0 / PH4
MA0 / SCK_1 / PB4
FABM / MA1 / SOUT_1 / PB5
ABS[0] / MA2 / SIN_1 / PB6
VDDE_B
VSS
VDD12
VSS
XTAL32 / AN15 / PC15
EXTAL32 / AN14 / PC14
CS0_1 / MA2 / AN13 / PC13
CS1_1 / MA1 / AN12 / PC12
CS2_1 / MA0 / AN11 / PC11
I2S_DO / AN10_MUX / PC10
AN9 / PC9
AN8 / PC8
VDDE_A
VSSE_A
VDDA
VSSA
AN7 / PC7
AN6 / PC6
AN5 / PC5
AN4 / PC4
AN3 / PC3
AN2 / PC2
AN1 / PC1
AN0 / PC0
45
46
47
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71
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75
76
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78
79
80
81
82
83
84
85
86
87
88
DCU_VSYNC / PG8
DCU_HSYNC / PG9
DCU_DE / PG10
eMIOS0[8] / eMIOS1[9] / PDI_HSYNC_VIU1 / PJ1
eMIOS0[9] / eMIOS1[14] / PDI_VSYNC_VIU0 / PJ2
VDDE_B
VSS
eMIOS0[13] / eMIOS0[17] / PDI4_VIU6 / PJ8
eMIOS0[12] / eMIOS1[22] / PDI5_VIU7 / PJ9
eMIOS0[11] / eMIOS1[17] / PDI6_VIU8 / PJ10
eMIOS0[10] / eMIOS1[15] / PDI7_VIU9 / PJ11
RXD_0 / CNRX_0 / PB1
TXD_0 / CNTX_0 / PB0
I2S_DO / CNRX_1 / PB10
SGM_MCLK / CNTX_1 / PB11
DCU_TAG / eMIOS1[22] / PDI13_VIU5 / PM5
eMIOS1[23] / PDI14_VIU6 / PM6
VSS
VDDE_B
VDDR
VSSR
VSUP_TEST
VDD12
VSS
VDDPLL
VREG_BYPASS
EXTAL
XTAL
VRC_CTRL
RESET
eMIOS1[10] / PDI8_VIU0 / PK2
eMIOS1[11] / PDI9_VIU1 / PK3
eMIOS1[12] / PDI10_VIU2 / PK4
eMIOS1[13] / PDI11_VIU3 / PK5
eMIOS1[9] / PDI12_VIU4 / PK6
VSS
VDDE_B
eMIOS1[8] / I2S_FS / PDI15_VIU7 / PH5
eMIOS1[16] / I2S_DO / PDI16_VIU8 / PM7
eMIOS1[23] / I2S_SCK / PDI17_VIU9 / PM8
TCK / PH0
TDI / PH1
TDO / PH2
TMS / PH3
Figure 2. 176-pin LQFP pinout
MPC5645S Microcontroller Data Sheet, Rev. 14
24
NXP Semiconductors
2.2
208 LQFP package pinout
208
207
206
205
204
203
202
201
200
199
198
197
196
195
194
193
192
191
190
189
188
187
186
185
184
183
182
181
180
179
178
177
176
175
174
173
172
171
170
169
168
167
166
165
164
163
162
161
160
159
158
157
VSS
VDD12
PF15 / QSPI_CLK_0 / CLKOUT / MCKO
PF14 / QSPI_IO1_0 / MDO3
PF13 / QSPI_IO0_0 / MDO2
PF12 / QSPI_IO3_0 / MDO1
PF11 / QSPI_IO2_0 / MDO0
PF10 / QSPI_PCS_0 / EVTI
PG12 / CS0_1 / PDI_DE / DCULITE_B7
VSS
VDDE_B
PF9 / SCL_0 / CS1_1 / TXD_1
PF8 / SDA_0 / CS2_1 / RXD_1
PF7 / eMIOS1[15] / SCL_1 / DCULITE_B6
PF6 / QSPI_IO0_1 / eMIOS1[16] / PDI17_VIU9
PF5 / QSPI_IO1_1 / eMIOS1[15] / PDI16_VIU8
PF4 / eMIOS1[14] / SDA_1 / DCULITE_B5
PF3 / eMIOS1[21] / MSEO2 / DCULITE_B4
PF1 / eMIOS1[20] / MSEO / DCULITE_B3
PF0 / eMIOS1[19] / EVTO / DCULITE_B2
PK1 / QSPI_IO2_1 / eMIOS1[14] / PDI15_VIU7
PK0 / eMIOS1[18] / DCULITE_G7
VDD12
VSS
VDDE_B
PB2 / TXD_0
PB3 / RXD_0
PJ15 / QSPI_IO3_1 / eMIOS1[9] / PDI14_VIU6
PJ14 / QSPI_CLK_1 / eMIOS1[17] / PDI_PCLK
PJ13 / QSPI_PCS_1 / eMIOS1[8] / PDI13_VIU5
PJ12 / DCU_TAG_TCON0 / DCULITE_G6
PL13 / eMIOS1[13] / DCULITE_G5
PL12 / eMIOS1[12] / DCULITE_G4
PL11 / eMIOS1[11] / DCULITE_G3
PL10 / eMIOS1[10] / DCULITE_G2
PM2 / eMIOS1[17] / DCULITE_R7/DCULITE_DE/RSDSLCKM
PG11 / DCU_PCLK / RSDSLCKP
PG7/ DCU_B7 / RSDS11M
PG6 / DCU_B6 / RSDS11P
PG5 / DCU_B5 / RSDS10M
PG4 / DCU_B4 / RSDS10P
PG3 / DCU_B3 / RSDS9M
PG2 / DCU_B2 / RSDS9P
VREF_RSDS
VDDE_B
VSS
VDD12
PG1 / DCU_B1 / SDA_3 / eMIOS0[22] / RSDS8M
PG0 / DCU_B0 / SCL_3 / eMIOS0[21] / RSDS8P
PA15 / DCU_G7 / RSDS7M
PA14 / DCU_G6 / RSDS7P
VSS
Figure 3 shows the pinout for the 208-pin LQFP package.
MPC5645S
208 LQFP
Top view
53
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104
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2
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7
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52
156
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150
149
148
147
146
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144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
120
119
118
117
116
115
114
113
112
111
110
109
108
107
106
105
VDDE_B
PA13 / DCU_G5 / RSDS6M
PA12 / DCU_G4 / RSDS6P
PA11 / DCU_G3 / RSDS5M
PA10 / DCU_G2 / RSDS5P
PA9 / DCU_G1 / SDA_2 / eMIOS0[19] / RSDS4M
PA8 / DCU_G0 / SCL_2 / eMIOS0[20] / RSDS4P
PA7 / DCU_R7 / RSDS3M
PA6 / DCU_R6 / RSDS3P
VSS
VDDE_B
VREF_RSDS
PA5 / DCU_R5 / RSDS2M
PA4 / DCU_R4 / RSDS2P
PA3 / DCU_R3 / RSRS1M
PA2 / DCU_R2 / RSDS1P
PA1 / DCU_R1 / SCL_1 / eMIOS0[17] / RSDS0M
PA0 / DCU_R0 / SDA_1 / eMIOS0[18] / RSDS0P
VDDE_B
VSS
VDD12
PE7 / M5C1P / SSD5_3
PE6 / M5C1M / SSD5_2
PE5 / M5C0P / SSD5_1
PE4 / M5C0M / SSD5_0
VSSM
VDDM
PE3 / M4C1P / SSD4_3
PE2 / M4C1M / SSD4_2
PE1 / M4C0P / SSD4_1
PE0 / M4C0M / SSD4_0
PD15 / M3C1P / SSD3_3 / eMIOS0[15]
PD14 / M3C1M / SSD3_2 / eMIOS0[14]
PD13 / M3C0P / SSD3_1 / eMIOS0[13]
PD12 / M3C0M / SSD3_0 / eMIOS0[12]
VSSM
VDDM
PD11 / M2C1P / SSD2_3 / eMIOS0[11]
PD10 / M2C1M / SSD2_2 / eMIOS0[10]
PD9 / M2C0P / SSD2_1 / eMIOS0[9]
PD8 / M2C0M / SSD2_0
PD7 / M1C1P / SSD1_3
PD6 / M1C1M / SSD1_2 / eMIOS0[23]
PD5 / M1C0P / SSD1_1 / eMIOS0[16]
PD4 / M1C0M / SSD1_0 / eMIOS0[8]
VSSM
VDDM
PD3 / M0C1P / SSD0_3 / eMIOS0[9]
PD2 / M0C1M / SSD0_2 / eMIOS1[23]
PD1 / M0C0P / SSD0_1 / eMIOS1[16]
PD0 / M0C0M / SSD0_0 / eMIOS1[8]
VDDE_B
NMI / PF2
CS2_0 / eMIOS1[10] / RXD_1 / PB12
CS1_0 / eMIOS1[11] / TXD_1 / PB13
VDDE_B
VSS
VDD12
DCULITE_TAG / eMIOS1[12] / SDA_1 / PK10
DCU_TAG / eMIOS1[13] / SCL_1 / PK11
TCON11 / DCULITE_R5 / I2S_SCK/ PM0
DCULITE_R6 / I2S_FS / PM1
VDDE_B
VSS
I2S_FS / eMIOS1[18] / SCK_0 / PB9
I2S_DO / eMIOS1[19] / SOUT_0 / PB8
I2S_SCK / eMIOS1[20] / SIN_0 / PB7
eMIOS0[23] / eMIOS0[21] / PDI0_VIU2 / PJ4
eMIOS0[16] / eMIOS0[20] / PDI1_VIU3 / PJ5
eMIOS0[15] / eMIOS0[19] / PDI2_VIU4 / PJ6
eMIOS0[14] / eMIOS0[18] / PDI3_VIU5 / PJ7
PDI_DE / eMIOS0[22] / VIU_PCLK / PJ3
DCULITE_G6 / eMIOS1[21] / CS0_0 / PH4
MA0 / SCK_1 / PB4
FABM / MA1 / SOUT_1 / PB5
ABS[0] / MA2 / SIN_1 / PB6
VDDE_B
VSS
VDD12
VSS
SDA_1/CNRX_1 / AN19 / PL0
SCL_1/CNTX_1 / AN18 / PL1
eMIOS1[22] / CNRX_0 / AN17 / PL2
eMIOS1[23] / CNTX_0 / AN16 / PL3
XTAL32 / AN15 / PC15
EXTAL32 / AN14 / PC14
CS0_1 / MA2 / AN13 / PC13
CS1_1 / MA1 / AN12 / PC12
CS2_1 / MA0 / AN11 / PC11
I2S_DO / AN10_MUX / PC10
AN9 / PC9
AN8 / PC8
VDDE_A
VSSE_A
VDDA
VSSA
AN7 / PC7
AN6 / PC6
AN5 / PC5
AN4 / PC4
AN3 / PC3
AN2 / PC2
AN1 / PC1
AN0 / PC0
DCU_VSYNC_TCON2 / PG8
DCU_HSYNC_TCON1 / PG9
DCU_DE_TCON3 / PG10
eMIOS0[8] / eMIOS1[9] / PDI_HSYNC_VIU1 / PJ1
eMIOS0[9] / eMIOS1[14] / PDI_VSYNC_VIU0 / PJ2
VDDE_B
VSS
eMIOS0[13] / eMIOS0[17] / PDI4_VIU6 / PJ8
eMIOS0[12] / eMIOS1[22] / PDI5_VIU7 / PJ9
eMIOS0[11] / eMIOS1[17] / PDI6_VIU8 / PJ10
eMIOS0[10] / eMIOS1[15] / PDI7_VIU9 / PJ11
RXD_0 / CNRX_0 / PB1
TXD_0 / CNTX_0 / PB0
I2S_DO / CNRX_1 / PB10
SGM_MCLK / CNTX_1 / PB11
TCON4 / RXD_3 / CNRX_2 / PM3
TCON5 / TXD_3 / CNTX_2 / PM4
VSS
VDDE_B
VDDR
VSSR
VSUP_TEST
VDD12
VSS
VDDPLL
VREG_BYPASS
EXTAL
XTAL
VRC_CTRL
RESET
TCON6 / PDI13_VIU5 / CS2_2 / PL4
TCON7 / PDI14_VIU6 / CS1_2 / PL5
eMIOS1[18] / PDI15_VIU7 / CS0_2 / PL6
eMIOS1[19] / PDI16_VIU8 / SIN_2 / PL7
eMIOS1[20] / PDI17_VIU9 / SOUT_2 / PL8
eMIOS1[21] / PDI_PCLK / SCK_2 / PL9
VDDE_B
VSS
DCULITE_TAG / eMIOS1[10] / PDI8_VIU0 / PK2
DCULITE_DE / eMIOS1[11] / PDI9_VIU1 / PK3
DCULITE_HSYNC / eMIOS1[12] / PDI10_VIU2 / PK4
DCULITE_VSYNC / eMIOS1[13] / PDI11_VIU3 / PK5
DCULITE_PCLK / eMIOS1[9] / PDI12_VIU4 / PK6
TCON8 / DCULITE_R2 / RXD_2 / PK7
TCON9 / DCULITE_R3 / TXD_2 / PK8
TCON10 / DCULITE_R4 / I2S_DO / PK9
VSS
VDDE_B
TCK / PH0
TDI / PH1
TDO / PH2
TMS / PH3
Figure 3. 208-pin LQFP pinout
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
25
2.3
416 TEPBGA package pinout
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
ddr_dq[2 ddr_dq[2 ddr_dq[2 ddr_dq[2
ddr_addr ddr_addr ddr_addr ddr_addr ddr_addr
30]
31] ddr_ba[0]ddr_ba[1]ddr_ba[2]
PG12
PF14
6]
7]
8]
9]
ess[0] ess[4] ess[6] ess[8] ess[12]
ddr_dq[2
ddr_dqs[ ddr_dm[3
ddr_addr
ddr_addr ddr_addr
ddr_addr
VSS
VSS ddr_cas ddr_ras VSS ddr_web
VSS
VSS
PF13
5]
3]
]
ess[1]
ess[7] ess[9]
ess[15]
ddr_addr VDDE_DD
ddr_addr VDDE_DD
ddr_dram VDDE_DD
ddr_dq[2 VDDE_DD
ddr_dq[2 VDDE_DD
VSS
PF12
VSS
VSS
VSS
VSS
ess[10]
R
ess[2]
R
_clk
DR
4]
R
3]]
R
ddr_dq[1 ddr_dq[2 ddr_dq[2 ddr_dq[2
VDD33_D ddr_dram
ddr_addr ddr_addr VDD33_D ddr_addr ddr_addr ddr_addr
ddr_cke ddr_cs
PF11
ddr_odt
9]
0]
1]
2]
DR
_clkb
ess[3] ess[5]
DR
ess[11] ess[13] ess[14]
ddr_dq[1
VDDE_DD ddr_dq[1
VSS
7]
R
8]
VDD33_D
ddr_dq[1
MVTT3
VSS
DR
6]
ddr_dq[1 ddr_dqs[ ddr_dm[2 ddr_dq[1
5]
2]
]
4]
ddr_dq[1
VDDE_DD ddr_dq[1
VSS
3]
R
2]
ddr_dq[1
MVTT2
VSS
MVREF
1]
ddr_dqs[ ddr_dm[1 ddr_dq[1
VDD12
VSS
VDD12
VSS
VDD12
VSS
VDD12
ddr_dq[9]
1]
]
0]
VDDE_DD
ddr_dq[7]
VSS
VDD12
VSS
VDD12
VSS
VDD12
VSS
ddr_dq[8] VSS
R
A
B
C
D
E
F
MPC5645S Microcontroller Data Sheet, Rev. 14
G
H
J
K
L
M
ddr_dq[5] MVTT1
VSS
ddr_dq[6]
ddr_dqs[ VDDE_DD
ddr_dq[4]
0]
R
ddr_dm[0
P
ddr_dq[2]
ddr_dq[1] VSS
]
VDD33_D
R
ddr_dq[0] MVTT0
VSS
DR
VDDE_DD
T
PG8
PG10
PG9
R
N
ddr_dq[3]
17
18
19
20
21
22
23
24
25
26
PF10
PF8
PF5
PF3
PK0
PB3
PJ12
PL11
PG7
PG6
A
VDDE
PF15
VSS
PF1
VDDE
PJ15
PL13
VDDE
VSS
PG5
B
VSS
PF7
VDDE
PF0
VSS
PJ14
PL12
PL10
PG3
PG4
C
PF9
PF6
PF4
PK1
PB2
PJ13
PM2
VREF_RS
DS2
PG2
PG1
D
PG11
VSS
VDDE
PG0
E
PA15
PA14
PA13
PA12
F
PA11
PA9
PA8
PA7
G
PA10
VDDE
VSS
VA6
H
PA3
VREF_RS
DS1
PA5
PA4
J
VSS
PA2
VSS
PA1
PA0
K
VDD12
PM13
PM12
VDDE
PJ0
L
VDD12
VSS
VSS
VSS
VSS
VSS
VDD12
VSS
PO7
PO6
PO5
PO4
M
VSS
VDD12
VSS
VSS
VSS
VSS
VSS
VDD12
PO3
VDDE
PO2
PO1
N
VDD12
VSS
VSS
VSS
VSS
VSS
VDD12
VSS
PO0
PN15
VSS
PN14
P
VSS
VDD12
VSS
VSS
VSS
VSS
VSS
VDD12
PE7
PE6
PN13
PN12
R
VDD12
VSS
VDD12
VSS
VDD12
VSS
VDD12
VSS
PE5
PE4
PE3
PE2
T
VSS
VDD12
VSS
VDD12
VSS
VDD12
VSS
VDD12
PE1
VSSM
VDDM
PE0
U
NXP Semiconductors
U
PJ9
PJ8
PJ2
PJ1
V
PB1
VSS
PJ11
PJ10
PD15
PD14
PD13
PD12
V
W
RESET
PB10
VDDE
PB0
PD11
VDDM
VSSM
PD10
W
Y
VSS
PM4
PM3
PB11
PD9
PD8
PD7
PD6
Y
AA
XTAL
PD5
VSSM
VDDM
PD4
AA
AB
EXTAL
PL4
VSS
VDDPLL
PD3
PD2
PD1
PD0
AB
AC
VSUP_TE
ST
PL5
PN0
PK4
PK6
PH0
PF2
PB13
PK11
PN2
PN4
PN8
PB9
PB7
PJ7
PB5
MCKO
MDO6 MDO10
MVO0
PC0
PC3
PC1
PC2
AC
AD
PL6
VDDE
PN1
VSS
PK7
PH1
VDDE
EVTI
MSEO
VSS
PN5
PN9
VDDE
PJ4
PJ3
VSS
MSEO2
MDO7
VDDE
MDO1
PC6
PC4
PC7
PC5
AD
AE
PL7
VSS
PK2
VDDE
PK8
PH2
VSS
EVTO
PM0
VDDE
PN6
PN10
VSS
PJ5
PH4
VDDE
MDO4
MDO8
VSS
MDO2
PL1
PL0
PC10
PC11
PC9
PC8
AE
AF
PL8
PL9
PK3
PK5
PK9
PH3
PB12
PK10
PM1
PN3
PN7
PN11
PB8
PJ6
PB4
PB6
MDO5
MDO9 MDO11 MDO3
PL3
PL2
PC15
PC14
PC13
PC12
AF
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
21
22
23
24
25
26
VREG_BY VRC_CTR
VDDREG
PASS
L
416 TEPBGA pinout
Figure 4. 416 TEPBGA package pinout
18
19
20
VSSEH_A
DC
VDDEH_A
VSSA
DC
VDDA
Pinout and signal descriptions
26
Figure 4 shows the pinout for the 416 TEPBGA package.
2.4
Signal description
The following sections provide signal descriptions and related information about the signals’ functionality and configuration.
2.4.1
Pad configuration during reset phases
All pads have a fixed configuration under reset.
During the power-up phase, all pads are forced to tristate.
After power-up phase, all pads are floating with the following exceptions:
•
•
•
•
PB[5] (FAB) is pull-down. Without external strong pull-up the device starts fetching from flash memory.
RESET pad is driven low. This is released only after PHASE2 reset completion.
Fast (4-16 MHz) external oscillator pads (EXTAL, XTAL) are tristate.
The following pads are pull-up:
— PB[6]
— PH[0]
— PH[1]
— PH[3]
NOTE
TCK pin must have an external pull-down resistor of 4.7 K.
2.4.2
Voltage supply pins
Voltage supply pins are used to provide power to the device. Two dedicated pins are used for 1.2 V regulator stabilization.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
27
Table 3. Voltage supply pin descriptions
Pin number
Supply pin
Function
176 LQFP
VDD121
VSS
208 LQFP
416 TEPBGA
1.2 V core supply (1.08 V - 1.32 V)
23, 50, 67, 110, 138, 23, 58, 79, 136, 162, K10,K12,K14,K16,L
175
186, 207
11,L13,L15,L17,M1
0,M16,N11,N17,P1
0,P16,R11,R17,T10
,T12,T14,T16,U11,
U13,U15,U17
1.2 V ground
7, 18, 36, 49, 66, 68, 7, 18, 38, 47, 57, 64,
111, 123, 133, 139, 78, 80, 137, 147,
154, 167, 176
157, 163, 185, 199,
208
VDD12 ground and VDDPLL ground
(VSSPLL)
24
24
AB3,AD10,AD16,A
D4,AE13,AE19,AE2
,AE7,B11,B14,B19,
B2,B25,B5,B8,C12,
C15,C17,C21,C3,C
6,C9,E2,E24,F3,H2
,H25,J3,K11,K13,K
15,K17,K24,L10,L1
2,L14,L16,L2,M11,
M12,M13,M14,M15,
M17,M3,N10,N12,N
13,N14,N15,N16,P
11,P12,P13,P14,P1
5,P17,P2,P25,R10,
R12,R13,R14,R15,
R16,R3,T11,T13,T1
5,T17,U10,U12,U14
,U16,V2,Y1
—
VDDE_B
3.3 V I/O supply. This supply is shared with
internal flash, 16 MHz IRC oscillator and
4–16MHz crystal oscillator.
6, 19, 37, 48, 65, 89, 6, 19, 37, 48, 56, 63, AD13,AD19,AD2,A
112, 122, 132, 140, 77, 105, 138, 146, D7,AE10,AE16,AE4
166
156, 164, 184, 198 ,B17,B21,B24,C19,
E25,H24,L25,N24,
W3
VDDA2
3.3 V/5 V reference voltage and analog
supply for A/D converter. This supply is
shared with the SXOSC.
79
95
AC22
VSSA
Reference ground and analog ground for A/D
converter
80
96
AD22
VDDR
Voltage regulator VREG supply
20
20
AA4
VSSR
Voltage regulator ground
21
21
—
VDDE_A2
3.3 V/5 V I/O supply. This supply is shared
with the SXOSC.
77
93
AD23
VSSE_A
3.3 V/5 V I/O supply ground
78
94
AC23
VDDM
Stepper motor 3.3 V/5 V pad supply. SSD
shares this supply.
94, 104
110, 120, 130
U25,W24,AA25
VSSM
Stepper motor ground
95, 105
111, 121, 131
U24,W24,AA24
MPC5645S Microcontroller Data Sheet, Rev. 14
28
NXP Semiconductors
Table 3. Voltage supply pin descriptions (continued)
Pin number
Supply pin
Function
176 LQFP
208 LQFP
416 TEPBGA
1.2 V PLL supply
25
25
AB4
9 V - 12 V flash test analog write signal
22
22
AC1
VDD_DR
1.8V, 2.5V, and 3.3V DDR SDRAM supply
—
—
C2,C5,C8,C11,C14,
E3,H3,L3,N3,T3
VDD33_DR
Functional supply for SDRAM pads (where
available must be >= VDD_DR)
—
—
D6, D12, F4, R4
VDDPLL
VSUP_TEST3
1
Decoupling capacitors must be connected between these pins and the nearest VSS pin.
VDDA must be at the same voltage as VDDE_A.
3
This signal needs to be connected to ground during normal operation.
2
2.4.3
System pins
The system pins are listed in Table 4.
Table 4. System pin descriptions
System pin
Function
I/O
direction
Pad
type
RESET
configuration1
I/O
M
Pin number
176 LQFP
208 LQFP
416 TEPBGA
Input, weak pull
up
30
30
W1
RESET
Bidirectional reset with
Schmitt-Trigger
characteristics and noise
filter.
EXTAL
Analog input to the oscillator
amplifier circuit. Input for the
clock generator in bypass
mode.
I
X
—
27
27
AB1
XTAL
Analog output of the
oscillator amplifier circuit.
Needs to be grounded if
oscillator bypass mode is
used.
O
X
—
28
28
AA1
EXTAL32
Analog input of the 32KHz
oscillator amplifier circuit.
O
S
—
70
86
AF24
XTAL32
Analog output of the 32 KHz
oscillator amplifier circuit.
Input for the clock generator
in bypass mode.
I
S
—
69
85
AF23
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
29
Table 4. System pin descriptions (continued)
System pin
NMI
Function
Non-Maskable Interrupt
I/O
direction
Pad
type
RESET
configuration1
I/O
S
VRC_CTRL Voltage Regulator external
NPN Ballast base control
pin
VREF_
RSDS2
RSDS interface reference
voltage
VREG_
BYPASS3
Pin used for factory testing
I
Pin number
176 LQFP
208 LQFP
416 TEPBGA
Input, none
45
53
AC7
Analo
g
—
29
29
AA3
Analo
g
—
—
145, 165
J24,D24
—
—
26
26
AA2
1
Reset configuration is given as I/O direction and pull direction (for example, “Input, pullup”).
Although this signal is not a supply for RSDS pads, it needs to be terminated in an external capacitor with a value of 47 pF.
3 VREG_BYPASS should be connected to ground during normal operation.
2
2.4.4
Nexus pins
On the 176 LQFP and the 208 LQFP package options a reduced set of Nexus pins are optionally available, multiplexed with
GPIO pins.
On the 416 TEPBGA package option all Nexus pins are dedicated to Nexus only.
Table 5. Nexus pins
System pin
Function
Pin number1
Pad
type
PCR
176 LQFP
208 LQFP
416 TEPBGA
EVTI
Nexus Event In
M
PCR[80]
169
201
A17
EVTO
Nexus Event Out
M
PCR[70]
157
189
C20
MCKO
Nexus Msg Clock Out
F
PCR[85]
174
206
B18
MSEO[0]
Nexus Msg Start/End Out
M
PCR[71]
158
190
B20
MSEO[2]
Nexus Msg Start/End Out
M
PCR[73]
159
191
A20
MDO[0]
Nexus Msg Data Out
M
PCR[81]
170
202
D16
MDO[1]
Nexus Msg Data Out
M
PCR[82]
171
203
C16
MDO[2]
Nexus Msg Data Out
M
PCR[83]
172
204
B16
MDO[3]
Nexus Msg Data Out
M
PCR[84]
173
205
A16
EVTI
Nexus Event In
M
PCR[197]
n/a
n/a
AD8
EVTO
Nexus Event Out
M
PCR[198]
n/a
n/a
AE8
MCKO
Nexus Msg Clock Out
F
PCR[200]
n/a
n/a
AC17
MSEO[0]
Nexus Msg Start/End Out
M
PCR[199]
n/a
n/a
AD9
MSEO[2]
Nexus Msg Start/End Out
M
PCR[201]
n/a
n/a
AD17
MDO[0]
Nexus Msg Data Out
M
PCR[185]
n/a
n/a
AC20
MPC5645S Microcontroller Data Sheet, Rev. 14
30
NXP Semiconductors
Table 5. Nexus pins (continued)
System pin
Function
Pin number1
Pad
type
PCR
176 LQFP
208 LQFP
416 TEPBGA
MDO[1]
Nexus Msg Data Out
M
PCR[186]
n/a
n/a
AD20
MDO[2]
Nexus Msg Data Out
M
PCR[187]
n/a
n/a
AE20
MDO[3]
Nexus Msg Data Out
M
PCR[188]
n/a
n/a
AF20
MDO[4]
Nexus Msg Data Out
M
PCR[189]
n/a
n/a
AE17
MDO[5]
Nexus Msg Data Out
M
PCR[190]
n/a
n/a
AF17
MDO[6]
Nexus Msg Data Out
M
PCR[191]
n/a
n/a
AC18
MDO[7]
Nexus Msg Data Out
M
PCR[192]
n/a
n/a
AD18
MDO[8]
Nexus Msg Data Out
M
PCR[193]
n/a
n/a
AE18
MDO[9]
Nexus Msg Data Out
M
PCR[194]
n/a
n/a
AF18
MDO[10]
Nexus Msg Data Out
M
PCR[195]
n/a
n/a
AC19
MDO[11]
Nexus Msg Data Out
M
PCR[196]
n/a
n/a
AF19
1
On the 176 LQFP and 208 LQFP package options the Nexus pins are multiplexed with other GPIO. On the 416 TEPBGA
package, there are additional dedicated Nexus pins.
2.4.5
DRAM interface
The DRAM interface pins are listed in Table 6.
Table 6. DRAM interface pin summary
Port pin1
Function
I/O
direction
Pad
type
PCR
RESET
config2
Pin number
416 TEPBGA
DRAM Data Bus
DDR_DQ[31]
DRAM Data Bus [31]
I/O
DDR
PCR[237] None, None
A6
DDR_DQ[30]
DRAM Data Bus [30]
I/O
DDR
PCR[238] None, None
A5
DDR_DQ[29]
DRAM Data Bus [29]
I/O
DDR
PCR[239] None, None
A4
DDR_DQ[28]
DRAM Data Bus [28]
I/O
DDR
PCR[240] None, None
A3
DDR_DQ[27]
DRAM Data Bus [27]
I/O
DDR
PCR[241] None, None
A2
DDR_DQ[26]
DRAM Data Bus [26]
I/O
DDR
PCR[242] None, None
A1
DDR_DQ[25]
DRAM Data Bus [25]
I/O
DDR
PCR[243] None, None
B1
DDR_DQ[24]
DRAM Data Bus [24]
I/O
DDR
PCR[244] None, None
C4
DDR_DQ[23]
DRAM Data Bus [23]
I/O
DDR
PCR[245] None, None
C1
DDR_DQ[22]
DRAM Data Bus [22]
I/O
DDR
PCR[246] None, None
D4
DDR_DQ[21]
DRAM Data Bus [21]
I/O
DDR
PCR[247] None, None
D3
DDR_DQ[20]
DRAM Data Bus [20]
I/O
DDR
PCR[248] None, None
D2
DDR_DQ[19]
DRAM Data Bus [19]
I/O
DDR
PCR[249] None, None
D1
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
31
Table 6. DRAM interface pin summary (continued)
Port pin1
Function
I/O
direction
Pad
type
PCR
Pin number
RESET
config2
416 TEPBGA
DDR_DQ[18]
DRAM Data Bus [18]
I/O
DDR
PCR[250] None, None
E4
DDR_DQ[17]
DRAM Data Bus [17]
I/O
DDR
PCR[251] None, None
E1
DDR_DQ[16]
DRAM Data Bus [16]
I/O
DDR
PCR[252] None, None
F1
DDR_DQ[15]
DRAM Data Bus [15]
I/O
DDR
PCR[253] None, None
G1
DDR_DQ[14]
DRAM Data Bus [14]
I/O
DDR
PCR[254] None, None
G4
DDR_DQ[13]
DRAM Data Bus [13]
I/O
DDR
PCR[255] None, None
H1
DDR_DQ[12]
DRAM Data Bus [12]
I/O
DDR
PCR[256] None, None
H4
DDR_DQ[11]
DRAM Data Bus [11]
I/O
DDR
PCR[257] None, None
J1
DDR_DQ[10]
DRAM Data Bus [10]
I/O
DDR
PCR[258] None, None
K4
DDR_DQ[9]
DRAM Data Bus [9]
I/O
DDR
PCR[259] None, None
K1
DDR_DQ[8]
DRAM Data Bus [8]
I/O
DDR
PCR[260] None, None
L1
DDR_DQ[7]
DRAM Data Bus [7]
I/O
DDR
PCR[261] None, None
L4
DDR_DQ[6]
DRAM Data Bus [6]
I/O
DDR
PCR[262] None, None
M4
DDR_DQ[5]
DRAM Data Bus [5]
I/O
DDR
PCR[263] None, None
M1
DDR_DQ[4]
DRAM Data Bus [4]
I/O
DDR
PCR[264] None, None
N4
DDR_DQ[3]
DRAM Data Bus [3]
I/O
DDR
PCR[265] None, None
N1
DDR_DQ[2]
DRAM Data Bus [2]
I/O
DDR
PCR[266] None, None
P4
DDR_DQ[1]
DRAM Data Bus [1]
I/O
DDR
PCR[267] None, None
P1
DDR_DQ[0]
DRAM Data Bus [0]
I/O
DDR
PCR[268] None, None
R1
DRAM Data Strobes
DDR_DQS[3]
DRAM Data Strobe [3]
I/O
DDR
PCR[232] None, None
B3
DDR_DQS[2]
DRAM Data Strobe [2]
I/O
DDR
PCR[231] None, None
G2
DDR_DQS[1]
DRAM Data Strobe [1]
I/O
DDR
PCR[230] None, None
K2
DDR_DQS[0]
DRAM Data Strobe [0]
I/O
DDR
PCR[229] None, None
N2
DRAM Data Enables
DDR_DM[3]
DRAM Data Enable [3]
Output
DDR
PCR[236]
Output,
None
B4
DDR_DM[2]
DRAM Data Enable [2]
Output
DDR
PCR[235]
Output,
None
G3
DDR_DM[1]
DRAM Data Enable [1]
Output
DDR
PCR[234]
Output,
None
K3
DDR_DM[0]
DRAM Data Enable [0]
Output
DDR
PCR[233]
Output,
None
P3
DRAM Address
MPC5645S Microcontroller Data Sheet, Rev. 14
32
NXP Semiconductors
Table 6. DRAM interface pin summary (continued)
Port pin1
Function
I/O
direction
Pad
type
PCR
RESET
config2
Pin number
416 TEPBGA
DDR_A[15]
DRAM address [15]
Output
DDR
PCR[217]
Output,
None
B15
DDR_A[14]
DRAM address [14]
Output
DDR
PCR[216]
Output,
None
D15
DDR_A[13]
DRAM address [13]
Output
DDR
PCR[215]
Output,
None
D14
DDR_A[12]
DRAM address [12]
Output
DDR
PCR[214]
Output,
None
A14
DDR_A[11]
DRAM address [11]
Output
DDR
PCR[213]
Output,
None
D13
DDR_A[10]
DRAM address [10]
Output
DDR
PCR[212]
Output,
None
C13
DDR_A[9]
DRAM address [9]
Output
DDR
PCR[211]
Output,
None
B13
DDR_A[8]
DRAM address [8]
Output
DDR
PCR[210]
Output,
None
A13
DDR_A[7]
DRAM address [7]
Output
DDR
PCR[209]
Output,
None
B12
DDR_A[6]
DRAM address [6]
Output
DDR
PCR[208]
Output,
None
A12
DDR_A[5]
DRAM address [5]
Output
DDR
PCR[207]
Output,
None
D11
DDR_A[4]
DRAM address [4]
Output
DDR
PCR[206]
Output,
None
A11
DDR_A[3]
DRAM address [3]
Output
DDR
PCR[205]
Output,
None
D10
DDR_A[2]
DRAM address [2]
Output
DDR
PCR[204]
Output,
None
C10
DDR_A[1]
DRAM address [1]
Output
DDR
PCR[203]
Output,
None
B10
DDR_A[0]
DRAM address [0]
Output
DDR
PCR[202]
Output,
None
A10
DRAM Bank Address
DDR_BA[2]
DRAM Bank Address[2]
Output
DDR
PCR[220]
Output,
None
A9
DDR_BA[1]
DRAM Bank Address[1]
Output
DDR
PCR[219]
Output,
None
A8
DDR_BA[0]
DRAM Bank Address[0]
Output
DDR
PCR[218]
Output,
None
A7
DRAM Control
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
33
Table 6. DRAM interface pin summary (continued)
Port pin1
Function
I/O
direction
Pad
type
PCR
Pin number
RESET
config2
416 TEPBGA
DDR_CAS
Column Address Strobe
Output
DDR
PCR[221]
Output,
None
B6
DDR_RAS
Row Address Strobe
Output
DDR
PCR[227]
Output,
None
B7
DDR_WEB
Write Enable
Output
DDR
PCR[228]
Output,
None
B9
DDR_ODT
DRAM On-die termination
Output
DDR
PCR[226]
Output,
Pull Down
D5
DDR_CLK
DRAM Clock
Output
DDR
PCR[225]
Output,
None
C7
DDR_CLKB
DRAM Clock bar
Output
DDR
NA
Output,
None
D7
DDR_CK
DRAM Clock Enable
Output
DDR
PCR[222]
Output,
Pull Down
D8
DDR_CS
DRAM Chip Select
Output
DDR
PCR[223]
Output,
None
D9
MVREF
DDR Reference Voltage
Input
—
NA
—
J4
MVTT
DRAM Termination Voltage
Input
—
NA
—
F2,J2,M2,R2
1
2
These port pins are disabled and unpowered on packages where the DRAM interface is not bonded out.
Reset configuration is given as I/O direction and pull direction (for example, “Input, pullup”).
2.4.6
VIU muxing
The DCU3, DCULite and VIU2 modules share the same pins for input video. It is, however, possible to feed independent video
streams to VIU2 and DCU3 (operating in narrow mode). Figure 5 explains the pin sharing arrangement.
MPC5645S Microcontroller Data Sheet, Rev. 14
34
NXP Semiconductors
DE
PDI_PCLK
Direct feed of PDI interface
to DCU3 or DCULite
VSYNC
HSYNC
DATA[17:0]
DATA[7:0]
DATA[17:8]
VIU_PCLK
VIU[9:0]
VIU2
DCU3
PDI
DCULite
PDI
RGB565
RGB888
8-bit mono
YUV422
XBAR
Figure 5. VIU2, DCU3, and DCULite pin sharing
VIU input data selection is done based on select bit (bit 0) of Miscellaneous control register (0xC3FE0340).
•
•
•
2.4.7
VIU pix data: VIU[9:0]
Select bit 1’b0: PDI[7:0],HSYNC,VSYNC
Select bit 1’b1: PDI[17:8]
SGM muxing
The SGM shares pins between the PWM output signals and the I2S bus signals as shown in the “Port pin summary” table. When
the PWM function is enabled in the SGM (SGMCTL[PWME]) the PWM (PWMO, PWMOA) signals are available. When the
PWM function is disabled the I2S bus signals (I2S_DO, I2S_SCK) are available.
2.4.8
RSDS special function muxing
Ports PA[0:15], PG[0:7], PG[11] and PM[2] have the RSDS signalling option as a special function. The SIUL allocates pad
control registers to these functions (PCR[270:282]), but because these pads share a common pin with the normal GPIO pins
they do not operate in the same way as the normal GPIO ports. PG[11] in particular has a special configuration separate from
the other pads.
The special-function pads are output-only, and the associated PCR[OBE] bit is controlled by the TCON_CTRL1 register
(TCON_BYPASS and RSDS_MODE bits). However, the alternate function selection is taken from the associated normal GPIO
pad. This allows selection of the DCU3 function as the alternate function of the pad and then the TCON module to select if the
output style is TCON/RSDS or digital RGB format.
Therefore, when the TCON bypass is active (bypass disabled with or without RSDS active), it is important not to configure the
normal GPIO ports for output operation with a non-DCU3 alternate function on ports PA[0:15] and PG[0:7].
For PG[11], the PCR[282] OBE bit is fully controlled by the TCON module and will become an output whenever the DCU3
alternate option is selected. Therefore, only select the DCU3 function on this pin when ready to configure it as a clock for a TFT
panel.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
35
2.4.9
Functional ports
Table 7. Port pin summary
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
PORT A
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
PA[0]
PCR[0]
Option 0
Option 1
Option 2
Option 3
GPIO[0]
DCU_R0
SDA_1
eMIOS0[18]
RSDS0P
SIUL
DCU3
I2C_1
PWM/Timer
I/O
M/
RSDS
None,
none
116
139
K26
PA[1]
PCR[1]
Option 0
Option 1
Option 2
Option 3
GPIO[1]
DCU_R1
SCL_1
eMIOS0[17]
RSDS0M
SIUL
DCU3
I2C_1
PWM/Timer
I/O
M/
RSDS
None,
none
117
140
K25
PA[2]
PCR[2]
Option 0
Option 1
Option 2
Option 3
GPIO[2]
DCU_R2
—
—
RSDS1P
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
118
141
K23
PA[3]
PCR[3]
Option 0
Option 1
Option 2
Option 3
GPIO[3]
DCU_R3
—
—
RSDS1M
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
119
142
J23
PA[4]
PCR[4]
Option 0
Option 1
Option 2
Option 3
GPIO[4]
DCU_R4
—
—
RSDS2P
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
120
143
J26
PA[5]
PCR[5]
Option 0
Option 1
Option 2
Option 3
GPIO[5]
DCU_R5
—
—
RSDS2M
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
121
144
J25
PA[6]
PCR[6]
Option 0
Option 1
Option 2
Option 3
GPIO[6]
DCU_R6
—
—
RSDS3P
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
124
148
H26
PA[7]
PCR[7]
Option 0
Option 1
Option 2
Option 3
GPIO[7]
DCU_R7
—
—
RSDS3M
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
125
149
G26
Pinout and signal descriptions
36
The functional port pins are listed in Table 7.
Table 7. Port pin summary (continued)
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
PA[8]
PCR[8]
Option 0
Option 1
Option 2
Option 3
GPIO[8]
DCU_G0
SCL_2
eMIOS0[20]
RSDS4P
SIUL
DCU3
I2C_2
PWM/Timer
I/O
M/
RSDS
None,
none
126
150
G25
PA[9]
PCR[9]
Option 0
Option 1
Option 2
Option 3
GPIO[9]
DCU_G1
SDA_2
eMIOS0[19]
RSDS4M
SIUL
DCU3
I2C_2
PWM/Timer
I/O
M/
RSDS
None,
none
127
151
G24
PA[10]
PCR[10]
Option 0
Option 1
Option 2
Option 3
GPIO[10]
DCU_G2
—
—
RSDS5P
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
128
152
H23
PA[11]
PCR[11]
Option 0
Option 1
Option 2
Option 3
GPIO[11]
DCU_G3
—
—
RSDS5M
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
129
153
G23
PA[12]
PCR[12]
Option 0
Option 1
Option 2
Option 3
GPIO[12]
DCU_G4
—
—
RSDS6P
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
130
154
F26
PA[13]
PCR[13]
Option 0
Option 1
Option 2
Option 3
GPIO[13]
DCU_G5
—
—
RSDS6M
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
131
155
F25
PA[14]
PCR[14]
Option 0
Option 1
Option 2
Option 3
GPIO[14]
DCU_G6
—
—
RSDS7P
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
134
158
F24
PA[15]
PCR[15]
Option 0
Option 1
Option 2
Option 3
GPIO[15]
DCU_G7
—
—
RSDS7M
SIUL
DCU3
—
—
I/O
M/
RSDS
None,
none
135
159
F23
PCR[16]
Option 0
Option 1
Option 2
Option 3
GPIO[16]
CANTX_0
TXD_0
—
SIUL
FlexCAN_0
LINFlex_0
—
I/O
S
None,
none
13
13
W4
PORT B
PB[0]
—
Pinout and signal descriptions
37
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[17]
Option 0
Option 1
Option 2
Option 3
GPIO[17]
CANRX_0
RXD_0
—
—
SIUL
FlexCAN_0
LINFlex_0
—
I/O
S
None,
none
12
12
V1
PB[2]
PCR[18]
Option 0
Option 1
Option 2
Option 3
GPIO[18]
TXD_0
—
—
—
SIUL
LINFlex_0
—
—
I/O
S
None,
none
153
183
D21
PB[3]
PCR[19]
Option 0
Option 1
Option 2
Option 3
GPIO[19]
RXD_0
—
—
—
SIUL
LINFlex_0
—
—
I/O
S
None,
none
152
182
A22
PB[4]
PCR[20]
Option 0
Option 1
Option 2
Option 3
GPIO[20]
SCK_1
MA0
—
—
SIUL
DSPI_1
ADC
—
I/O
S
None,
none
62
74
AF15
PB[5]
PCR[21]
Option 0
Option 1
Option 2
Option 3
GPIO[21]
SOUT_1
MA1
FABM
—
SIUL
DSPI_1
ADC
Control
I/O
S
Input,
pulldown
63
75
AC16
PB[6]
PCR[22]
Option 0
Option 1
Option 2
Option 3
GPIO[22]
SIN_1
MA2
ABS[0]
—
SIUL
DSPI_1
ADC
Control
I/O
S
Input,
pullup
64
76
AF16
PB[7]
PCR[23]
Option 0
Option 1
Option 2
Option 3
GPIO[23]
SIN_0
eMIOS1[20]
I2S_SCK/PWMO
—
SIUL
DSPI_0
PWM/Timer
SGM
I/O
S
None,
none
55
67
AC14
PB[8]
PCR[24]
Option 0
Option 1
Option 2
Option 3
GPIO[24]
SOUT_0
eMIOS1[19]
I2S_DO/PWMOA
—
SIUL
DSPI_0
PWM/Timer
SGM
I/O
S
None,
none
54
66
AF13
PB[9]
PCR[25]
Option 0
Option 1
Option 2
Option 3
GPIO[25]
SCK_0
eMIOS1[18]
I2S_FS
—
SIUL
DSPI_0
PWM/Timer
SGM
I/O
M
None,
none
53
65
AC13
38
Pinout and signal descriptions
PB[1]
Table 7. Port pin summary (continued)
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PB[10] PCR[26]
Option 0
Option 1
Option 2
Option 3
GPIO[26]
CANRX_1
I2S_DO/PWMOA
—
—
SIUL
FlexCAN_1
SGM
—
I/O
S
None,
none
14
14
W2
PB[11] PCR[27]
Option 0
Option 1
Option 2
Option 3
GPIO[27]
CANTX_1
SGM_MCLK
—
—
SIUL
FlexCAN_1
SGM
—
I/O
S
None,
none
15
15
Y4
PB[12] PCR[28]
Option 0
Option 1
Option 2
Option 3
GPIO[28]
RXD_1
eMIOS1[10]
CS2_0
—
SIUL
LINFlex_1
PWM/Timer
DSPI_0
I/O
S
None,
none
46
54
AF7
PB[13] PCR[29]
Option 0
Option 1
Option 2
Option 3
GPIO[29]
TXD_1
eMIOS1[11]
CS1_0
—
SIUL
LINFlex_1
PWM/Timer
DSPI_0
I/O
S
None,
none
47
55
AC8
PB[14]
—
—
Reserved
—
—
—
—
—
—
—
—
PB[15]
—
—
Reserved
—
—
—
—
—
—
—
—
PORT C
NXP Semiconductors
PC[0]
PCR[30]
Option 0
Option 1
Option 2
Option 3
GPIO[30]
—
—
—
ANS[0]
SIUL
—
—
—
I/O
J
None,
none
88
104
AC21
PC[1]
PCR[31]
Option 0
Option 1
Option 2
Option 3
GPIO[31]
—
—
—
ANS[1]
SIUL
—
—
—
I/O
J
None,
none
87
103
AC25
PC[2]
PCR[32]
Option 0
Option 1
Option 2
Option 3
GPIO[32]
—
—
—
ANS[2]
SIUL
—
—
—
I/O
J
None,
none
86
102
AC26
PC[3]
PCR[33]
Option 0
Option 1
Option 2
Option 3
GPIO[33]
—
—
—
ANS[3]
SIUL
—
—
—
I/O
J
None,
none
85
101
AC24
Pinout and signal descriptions
39
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[34]
Option 0
Option 1
Option 2
Option 3
GPIO[34]
—
—
—
ANS[4]
SIUL
—
—
—
I/O
J
None,
none
84
100
AD24
PC[5]
PCR[35]
Option 0
Option 1
Option 2
Option 3
GPIO[35]
—
—
—
ANS[5]
SIUL
—
—
—
I/O
J
None,
none
83
99
AD26
PC[6]
PCR[36]
Option 0
Option 1
Option 2
Option 3
GPIO[36]
—
—
—
ANS[6]
SIUL
—
—
—
I/O
J
None,
none
82
98
AD21
PC[7]
PCR[37]
Option 0
Option 1
Option 2
Option 3
GPIO[37]
—
—
—
ANS[7]
SIUL
—
—
—
I/O
J
None,
none
81
97
AD25
PC[8]
PCR[38]
Option 0
Option 1
Option 2
Option 3
GPIO[38]
—
—
—
ANS[8]
SIUL
—
—
—
I/O
J
None,
none
76
92
AE26
PC[9]
PCR[39]
Option 0
Option 1
Option 2
Option 3
GPIO[39]
—
—
—
ANS[9]
SIUL
—
—
—
I/O
J
None,
none
75
91
AE25
PC[10] PCR[40]
Option 0
Option 1
Option 2
Option 3
GPIO[40]
—
I2S_DO/PWMO
—
ANS[10]
SIUL
—
SGM
—
I/O
J
None,
none
74
90
AE23
PC[11] PCR[41]
Option 0
Option 1
Option 2
Option 3
GPIO[41]
—
MA0
CS2_1
ANS[11]
SIUL
—
ADC
DSPI_1
I/O
J
None,
None
73
89
AE24
PC[12] PCR[42]
Option 0
Option 1
Option 2
Option 3
GPIO[42]
—
MA1
CS1_1
ANS[12]
SIUL
—
ADC
DSPI_1
I/O
J
None,
None
72
88
AF26
40
Pinout and signal descriptions
PC[4]
Table 7. Port pin summary (continued)
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PC[13] PCR[43]
Option 0
Option 1
Option 2
Option 3
GPIO[43]
—
MA2
CS0_1
ANS[13]
SIUL
—
ADC
DSPI_1
I/O
J
None,
None
71
87
AF25
PC[14] PCR[44]
Option 0
Option 1
Option 2
Option 3
GPIO[44]
—
—
—
ANS[14]
EXTAL32
SIUL
—
—
—
I/O
J
None,
None
70
86
AF24
PC[15] PCR[45]
Option 0
Option 1
Option 2
Option 3
GPIO[45]
—
—
—
ANS[15]
XTAL32
SIUL
—
—
—
I/O
J
None,
None
69
85
AF23
PORT D
NXP Semiconductors
PD[0]
PCR[46]
Option 0
Option 1
Option 2
Option 3
GPIO[46]
M0C0M
SSD0_0
eMIOS1[8]
—
SIUL
SMD
SSD
PWM/Timer
I/O
SMD
None,
None
90
106
AB26
PD[1]
PCR[47]
Option 0
Option 1
Option 2
Option 3
GPIO[47]
M0C0P
SSD0_1
eMIOS1[16]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
91
107
AB25
PD[2]
PCR[48]
Option 0
Option 1
Option 2
Option 3
GPIO[48]
M0C1M
SSD0_2
eMIOS1[23]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
92
108
AB24
PD[3]
PCR[49]
Option 0
Option 1
Option 2
Option 3
GPIO[49]
M0C1P
SSD0_3
eMIOS0[9]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
93
109
AB23
PD[4]
PCR[50]
Option 0
Option 1
Option 2
Option 3
GPIO[50]
M1C0M
SSD1_0
eMIOS0[8]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
96
112
AA26
PD[5]
PCR[51]
Option 0
Option 1
Option 2
Option 3
GPIO[51]
M1C0P
SSD1_1
eMIOS0[16]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
97
113
AA23
Pinout and signal descriptions
41
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[52]
Option 0
Option 1
Option 2
Option 3
GPIO[52]
M1C1M
SSD1_2
eMIOS0[23]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
98
114
Y26
PD[7]
PCR[53]
Option 0
Option 1
Option 2
Option 3
GPIO[53]
M1C1P
SSD1_3
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
99
115
Y25
PD[8]
PCR[54]
Option 0
Option 1
Option 2
Option 3
GPIO[54]
M2C0M
SSD2_0
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
100
116
Y24
PD[9]
PCR[55]
Option 0
Option 1
Option 2
Option 3
GPIO[55]
M2C0P
SSD2_1
eMIOS0[9]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
101
117
Y23
PD[10] PCR[56]
Option 0
Option 1
Option 2
Option 3
GPIO[56]
M2C1M
SSD2_2
eMIOS0[10]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
102
118
W26
PD[11] PCR[57]
Option 0
Option 1
Option 2
Option 3
GPIO[57]
M2C1P
SSD2_3
eMIOS0[11]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
103
119
W23
PD[12] PCR[58]
Option 0
Option 1
Option 2
Option 3
GPIO[58]
M3C0M
SSD3_0
eMIOS0[12]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
106
122
V26
PD[13] PCR[59]
Option 0
Option 1
Option 2
Option 3
GPIO[59]
M3C0P
SSD3_1
eMIOS0[13]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
107
123
V25
PD[14] PCR[60]
Option 0
Option 1
Option 2
Option 3
GPIO[60]
M3C1M
SSD3_2
eMIOS0[14]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
108
124
V24
42
Pinout and signal descriptions
PD[6]
Table 7. Port pin summary (continued)
PCR
PD[15] PCR[61]
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
Option 0
Option 1
Option 2
Option 3
GPIO[61]
M3C1P
SSD3_3
eMIOS0[15]
—
SIUL
SMC
SSD
PWM/Timer
I/O
SMD
None,
None
109
125
V23
PORT E
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
PE[0]
PCR[62]
Option 0
Option 1
Option 2
Option 3
GPIO[62]
M4C0M
SSD4_0
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
—
126
U26
PE[1]
PCR[63]
Option 0
Option 1
Option 2
Option 3
GPIO[63]
M4C0P
SSD4_1
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
—
127
U23
PE[2]
PCR[64]
Option 0
Option 1
Option 2
Option 3
GPIO[64]
M4C1M
SSD4_2
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
—
128
T26
PE[3]
PCR[65]
Option 0
Option 1
Option 2
Option 3
GPIO[65]
M4C1P
SSD4_3
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
—
129
T25
PE[4]
PCR[66]
Option 0
Option 1
Option 2
Option 3
GPIO[66]
M5C0M
SSD5_0
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
—
132
T24
PE[5]
PCR[67]
Option 0
Option 1
Option 2
Option 3
GPIO[67]
M5C0P
SSD5_1
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
—
133
T23
PE[6]
PCR[68]
Option 0
Option 1
Option 2
Option 3
GPIO[68]
M5C1M
SSD5_2
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
—
134
R24
PE[7]
PCR[69]
Option 0
Option 1
Option 2
Option 3
GPIO[69]
M5C1P
SSD5_3
—
—
SIUL
SMC
SSD
—
I/O
SMD
None,
None
—
135
R23
Pinout and signal descriptions
43
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
PORT F
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[70]
Option 0
Option 1
Option 2
Option 3
GPIO[70]
eMIOS1[19]
EVTO
DCULITE_B2
—
SIUL
PWM/Timer
NEXUS
DCULite
I/O
M
None,
None
157
189
C20
PF[1]
PCR[71]
Option 0
Option 1
Option 2
Option 3
GPIO[71]
eMIOS1[20]
MSEO
DCULITE_B3
—
SIUL
PWM/Timer
NEXUS
DCULite
I/O
M
None,
None
158
190
B20
PF[2]
PCR[72]
Option 0
Option 1
Option 2
Option 3
GPIO[72]
NMI
—
—
—
SIUL
NMI
—
—
I/O
S
None,
None
45
53
AC7
PF[3]
PCR[73]
Option 0
Option 1
Option 2
Option 3
GPIO[73]
eMIOS1[21]
MSEO
DCULITE_B4
—
SIUL
PWM/Timer
NEXUS
DCULite
I/O
M
None,
None
159
191
A20
PF[4]
PCR[74]
Option 0
Option 1
Option 2
Option 3
GPIO[74]
eMIOS1[14]
SDA_1
DCULITE_B5
—
SIUL
PWM/Timer
I2C_1
DCULite
I/O
M
None,
None
160
192
D19
PF[5]
PCR[75]
Option 0
Option 1
Option 2
Option 3
GPIO[75]
QUADSPI_IO1_B
eMIOS1[15]
VIU8_PDI16
—
SIUL
QuadSPI
PWM/Timer
VIU2/PDI
I/O
M
None,
None
161
193
A19
PF[6]
PCR[76]
Option 0
Option 1
Option 2
Option 3
GPIO[76]
QUADSPI_IO0_B
eMIOS1[16]
VIU9_PDI17
—
SIUL
QuadSPI
PWM/Timer
VIU2/PDI
I/O
M
None,
None
162
194
D18
PF[7]
PCR[77]
Option 0
Option 1
Option 2
Option 3
GPIO[77]
eMIOS1[15]
SCL_1
DCULITE_B6
—
SIUL
PWM/Timer
I2C_1
DCULite
I/O
M
None,
None
163
195
C18
PF[8]
PCR[78]
Option 0
Option 1
Option 2
Option 3
GPIO[78]
SDA_0
CS2_1
RXD_1
—
SIUL
I2C_0
DSPI_1
LINFlex_1
I/O
S
None,
None
164
196
A18
Pinout and signal descriptions
44
PF[0]
Table 7. Port pin summary (continued)
PF[9]
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[79]
Option 0
Option 1
Option 2
Option 3
GPIO[79]
SCL_0
CS1_1
TXD_1
—
SIUL
I2C_0
DSPI_1
LINFlex_1
I/O
S
None,
None
165
197
D17
PF[10] PCR[80]
Option 0
Option 1
Option 2
Option 3
GPIO[80]
QUADSPI_PCS_A
—
EVTI
—
SIUL
QuadSPI
—
NEXUS
I/O
M
None,
None
169
201
A17
PF[11] PCR[81]
Option 0
Option 1
Option 2
Option 3
GPIO[81]
QUADSPI_IO2_A
—
MDO0
—
SIUL
QuadSPI
—
NEXUS
I/O
M
None,
None
170
202
D16
PF[12] PCR[82]
Option 0
Option 1
Option 2
Option 3
GPIO[82]
QUADSPI_IO3_A
—
MDO1
—
SIUL
QuadSPI
—
NEXUS
I/O
M
None,
None
171
203
C16
PF[13] PCR[83]
Option 0
Option 1
Option 2
Option 3
GPIO[83]
QUADSPI_IO0_A
—
MDO2
—
SIUL
QuadSPI
—
NEXUS
I/O
M
None,
None
172
204
B16
PF[14] PCR[84]
Option 0
Option 1
Option 2
Option 3
GPIO[84]
QUADSPI_IO1_A
—
MDO3
—
SIUL
QuadSPI
—
NEXUS
I/O
M
None,
None
173
205
A16
PF[15] PCR[85]
Option 0
Option 1
Option 2
Option 3
GPIO[85]
QUADSPI_CLK_A
CLKOUT
MCKO
—
SIUL
QuadSPI
Control
NEXUS
I/O
F
None,
None
174
206
B18
PORT G
NXP Semiconductors
PG[0]
PCR[86]
Option 0
Option 1
Option 2
Option 3
GPIO[86]
DCU_B0
SCL_3
eMIOS0[21]
RSDS8P
SIUL
DCU3
I2C_3
PWM/Timer
I/O
M
None,
None
136
160
E26
PG[1]
PCR[87]
Option 0
Option 1
Option 2
Option 3
GPIO[87]
DCU_B1
SDA_3
eMIOS0[22]
RSDS8M
SIUL
DCU3
I2C_3
PWM/Timer
I/O
M
None,
None
137
161
D26
Pinout and signal descriptions
45
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[88]
Option 0
Option 1
Option 2
Option 3
GPIO[88]
DCU_B2
—
—
RSDS9P
SIUL
DCU3
—
—
I/O
M
None,
None
141
166
D25
PG[3]
PCR[89]
Option 0
Option 1
Option 2
Option 3
GPIO[89]
DCU_B3
—
—
RSDS9M
SIUL
DCU3
—
—
I/O
M
None,
None
142
167
C25
PG[4]
PCR[90]
Option 0
Option 1
Option 2
Option 3
GPIO[90]
DCU_B4
—
—
RSDS10P
SIUL
DCU3
—
—
I/O
M
None,
None
143
168
C26
PG[5]
PCR[91]
Option 0
Option 1
Option 2
Option 3
GPIO[91]
DCU_B5
—
—
RSDS10M
SIUL
DCU3
—
—
I/O
M
None,
None
144
169
B26
PG[6]
PCR[92]
Option 0
Option 1
Option 2
Option 3
GPIO[92]
DCU_B6
—
—
RSDS11P
SIUL
DCU3
—
—
I/O
M
None,
None
145
170
A26
PG[7]
PCR[93]
Option 0
Option 1
Option 2
Option 3
GPIO[93]
DCU_B7
—
—
RSDS11M
SIUL
DCU3
—
—
I/O
M
None,
None
146
171
A25
PG[8]
PCR[94]
Option 0
Option 1
Option 2
Option 3
GPIO[94]
DCU_VSYNC
—
—
—
SIUL
DCU3
—
—
I/O
M
None,
None
1
1
T4
PG[9]
PCR[95]
Option 0
Option 1
Option 2
Option 3
GPIO[95]
DCU_HSYNC
—
—
—
SIUL
DCU3
—
—
I/O
M
None,
None
2
2
T2
PG[10] PCR[96]
Option 0
Option 1
Option 2
Option 3
GPIO[96]
DCU_DE
—
—
—
SIUL
DCU3
—
—
I/O
M
None,
None
3
3
T1
46
Pinout and signal descriptions
PG[2]
Table 7. Port pin summary (continued)
PCR
Alternate
function1
Function
Special
function2
Peripheral3
MPC5645S Microcontroller Data Sheet, Rev. 14
PG[11] PCR[97]
Option 0
Option 1
Option 2
Option 3
GPIO[97]
DCU_PCLK
—
—
RSDSCLKP SIUL
DCU3
—
—
PG[12] PCR[98]
Option 0
Option 1
Option 2
Option 3
GPIO[98]
CS0_1
PDI_DE
DCULITE_B7
—
SIUL
DSPI_1
PDI
DCULite
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
I/O
F
None,
None
147
172
E23
I/O
M
None,
None
168
200
A15
NXP Semiconductors
PG[13]
—
—
Reserved
—
—
—
—
—
—
—
—
PG[14]
—
—
Reserved
—
—
—
—
—
—
—
—
PG[15]
—
—
Reserved
—
—
—
—
—
—
—
—
GPIO[99]
TCK
—
—
—
SIUL
JTAG
—
—
I/O
S
Input,
Pull Up
41
49
AC6
PH[1]6 PCR[100] Option 0
Option 1
Option 2
Option 3
GPIO[100]
TDI
—
—
—
SIUL
JTAG
—
—
I/O
S
Input,
Pull Up
42
50
AD6
PH[2]6 PCR[101] Option 0
Option 1
Option 2
Option 3
GPIO[101]
TDO
—
—
—
SIUL
JTAG
—
—
I/O
M
Output,
None
43
51
AE6
PH[3]6 PCR[102] Option 0
Option 1
Option 2
Option 3
GPIO[102]
TMS
—
—
—
SIUL
JTAG
—
—
I/O
S
Input,
Pull Up
44
52
AF6
PH[4]
PCR[103] Option 0
Option 1
Option 2
Option 3
GPIO[103]
CS0_0
eMIOS1[21]
DCULITE_G6
—
SIUL
DSPI_0
PWM/Timer
DCULite
I/O
M
None,
None
61
73
AE15
PH[5]
PCR[104] Option 0
Option 1
Option 2
Option 3
GPIO[104]
VIU7_PDI15
I2S_FS
eMIOS1[8]
—
SIUL
VIU2/PDI
SGM
PWM/Timer
I/O
S
None,
None
38
—
—
PORT H
PH[0]6 PCR[99]
Option 0
Option 1
Option 2
Option 3
Pinout and signal descriptions
47
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PH[6]
—
—
Reserved
—
—
—
—
—
—
—
—
PH[7]
—
—
Reserved
—
—
—
—
—
—
—
—
PH[8]
—
—
Reserved
—
—
—
—
—
—
—
—
PH[9]
—
—
Reserved
—
—
—
—
—
—
—
—
PH[10]
—
—
Reserved
—
—
—
—
—
—
—
—
PH[11]
—
—
Reserved
—
—
—
—
—
—
—
—
PH[12]
—
—
Reserved
—
—
—
—
—
—
—
—
PH[13]
—
—
Reserved
—
—
—
—
—
—
—
—
PH[14]
—
—
Reserved
—
—
—
—
—
—
—
—
PH[15]
—
—
Reserved
—
—
—
—
—
—
—
—
PORT J
PCR[105] Option 0
Option 1
Option 2
Option 3
GPIO[105]
DCULITE_B6
—
I2S_DO / PWMO
—
SIUL
DCULite
—
SGM
I/O
M
None,
None
—
—
L26
PJ[1]
PCR[106] Option 0
Option 1
Option 2
Option 3
GPIO[106]
VIU1_PDI_HSYNC
eMIOS1[9]
eMIOS0[8]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
S
None,
None
4
4
U4
PJ[2]
PCR[107] Option 0
Option 1
Option 2
Option 3
GPIO[107]
VIU0_PDI_VSYNC
eMIOS1[14]
eMIOS0[9]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
S
None,
None
5
5
U3
PJ[3]
PCR[108] Option 0
Option 1
Option 2
Option 3
GPIO[108]
VIU_PCLK
eMIOS0[22]
PDI_DE
—
SIUL
VIU2
PWM/Timer
PDI
I/O
S
None,
None
60
72
AD15
PJ[4]
PCR[109] Option 0
Option 1
Option 2
Option 3
GPIO[109]
VIU2_PDI0
eMIOS0[21]
eMIOS0[23]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
S
None,
None
56
68
AD14
48
Pinout and signal descriptions
PJ[0]
Table 7. Port pin summary (continued)
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
PJ[5]
PCR[110] Option 0
Option 1
Option 2
Option 3
GPIO[110]
VIU3_PDI1
eMIOS0[20]
eMIOS0[16]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
M
None,
None
57
69
AE14
PJ[6]
PCR[111] Option 0
Option 1
Option 2
Option 3
GPIO[111]
VIU4_PDI2
eMIOS0[19]
eMIOS0[15]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
S
None,
None
58
70
AF14
PJ[7]
PCR[112] Option 0
Option 1
Option 2
Option 3
GPIO[112]
VIU5_PDI3
eMIOS0[18]
eMIOS0[14]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
S
None,
None
59
71
AC15
PJ[8]
PCR[113] Option 0
Option 1
Option 2
Option 3
GPIO[113]
VIU6_PDI4
eMIOS0[17]
eMIOS0[13]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
S
None,
None
8
8
U2
PJ[9]
PCR[114] Option 0
Option 1
Option 2
Option 3
GPIO[114]
VIU7_PDI5
eMIOS1[22]
eMIOS0[12]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
S
None,
None
9
9
U1
PJ[10]
PCR[115] Option 0
Option 1
Option 2
Option 3
GPIO[115]
VIU8_PDI6
eMIOS1[17]
eMIOS0[11]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
S
None,
None
10
10
V4
PJ[11]
PCR[116] Option 0
Option 1
Option 2
Option 3
GPIO[116]
VIU9_PDI7
eMIOS1[15]
eMIOS0[10]
—
SIUL
VIU2/PDI
PWM/Timer
PWM/Timer
I/O
S
None,
None
11
11
V3
PJ[12]
PCR[117] Option 0
Option 1
Option 2
Option 3
GPIO[117]
DCU_TAG
—
DCULITE_G6
—
SIUL
DCU3
—
DCULite
I/O
M
None,
None
148
178
A23
PJ[13]
PCR[118] Option 0
Option 1
Option 2
Option 3
GPIO[118]
QUADSPI_PCS_B
eMIOS1[8]
VIU5_PDI13
—
SIUL
QuadSPI
PWM/Timer
VIU2/PDI
I/O
M
None,
None
149
179
D22
Pinout and signal descriptions
49
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[119] Option 0
Option 1
Option 2
Option 3
GPIO[119]
QUADSPI_CLK_B
eMIOS1[17]
PDI_PCLK
—
SIUL
QuadSPI
PWM/Timer
PDI
I/O
F
None,
None
150
180
C22
PJ[15]
PCR[120] Option 0
Option 1
Option 2
Option 3
GPIO[120]
QUADSPI_IO3_B
eMIOS1[9]
VIU6_PDI14
—
SIUL
QuadSPI
PWM/Timer
VIU2/PDI
I/O
M
None,
None
151
181
B22
PK[0]
PCR[121] Option 0
Option 1
Option 2
Option 3
GPIO[121]
eMIOS1[18]]
—
DCULITE_G7
—
SIUL
PWM/Timer
—
DCULite
I/O
M
None,
None
155
187
A21
PK[1]
PCR[122] Option 0
Option 1
Option 2
Option 3
GPIO[122]
QUADSPI_IO2_B
eMIOS1[14]
VIU7_PDI15
—
SIUL
QuadSPI
PWM/Timer
VIU2/PDI
I/O
M
None,
None
156
188
D20
PK[2]
PCR[123] Option 0
Option 1
Option 2
Option 3
GPIO[123]
VIU0_PDI8
eMIOS1[10]
DCULITE_TAG
—
SIUL
VIU2/PDI
PWM/Timer
DCULite
I/O
M
None,
None
31
39
AE3
PK[3]
PCR[124] Option 0
Option 1
Option 2
Option 3
GPIO[124]
VIU1_PDI9
eMIOS1[11]
DCULITE_DE
—
SIUL
VIU2/PDI
PWM/Timer
DCULite
I/O
M
None,
None
32
40
AF3
PK[4]
PCR[125] Option 0
Option 1
Option 2
Option 3
GPIO[125]
VIU2_PDI10
eMIOS1[12]
DCULITE_HSYNC
—
SIUL
VIU2/PDI
PWM/Timer
DCULite
I/O
M
None,
None
33
41
AC4
PK[5]
PCR[126] Option 0
Option 1
Option 2
Option 3
GPIO[126]
VIU3_PDI11
eMIOS1[13]
DCULITE_VSYNC
—
SIUL
VIU2/PDI
PWM/Timer
DCULite
I/O
M
None,
None
34
42
AF4
PK[6]
PCR[127] Option 0
Option 1
Option 2
Option 3
GPIO[127]
VIU4_PDI12
eMIOS1[9]
DCULITE_PCLK
—
SIUL
VIU2/PDI
PWM/Timer
DCULite
I/O
F
None,
None
35
43
AC5
PORT K
Pinout and signal descriptions
50
PJ[14]
Table 7. Port pin summary (continued)
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PK[7]
PCR[128] Option 0
Option 1
Option 2
Option 3
GPIO[128]
RXD_2
DCULITE_R2
TCON[8]
—
SIUL
LINFlex_2
DCULite
TCON
I/O
M
None,
None
—
44
AD5
PK[8]
PCR[129] Option 0
Option 1
Option 2
Option 3
GPIO[129]
TXD_2
DCULITE_R3
TCON[9]
—
SIUL
LINFlex_2
DCULite
TCON
I/O
M
None,
None
—
45
AE5
PK[9]
PCR[130] Option 0
Option 1
Option 2
Option 3
GPIO[130]
I2S_DO / PWMO
DCULITE_R4
TCON[10]
—
SIUL
SGM
DCULite
TCON
I/O
M
None,
None
—
46
AF5
PK[10]
PCR[131] Option 0
Option 1
Option 2
Option 3
GPIO[131]
SDA_1
eMIOS1[12]
DCULITE_TAG
—
SIUL
I2C_1
PWM/Timer
DCULite
I/O
S
None,
None
51
59
AF8
PK[11]
PCR[132] Option 0
Option 1
Option 2
Option 3
GPIO[132]
SCL_1
eMIOS1[13]
DCU_TAG
—
SIUL
I2C_1
PWM/Timer
DCU3
I/O
S
None,
None
52
60
AC9
PK[12]
—
—
Reserved
—
—
—
—
—
—
—
—
PK[13]
—
—
Reserved
—
—
—
—
—
—
—
—
PK[14]
—
—
Reserved
—
—
—
—
—
—
—
—
PK[15]
—
—
Reserved
—
—
—
—
—
—
—
—
PORT L
NXP Semiconductors
PL[0]
PCR[133] Option 0
Option 1
Option 2
Option 3
GPIO[133]
—
CANRX_1
SDA_1
ANS[19]
SIUL
—
FlexCAN_1
I2C1
I/O
M/
None,
ANALO None
G
—
81
AE22
PL[1]
PCR[134] Option 0
Option 1
Option 2
Option 3
GPIO[134]
—
CANTX_1
SCL_1
ANS[18]
SIUL
—
FlexCAN_1
I2C1
I/O
M/
None,
ANALO None
G
—
82
AE21
Pinout and signal descriptions
51
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[135] Option 0
Option 1
Option 2
Option 3
GPIO[135]
—
CANRX_0
eMIOS1[22]
ANS[17]
SIUL
—
FlexCAN_0
PWM/Timer
I/O
S/
None,
ANALO None
G
—
83
AF22
PL[3]
PCR[136] Option 0
Option 1
Option 2
Option 3
GPIO[136]
—
CANTX_0
eMIOS1[23]
ANS[16]
SIUL
—
FlexCAN_0
PWM/Timer
I/O
S/
None,
ANALO None
G
—
84
AF21
PL[4]
PCR[137] Option 0
Option 1
Option 2
Option 3
GPIO[137]
CS2_2
VIU5_PDI13
TCON[6]
—
SIUL
DSPI_2
VIU2/PDI
TCON
I/O
M
None,
None
—
31
AB2
PL[5]
PCR[138] Option 0
Option 1
Option 2
Option 3
GPIO[138]
CS1_2
VIU6_PDI14
TCON[7]
—
SIUL
DSPI_2
VIU2/PDI
TCON
I/O
M
None,
None
—
32
AC2
PL[6]
PCR[139] Option 0
Option 1
Option 2
Option 3
GPIO[139]
CS0_2
VIU7_PDI15
eMIOS1[18]
—
SIUL
DSPI_2
VIU2/PDI
PWM/Timer
I/O
S
None,
None
—
33
AD1
PL[7]
PCR[140] Option 0
Option 1
Option 2
Option 3
GPIO[140]
SIN_2
VIU8_PDI16
eMIOS1[19]
—
SIUL
DSPI_2
VIU2/PDI
PWM/Timer
I/O
S
None,
None
—
34
AE1
PL[8]
PCR[141] Option 0
Option 1
Option 2
Option 3
GPIO[141]
SOUT_2
VIU9_PDI17
eMIOS1[20]
—
SIUL
DSPI_2
VIU2/PDI
PWM/Timer
I/O
S
None,
None
—
35
AF1
PL[9]
PCR[142] Option 0
Option 1
Option 2
Option 3
GPIO[142]
SCK_2
PDI_PCLK
eMIOS1[21]
—
SIUL
DSPI_2
PDI
PWM/Timer
I/O
S
None,
None
—
36
AF2
PL[10]
PCR[143] Option 0
Option 1
Option 2
Option 3
GPIO[143]
eMIOS1[10]
DCULITE_G2
—
—
SIUL
PWM/Timer
DCULite
—
I/O
M
None,
None
—
174
C24
52
Pinout and signal descriptions
PL[2]
Table 7. Port pin summary (continued)
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PL[11]
PCR[144] Option 0
Option 1
Option 2
Option 3
GPIO[144]
eMIOS1[11]
DCULITE_G3
—
—
SIUL
PWM/Timer
DCULite
—
I/O
M
None,
None
—
175
A24
PL[12]
PCR[145] Option 0
Option 1
Option 2
Option 3
GPIO[145]
eMIOS1[12]
DCULITE_G4
—
—
SIUL
PWM/Timer
DCULite
—
I/O
M
None,
None
—
176
C23
PL[13]
PCR[146] Option 0
Option 1
Option 2
Option 3
GPIO[146]
eMIOS1[13]
DCULITE_G5
—
—
SIUL
PWM/Timer
DCULite
—
I/O
M
None,
None
—
177
B23
PL[14]
—
—
Reserved
—
—
—
—
—
—
—
—
PL[15]
—
—
Reserved
—
—
—
—
—
—
—
—
PORT M
NXP Semiconductors
PM[0]
PCR[147] Option 0
Option 1
Option 2
Option 3
GPIO[147]
I2S_SCK / PWMO
DCULITE_R5
TCON[11]
—
SIUL
SGM
DCULite
TCON
I/O
M
None,
None
—
61
AE9
PM[1]
PCR[148] Option 0
Option 1
Option 2
Option 3
GPIO[148]
I2S_FS
DCULITE_R6
—
—
SIUL
SGM
DCULite
—
I/O
M
None,
None
—
62
AF9
PM[2]
PCR[149] Option 0
Option 1
Option 2
Option 3
GPIO[149]
eMIOS1[17]
DCULITE_R7
DCULITE_DE
I/O
M
None,
None
—
173
D23
PM[3]
PCR[150] Option 0
Option 1
Option 2
Option 3
GPIO[150]
CANRX_2
RXD_3
TCON[4]
—
SIUL
FlexCAN_2
LINFlex_3
TCON
I/O
M
None,
None
—
16
Y3
PM[4]
PCR[151] Option 0
Option 1
Option 2
Option 3
GPIO[151]
CANTX_2
TXD_3
TCON[5]
—
SIUL
FlexCAN_2
LINFlex_3
TCON
I/O
M
None,
None
—
17
Y2
RSDSCLKM SIUL
PWM/Timer
DCULite
DCULite
Pinout and signal descriptions
53
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[152] Option 0
Option 1
Option 2
Option 3
GPIO[152]
VIU5_PDI13
eMIOS1[22]
DCU_TAG
—
SIUL
VIU2/PDI
PWM/Timer
DCU3
I/O
M
None,
None
16
—
—
PM[6]
PCR[153] Option 0
Option 1
Option 2
Option 3
GPIO[153]
VIU6_PDI14
eMIOS1[23]
DCULITE_TAG
—
SIUL
VIU2/PDI
PWM/Timer
DCULite
I/O
M
None,
None
17
—
—
PM[7]
PCR[154] Option 0
Option 1
Option 2
Option 3
GPIO[154]
VIU8_PDI16
I2S_DO / PWMOA
eMIOS1[16]
—
SIUL
VIU2/PDI
SGM
PWM/Timer
I/O
S
None,
None
39
—
—
PM[8]
PCR[155] Option 0
Option 1
Option 2
Option 3
GPIO[155]
VIU9_PDI17
I2S_SCK / PWMO
eMIOS1[23]
—
SIUL
VIU2/PDI
SGM
PWM/Timer
I/O
S
None,
None
40
—
—
PM[9]
PCR[156] Option 0
Option 1
Option 2
Option 3
GPIO[156]
PDI_PCLK
SGM_MCLK
eMIOS0[8]
—
SIUL
PDI
SGM
PWM/Timer
I/O
M
None,
None
113
—
—
PM[10] PCR[157] Option 0
Option 1
Option 2
Option 3
GPIO[157]
RXD_2
CANRX_2
eMIOS0[16]
—
SIUL
LINFlex_2
FlexCAN_2
PWM/Timer
I/O
S
None,
None
114
—
—
PM[11] PCR[158] Option 0
Option 1
Option 2
Option 3
GPIO[158]
TXD_2
CANTX_2
eMIOS0[23]
—
SIUL
LINFlex_2
FlexCAN_2
PWM/Timer
I/O
S
None,
None
115
—
—
PM[12] PCR[159] Option 0
Option 1
Option 2
Option 3
GPIO[159]
DCULITE_B7
—
I2S_SCK / PWMO
—
SIUL
DCULite
—
SGM
I/O
M
None,
None
—
—
L24
PM[13] PCR[160] Option 0
Option 1
Option 2
Option 3
GPIO[160]
DCULITE_PCLK
—
SGM_MCLK
—
SIUL
DCULite
—
SGM
I/O
F
None,
None
—
—
L23
PM[14]
Reserved
—
—
—
—
—
—
—
—
—
—
Pinout and signal descriptions
54
PM[5]
Table 7. Port pin summary (continued)
PCR
PM[15]
—
Alternate
function1
—
Special
function2
Peripheral3
Reserved
—
—
Function
I/O
direction
—
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
—
—
—
—
—
PORT N
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
PN[0]
PCR[161] Option 0
Option 1
Option 2
Option 3
GPIO[161]
DCULITE_HSYNC
—
TCON[4]
—
SIUL
DCULite
—
TCON
I/O
M
None,
None
—
—
AC3
PN[1]
PCR[162] Option 0
Option 1
Option 2
Option 3
GPIO[162]
DCULITE_VSYNC
—
TCON[5]
—
SIUL
DCULite
—
TCON
I/O
M
None,
None
—
—
AD3
PN[2]
PCR[163] Option 0
Option 1
Option 2
Option 3
GPIO[163]
DCULITE_R0
RXD_2
VIU0_PDI8
—
SIUL
DCULite
LINFlex_2
VIU2/PDI
I/O
M
None,
None
—
—
AC10
PN[3]
PCR[164] Option 0
Option 1
Option 2
Option 3
GPIO[164]
DCULITE_R1
TXD_2
VIU1_PDI9
—
SIUL
DCULite
LINFlex_2
VIU2/PDI
I/O
M
None,
None
—
—
AF10
PN[4]
PCR[165] Option 0
Option 1
Option 2
Option 3
GPIO[165]
DCULITE_R2
—
TCON[6]
—
SIUL
DCULite
—
TCON
I/O
M
None,
None
—
—
AC11
PN[5]
PCR[166] Option 0
Option 1
Option 2
Option 3
GPIO[166]
DCULITE_R3
—
TCON[7]
—
SIUL
DCULite
—
TCON
I/O
M
None,
None
—
—
AD11
PN[6]
PCR[167] Option 0
Option 1
Option 2
Option 3
GPIO[167]
DCULITE_R4
—
TCON[8]
—
SIUL
DCULite
—
TCON
I/O
M
None,
None
—
—
AE11
PN[7]
PCR[168] Option 0
Option 1
Option 2
Option 3
GPIO[168]
DCULITE_R5
—
TCON[9]
—
SIUL
DCULite
—
TCON
I/O
M
None,
None
—
—
AF11
Pinout and signal descriptions
55
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PCR[169] Option 0
Option 1
Option 2
Option 3
GPIO[169]
DCULITE_R6
—
TCON[10]
—
SIUL
DCULite
—
TCON
I/O
M
None,
None
—
—
AC12
PN[9]
PCR[170] Option 0
Option 1
Option 2
Option 3
GPIO[170]
DCULITE_R7
—
TCON[11]
—
SIUL
DCULite
—
TCON
I/O
M
None,
None
—
—
AD12
PN[10] PCR[171] Option 0
Option 1
Option 2
Option 3
GPIO[171]
DCULITE_G0
RXD_3
VIU2_PDI10
—
SIUL
DCULite
LINFlex_3
VIU2/PDI
I/O
M
None,
None
—
—
AE12
PN[11] PCR[172] Option 0
Option 1
Option 2
Option 3
GPIO[172]
DCULITE_G1
TXD_3
VIU3_PDI11
—
SIUL
DCULite
LINFlex_3
VIU2/PDI
I/O
M
None,
None
—
—
AF12
PN[12] PCR[173] Option 0
Option 1
Option 2
Option 3
GPIO[173]
DCULITE_G2
—
eMIOS0[17]
—
SIUL
DCULite
—
PWM/Timer
I/O
M
None,
None
—
—
R26
PN[13] PCR[174] Option 0
Option 1
Option 2
Option 3
GPIO[174]
DCULITE_G3
—
eMIOS0[18]
—
SIUL
DCULite
—
PWM/Timer
I/O
M
None,
None
—
—
R25
PN[14] PCR[175] Option 0
Option 1
Option 2
Option 3
GPIO[175]
DCULITE_G4
—
eMIOS0[19]
—
SIUL
DCULite
—
PWM/Timer
I/O
M
None,
None
—
—
P26
PN[15] PCR[176] Option 0
Option 1
Option 2
Option 3
GPIO[176]
DCULITE_G5
—
eMIOS0[20]
—
SIUL
DCULite
—
PWM/Timer
I/O
M
None,
None
—
—
P24
GPIO[177]
DCULITE_G6
—
eMIOS0[21]
—
SIUL
DCULite
—
PWM/Timer
I/O
M
None,
None
—
—
P23
PORT P
PP[0]
56
PCR[177] Option 0
Option 1
Option 2
Option 3
Pinout and signal descriptions
PN[8]
Table 7. Port pin summary (continued)
PCR
Alternate
function1
Function
Special
function2
Peripheral3
I/O
direction
Pad RESET
Type4 config5
Pin number
176 LQFP 208 LQFP 416 TEPBGA
MPC5645S Microcontroller Data Sheet, Rev. 14
PP[1]
PCR[178] Option 0
Option 1
Option 2
Option 3
GPIO[178]
DCULITE_G7
—
eMIOS0[22]
—
SIUL
DCULite
—
PWM/Timer
I/O
M
None,
None
—
—
N26
PP[2]
PCR[179] Option 0
Option 1
Option 2
Option 3
GPIO[179]
DCULITE_B0
CANRX_2
VIU4_PDI12
—
SIUL
DCULite
FlexCAN_2
VIU2/PDI
I/O
M
None,
None
—
—
N25
PP[3]
PCR[180] Option 0
Option 1
Option 2
Option 3
GPIO[180]
DCULITE_B1
CANTX_2
PDI_DE
—
SIUL
DCULite
FlexCAN_2
PDI
I/O
M
None,
None
—
—
N23
PP[4]
PCR[181] Option 0
Option 1
Option 2
Option 3
GPIO[181]
DCULITE_B2
—
eMIOS0[11]
—
SIUL
DCULite
—
PWM/Timer
I/O
M
None,
None
—
—
M26
PP[5]
PCR[182] Option 0
Option 1
Option 2
Option 3
GPIO[182]
DCULITE_B3
—
eMIOS0[13]
—
SIUL
DCULite
—
PWM/Timer
I/O
M
None,
None
—
—
M25
PP[6]
PCR[183] Option 0
Option 1
Option 2
Option 3
GPIO[183]
DCULITE_B4
—
eMIOS0[15]
—
SIUL
DCULite
—
PWM/Timer
I/O
M
None,
None
—
—
M24
PP[7]
PCR[184] Option 0
Option 1
Option 2
Option 3
GPIO[184]
DCULITE_B5
—
I2S_FS
—
SIUL
DCULite
—
SGM
I/O
M
None,
None
—
—
M23
NXP Semiconductors
PP[8]
—
—
Reserved
—
—
—
—
—
—
—
—
PP[9]
—
—
Reserved
—
—
—
—
—
—
—
—
PP[10]
—
—
Reserved
—
—
—
—
—
—
—
—
PP[11]
—
—
Reserved
—
—
—
—
—
—
—
—
Pinout and signal descriptions
57
Port
pin
Table 7. Port pin summary (continued)
NXP Semiconductors
Port
pin
PCR
PP[12]
—
—
PP[13]
—
PP[14]
PP[15]
1
MPC5645S Microcontroller Data Sheet, Rev. 14
2
3
4
5
6
Alternate
function1
I/O
direction
Pad RESET
Type4 config5
Pin number
Special
function2
Peripheral3
Reserved
—
—
—
—
—
—
—
—
—
Reserved
—
—
—
—
—
—
—
—
—
—
Reserved
—
—
—
—
—
—
—
—
—
—
Reserved
—
—
—
—
—
—
—
—
Function
176 LQFP 208 LQFP 416 TEPBGA
Alternate functions are chosen by setting the values of the PCR[PA] bitfields inside the SIUL module.
PCR[PA] = 00 selects Option 0
PCR[PA] = 01 selects Option 1
PCR[PA] = 10 selects Option 2
PCR[PA] = 11 selects Option 3
This is intended to select the output functions. To use one of the input functions, the PCR[IBE] bit must be written to ‘1’, regardless of the values selected in
the PCR[PA] bitfields. For this reason, the value corresponding to an input only function is reported as “—”.
Special functions are enabled independently from the standard digital pin functions. Enabling standard I/O functions in the PCR registers may interfere with
their functionality. ADC functions are enabled using the PCR[APC] bit; other functions are enabled by enabling the respective module.
Using the PSMI registers in the System Integration Unit Lite (SIUL), different pads can be multiplexed to the same peripheral input. Please see the SIUL chapter
of the MPC5645S Microcontroller Reference Manual for details.
See the “Pad types” table for an explanation of the letters in this column.
Reset configuration is given as I/O direction and pull, e.g., “Input, pullup”.
Out of reset pins PH[0:3] are available as JTAG pins (TCK, TDI, TDO and TMS respectively). It is up to the user to configure pins PH[0:3] when needed.
The location of TCON[0:3] pins is mentioned in the following table.
Table 8. Location of TCON[0:3] Pins
Port Name
PCR
Ball Number
DCU_TAG / TCON0
PK11
PCR[132]
Ball No: AC09
DCU_TAG / TCON0
PJ12
PCR[117]
Ball No: A23
DCU_HSYNC/TCON1
PG9
PCR[95]
Ball No: T02
DCU_VSYNC / TCON2
PG8
PCR[94]
Ball No: T04
DCU_DE / TCON3
PG10
PCR[96]
Ball No: T01
DCU_TAG/TCON3
PM5
PCR[152]
NC (only on 176)
58
Pinout and signal descriptions
Function
The following pad types are available for system pins and functional port pins:
Table 9. Pad Types
Pad
Function
S
Slow (pad_ssr, pad_ssr_hv)
M
Medium (pad_msr, pad_msr_hv)
F
Fast (pad_fc)
J
Input/output with analog features (pad_tgate, pad_tgate_hv)
Analog
Input only with analog features (pad_ae, pad_ae_hv)
SMD
Stepper Motor Detector
DDR
DDR pads
RSDS
RSDS pads
MPC5645S Microcontroller Data Sheet, Rev. 14
59
NXP Semiconductors
3
System design information
3.1
Power-up sequencing
The preferred power-up sequence for MPC5645S is as follows:
1.
Generic IO supplies or noise-free supplies, consisting of:
— VDDA
— VDDE_A
— VDDE_B
— VDDM
— VDD_DR
— VDD33_DR
— VDDPLL
2.
All 3.3V supplies (VDDE_B & VDD33_DR) should be ramped up first, and then the rest of the I/O supplies should
be ramped up (VDDA, VDDE_A, VDDM, VDD_DR).
VDDR, the regulator input supply, should be the last supply to ramp up; all supplies can be ramped up together as long
as VDDR is included. So all 5V supplies should be ramped up after the 3.3V supplies, and if all the supplies are of the
same level, they can be ramped up together as well.
LV supply (VDD12). If Vreg is in bypass mode and the core supply (1.2V) is supplied externally, then this should be
the last supply given.
3.
4.
NOTE
For DDR, the 3.3 V supply (VDD33_DR) should come before VDD_DR.
NOTE
Vreg bypass mode is for factory testing only.
This sequence ensures that when VREG releases its LVDs, the IO and other HV segments are powered properly. This is
important because MPC5645S doesn't monitor LVDs on IO HV supplies.
4
Electrical characteristics
4.1
Introduction
This section contains electrical characteristics of the device as well as temperature and power considerations.
This product contains devices to protect the inputs against damage due to high static voltages. However, it is advisable to take
precautions to avoid application of any voltage higher than the specified maximum rated voltages.
To enhance reliability, unused inputs can be driven to an appropriate logic voltage level (VDD or VSS). This could be done by
internal pull up and pull down, which is provided by the product for most general purpose pins.
The parameters listed in the following tables represent the characteristics of the device and its demands on the system.
In the tables where the device logic provides signals with their respective timing characteristics, the symbol “CC” for Controller
Characteristics is included in the Symbol column.
In the tables where the external system must provide signals with their respective timing characteristics to the device, the symbol
“SR” for System Requirement is included in the Symbol column.
MPC5645S Microcontroller Data Sheet, Rev. 14
60
NXP Semiconductors
4.2
Parameter classification
The electrical parameters shown in this supplement are guaranteed by various methods. To give the
customer a better understanding, the classifications listed in Table 10 are used and the parameters are
tagged accordingly in the tables where appropriate.
Table 10. Parameter Classifications
Classification tag
Tag description
P
Those parameters are guaranteed during production testing on each individual device.
C
Those parameters are achieved by the design characterization by measuring a statistically
relevant sample size across process variations.
T
Those parameters are achieved by design characterization on a small sample size from typical
devices under typical conditions unless otherwise noted. All values shown in the typical column
are within this category.
D
Those parameters are derived mainly from simulations.
NOTE
The classification is shown in the column labeled “C” in the parameter
tables where appropriate.
4.3
Absolute maximum ratings
Table 11. Absolute maximum ratings
Value
Symbol
VDDA
C
SR
Parameter
D Voltage on VDDA pin (ADC reference) with
respect to ground (VSSA)
Conditions
—
Min
Max
–0.3
+5.5
Relative to VDD VDD–0.3
Unit
SpecID
V
D1.1
VDD+0.3
VSSA
SR
D Voltage on VSSA (ADC reference) pin with
respect VSS
—
VSS–0.1
VSS+0.1
V
D1.2
VDDPLL
CC
D Voltage on VDDPLL (1.2 V PLL supply) pin with
respect to ground (VSSPLL)
—
1.08
1.4
V
D1.3
V
D1.4
VDDR
SR
D Voltage on VDDR pin (regulator supply) with
respect to ground (VSSR)
Relative to VDD VDD–0.3
—
–0.3
Relative to VDD VDD–0.3
VDD+0.3
+5.5
VDD+0.3
VSSR
SR
D Voltage on VSSR (regulator ground) pin with
respect to VSS
—
VSS–0.1
VSS+0.1
V
D1.5
VDD12
CC
D Voltage on VDD12 pin with respect to ground
(VSS12)
—
1.08
1.4
V
D1.6
VSS12
CC
D Voltage on VSS12 pin with respect to VSS
—
VSS–0.1
VSS+0.1
V
D1.7
VDDE_A1
SR
D Voltage on VDDE_A (I/O supply) pin with
respect to ground (VSSE_A)
—
–0.3
+5.5
V
D1.8
VDDE_B1
SR
D Voltage on VDDE_B (I/O supply) pin with
respect to ground (VSS)
—
–0.3
+3.6
V
D1.9
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
61
Table 11. Absolute maximum ratings (continued)
Value
Symbol
C
Parameter
Conditions
Min
Max
Unit
SpecID
VDDM1
SR
D Voltage on VDDM (stepper motor supply) pin
with respect to ground (VSSM)
—
–0.3
+5.5
V
D1.10
VSS2
SR
D I/O supply ground
—
0
0
V
D1.11
VDD_DR
D Voltage on VDDDDR with respect to VSS
—
–0.3
3.6
V
D1.12
VRSDS
D Voltage on VDDRSDS with respect to VSS
—
–0.3
3.6
V
D1.13
VIN
SR
D Voltage on any GPIO pin with respect to ground
(VSS)
—
–0.3
VDDmax
(VDDE max of
that
segment)
V
—
IINJPAD
SR
D Injected input current on any pin during
overload condition
—
–10
10
mA
D1.15
IINJSUM
SR
D Absolute sum of all injected input currents
during overload condition
—
–50
50
T Storage temperature
—
–55
150
°C
D1.17
T ESD Susceptibility (Human Body Model)
—
—
2000
V
D1.18
TSTORAGE SR
SR
ESDHBM
D1.16
1
Throughout the remainder of this document VDD refers collectively to I/O voltage supplies, i.e., VDDE_A, VDDE_B, and VDDM,
unless otherwise noted.
2 Throughout the remainder of this document V
SS refers collectively to I/O voltage supply grounds, i.e., VSSE_A, VSSPLL, and
VSSM, unless otherwise noted.
NOTE
Stresses exceeding the recommended absolute maximum ratings may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification are not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. During overload conditions (VIN > VDD or
VIN < VSS), the voltage on pins with respect to ground (VSS) must not exceed the
recommended values.
4.4
Recommended operating conditions
Table 12. Recommended operating conditions (3.3 V)
Value
Symbol
C
Parameter
Conditions
Min
VDDA1
—
+3.0
SR P Voltage on VDDA pin (ADC reference) with respect to ground (VSS)
D
Relative to VDD VDD–0.1
Unit
SpecID
V
D2.1
Max
+3.6
VDD+0.1
VSSA
SR P Voltage on VSSA (ADC reference) pin with
respect VSS
—
VSS–0.1
VSS+0.1
V
D2.2
VDDPLL
CC P Voltage on VDDPLL (1.2 V PLL supply) pin
with respect to ground (VSSPLL)
—
1.08
1.32
V
D2.3
MPC5645S Microcontroller Data Sheet, Rev. 14
62
NXP Semiconductors
Table 12. Recommended operating conditions (3.3 V) (continued)
Value
Symbol
C
Parameter
Conditions
Min
VDDR2
Unit
SpecID
V
D2.4
Max
SR P Voltage on VDDR pin (regulator supply) with
—
+3.0
respect to ground (VSSR)
D
Relative to VDD VDD–0.1
+3.6
VDD+0.1
SR D Voltage on VSSR (regulator ground) pin with
respect to VSS
—
VSS–0.1
VSS+0.1
V
D2.5
VDD123,4 CC P Voltage on VDD12 pin with respect to ground
(VSS12)
—
1.08
1.4
V
D2.6
—
VSS–0.1
VSS+0.1
V
D2.7
SR P Voltage on VDD pins (VDDE_A, VDDE_B,
VDD_DR, VDDM) with respect to ground (VSS)
—
VDDmin
5
5
V
D2.8
VSSR
VSS12
VDD
5,6,7
VSS8
CC D Voltage on VSS12 pin with respect to VSS
VDDmax
SR D I/O supply ground
—
0
0
V
D2.9
VDDE_A9
SR P Voltage on VDDE_A (I/O supply) pin with
respect to ground (VSSE_A)
—
+3.0
+3.6
V
D2.10
VDDE_B
SR P Voltage on VDDE_B (I/O supply) pin with
respect to ground (VSSE_B)
—
+3.0
+3.6
V
D2.11
VDDM
SR P Voltage on VDDM (stepper motor supply) pin
with respect to ground (VSSM)
—
+3.0
+3.6
V
D2.12
VDD_DR
P Voltage on VDDDDR with respect to VSS
—
+1.62
+3.6
V
D2.13
VSS_DR
D Voltage on VSSRSDS with respect to VSS
—
+1.62
+3.6
V
D2.14
VRSDS
P Voltage on VDDDDR with respect to VSS
—
+3.0
+3.6
V
D2.15
TVDD
up10
—
—
12
V/ms
D2.16
—
-40
+105
°C
D2.17
-40
+140
SR D VDD slope to ensure correct power
TA
SR P Ambient temperature under bias
TJ
SR D Junction temperature under bias
D2.18
1
100 nF capacitance needs to be provided between VDDA/VSSA pair.
10 μF capacitance must be connected between VDDR and VSS12 because of a sharp surge due to external ballast.
3 V
DD12 cannot be used to drive any external component.
4 Each V
DD12/VSS12 supply pair should have a 10 μF capacitor. Absolute combined maximum capacitance is 40 μF. Preferably,
all the VDD12 supply pads should be shorted and then connected to a 4×10 μF capacitance. This is to ensure the ESR of
external capacitance does not exceed 0.2 Ω. A 100 nF capacitor must be placed close to the pin.
5 V
DD refers collectively to I/O voltage supplies, i.e., VDDE_A, VDDE_B, VDD_DR, and VDDM.
6 100 nF capacitance needs to be provided between each V /V
DD SS pair. VDDmin value for is 3 V for VDDE_A & VDDM as well
as for VDDE_B, while it is 1.62 V for VDD_DR. VDD max value is 3.6 V for VDDE_A & VDDM as well as for VDDE_B &
VDD_DR.
7 Full electrical specification cannot be guaranteed when voltage drops below 3.0V. In particular, ADC electrical characteristics
and I/O’s DC electrical specification may not be guaranteed.
When voltage drops below VLVDHVL device is reset.
8 V
SS refers collectively to I/O voltage supply grounds, i.e., VSSE_A, VSS, and VSSM unless otherwise noted.
9 V
DDE_A should not be less than VDDA.
10 Guaranteed by device validation.
2
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
63
4.5
Thermal characteristics
Table 13. Recommended operating conditions (5.0 V)
Value
Symbol
VDDA1
C
Parameter
Conditions
Min
Max
+4.5
+5.5
+3.0
+5.5
Relative to VDD
VDD–0.1
VDD+0.1
SR P Voltage on VDDA pin (ADC reference) with re—
spect to ground (VSS)
D
Voltage drop2
D
Unit
SpecID
V
D2.19
VSSA
SR D Voltage on VSSA (ADC reference) pin with
respect VSS
—
VSS–0.1
VSS+0.1
V
D2.20
VDDPLL
CC P Voltage on VDDPLL (1.2 V PLL supply) pin
with respect to ground (VSSPLL)
—
1.08
1.32
V
D2.21
VDDR3
SR P Voltage on VDDR pin (regulator supply) with
—
respect to ground (VSSR)
D
Voltage drop2
+4.5
+5.5
V
D2.22
+4.5
+5.5
Relative to VDD
VDD–0.1
VDD+0.1
D
VSSR
SR D Voltage on VSSR (regulator ground) pin with
respect to VSS
—
VSS–0.1
VSS+0.1
V
D2.23
VDD124,5
CC P Voltage on VDD12 pin with respect to ground
(VSS12)
—
1.08
1.4
V
D2.24
VSS12
CC D Voltage on VSS12 pin with respect to VSS
—
VSS–0.1
VSS+0.1
V
D2.25
VDD6,7
SR P Voltage on VDD pins (VDDE_A, VDDE_B,
VDD_DR, VDDMA, VDDMB, VDDMC) with
respect to ground (VSS)
VDDmin6
VDDmax6
V
D2.26
VSS8
Voltage drop2
SR D I/O supply ground
—
0
0
V
D2.27
SR P Voltage on VDDE_A (I/O supply) pin with
respect to ground (VSSE_A)
—
+4.5
+5.5
V
D2.28
VDDE_B10 SR P Voltage on VDDE_B (I/O supply) pin with
respect to ground (VSSE_B)
—
+3.0
+3.6
V
D2.29
VDDE_A9
VDDM
SR P Voltage on VDDMA (stepper motor supply)
pin with respect to ground (VSSMA)
—
+4.5
+5.5
V
D2.30
VDD_DR11
P Voltage on VDD_DR with respect to VSS
—
+1.62
+3.6
V
D2.31
VSS_DR
D Voltage on VSSRSDS with respect to VSS
—
+1.62
+3.6
V
D2.32
VRSDS
P Voltage on VDD_DR with respect to VSS
—
+3.0
+3.6
V
D2.33
—
—
12
—
–40
+105
–40
+105
–40
+140
TVDD
TA
TJ
SR D VDD slope to ensure correct power
SR P Ambient temperature under bias
SR D Junction temperature under bias
up12
—
V/ms D2.34
°C
D2.35
—
D2.36
1
100 nF capacitance needs to be provided between VDDA/VSSA pair.
Full functionality cannot be guaranteed when voltage drops below 4.5 V. In particular, I/O DC and ADC electrical
characteristics may not be guaranteed below 4.5 V during the voltage drop sequence.
3
10 μF capacitance must be connected between VDDR and VSS12. It is recommended that this cap should be placed, as close
as possible to the DUT pin on board.
2
MPC5645S Microcontroller Data Sheet, Rev. 14
64
NXP Semiconductors
4
VDD12 cannot be used to drive any external component.
Each VDD12/VSS12 supply pair should have a 10 μF capacitor. Absolute combined maximum capacitance is 40 μF. Preferably,
all the VDD12 supply pads should be shorted and then connected to a 4×10 μF capacitance. This is to ensure the ESR of
external capacitance does not exceed 0.2 Ω. A 100 nF capacitor must be placed close to the pin.
6
VDD refers collectively to I/O voltage supplies, i.e., VDDE_A, VDDE_B, VDD_DR, VDDMA, VDDMB and VDDMC. VDDmin value for
is 4.5 V for VDDE_A & VDDM, 3 V VDDE_B, while it is 1.62 V for VDD_DR. VDD max value is 5.5 V for VDDE_A & VDDM
and 3.6 V for VDDE_B & VDD_DR.
7
100 nF capacitance needs to be provided between each VDD/VSS pair.
8
VSS refers collectively to I/O voltage supply grounds, i.e., VSSE_A, VSSE_B, VSSE_A, VSSE_E, VSSMA, VSSMB and VSSMC) unless
otherwise noted.
9
VDDE_A should not be less than VDDA.
10
VDDE_B cannot go beyond 3.6V under any operating condition.
11
VDD_DR can be 1.8, 2.5 and 3.3V (typical) based on type of SDR memory.
12
Guaranteed by device validation.
5
Table 14. Thermal characteristics for 176-pin LQFP1
Symbol
C
Parameter
Conditions
Convection2
RθJA
CC
D Junction to Ambient Natural
RθJA
CC
D Junction to Ambient Natural Convection2
Ambient2
RθJMA
CC
D Junction to
RθJMA
CC
D Junction to Ambient2
RθJB
CC
D Junction to Board3
(Top)4
RθJCtop
CC
D Junction to Case
ΨJT
CC
D Junction to Package Top Natural Convection5
Value
Unit
SpecID
Single layer board - 1s
36
°C/W
D3.1
Four layer board - 2s2p
29
°C/W
D3.2
@200 ft./min., single layer
board - 1s
28
°C/W
D3.3
@200 ft./min., Four layer
board - 2s2p
23
°C/W
D3.4
—
18
°C/W
D3.5
—
5
°C/W
D3.6
—
2
°C/W
D3.7
1
Thermal characteristics are targets based on simulation that are subject to change per device characterization.
Junction-to-Ambient Thermal Resistance determined per JEDEC JESD51-3 and JESD51-6. Thermal test board meets
JEDEC specification for this package.
3
Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board meets JEDEC specification for
the specified package.
4 Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is used
for the case temperature. Reported value includes the thermal resistance of the interface layer.
5
Thermal characterization parameter indicating the temperature difference between the package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
as Psi-JT.
2
Table 15. Thermal characteristics for 208-pin LQFP1
Symbol
C
Parameter
Conditions
Convection2
Value
Unit
SpecID
RθJA
CC
D Junction to Ambient Natural
Single layer board - 1s
34
°C/W
D3.8
RθJA
CC
D Junction to Ambient Natural Convection2
Four layer board - 2s2p
27
°C/W
D3.9
RθJMA
CC
D Junction to Ambient2
@200 ft./min., single layer
board - 1s
27
°C/W
D3.10
RθJMA
CC
D Junction to Ambient2
@200 ft./min., Four layer
board - 2s2p
22
°C/W
D3.11
RθJB
CC
D Junction to Board3
—
18
°C/W
D3.12
—
5
°C/W
D3.13
RθJCtop
CC
D Junction to Case
(Top)4
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
65
Table 15. Thermal characteristics for 208-pin LQFP1 (continued)
Symbol
ΨJT
C
CC
Parameter
D Junction to Package Top Natural Convection5
Conditions
Value
Unit
SpecID
—
2
°C/W
D3.14
1
Thermal characteristics are targets based on simulation that are subject to change per device characterization.
Junction-to-Ambient Thermal Resistance determined per JEDEC JESD51-3 and JESD51-6. Thermal test board meets JEDEC
specification for this package.
3
Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board meets JEDEC specification for
the specified package.
4
Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is used
for the case temperature. Reported value includes the thermal resistance of the interface layer.
5
Thermal characterization parameter indicating the temperature difference between the package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as
Psi-JT.
2
Table 16. Thermal characteristics for 416-pin TEPBGA1
Symbol
C
Parameter
Conditions
Convection2
Value
Unit
SpecID
RθJA
CC
D Junction to Ambient Natural
Single layer board - 1s
26
°C/W
D3.15
RθJA
CC
D Junction to Ambient Natural Convection2
Four layer board - 2s2p
18
°C/W
D3.16
RθJMA
CC
D Junction to Ambient2
@200 ft./min., single layer
board - 1s
20
°C/W
D3.17
RθJMA
CC
D Junction to Ambient2
@200 ft./min., Four layer
board - 2s2p
15
°C/W
D3.18
RθJB
CC
D Junction to Board3
—
10
°C/W
D3.19
—
6
°C/W
D3.20
—
2
°C/W
D3.21
(Top)4
RθJCtop
CC
D Junction to Case
ΨJT
CC
D Junction to Package Top Natural Convection5
1
Thermal characteristics are targets based on simulation that are subject to change per device characterization.
Junction-to-Ambient Thermal Resistance determined per JEDEC JESD51-3 and JESD51-6. Thermal test board meets
JEDEC specification for this package.
3
Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board meets JEDEC specification for
the specified package.
4 Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is used
for the case temperature. Reported value includes the thermal resistance of the interface layer.
5
Thermal characterization parameter indicating the temperature difference between the package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
as Psi-JT.
2
4.5.1
General notes for specifications at maximum junction temperature
An estimate of the chip junction temperature, TJ, can be obtained from the equation:
TJ = TA + (RθJA * PD)
Eqn. 1
where:
TA= ambient temperature for the package (oC)
RθJA= junction to ambient thermal resistance (oC/W)
PD= power dissipation in the package (W)
MPC5645S Microcontroller Data Sheet, Rev. 14
66
NXP Semiconductors
The thermal resistance values used are based on the JEDEC JESD51 series of standards to provide consistent values for
estimations and comparisons. The difference between the values determined for the single-layer (1s) board compared to a
four-layer board that has two signal layers, a power and a ground plane (2s2p), demonstrate that the effective thermal resistance
is not a constant. The thermal resistance depends on the:
•
•
•
•
Construction of the application board (number of planes)
Effective size of the board which cools the component
Quality of the thermal and electrical connections to the planes
Power dissipated by adjacent components
Connect all the ground and power balls to the respective planes with one via per ball. Using fewer vias to connect the package
to the planes reduces the thermal performance. Thinner planes also reduce the thermal performance. When the clearance
between the vias leave the planes virtually disconnected, the thermal performance is also greatly reduced.
As a general rule, the value obtained on a single-layer board is within the normal range for the tightly packed printed circuit
board. The value obtained on a board with the internal planes is usually within the normal range if the application board has:
•
•
•
One oz. (35 micron nominal thickness) internal planes
Components are well separated
Overall power dissipation on the board is less than 0.02 W/cm2
The thermal performance of any component depends on the power dissipation of the surrounding components. In addition, the
ambient temperature varies widely within the application. For many natural convection and especially closed box applications,
the board temperature at the perimeter (edge) of the package is approximately the same as the local air temperature near the
device. Specifying the local ambient conditions explicitly as the board temperature provides a more precise description of the
local ambient conditions that determine the temperature of the device.
At a known board temperature, the junction temperature is estimated using the following equation:
TJ = TB + (RθJB * PD)
Eqn. 2
where:
TB= board temperature for the package perimeter (oC)
RθJB= junction-to-board thermal resistance (oC/W) per JESD51-8S
PD= power dissipation in the package (W)
When the heat loss from the package case to the air does not factor into the calculation, an acceptable value for the junction
temperature is predictable. Ensure the application board is similar to the thermal test condition, with the component soldered to
a board with internal planes.
The thermal resistance is expressed as the sum of a junction-to-case thermal resistance plus a case-to-ambient thermal
resistance:
RθJA = RθJC + RθCA
Eqn. 3
where:
RθJA = junction to ambient thermal resistance (oC/W)
RθJC= junction to case thermal resistance (oC/W)
RθCA= case to ambient thermal resistance (oC/W)
RθJC s device related and is not affected by other factors. The thermal environment can be controlled to change the
case-to-ambient thermal resistance, RθCA. For example, change the air flow around the device, add a heat sink, change the
mounting arrangement on the printed circuit board, or change the thermal dissipation on the printed circuit board surrounding
the device. This description is most useful for packages with heat sinks where 90% of the heat flow is through the case to heat
sink to ambient. For most packages, a better model is required.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
67
A more accurate two-resistor thermal model can be constructed from the junction-to-board thermal resistance and the
junction-to-case thermal resistance. The junction-to-case thermal resistance describes when using a heat sink or where a
substantial amount of heat is dissipated from the top of the package. The junction-to-board thermal resistance describes the
thermal performance when most of the heat is conducted to the printed circuit board. This model can be used to generate simple
estimations and for computational fluid dynamics (CFD) thermal models.
To determine the junction temperature of the device in the application on a prototype board, use the thermal characterization
parameter (ΨJT) to determine the junction temperature by measuring the temperature at the top center of the package case using
the following equation:
TJ = TT + (ΨJT x PD)
Eqn. 4
where:
TT= thermocouple temperature on top of the package (oC)
ΨJT= thermal characterization parameter (oC/W)
PD= power dissipation in the package (W)
The thermal characterization parameter is measured in compliance with the JESD51-2 specification using a 40-gauge type T
thermocouple epoxied to the top center of the package case. Position the thermocouple so that the thermocouple junction rests
on the package. Place a small amount of epoxy on the thermocouple junction and approximately 1 mm of wire extending from
the junction. Place the thermocouple wire flat against the package case to avoid measurement errors caused by the cooling
effects of the thermocouple wire.
References:
Semiconductor Equipment and Materials International
805 East Middlefield Rd.
Mountain View, CA 94043
(415) 964-5111
MIL-SPEC and EIA/JESD (JEDEC) specifications are available from Global Engineering Documents at 800-854-7179 or
303-397-7956.
JEDEC specifications are available on the WEB at http://www.jedec.org.
MPC5645S Microcontroller Data Sheet, Rev. 14
68
NXP Semiconductors
4.6
EMI (electromagnetic interference) characteristics
Table 17. EMI testing specifications1 2
Symbol
Radiated
Emissions
Parameter
VEME
Conditions
Clocks
Device Configuration,
test conditions and EM
testing per standard
IEC61967-2
FOSC – 8MHz, External
Crystal
FCPU – 124MHz
FBUS – 124MHz
No PLL Frequency
Modulation
FOSC - 8MHz, External
Crystal
FCPU -124MHz
FBUS -124MHz
2% PLL Frequency
Modulation
1
2
Frequency
Range
Level
(Typ)
Unit
150 kHz – 50
MHz
19
dBµV
50 MHz –
150 MHz
30
150 MHz –
500 MHz
25
500 MHz –
1000 MHz
19
IEC Level
K
—
150 kHz – 50
MHz
15
dBµV
50 MHz –
150 MHz
24
150 MHz –
500 MHz
17
500 MHz –
1000 MHz
14
IEC Level
L
—
The reported emission level is the value of the maximum emission, rounded up to the next whole number.
IEC Level Maximum:, L is less than or equal to 24 dBµV, K is less than or equal to 30 dBµV.
4.7
4.7.1
Power management
Voltage regulator electrical characteristics
The internal voltage regulator requires an external NPN (BCP68 or NJD2873) ballast to be connected as shown in Figure 6 as
well as an external capacitance (CREG) to be connected to the device in order to provide a stable low voltage digital supply to
the device. Capacitances should be placed on the board as near as possible to the associated pins. Care should also be taken to
limit the serial inductance of the board to less than 15 nH.
For the MPC5645S microcontroller, 100 nF should be placed between each VDD12/VSS12 supply pair and also between the
VDDPLL/VSSPLL pair. Additionally, 10 μF should be placed between the VDDR pin and the adjacent VSS pin.
VDDR = 3.0 V to 3.6 V / 4.5 V to 5.5 V, TA = -40 to 105 °C, unless otherwise specified.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
69
VDDR
VRC_CTRL
VDD12
Figure 6. External NPN ballast connections
Table 18. Voltage regulator electrical characteristics
Symbol
VDDR
TJ
IREG
IL
VDD12
SR
C
Parameter
P Power supply
SR D Junction temperature
CC
CC
T Current consumption
T Output current capacity
CC D Output voltage (value @ IL = 0 @ 27°C)
SpecID
—
3.0
5.5
V
D5.1
—
-40
140
°C
D5.2
Reference included,
@ 55 °C No load
@ Full load
—
mA
D5.3
DC load current
—
450
mA
D5.4
Pre-trimming sigma
< 7 mV
—
1.330
V
D5.5
µF
D5.6
2
11
1.32
T Output voltage (value @ IL = Imax)
Post-trimming
1.145
—
4 capacitances of
10 µF each
10 * 4
D
ESR of external cap
0.05
0.2
Ω
D
1 bond wire R + 1
pad R
0.2
1
Ω
0
15
nH
D5.7
—
–30
dB
D5.8
10% to 90%
of IL (max) in
100 ns
D5.9
—
Cload = 10 µF * 4
D
@ 200 kHz @ no load
–100
D
@ DC @ 400 mA
–30
D
@ 200 kHz @ 400 mA
–30
CC D Load current transient
1
Unit
1.145
CC D Bonding Inductance for Bipolar Base Control pad
CC
Max
Post-trimming
CC D Power supply rejection @ DC @ no load
tSU
Min
P
SR D External decoupling/stability capacitor
LBOND
Conditions
T Start-up time after input supply stabilizes1
Cload = 10 µF * 4
—
Cload = 10 µF * 4
—
500
µs
D5.10
Time after the input supply to the voltage regulator has ramped up (VDDR) and the voltage regulator has asserted the Power
OK signal.
MPC5645S Microcontroller Data Sheet, Rev. 14
70
NXP Semiconductors
Table 19. Low-power voltage regulator electrical characteristics
Symbol
TJ
IREG
IL
VDD12
C
Parameter
SR D Junction temperature
CC
CC
T Current consumption
T Output current capacity
CC D Output voltage
P
Conditions
Min
Max
Unit
SpecID
—
–40
140
°C
D5.2
Reference included,
@ 55 °C No load
@ Full load
—
µA
D5.3
DC load current
—
15
mA
D5.4
Pre-trimming sigma
< 7 mV
—
1.33
V
D5.5
1.14
1.32
Post-trimming
5
600
Table 20. Ultra low-power voltage regulator electrical characteristics
Symbol
TJ
IREG
IL
VDD12
C
SR D Junction temperature
CC
CC
T Current consumption
T Output current capacity
CC D Output voltage (value @ IL = 0 @ 27°C)
P
4.7.2
Parameter
Conditions
Min
Max
Unit
SpecID
—
–40
140
°C
D5.2
Reference included,
@ 55 °C No load
@ Full load
—
µA
D5.3
DC load current
—
5
mA
D5.4
Pre-trimming sigma
< 7 mV
—
1.33
V
D5.5
1.14
1.32
Post-trimming
2
100
Voltage monitor electrical characteristics
The device implements a Power On Reset module to ensure correct power-up initialization, as well as four low voltage detectors
to monitor the VDD and the VDD12 voltage while device is supplied:
•
•
•
•
•
POR monitors VDD during the power-up phase to ensure device is maintained in a safe reset state
LVDHV3 monitors VDD to ensure device reset below minimum functional supply
LVDHV5 monitors VDD when application uses device in the 5.0V ± 10% range
LVDLVCOR monitors power domain No. 1
LVDLVBKP monitors power domain No. 0
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
71
Table 21. Low voltage monitor electrical characteristics
Symbol
C
Min
Typ
Max
Unit
SpecID
V
D5.11
CC C Power-on reset threshold
—
1.5
—
2.7
VLVDHV3H
CC C LVDHV3 low voltage detector high threshold
—
—
—
2.9
D5.12
VLVDHV3L
CC C LVDHV3 low voltage detector low threshold
—
2.5
—
—
D5.13
VLVDHV5H
CC C LVDHV5 low voltage detector high threshold
—
—
—
4.4
D5.14
VLVDHV5L
CC C LVDHV5 low voltage detector low threshold
—
3.9
—
—
D5.15
TA = 25°C,
after trimming
—
—
1.185
D5.16
1.095
—
—
D5.17
VPORH
VLVDLVCORH CC C LVDLVCOR low voltage detector high threshold
VLVDLVCORL CC C LVDLVCOR low voltage detector low threshold
1
Value2
Conditions1
Parameter
VDD = 3.3V ± 10% / 5.0V ± 10%, TA = -40 / +105°C, unless otherwise specified
All values need to be confirmed during device validation.
2
4.7.3
Low voltage domain power consumption
Table 22 provides DC electrical characteristics for significant application modes. These values are indicative values; actual
consumption depends on the application.
Table 22. DC electrical characteristics
Symbol
C
Parameter
Value2
Conditions1
Unit
Min Typ
IDDMAX2
CC D RUN mode maximum
average current
IDDRUN4
CC P RUN mode typical
average current5
IDDHALT
CC C HALT mode current6
P
IDDSTOP
CC D STOP mode current7 8
Max
—
—
295
3753
mA
fCPU = 125MHz, Dual Display Drive
with external DRAM, 416 TEPBGA
package option only
—
—
275
—
mA
fCPU = 125MHz, Single Display Drive,
no external DRAM, 176 LQFP / 208
LQFP package options
—
—
240
—
Slow internal RC oscillator (128KHz) TA = 25 oC
running
TA = 105 oC
—
17.5
23.5
—
35
45.5
Slow internal RC oscillator (128KHz) TA = –40oC
running
TA = 0oC
—
645
—
—
—
1100
—
TA =
25oC
—
1531
5500
D
TA =
55oC
—
3.8
—
D
TA = 85oC
—
9.7
—
D
P
C
TA =
105oC
— 17.67
mA
μA
mA
36.5
MPC5645S Microcontroller Data Sheet, Rev. 14
72
NXP Semiconductors
Table 22. DC electrical characteristics (continued)
Symbol
C
Parameter
Conditions
Value2
1
Unit
Min Typ
IDDSTDBY2 CC D STANDBY2 mode
current9
D
(64K SRAM on)
P
SXOSC (32KHz) ON and RTC
running
TA = –40oC
—
470
—
TA = 0 C
—
480
—
TA = 25oC
o
—
481
490
o
—
525
—
o
TA = 55 C
D
Max
D
TA = 85 C
—
650
—
P
TA = 105oC
—
870
910
TA = –40oC
—
63
—
CC D
SXOSC (32KHz) and RTC OFF
o
D
TA = 0 C
—
85
—
TA =
25oC
—
93
100
D
TA =
55oC
—
95
—
D
TA = 85oC
P
—
190
—
TA =
105oC
—
390
430
TA =
–40oC
—
415
—
TA = 0oC
—
422
—
TA = 25oC
—
426
430
TA =
55oC
—
575
—
D
TA =
85oC
—
680
—
P
TA = 105oC
—
810
915
TA = –40oC
P
IDDSTDBY1 CC D STANDBY1 mode
current
D
(8K SRAM on)10
P
SXOSC (32KHz) ON and RTC
running
D
—
20
—
TA =
0oC
—
22
—
TA =
25oC
—
29
75
D
TA =
55oC
—
47
—
D
TA = 85oC
—
118
—
—
236
410
CC D
D
P
P
SXOSC (32 KHz) and RTC OFF
TA =
105oC
μA
μA
μA
μA
1
VDD = 3.0V to 5.5V, TA = -40 to 105 °C, unless otherwise specified.
IDDMAX is composed of the current consumption on all supplies (VDD12, VDDE_A, VDDE_B, VDDA, VDDR, VDDM, VDDPLL, VDD_DR).
It does not include current consumption linked to I/Os toggling which is highly dependent on the application. The given value
is thought to be a worst case value with all peripherals running, and code fetched from code flash while modify operation
on-going on data flash. It is to be noticed that this value can be significantly reduced by application; switch-off not used
peripherals (default), reduce peripheral frequency through internal prescaler, fetch from RAM most used functions, use low
power mode when possible.
3 Higher current may be sinked by device during power-up and standby exit. Please refer to inrush current in Table 23.
4 RUN current measured with typical application and accesses on both flash and RAM.
5 Data and Code Flash in Normal Power. Code fetched from RAM: DCUs running with 20MHz pixel clock, QuadSPI fetching data
at 80MHz, GPU accessing internal SRAM and external DRAM, DMA, RLE, and VIU active, Serial IPs CAN and LIN in loop
back mode, DSPI as Master, PLL as system Clock (4 x Multiplier) peripherals on (eMIOS/ADC/SMD/SSD/SGM) and running
at max frequency, periodic SW/WDG timer reset enabled.
2
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
73
6
Flash in Low Power. RC-osc128KHz & RC-OSC 16MHzon. 10MHz XTAL clock.FlexCAN: instances: 0, 1ON (clocked but no
reception or transmission), LINFLEX: instances 0, 1, 2 ON (clocked but no reception or transmission). eMIOS: instance: 0, 1
ON - 16 channels on with PWM20KHz. DSPI: instance: 0 (clocked but no communication). DCUs, TCON, VIU, GPU clock
gated, RTC/API ON.PIT ON. STM ON. ADC ON but not converting.
7
For Tj > 105 0C , HPvreg needs to be kept ON. The consumption increases beyond this temperature and to handle the extra
current, HPvreg should be ON.
8
No clock, RC 16MHz off, RCI 128KHz on, PLL off, HPvreg off, ULPVreg/LPVreg on. All possible peripherals off and clock
gated. Flash in power down mode.
9
ULPreg ON, HP/LPVreg off, 64KB RAM on, device configured for minimum consumption, all possible modules switched-off.
10
ULPreg ON, HP/LPVreg off, 8KB RAM on, device configured for minimum consumption, all possible modules switched-off.
4.8
DC electrical specifications
4.8.1
DC specification for CMOS090LP2 library @ VDDE = 3.3 V
NOTE
These pad specifications are applicable for pads in the Digital segment Only. See the "GPIO
power bank supplies and functionality" table in the "Voltage Regulators and Power
Supplies" chapter of the reference manual for details.
Table 23. DC electrical specifications
Value
Symbol
C
Parameter
Condition
Min
Max
Unit
SpecID
Vdd
SR P Core supply voltage
—
1.08
1.32
V
D9.1
Vdde
SR P I/O supply voltage
—
3.0
3.6
V
D9.2
Vdd33
SR P I/O pre-driver supply voltage
—
3.0
3.6
V
D9.3
Vih_c
SR P CMOS input buffer high
voltage
With hysteresis enabled
0.65×Vdde
Vdde+0.3
V
D9.4
With hysteresis disabled
0.55×Vdde
Vdde+0.3
SR P CMOS input buffer low
voltage
With hysteresis enabled
Vss–0.3
0.35×Vdde
V
D9.5
With hysteresis disabled
Vss–0.3
0.40×Vdde
—
0.1×Vdde
—
V
D9.6
Vil_c
Vhys_c
SR
T CMOS input buffer hysteresis
Vih_fod_h
SR P 5 V tolerant CMOS input
buffer high voltage
With hysteresis enabled 0.65×Vdd33
Vdd33+0.3
V
D9.7
Vil_fod_h
SR P 5 V tolerant CMOS input
buffer low voltage
With hysteresis enabled
Vss–0.3
0.35×Vdd33
V
D9.8
—
25
150
μA
D9.9
Weak pull inactive
–2.5
2.5
μA
D9.10
Iact_s
Iinact_d
SR
T Selectable weak
pullup/pulldown current
SR P Digital pad input leakage
current
MPC5645S Microcontroller Data Sheet, Rev. 14
74
NXP Semiconductors
Table 23. DC electrical specifications (continued)
Value
Symbol
Iinact_a
C
Parameter
Condition
Min
Max
Unit
SpecID
SR P Analog pad input leakage
current
Weak pull inactive
–150
150
nA
D9.11
Voh
SR P Output high voltage
Refer to Table 24
0.8 ×Vdde
—
V
D9.12
Vol
SR P Output low voltage
Refer to Table 24
—
0.2×Vdde
V
D9.13
SR C Fast open-drain output low
voltage
Iol_fod_h = 10 mA
—
0.2×Vdd33
—
D9.16
Vol_fod_h
Table 24. Drive current, VDDE=3.3 V (+/- 10%)
1
2
Pad
C
Drive mode
Minimum Ioh (mA)1
Minimum Iol (mA)2
pad_fc
C
00
16.1
24
01
31.8
47.9
10
47.2
70.6
11
77
114.5
pad_msr
C
All
61.9
83.6
pad_ssr
C
All
61.9
83.6
Ioh is defined as the current sourced by the pad to drive the output to Voh.
Iol is defined as the current sunk by the pad to drive the output to Vol.
Table 25. Supply leakage
Pad
C
VDD
VDDE
(Typ/Max)
VDD33
(Typ/Max)
pad_fc
D
90 μA
3 nA / 4 μA
1 nA / 30 μA
pad_msr
—
—
—
pad_ssr
—
—
—
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
75
4.8.2
DC specification for CMOS090LP2fg library @ VDDE = 5.0 V
NOTE
These pad specifications are applicable for pads in the Analog segment Only. See the
"GPIO power bank supplies and functionality" table in the "Voltage Regulators and Power
Supplies" chapter of the reference manual for details.
Table 26. DC electrical specifications
Value
Symbol
C
Parameter
Condition
Min
Max
Unit
SpecID
Vdd
SR P Core supply voltage
—
1.08
1.32
V
D9.17
Vdde
SR P I/O supply voltage
—
4.5
5.5
V
D9.18
Vdd33
SR P I/O pre-driver supply voltage
—
3.0
3.6
V
D9.19
Vih_hys
SR P CMOS input buffer high
voltage
With hysteresis enabled
0.65×Vdde
Vdde+0.3
V
D9.20
Vil_hys
SR P CMOS input buffer low
voltage
With hysteresis enabled
Vss–0.3
0.35×Vdde
V
D9.21
Vih
SR P CMOS input buffer high
voltage
With hysteresis disabled
0.55×Vdde
Vdde+0.3
V
D9.22
Vil
SR P CMOS input buffer low
voltage
With hysteresis disabled
Vss–0.3
0.40×Vdde
V
D9.23
—
0.1×Vdde
—
V
D9.24
Vhys
SR
T CMOS input buffer hysteresis
Pull_Ioh
SR P Weak pullup current
—
35
135
μA
D9.25
Pull_Iol
SR P Weak pulldown current
—
35
200
μA
D9.26
Iinact_d
SR P Digital pad input leakage
current
Weak pull inactive
–2.5
2.5
μA
D9.27
Iinact_a
SR P Analog pad input leakage
current
Weak pull inactive
–150
150
nA
D9.28
Voh
SR P Slew rate controlled output
high voltage
—
0.8×Vdde
—
V
D9.29
Vol
SR P Slew rate controlled output
low voltage
—
—
0.2×Vdde
V
D9.30
SR C Low swing output pad output
high voltage
—
2.64
—
V
D9.31
Ioh_msr
SR C pad_msr_hv Ioh
—
11.6
40.7
mA
D9.32
Iol_msr
SR C pad_msr_hv Iol
—
17.7
68.2
mA
D9.33
Ioh_ssr
SR C pad_ssr_hv Ioh
—
6.0
21.3
mA
D9.34
Iol_ssr
SR C pad_ssr_hv Iol
—
9.2
36.3
mA
D9.35
Rtgate
SR D Pad_tgate_hv input
resistance
—
250
800
Ω
D9.39
Voh_ls
MPC5645S Microcontroller Data Sheet, Rev. 14
76
NXP Semiconductors
Table 27. DC electrical specifications
Value
Symbol
Parameter
Condition
Min
Max
Unit
SpecID
Vdd
SR Core supply voltage
—
1.08
1.32
V
D9.45
Vdde
SR I/O supply voltage
—
3.0
3.6
V
D9.46
Vdd33
SR I/O pre-driver supply voltage
—
3.0
3.6
V
D9.47
Vih_hys
SR CMOS input buffer high
voltage
With hysteresis enabled
0.65×Vdde
Vdde+0.3
V
D9.48
Vil_hys
SR CMOS input buffer low
voltage
With hysteresis enabled
Vss–0.3
0.35×Vdde
V
D9.49
Vih
SR CMOS input buffer high
voltage
With hysteresis disabled
0.55×Vdde
Vdde+0.3
V
D9.50
Vil
SR CMOS input buffer low
voltage
With hysteresis disabled
Vss–0.3
0.40×Vdde
V
D9.51
SR CMOS input buffer hysteresis
—
0.1×Vdde
—
V
D9.52
Pull_Ioh
SR Weak pullup current
—
15
70
μA
D9.53
Pull_Iol
SR Weak pulldown current
—
15
95
μA
D9.54
Iinact_d
SR Digital pad input leakage
current
Weak pull inactive
–2.5
2.5
μA
D9.55
Iinact_a
SR Analog pad input leakage
current
Weak pull inactive
–150
150
nA
D9.56
Voh
SR Slew rate controlled output
high voltage
—
0.8×Vdde
—
V
D9.57
Vol
SR Slew rate controlled output
low voltage
—
—
0.2×Vdde
V
D9.58
Ioh_msr
SR pad_msr_hv Ioh
—
5.4
21
mA
D9.59
Iol_msr
SR pad_msr_hv Iol
—
8.1
38.6
mA
D9.60
Ioh_ssr
SR pad_ssr_hv Ioh
—
2.8
11.2
mA
D9.61
Iol_ssr
SR pad_ssr_hv Iol
—
4.2
20.6
mA
D9.62
Rtgate
SR Pad_tgate_hv input
resistance
—
325
1250
Ω
D9.65
Vhys
Table 28. Supply leakage
VDD
VDDE
VDD33
Pad
Typ
Max
Typ
Max
Typ
Max
pad_msr_hv
0.818 nA
83.7 nA
0.81 nA
118 nA
—
—
pad ssr_hv
0.818 nA
83.7 nA
0.858 nA
88.7 nA
—
—
pad_i_hv
0.307 nA
48.4 nA
88.2 pA
30 nA
—
—
biasref_hv
—
—
—
—
—
—
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
77
Table 28. Supply leakage (continued)
VDD
VDDE
VDD33
Pad
Typ
Max
Typ
Max
Typ
Max
core_v_det_hv
0
0
—
—
0
0
core_v_det_lp_hv
0
0
—
—
—
—
corner_esdpadcell_hv
—
—
—
—
—
—
corner_esdpadcell_id00_hv
—
—
—
—
—
—
corner_esdpadcell_id11_hv
—
—
—
—
—
—
corner_esdpadcell_lp_hv
—
—
—
—
—
—
esd_term_35_84_hv
—
—
—
—
—
—
pad_9v_hv
0
0
—
—
—
—
pad_ae_hv
—
—
—
—
—
—
pad_esdspacer_hv
—
—
—
—
—
—
pad_tgate_hv
—
—
—
—
—
—
pad_vdd33_hv
—
—
—
—
—
—
pad_vdde_hv
0
0
—
—
0
0
pad_vddint3v_hv
0
0
—
—
0
0
pad_vddint_hv
0
0
—
—
—
—
pad_vss_hv
0
0
—
—
—
—
pad_vsse_hv
0
0
—
—
—
—
pad_vssint3v_hv
0
0
—
—
—
—
pad_vssint_hv
0
0
—
—
—
—
spcr_17_82_hv
—
—
—
—
—
—
spcr_35_84_hv
—
—
—
—
—
—
spcr_71_88_hv
—
—
—
—
—
—
spcr_143_38_hv
—
—
—
—
—
—
spcr_vdde_lvl_hv
—
—
—
—
—
—
Table 29. AVG IDDE specifications
Cell
Period (ns)
Load (pF)1
VDDE (V)
Drive/slew select
IDDE (mA)
pad_msr_hv2
24
50
5.5
11
14
62
50
5.5
01
5.3
317
50
5.5
00
1.1
425
200
5.5
00
3
MPC5645S Microcontroller Data Sheet, Rev. 14
78
NXP Semiconductors
Table 29. AVG IDDE specifications (continued)
1
2
Cell
Period (ns)
Load (pF)1
VDDE (V)
Drive/slew select
IDDE (mA)
pad_ssr_hv2
37
50
5.5
11
9
130
50
5.5
01
2.5
650
50
5.5
00
0.5
840
200
5.5
00
1.5
All loads are lumped loads.
Average current is for pad configured as output only. Use pad_i current for input.
4.8.3
DC specification for CMOS090_ddr library @ VDDE = 3.3 V
Table 30. DC electrical specifications at 3.3 V VDDE
Value
Symbol
Parameter
Min
Max
Unit
SpecID
Vdd
SR Core supply voltage
1.08
1.32
V
D9.71
Vdde
SR I/O supply voltage
3.0
3.6
V
D9.72
Vdd33
SR I/O pre-driver supply voltage
3.0
3.6
V
D9.73
Vref
SR Input reference voltage
1.3
1.7
V
D9.74
Vtt
SR Termination voltage
Vref–0.05
Vref+0.05
V
D9.75
Vih
SR Input high voltage
Vref+0.20
—
V
D9.76
Vil
SR Input low voltage
—
Vref–0.2
V
D9.77
Voh
SR Output high voltage
Vtt+0.8
—
V
D9.78
Vol
SR Output low voltage
—
Vtt–0.8
V
D9.79
Table 31. Output drive current @ VDDE = 3.3 V (+/-10%)
Pad
C
Drive mode
Minimum Ioh (mA)
Minimum Iol (mA)
pad_st_acc
D
111
–16
16
pad_st_dq
D
111
–16
16
pad_st_clk
D
111
–16
16
pad_st
D
111
–16
16
pad_st_odt
D
111
–16
16
pad_st_ck
D
111
–16
16
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
79
4.8.4
DC specification for CMOS090_ddr library @ VDDE = 2.5 V
Table 32. DC electrical specifications at 2.5 V VDDE
Value
Symbol
C
Parameter
Min
Max
Unit
SpecID
Vdd
SR
P
Core supply voltage
1.08
1.32
V
D9.80
Vdde
SR
P
I/O supply voltage
2.3
2.7
V
D9.81
Vdd33
SR
P
I/O pre-driver supply voltage
3.0
3.6
V
D9.82
Vref
SR
P
Input reference voltage
0.49×Vdde
0.51×Vdde
V
D9.83
Vtt
SR
P
Termination voltage
Vref–0.04
Vref+0.04
V
D9.84
Vih
SR
P
Input high voltage
Vref+0.15
—
V
D9.85
Vil
SR
P
Input low voltage
—
Vref–0.15
V
D9.86
Voh
SR
P
Output high voltage
Vtt+0.81
—
V
D9.87
Vol
SR
P
Output low voltage
—
Vtt–0.81
V
D9.88
Table 33. Output drive current @ VDDE = 2.5 V (+/-200mV)
Pad
C
Drive mode
Minimum Ioh (mA)
Minimum Iol (mA)
Libraries
pad_st_acc
D
011
–16.2
16.2
6MDDR
pad_st_dq
D
011
–16.2
16.2
6MDDR
pad_st_ck
D
011
–16.2
16.2
6MDDR
MPC5645S Microcontroller Data Sheet, Rev. 14
80
NXP Semiconductors
4.8.5
DC specification for CMOS090_ddr library @ VDDE = 1.8 V
Table 34. DC electrical specifications for 1.8 V VDDE
Value
Symbol
C
Parameter
Min
Max
Unit
SpecID
Vdd
SR
P
Core supply voltage
1.08
1.32
V
D9.89
Vdde
SR
P
I/O supply voltage
1.7
1.9
V
D9.90
Vdd33
SR
P
I/O pre-driver supply voltage
3.0
3.6
V
D9.91
Vref
SR
P
Input reference voltage
0.49×Vdde
0.51×Vdde
V
D9.92
Vtt
SR
P
Termination voltage
Vref–0.04
Vref+0.04
V
D9.93
Vih
SR
P
Input high voltage
Vref+0.125
—
V
D9.94
Vil
SR
P
Input low voltage
—
Vref–0.125
V
D9.95
Voh
SR
P
Output high voltage
Vtt+0.81
—
V
D9.96
Vol
SR
P
Output low voltage
—
Vtt–0.81
V
D9.97
Table 35. Output drive current @ VDDE = 1.8 V (+/-100mV)
Pad
pad_st_acc
pad_st_dq
pad_st_clk
D
D
D
Drive mode
Minimum Ioh (mA)
Minimum Iol (mA)
Libraries
000
–3.57
3.57
6MDDR
001
–7.84
7.84
010
–5.36
5.36
110
–13.4
13.4
000
–3.57
3.57
001
–7.84
7.84
010
–5.36
5.36
110
–13.4
13.4
000
–3.57
3.57
001
–7.84
7.84
010
–5.36
5.36
110
–13.4
13.4
6MDDR
6MDDR
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
81
Table 36. ODT DC electrical characteristics
Value
Symbol
Rtt
SR
C
Parameter
Condition
Unit SpecID
C Effective impedance Rainbow supports only 150
value
ohm termination and that
can be enabled by enabling
any bit of the termination
control register (all of them
are OR’ed).
Min
Typ
Max
120
150
180
Ω
D9.98
Table 37. core_v_det_odt and core_v_det33_odt specifications
VDDE
C
VDD
Vtrip max (V)
Vtrip min
Hysteresis min (V)
3.5
C
Rising
0.79
0.44
0.07
C
Falling
0.56
0
C
Rising
0.65
0.3
C
Falling
0.33
0
C
0.0
1.40
0.3
1.62
Rising
4.8.6
0.16
—
SMD Characteristics
Table 38. SMD pad electrical characteristics
Value
Symbol
C
Parameter
Conditions
Unit
Min
Typ
Max
VIL
CC P Low level input voltage
—
–0.4
—
0.35×VDDM
VIH
CC P High level input voltage
—
0.65×VDDM
—
VDDM+0.4
CC C Schmitt trigger hysteresis
—
0.1×VDDM
—
—
CC P Low level output voltage
IOL = 20
mA1
—
—
0.32
IOL = 30
mA2
—
—
0.48
IOH = –20 mA1
VDDM–0.32
—
—
IOH = –30 mA2
VDDM–0.48
—
—
VHYST
VOL
VOH
CC P High level output voltage
V
MPC5645S Microcontroller Data Sheet, Rev. 14
82
NXP Semiconductors
Table 38. SMD pad electrical characteristics (continued)
Value
Symbol
IPU
IPD
IIN
C
Parameter
Conditions
CC P Internal pull-up device current
CC P Internal pull-down device
current
CC P Input leakage current
2
Typ
Max
Vin=VIL
–130
—
—
Vin=VIH
—
—
0
Vin=VIL
0
—
—
Vin=VIH
—
—
130
–1
—
1
—
μA
RDSONH
CC C SMD pad driver active high
impedance
IOH ≤ –30 mA2
—
—
16
Ω
RDSONL
CC C SMD pad driver active low
impedance
IOL ≤ 30 mA2
—
—
16
Ω
IOH / IOL ≤ 30 mA2
—
—
90
mV
VOMATCH CC C Output driver matching
VOH / VOL
1
Unit
Min
VDD = 5.0 V ±10%, Tj = –40 to +140 °C.
VDD = 5.0 V ±10%, Tj = –40 to +120 °C.
VDD/2
Pad
Data Input
Rising
Edge
Output
Delay
Falling
Edge
Output
Delay
VOH
VOL
Pad
Output
Figure 7. Pad output delay
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
83
Table 39. SMD pad delays
Value
Symbol
—
Parameter
CC D SMD pad delay
—
4.9
C
CC D SMD pad delay
Conditions
Unit
Min
Typ
Max
CL=50pf
VDD=5V±10%
SRE=1
—
—
165
ns
CL=50pf
VDD=5V±10%
SRE=0
—
—
35
ns
CL=50pf
VDD=3.3V±10%
SRE=1
—
—
350
ns
CL=50pf
VDD=3.3V±10%
SRE=0
—
—
50
ns
SSD Characteristics
Table 40. SSD electrical characteristics
Value1
Symbol
C
Parameter
Unit
Min
Typ
Max
VDDM/2 – 0.03
VDDM/2
VDDM/2 + 0.03
V
VVREF
CC P Reference voltage (IVREF = 0)
IVREF
CC P Reference voltage output current
1.85
—
—
mA
RIN
CC D Input resistance (against VDDM/2)
0.8
1.0
1.2
MΩ
VIN
CC C Input common mode range
VSSM
—
VDDM
V
SSDCONST
CC C SSD constant
0.549
0.572
0.597
—
SSDOFFSET
CC C SSD offset (unipolar, Nsample =
256)
–9
—
9
counts
SSD offset (bipolar, Nsample = 256)
–8
—
8
SSD offset (bipolar with offset
cancellation, Nsample = 256)
–5
—
5
0.5
—
2.0
fSSDSMP
1
4.10
CC D SSD cmpout sample rate
MHz
Vdd = 5.0V ±10%, Tj = –40 to +140 °C.
RESET electrical characteristics
The device implements a dedicated bidirectional RESET pin.
MPC5645S Microcontroller Data Sheet, Rev. 14
84
NXP Semiconductors
Figure 8. Startup reset requirements
VRESET
hw_rst
VDD
‘
VIH
VIL
‘
filtered by
hysteresis
filtered by
lowpass filter
WFRST
filtered by
lowpass filter
unknown reset
state
device under hardware reset
WFRST
WNFRST
Figure 9. Noise filtering on reset signal
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
85
Table 41. Reset electrical characteristics
Symbol
C
Parameter
Value2
Conditions1
Unit SpecID
Min
Typ
Max
VIH
SR
P Input High Level CMOS
Schmitt Trigger
—
0.65VDD
—
VDD+0.4
V
D8.1
VIL
SR
P Input low Level CMOS
Schmitt Trigger
—
-0.4
—
0.35VDD
V
D8.2
—
0.1VDD
—
—
V
D8.3
Push Pull, IOL = 2mA,
VDD = 5.0V ± 10%, ipp_hve =
0
(recommended)
—
—
0.1VDD
V
D8.4
D
Push Pull, IOL = 1mA,
VDD = 5.0V ± 10%, ipp_hve =
15
—
—
0.1VDD
C
Push Pull, IOL = 1mA,
VDD = 3.3V ± 10%, ipp_hve =
1 (recommended)
—
—
0.5
T Output transition time output pin6
MEDIUM configuration
CL = 25pF,
VDD = 5.0V ± 10%, ipp_hve =
0
—
—
10
ns
D8.5
CL = 50pF,
VDD = 5.0V ± 10%, ipp_hve =
0
—
—
20
CL = 100pF,
VDD = 5.0V ± 10%, ipp_hve =
0
—
—
40
CL = 25pF,
VDD = 3.3V ± 10%, ipp_hve =
1
—
—
12
CL = 50pF,
VDD = 3.3V ± 10%, ipp_hve =
1
—
—
25
CL = 100pF,
VDD = 3.3V ± 10%, ipp_hve =
1
—
—
40
VHYS
VOL
Ttr
CC3 D Input hysteresis CMOS
Schmitt Trigger
CC4 P Output low level
CC4
WFRST
SR
T RESET Input Filtered Pulse
—
—
—
70
ns
D8.6
WNFRST
SR
T RESET Input Not Filtered
Pulse
—
400
—
—
ns
D8.7
|IWPU|
CC4
T Weak pull-up current absolute value
—
10
—
—
µA
D8.8
1
VDD = 3.3V ± 10% / 5.0V ± 10%, TA = -40 / +105oC, unless otherwise specified.
All values need to be confirmed during device validation.
3 Data based on characterization results, not tested in production.
2
MPC5645S Microcontroller Data Sheet, Rev. 14
86
NXP Semiconductors
4
Guaranteed by design simulation.
This is a transient configuration during power-up, up to the end of reset PHASE2 (refer to RGM module section of the reference
manual).
6
CL calculation should include device and package capacitance (CPKG < 5pF).
5
4.11
Fast external crystal oscillator (4–16 MHz) electrical
characteristics
This device implements the fast external oscillator (FXOSC) using a low power Loop Controlled Pierce Oscillator (LCP)
configuration.
Table 42. Fast external crystal oscillator electrical characteristics
Value
Symbol
Parameter
Conditions
fOSC
C
Crystal oscillator range
iOSC
D
Startup current
16
MHz
O9.1
—
µA
O9.2
ms
O9.3
2.5
s
O9.4
Max
Loop controlled Pierce
4.0
—
—
100
—
Loop controlled Pierce
—
41
2
C
Oscillator start-up time
tCQOUT
D
Clock quality check time-out
—
0.45
fCMFA
D
Clock monitor failure assert
frequency
—
200
400
800
kHz
O9.5
fEXT
D
External square wave input
frequency2
—
2.0
—
50
MHz
O9.6
tEXTL
D
External square wave pulse
width low
—
9.5
—
—
ns
O9.7
tEXTH
D
External square wave pulse
width high
—
9.5
—
—
ns
O9.8
tEXTR
D
External square wave rise time
—
—
—
1
ns
O9.9
tEXTF
D
External square wave fall time
—
—
—
1
ns
O9.10
CIN
D
Input capacitance
EXTAL and XTAL pins
—
7
—
pF
O9.11
—
0.75×
VDDPLL
—
—
V
O9.12
—
—
VDDPLL
+0.3
—
—
0.25×
VDDPLL
V
O9.13
VSSPLL0.3
—
—
—
—
180
—
mV
O9.14
Loop controlled Pierce
—
1.0
—
V
O9.15
P
EXTAL pin input high
voltage2
T
VIL,EXTAL
P
EXTAL pin input low voltage2
—
T
1
SpecID
Typ
tUPOSC
VIH,EXTAL
2
Unit
Min
VHYS,EXTAL
C
EXTAL pin input hysteresis2
VPP,EXTAL
C
EXTAL pin oscillation amplitude
50
fOSC = 4 MHz, C = 22 pF.
Maximum value is for extreme cases using high Q, low frequency crystals.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
87
4.12
Slow external crystal oscillator (32 KHz) electrical characteristics
The device provides a slow external oscillator/resonator driver (SXOSC).
PC[15]
PC[15]
Resonator
Crystal
CX
RF
PC[14]
PC[14]
CY
DEVICE
DEVICE
Figure 10. Crystal oscillator and resonator connection scheme
NOTE
PC[14]/PC[15] must not be directly used to drive external circuits.
VDD
VDDMIN
VXTAL
1/fXOSCLP
VXOSCLP
90%
10%
TXOSCLPSU
valid internal clock
Figure 11. Slow external crystal oscillator electrical characteristics
MPC5645S Microcontroller Data Sheet, Rev. 14
88
NXP Semiconductors
Table 43. Slow external crystal oscillator electrical characteristics
Symbol
C
SR
fXOSCLP
3
VXOSCLP CC
3
TXOSCLPS CC
Unit SpecID
Min
Typ
Max
C Oscillator frequency
—
32
—
40
kHz
O10.1
C Oscillation amplitude
VDDA=3.3V±10%,
VDDE_A=3.3V±10%
1.12
1.33
1.74
V
O10.2
VDDA=5.0V±10%,
VDDE_A=5.0V±10%
1.12
1.37
1.74
—
—
—
5
µA
O10.3
D Oscillator start-up time
—
—
—
2
s
O10.4
CC3 D Oscillator consumption
IXOSCLP
Value2
Conditions1
Parameter
U
VIH
SR
C Input high level CMOS
Schmitt Trigger
Oscillator bypass mode
0.65VDDA
0.65VDDE_A
—
VDDA+0.4
VDDE_A+0.4
V
O10.5
VIL
SR
C Input low level CMOS
Schmitt Trigger
Oscillator bypass mode
VSS–0.4
—
0.35VDDA
0.35VDDE_A
V
O10.6
1
VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = -40 to +105 °C, unless otherwise specified.
All values need to be confirmed during device validation.
3
Granted by device validation.
2
4.13
FMPLL electrical characteristics
The device provides a frequency-modulated phase-locked loop (FMPLL) module to generate a fast system clock from the fast
external oscillator driver.
Table 44. FMPLL electrical characteristics
Symbol
fPLLIN
SR
C
Value2
Conditions1
Parameter
T PLL reference clock3
cycle3
Unit SpecID
Min
Typ
Max
—
4
—
120
—
47.5
—
52.5
MHz O11.1
ΔPLLIN
SR
fPLLOUT
CC4
T PLL output clock frequency
—
15
—
2505
fCPU
CC4
T System clock frequency
—
—
—
1256 MHz O11.4
TLOCK
CC4
T PLL lock time
Stable oscillator (fPLLIN = 10 MHz)
—
—
100
µs
O11.5
ΔTPKJIT
CC4
T PLL jitter
fPLLOUT (PHI i.e. FMPLL O/P) = –509
15.625 MHz @ 10 MHz resonator
—
509
ps
O11.6
ΔTLTJIT
CC4
T PLL long term jitter
IPLL
CC7
D Current Consumption (Normal
Mode for Analog Supply)
T PLL reference clock duty
%
O11.2
MHz O11.3
fPLLIN = 10 MHz (resonator)
–2.4
—
2.4
ns
O11.7
TA = 25°C
—
—
500
µA
O11.8
1
VDDPLL = 1.2 V ± 10%, TA = -40 to +105 °C, unless otherwise specified.
All values need to be confirmed during device validation.
3
PLLIN clock retrieved directly from XOSCHS clock. Input characteristics are granted when oscillator is used in functional
mode. When bypass mode is used, oscillator input clock should verify fPLLIN and ΔPLLIN.
2
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
89
4
Data based on device simulation.
2x sys clock required for generation of DDR timing.
6
fCPU of 125 MHz can be achieved only at temperatures up to 105 °C with a maximum FM depth of 2%.
7
Data based on characterization results, not tested in production
5
4.14
Fast internal RC oscillator (16 MHz) electrical characteristics
The device provides a fast internal RC oscillator (FIRC). This is used as the default clock at the power-up of the device.
Table 45. Fast internal oscillator electrical characteristics
Symbol
C
Parameter
Conditions
Value2
1
Unit SpecID
Min
Typ
Max
CC3 P RC oscillator high frequency
TA = 25 °C, trimmed
—
16
—
IRCMRUN
CC3 D RC oscillator high frequency current in running mode
TA = 25 °C, trimmed
—
—
200
µA
O12.2
IRCMPWD
CC3 D RC oscillator high frequency current in power TA = 25 °C
down mode
—
—
10
µA
O12.3
–5
—
+5
%
O12.5
fRCM
ΔRCMVAR CC4 C RC oscillator variation in temperature and
supply with respect to fRC at TA = 55 °C in
high-frequency configuration
—
MHz O12.1
1
VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = -40 to +105 °C, unless otherwise specified.
All values need to be confirmed during device validation.
3 Guaranteed by device simulation, not tested in production.
4 Guaranteed by device characterization, not tested in production.
2
4.15
Slow internal RC oscillator (128 kHz) electrical characteristics
The device provides a slow internal RC oscillator (SIRC). This can be used as the reference clock for the RTC module.
Table 46. Slow internal RC oscillator electrical characteristics
Symbol
C
Parameter
Value2
Conditions1
Unit SpecID
Min
Typ
Max
fRCL
CC3 P RC oscillator low frequency
TA = 25 °C, trimmed
—
128
—
kHz
O13.1
IRCL
CC3
D RC oscillator low frequency current
TA = 25 °C, trimmed
—
—
5
µA
O13.2
ΔRCLVAR
CC3
C RC oscillator variation in temperature and High frequency configsupply with respect to fRC at TA = 55 °C in uration
high frequency configuration
–10
—
+10
%
O13.4
3
1
VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = -40 to +105 °C, unless otherwise specified.
All values need to be confirmed during device validation.
3 Guaranteed by device simulation, not tested in production
2
MPC5645S Microcontroller Data Sheet, Rev. 14
90
NXP Semiconductors
4.16
Flash memory electrical characteristics
Table 47. Program and erase specifications
Symbol
C
Parameter
Min
Value
Typical
Value1
Initial
Max2
Max3
Unit
SpecID
Tdwprogram
C Double Word (64 bits) Program Time4
—
—
22
500
μs
D14.1
T16kpperase
C 16 KB Block Pre-program and Erase Time
—
—
1000
5000
ms
D14.2
T64kpperase
C 64 KB Block Pre-program and Erase Time
—
—
1800
5000
ms
D14.3
T128kpperase
C 128 KB Block Pre-program and Erase Time
—
—
2600
7500
ms
D14.4
T256kpperase
C 256 KB Block Pre-program and Erase Time
—
—
5200
15000
ms
D14.5
1
Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change
pending device characterization.
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
3 The maximum program & erase times occur after the specified number of program/erase cycles. These maximum values are
characterized but not guaranteed.
4 Actual hardware programming times. This does not include software overhead.
Table 48. Flash module life
Value
Symbol
C
Parameter
Min
Typ
Unit
SpecID
P/E
C Number of program/erase cycles per block
for 16 KB, 48KB and 64KB blocks, across
full operating temperature range (Tj)
—
100,000
—
P/E
cycles
D14.6
P/E
C Number of program/erase cycles per block
for 128KB and 256KB blocks, across full
operating temperature range (Tj)
—
1, 000
100,000
P/E
cycles
D14.7
Blocks with 0 - 1,000 P/E
cycles
20
—
Years
D14.8
Blocks with 1,001 10,000 P/E cycles
10
—
Years
Blocks with 10,001 100,000 P/E cycles
5
—
Years
Data
C Minimum data retention at 85 °C average
retention
ambient temperature1
1
Conditions
Ambient temperature averaged over duration of application, not to exceed recommended product operating temperature
range.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
91
4.17
ADC parameters
The device provides a 10-bit Successive Approximation Register (SAR) Analog to Digital Converter.
Offset Error OSE
Gain Error GE
1023
1022
1021
1020
1019
1 LSB ideal = VDDA / 1024
1018
(2)
code out
7
(1)
6
(1) Example of an actual transfer curve
5
(5)
(2) The ideal transfer curve
(3) Differential non-linearity error (DNL)
4
(4) Integral non-linearity error (INL)
(4)
(5) Center of a step of the actual transfer curve
3
(3)
2
1
1 LSB (ideal)
0
1
2
3
4
5
6
7
1017 1018 1019 1020 1021 1022 1023
Vin(A) (LSBideal)
Offset Error OSE
Figure 12. ADC Characteristics and Error Definitions
MPC5645S Microcontroller Data Sheet, Rev. 14
92
NXP Semiconductors
4.17.1
Input Impedance and ADC Accuracy
In the following analysis, the input circuit corresponding to the precise channels is considered.
To preserve the accuracy of the A/D converter, it is necessary that analog input pins have low AC impedance. Placing a capacitor
with good high frequency characteristics at the input pin of the device can be effective: the capacitor should be as large as
possible, ideally infinite. This capacitor contributes to attenuating the noise present on the input pin; furthermore, it sources
charge during the sampling phase, when the analog signal source is a high-impedance source.
A real filter can typically be obtained by using a series resistance with a capacitor on the input pin (simple RC filter). The RC
filtering may be limited according to the value of source impedance of the transducer or circuit supplying the analog signal to
be measured. The filter at the input pins must be designed taking into account the dynamic characteristics of the input signal
(bandwidth) and the equivalent input impedance of the ADC itself.
In fact a current sink contributor is represented by the charge sharing effects with the sampling capacitance: CS being
substantially a switched capacitance, with a frequency equal to the conversion rate of the ADC, it can be seen as a resistive path
to ground. For instance, assuming a conversion rate of 1 MHz, with CS equal to 3 pF, a resistance of 330kΩ is obtained (REQ =
1 / (fc*CS), where fc represents the conversion rate at the considered channel). To minimize the error induced by the voltage
partitioning between this resistance (sampled voltage on CS) and the sum of RS + RF + RL + RSW + RAD, the external circuit
must be designed to respect the Equation 5:
Eqn. 5
R S + R F + R L + R SW + R AD
1
V A • --------------------------------------------------------------------------- < --- LSB
R EQ
2
Equation 5 generates a constraint for external network design, in particular on resistive path. Internal switch resistances (RSW
and RAD) can be neglected with respect to external resistances.
EXTERNAL CIRCUIT
INTERNAL CIRCUIT SCHEME
VDD
Source
RS
VA
Filter
RF
Current Limiter
RL
CF
Channel
Selection
Sampling
RSW1
RAD
CP1
CP2
CS
RS Source Impedance
RF Filter Resistance
CF Filter Capacitance
Current Limiter Resistance
RL
RSW1 Channel Selection Switch Impedance
RAD Sampling Switch Impedance
CP Pin Capacitance (two contributions, CP1 and CP2)
CS Sampling Capacitance
Figure 13. Input Equivalent Circuit (Precise Channels)
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
93
EXTERNAL CIRCUIT
INTERNAL CIRCUIT SCHEME
VDD
Source
Filter
RS
Current Limiter
RF
RS
RF
CF
RL
RSW
RAD
CP
CS
Extended
Switch
Sampling
RSW1
RSW2
RAD
RL
CF
VA
Channel
Selection
CP1
CP3
CP2
CS
Source Impedance
Filter Resistance
Filter Capacitance
Current Limiter Resistance
Channel Selection Switch Impedance (two contributions RSW1 and RSW2)
Sampling Switch Impedance
Pin Capacitance (three contributions, CP1, CP2 and CP3)
Sampling Capacitance
Figure 14. Input Equivalent Circuit (Extended Channels)
A second aspect involving the capacitance network shall be considered. Assuming the three capacitances CF, CP1 and CP2 are
initially charged at the source voltage VA (refer to the equivalent circuit reported in Figure 13): A charge sharing phenomenon
is installed when the sampling phase is started (A/D switch close).
Voltage Transient on CS
VCS
VA
VA2
ΔV < 0.5 LSB
1
2
τ1 < (RSW + RAD) CS 2048 • C S
4.17.2
ADC electrical characteristics
MPC5645S Microcontroller Data Sheet, Rev. 14
96
NXP Semiconductors
Table 49. ADC electrical characteristics
Symbol
C
Value2
Conditions1
Parameter
Min
Typ
Max
Unit
SpecID
VSSA
SR D Voltage on VSSA (ADC
reference) pin with respect to ground (VSS)3
—
-0.1
—
0.1
V
D15.1
VDDA
SR D Voltage on VDDA pin
(ADC reference) with respect to ground (VSS)
—
VDDE_A–0.1
—
VDDE_A+0.1
V
D15.2
VAINx
SR D Analog input voltage4
—
VSSA-0.1
—
VDDA+0.1
V
D15.3
fADC
SR D ADC analog frequency
—
6
—
32
MHz
D15.4
—
—
—
1.5
µs
D15.5
fADC = 32 MHz,
ADC_conf_sample_input =
17
0.5
—
—
µs
D15.6
fADC = 6 MHz,
ADC_conf_sample_input =
127
—
—
21
fADC = 32 MHz,
ADC_conf_comp = 2
0.625
—
—
µs
D15.7
tADC_PU SR D ADC power up delay
tADC_S
CC5
T Sample
time6
tADC_C CC5 T Conversion time7
CS
CC5 D ADC input sampling
capacitance
—
—
—
3
pF
D15.8
CP1
CC5 D ADC input pin
capacitance 1
—
—
—
3
pF
D15.9
CP2
CC5 D ADC input pin
capacitance 2
—
—
—
1
pF
D15.10
CP3
CC5 D ADC input pin
capacitance 3
—
—
—
1
pF
D15.11
RSW1
CC5 D Internal resistance of
analog source
—
—
—
3
kΩ
D15.12
RSW2
CC5 D Internal resistance of
analog source
—
—
—
2
kΩ
D15.13
RAD
CC5 D Internal resistance of
analog source
—
—
—
0.1
kΩ
D15.14
IINJ
SR
Current injection on one
ADC input, different from
the converted one
-10
—
10
mA
D15.15
INL
CC5 P Integral Non Linearity
No overload
-1.5
—
1.5
LSB
D15.16
DNL
CC5
No overload
-1.0
—
1.0
LSB
D15.17
OFS
CC5 T Offset error
After offset cancellation
—
0.5
—
LSB
D15.18
GNE
CC5
—
—
0.6
—
LSB
D15.19
T Input current Injection
P Differential Non Linearity
T Gain error
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
97
Table 49. ADC electrical characteristics (continued)
Symbol
3
4
5
6
7
Conditions
CC5 T Total Unadjusted Error for No overload
extended channel,
overload conditions on
adjacent channel
TUEX
2
Parameter
CC5 T Total Unadjusted Error for No overload
precise channels, input
overload conditions on
only pins
adjacent channel
TUEP
1
C
Value2
1
Unit
SpecID
2
LSB
D15.22
—
—
LSB
-3
—
3
LSB
—
—
—
LSB
Min
Typ
Max
-2
—
—
D15.23
VDDA = 3.3 V ± 10% / 5.0 V ± 10%, TA = -40 to +105 °C, unless otherwise specified.
All values need to be confirmed during device validation.
Analog and digital VSS must be common (to be tied together externally).
VAINx may exceed VSSA and VDDA limits, remaining on absolute maximum ratings, but the results of the conversion will be
clamped respectively to 0x000 or 0x3FF.
Guaranteed by design.
During the sample time the input capacitance CS can be charged/discharged by the external source. The internal resistance
of the analog source must allow the capacitance to reach its final voltage level within tADC_S. After the end of the sample time
tADC_S, changes of the analog input voltage have no effect on the conversion result. Values for the sample clock tADC_S depend
on programming.
This parameter does not include the sample time tADC_S, but only the time for determining the digital result and the time to
load the result’s register with the conversion result.
4.18
AC specifications
4.18.1
AC specification for CMOS090LP2 library @ VDDE = 3.3 V
Table 50. Functional pad type AC specifications
Name
pad_ssr
C
C
Prop. delay (ns)
L>H / H>L1
Rise/fall edge (ns)
Drive load
(pF)
Min
Max
Min
Max
—
4.5 / 4.5
—
2.2 / 2.2
50
—
8/8
—
6/6
200
—
45 / 45
—
22 / 22
50
—
60 / 60
—
28 / 28
200
—
90 / 90
—
42 / 42
50
—
110 / 110
—
50 / 50
200
—
430 / 430
—
210 / 210
50
—
480 / 480
—
220 / 220
200
Drive/slew
rate select
MSB, LSB
112
10
01
00
MPC5645S Microcontroller Data Sheet, Rev. 14
98
NXP Semiconductors
Table 50. Functional pad type AC specifications (continued)
Name
pad_fc
pad_msr
1
2
C
C
C
Prop. delay (ns)
L>H / H>L1
Rise/fall edge (ns)
Drive load
(pF)
Drive/slew
rate select
Min
Max
Min
Max
MSB, LSB
—
2.5 / 2.5
—
1.2 / 1.2
10
00
—
2.5 / 2.5
—
1.2 / 1.2
20
01
—
2.5 / 2.5
—
1.2 / 1.2
30
10
—
2.5 / 2.5
—
1.2 / 1.2
50
112
—
4.0 / 4.5
—
1.02 / 1.4
50
112
—
7.3 / 8.3
—
3.5 / 4.2
200
—
24 / 22
—
9.1 / 10.3
50
—
33 / 31
—
14 / 15
200
—
49 / 44
—
18 / 21
50
—
60 / 53
—
24 / 25
200
—
332 / 302
—
126 / 151
50
—
362 / 325
—
136 / 158
200
10
01
00
L>H signifies low-to-high propagation delay and H>L signifies high-to-low propagation delay.
Can be used on the tester.
4.18.2
AC specification for CMOS090LP2fg library @ VDDE = 5.0 V
Table 51. Functional pad type AC specifications
Name
pad_msr_hv2
C
C
Prop. delay (ns)
L>H / H>L1
Rise/fall edge (ns)
Drive load
(pF)
Min
Max
Min
Max
4.6 / 3.7
12 / 12
2.2 / 2.2
5.3 / 5.9
50
13 / 10
32 / 32
9/9
22 / 22
200
Drive/slew
rate select
MSB, LSB
113
104
N/A
12 / 13
28 / 34
5.6 / 6
12 / 15
50
23 / 23
52 / 59
11 / 14
28 / 31
200
69 / 71
152 / 165
34 / 35
70 / 74
50
95 / 90
205 / 220
44 / 51
96 / 96
200
01
00
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
99
Table 51. Functional pad type AC specifications (continued)
Name
pad_ssr_hv2
C
C
Prop. delay (ns)
L>H / H>L1
Rise/fall edge (ns)
Drive load
(pF)
Min
Max
Min
Max
7.3 / 5.7
19 / 18
4.4 / 4.3
10 / 11
50
24 / 19
58 / 58
17 / 15
40 / 42
200
Drive/slew
rate select
MSB, LSB
113
104
N/A
pad_i_hv
C
26 / 27
61 / 69
13 / 13
30 / 34
50
49 / 45
115 / 115
27 / 23
61 / 61
200
137 / 142
320 / 330
72 / 74
156 / 164
50
182 / 172
420 / 420
90 / 85
200 / 200
200
0.5 / 0.5
1.9 / 1.9
0.3 / 0.3
1.5 / 1.5
0.5
01
00
N/A
1
L>H signifies low-to-high propagation delay and H>L signifies high-to-low propagation delay.
For input buffer timing, look at pad_i_hv.
3 Can be used on the tester.
4 This drive select value is not supported. If selected, it will be approximately equal to 11.
2
4.18.3
AC specification for CMOS090LP2fg library @ VDDE = 3.3 V
Table 52. Functional pad AC type specifications
Name
pad_msr_hv
Prop. delay (ns)
L>H / H>L
Rise/fall edge (ns)
Drive load
(pF)
Min
Max
Min
Max
5.8 / 4.4
18 / 17
2.7 / 2.1
7.6 / 8.5
50
16 / 13
46 / 49
11.2 / 8.6
30 / 34
200
Drive/slew
rate select
MSB, LSB
N/A
11
10
14 / 16
37 / 45
6.5 / 6.7
15.5 / 19
50
27 / 27
69 / 82
15 / 13
38 / 43
200
83 / 86
200 / 210
38 / 38
86 / 86
50
113 / 109
270 / 285
53 / 46
120 / 120
200
01
00
MPC5645S Microcontroller Data Sheet, Rev. 14
100
NXP Semiconductors
Table 52. Functional pad AC type specifications (continued)
Prop. delay (ns)
L>H / H>L
Name
pad_ssr_hv
Rise/fall edge (ns)
Drive load
(pF)
Min
Max
Min
Max
9.2 / 6.9
27 / 28
5.5 / 4.1
15 / 17
50
30 / 23
81 / 87
21 / 16
57 / 63
200
MSB, LSB
11
N/A
pad_i_hv
4.18.4
Drive/slew
rate select
10
31 / 31
80 / 90
15.4 / 15.4
38 / 42
50
01
58 / 52
144 / 155
32 / 26
82 / 85
200
162 / 168
415 / 415
80 / 82
190 / 190
50
216 / 205
533 / 540
106 / 95
250 / 250
200
0.5 / 0.5
3/3
0.4 / 0.4
1.5 / 1.5
0.5
00
N/A
AC specification for CMOS090_ddr library @ VDDE = 3.3 V
Table 53. AC specifications at 3.3 V VDDE
Name
pad_st_acc
pad_st_dq
pad_st_clk
4.18.5
C
C
C
C
Prop. delay (ns)
L>H / H>L
Rise/fall edge (ns)
Drive load
(pF)
Min
Max
Min
Max
1.4/1.4
2.4/2.4
3.1/2.5
5.6/5.4
5
1.7/1.7
2.7/2.7
0.9/1.1
1.7/2.0
20
1.4/1.4
2.4/2.4
3.1/2.5
5.6/5.4
5
1.7/1.7
2.7/2.7
0.9/1.1
1.7/2.0
20
1.4/1.4
2.4/2.4
3.1/2.5
5.7/5.7
5
1.6/1.6
2.6/2.6
1.1/1.3
2.3/2.3
20
Drive/slew
rate select
Libraries
MSB, LSB
111
6MDDR
111
6MDDR
111
6MDDR
AC specification for CMOS090_ddr library @ VDDE = 2.5 V
Table 54. AC specifications at 2.5 V VDDE
Name
pad_st_acc
pad_st_dq
pad_st_clk
C
C
C
C
Prop. delay (ns)
L>H / H>L
Rise/fall edge (ns)
Drive load
(pF)
Min
Max
Min
Max
1.4/1.5
2.5/2.4
2.1/2.1
4.3/4.1
5
1.7/1.7
2.8/2.7
0.6/0.7
1.1/1.3
20
1.4/1.5
2.5/2.4
2.1/2.1
4.3/4.1
5
1.7/1.7
2.8/2.7
0.6/0.7
1.1/1.3
20
1.4/1.4
2.4/2.4
2.1/2.1
4.4/4.1
5
1.1/1.6
2.7/2.7
0.6/0.7
1.6/1.8
20
Drive/slew
rate select
Libraries
MSB, LSB
011
6MDDR
011
6MDDR
011
6MDDR
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
101
4.18.6
AC specification for CMOS090_ddr library @ VDDE = 1.8 V
Table 55. AC electrical specifications at 1.8 V VDD
Name
pad_st_acc
pad_st_dq
pad_st_clk
C
C
C
C
Prop. delay (ns)
L>H / H>L
Rise/fall edge (ns)
Drive load
(pF)
Min
Max
Min
Max
1.4/1.4
2.4/2.4
0.6/1.0
2.7/2.6
5
1.7/1.7
2.8/2.7
0.2/0.4
0.5/0.6
20
1.4/1.5
2.4/2.5
1.1/1.1
3.0/2.7
5
1.7/1.7
2.8/2.8
0.4/0.4
0.7/0.7
20
1.4/1.5
2.4/2.4
1.0/1.1
2.9/2.7
5
1.7/1.7
2.8/2.7
0.3/0.4
0.6/0.7
20
1.4/1.5
2.5/2.5
1.5/1.1
3.1/2.6
5
1.7/1.8
2.8/2.8
0.4/0.4
0.7/0.6
20
1.4/1.4
2.4/2.4
0.6/1.0
2.7/2.6
5
1.7/1.7
2.8/2.7
0.2/0.4
0.5/0.6
20
1.4/1.5
2.4/2.5
1.1/1.1
3.0/2.7
5
1.7/1.7
2.8/2.8
0.4/0.4
0.7/0.7
20
1.4/1.5
2.4/2.4
1.0/1.1
2.9/2.7
5
1.7/1.7
2.8/2.7
0.3/0.4
0.6/0.7
20
1.4/1.5
2.5/2.5
1.5/1.1
3.1/2.6
5
1.7/1.8
2.8/2.8
0.4/0.4
0.7/0.6
20
1.4/1.4
2.4/2.4
0.4/0.6
2.7/2.7
5
1.6/1.6
2.7/2.7
0.7/0.9
1.8/3.4
20
1.4/1.4
2.4/2.4
1.1/1.1
3.0/2.8
5
1.7/1.7
2.7/2.7
0.3/0.4
1.0/1.1
20
1.4/1.4
2.4/2.4
0.9/1.1
3.0/2.8
5
1.6/1.6
2.7/2.7
0.3/0.4
0.9/1.0
20
1.4/1.5
2.5/2.5
1.5/1.2
3.2/2.6
5
1.7/1.8
2.7/2.7
0.4/0.4
1.1/1.2
20
Drive/slew
rate select
Libraries
MSB, LSB
000
6MDDR
001
010
110
000
6MDDR
001
010
110
000
6MDDR
001
010
110
MPC5645S Microcontroller Data Sheet, Rev. 14
102
NXP Semiconductors
4.19
AC timing
4.19.1
IEEE 1149.1 interface timing
Table 56. JTAG Interface Timing1
Num
Symbol
1
tJCYC
2
tJDC
C
CC2
Characteristic
Min
Max
Unit
SpecID
D TCK Cycle Time
100
—
ns
A1.1
2
D TCK Clock Pulse Width (Measured at VDD/2)
40
60
ns
A1.2
2
CC
3
tTCKRISE
CC
D TCK Rise and Fall Times (40% – 70%)
—
3
ns
A1.3
4
tTMSS, tTDIS
CC2
D TMS, TDI Data Setup Time
5
—
ns
A1.4
5
tTMSH, tTDIH
CC2
D TMS, TDI Data Hold Time
25
—
ns
A1.5
tTDOV
CC2
D TCK Low to TDO Data Valid
—
35
ns
A1.6
7
tTDOI
CC2
D TCK Low to TDO Data Invalid
0
—
ns
A1.7
8
tTDOHZ
CC2
D TCK Low to TDO High Impedance
—
30
ns
A1.8
9
tBSDV
CC2
D TCK Falling Edge to Output Valid
—
35
ns
A1.9
10
tBSDVZ
CC2
D TCK Falling Edge to Output Valid out of High
Impedance
—
50
ns
A1.10
11
tBSDHZ
CC2
D TCK Falling Edge to Output High Impedance
—
50
ns
A1.11
12
tBSDST
CC2
D Boundary Scan Input Valid to TCK Rising Edge
50
—
ns
A1.12
13
tBSDHT
CC2
D TCK Rising Edge to Boundary Scan Input Invalid
50
—
ns
A1.13
6
1
These specifications apply to JTAG boundary scan only. JTAG timing specified at VDD = 3.0 V to 3.6 V, TA = -40 to 105 °C, and
CL = 50 pF with SRC = 0b01.
2 Parameter values guaranteed by design.
TCK
2
3
2
1
3
Figure 17. JTAG Test Clock Input Timing
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
103
TCK
4
5
TMS, TDI
6
7
8
TDO
Figure 18. JTAG Test Access Port Timing
MPC5645S Microcontroller Data Sheet, Rev. 14
104
NXP Semiconductors
TCK
9
11
Output
Signals
10
Output
Signals
12
13
Input
Signals
Figure 19. JTAG Boundary Scan Timing
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
105
4.19.2
Nexus Debug Interface
Table 57. Nexus Debug Port Timing1
Num
1
2
Symbol
tMCYC
tMDC
C
Characteristic
CC2
D MCKO Cycle Time
2
D MCKO Duty Cycle
CC
2
3
3
tMDOV
CC
D MCKO Low to MDO Data Valid
4
tMSEOV
CC2
D MCKO Low to MSEO Data Valid3
tEVTOV
2
D MCKO Low to EVTO Data Valid
2
5
CC
3
Min
Max
Unit
SpecID
15
—
ns
A2.1
40
60
%
A2.2
0.1
0.2
tMCYC
A2.3
0.1
0.2
tMCYC
A2.4
0.1
0.2
tMCYC
A2.5
6
tEVTIPW
CC
D EVTI Pulse Width
4
—
tTCYC
A2.6
7
tEVTOPW
CC2
D EVTO Pulse Width
1
—
tMCYC
A2.7
8
tTCYC
CC2
D TCK Cycle Time4
100
—
ns
A2.8
tTDC
CC2
D TCK Duty Cycle
40
60
%
A2.9
10
tNTDIS, tNTMSS
CC2
D TDI, TMS Data Setup Time
25
—
ns
A2.10
11
tNTDIH,
tNTMSH
CC2
D TDI, TMS Data Hold Time
5
—
ns
A2.11
12
tJOV
CC2
D TCK Low to TDO Data Valid
0
35
ns
A2.12
9
1
JTAG specifications in this table apply when used for debug functionality. All Nexus timing relative to MCKO is measured from
50% of MCKO and 50% of the respective signal. Nexus timing specified at VDD = 3.0 V to 3.6 V, TA = -40 to 105 °C, and CL =
50 pF (Cl=30 pF on MCKO), with SRC = 0b10 for MCKO and 0b11 for others.
2 Parameter values guaranteed by design.
3 MDO, MSEO, and EVTO data is held valid until next MCKO low cycle.
4 The system clock frequency needs to be three times faster that the TCK frequency.
NOTE
Nexus Dual Data Rate is not supported. The timings are mentioned for dedicated pins on
416BGA. The max value for #2, 3 and 4 above, are 0.3 of tMCYC for shared nexus ports.
1
2
MCKO
3
4
5
MDO
MSEO
EVTO
Output Data Valid
Figure 20. Nexus Output Timing
MPC5645S Microcontroller Data Sheet, Rev. 14
106
NXP Semiconductors
TCK
9
8
9
Figure 21. Nexus TCK Timing
TCK
10
11
TMS, TDI
12
TDO
Figure 22. Nexus TDI, TMS, TDO Timing
4.19.3
Interface to TFT LCD Panels (DCU3 and DCULite)
Figure 23 depicts the LCD interface timing for a generic active matrix color TFT panel. In this figure
signals are shown with positive polarity. The sequence of events for active matrix interface timing is:
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
107
•
•
•
•
PCLK latches data into the panel on its positive edge (when positive polarity is selected). In active
mode, PCLK runs continuously. This signal frequency could be from 5 to 66 MHz depending on
the panel type.
HSYNC causes the panel to start a new line. It always encompasses at least one PCLK pulse.
VSYNC causes the panel to start a new frame. It always encompasses at least one HSYNC pulse.
DE acts like an output enable signal to the LCD panel. This output enables the data to be shifted
onto the display. When disabled, the data is invalid and the trace is off.
VSYNC
LINE 1
HSYNC
LINE 2
LINE 3
LINE 4
LINE n-1
LINE n
HSYNC
DE
1
2
3
m-1
m
PCLK
LD[23:0]
Figure 23. TFT LCD interface timing overview1
4.19.3.1
Interface to TFT LCD Panels—Pixel Level Timings
Figure 24 depicts the horizontal timing (timing of one line), including both the horizontal sync pulse and
data. All parameters shown in the diagram are programmable. This timing diagram corresponds to positive
polarity of the PCLK signal (meaning the data and sync signals change on the rising edge) and active-high
polarity of the HSYNC, VSYNC and DE signals. The user can select the polarity of the HSYNC and
VSYNC signals via the SYN_POL register, whether active-high or active-low. The default is active-high.
The DE signal is always active-high.
Pixel clock inversion and a flexible programmable pixel clock delay are also supported. They are
programmed via the DCU Clock Confide Register (DCCR) in the system clock module.
The DELTA_X and DELTA_Y parameters are programmed via the DISP_SIZE register. The PW_H,
BP_H and FP_H parameters are programmed via the HSYN PARA register. The PW_V, BP_V and FP_V
parameters are programmed via the VSYN_PARA register.
1. In Figure 23, the “LD[23:0]” signal is “line data,” an aggregation of the DCU’s RGB signals—R[0:7], G[0:7] and B[0:7].
MPC5645S Microcontroller Data Sheet, Rev. 14
108
NXP Semiconductors
Table 58. LCD interface timing parameters—horizontal and vertical
Num
C
Characteristic
Value
Unit
SpecID
31.25
ns
A3.1
tPCP
CC1
D
2
tPWH
CC
1
D
HSYNC pulse width
PW_H * tPCP
ns
A3.2
3
tBPH
CC1
D
HSYNC back porch width
BP_H * tPCP
ns
A3.3
4
tFPH
CC
1
D
HSYNC front porch width
5
tSW
CC1
D
Screen width
6
tHSP
CC
1
D
7
tPWV
CC1
tBPV
CC
1
tFPV
CC1
1
8
1
Symbol
Display pixel clock period
FP_H * tPCP
ns
A3.4
DELTA_X * tPCP
ns
A3.5
HSYNC (line) period
(PW_H + BP_H + FP_H + DELTA_X ) *
tPCP
ns
A3.6
D
VSYNC pulse width
PWV * tHSP
ns
A3.7
D
VSYNC back porch width
BP_V * tHSP
ns
A3.8
D
VSYNC front porch width
FP_V * tHSP
ns
A3.9
tSH
CC
1
D
Screen height
DELTA_Y * tHSP
ns
A3.10
tVSP
CC1
D
VSYNC (frame) period
(PW_V + BP_V + FP_V + DELTA_Y ) *
tHSP
ns
A3.11
Parameter values guaranteed by design.
tHSP
Start of line
tPWH
tFPH
tSW
tBPH
tPCP
PCLK
LD[23:0]
Invalid Data
1
2
3
DELTA_X
Invalid Data
HSYNC
DE
Figure 24. Horizontal sync timing
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
109
tVSP
tSH
tBPV
tPWV
Start of Frame
tFPV
tHCP
HSYNC
LD[23:0]
(Line Data)
1
Invalid Data
2
DELTA_Y
3
Invalid Data
HSYNC
DE
Figure 25. Vertical sync pulse
4.19.3.2
Interface to TFT LCD panels—access level
Table 59. LCD Interface Timing Parameters1,2,3,4—Access Level
Num
1
2
3
4
5
Symbol
C
Characteristic
Min.
Value
Typical
Value
Max.
Value
Unit
SpecID
1
tCKP
CC5
D PDI Clock Period
31.25
—
—
ns
A3.12
2
tCHD
CC5
D Duty cycle
40
—
60
%
A3.13
3
tDSU
CC5
D interface data setup time
6
—
—
ns
A3.14
4
tDHD
CC5
D PDI interface data access hold time
1
—
—
ns
A3.15
5
tCSU
CC5
D PDI interface control signal setup time
3
—
—
ns
A3.16
6
tCHD
CC5
D PDI interface control signal hold time
1
—
—
ns
A3.17
7
CC5
D TFT interface data valid after pixel clock
—
—
6
ns
A3.18
8
CC5
D TFT interface HSYNC valid after pixel clock
—
—
5
ns
A3.19
9
CC5
D TFT interface VSYNC valid after pixel clock
—
—
5.5
ns
A3.20
10
CC5
D TFT interface DE valid after pixel clock
—
—
5.6
ns
A3.21
11
CC5
D TFT interface hold time for data and control
bits
2
—
—
ns
A3.22
12
CC5
D Relative skew between the data bits
—
—
3.7
ns
A3.23
The characteristics in this table are based on the assumption that data is output at +ve edge and displays latch data on -ve
edge.
Intra bit skew is less than 2 ns.
Load CL = 50 pf for frequency up to 20 MHz.
Load CL = 25 pf for display freq from 20 to 32 MHz.
Parameter values guaranteed by design.
MPC5645S Microcontroller Data Sheet, Rev. 14
110
NXP Semiconductors
tCHD
tCSU
tDSU
tDHD
HSYNC
VSYNC
DDE
PCLK
tCKH
tCKL
LD[23:0]
Figure 26. LCD Interface Timing Parameters—Access Level
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
111
4.19.4
RSDS Interface to TFT LCD Panels
Table 60. RSDS Electrical Characteristics
Symbol
1
2
C
Parameter
Value2
1
Conditions
Min
Typ
Max
Unit
SpecID
AVDD
SR
D Voltage on VSSE_A pin
with respect to ground
(VSS)
—
3.0
3.3
3.6
V
A4.1
IDDTX
SR
D Current Consumption:
RSDS Transmitter - Single
Cell
—
—
2.7
—
mA
A4.2
IDDPD
SR
D Power Down Current
—
—
10
—
µA
A4.3
IDDBG
SR
D Current Consumption of
Bandgap and buffer
—
—
100
—
µA
A4.4
Fmax
SR
D Data Frequency
—
—
60
85
MHz
A4.5
VOD
SR
D Differential Output Voltage
RL = 100 Ω
200
400
mV
A4.6
VOFF
SR
D Offset Voltage
VCM +/-5%
0.5
1.2
1.5
V
A4.7
tR / tF
SR
D Output Rise / Fall times
20% to 80%,
VOD=200mV, CL = 5pF
—
500
—
ps
A4.8
tXdelay
SR
D Tx Delay
—
—
3
—
ns
A4.9
SR
D Termination Resistance
(external)
5% variation
—
100
—
Ω
A4.10
SR
D Transmitter Settling time
After power down, high
to low
—
10
—
µs
A4.11
SR
D Transmitter Delay
Data in to Tx out
—
8
—
ns
A4.12
VDDA = 3.3 V ± 10% TA = -40 to +105 °C, unless otherwise specified.
All values need to be confirmed during device validation.
MPC5645S Microcontroller Data Sheet, Rev. 14
112
NXP Semiconductors
Figure 27. TCON/RSDS Timing Diagram
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
113
4.19.5
DRAM Interface
DDR Interface specification from ‘MCD - 32 Bit Automotive MCU - CMOS090LP2’ I/O Pad
Specification Revision 1.5 - May14th 2008.
This device supports SDR, DDR1, DDR2 half and full strengths, as well as LPDDR half and full speeds.
Table 61 shows the SRE settings for the different modes.
Table 61. Pad mode configurations
ipp_sre[2:0]
Mode
000
1.8V LPDDR Half Speed
001
1.8V LPDDR Full Speed
010
1.8V DDR2 Half Strength
011
2.5V DDR1
100
Not supported
101
Not supported
110
1.8V DDR2 Full Strength
111
SDR
Table 62. LPDDR, DDR and DDR2 (DDR2-250) SDRAM timing specifications1 2 3 4 5 6
At recommended operating conditions with VDD_DR of ±5%
No.
—
1
—
F
2
—
3
4
Symbol
Parameter
Min
Max
Unit
CC Frequency of Operation (Clock Period)7
—
125
MHz
VIX-AC
CC MCK AC differential crosspoint voltage
VDD_DR
× 0.5 – 0.1
VDD_DR
× 0.5 + 0.1
V
DD1
tSDCK
CC Clock period
8
—
ns
DD2
tSDCKH
CC HIGH pulse width 8
0.45
0.55
tSDCK
0.45
0.55
tSDCK
width9
5
DD3
tSDCKL
6
DD4
tCMV
CC Address, SD_CKE, SD_CAS, SD_RAS, SD_WE,
SD_CS[1:0] - Output Valid9
—
(0.5 x tSDCK)
+ 1.5
ns
7
DD4.1
tCMS
CC Address, SD_CKE, SD_CAS, SD_RAD, SD_WE,
SD_CS output setup ((tSDCK - tCMV )10
2.5
—
ns
8
DD5
tCMH
CC Address, SD_CKE, SD_CAS, SD_RAS, SD_WE,
SD_CS[1:0] - Output Hold
2.0
—
ns
9
DD6
tDQSS
CC Write Command to first DQS Latching Transition
—
WL +
0.20 x tSDCK
ns
10
DD7
tOS
CC Data and Data Mask Output Setup (DQ-->DQS)
relative to DQS (DDR Write Mode)11 12
1.0
—
ns
CC LOW pulse
MPC5645S Microcontroller Data Sheet, Rev. 14
114
NXP Semiconductors
Table 62. LPDDR, DDR and DDR2 (DDR2-250) SDRAM timing specifications1 2 3 4 5 6
At recommended operating conditions with VDD_DR of ±5% (continued)
No.
—
11
DD8
tOH
CC Data and Data Mask Output Hold (DQS-->DQ)
relative to DQS (DDR Write Mode)13
12
DD9,
DD10
tIS
CC Input Data Skew relative to DQS14
Symbol
Parameter
Min
Max
Unit
1.0
—
ns
-(0.25*tSDCK - 0.25*tSDCK 0.8)
0.8
ns
1
VDD_DR value is 1.8 V for DDR2 mode, 2.5 V for DDR1 mode, and 1.8 V for LPDDR mode.
CZ at -40, 140, 25 oC.
3
Measured with clock pin loaded with differential 100 ohm termination resistor.
4
All transitions measured at mid-supply (VDD_DR/2).
5
Measured with all outputs except the clock loaded with 50 ohm termination resistor to VDD_DR/2.
6
Data input hold is derived from each DDR_DQS clock edge. It begins with a DDR_DQS transition and ends when the first
data line becomes invalid.
7 The DRAM interface operates at the same frequency as the internal system bus.
8 Pulse width high plus pulse width low cannot exceed min and max clock period.
9 Command output valid should be half the memory bus clock (t
SDCK) plus some minor adjustments for process, temperature,
and voltage variations.
10 This is alternate representation of t
CMV parameter for clarity.
11 This specification relates to the required input setup time of DDR memories. The mcu's output setup should be larger than
the input setup of the DDR memories. If it is not larger, then the input setup on the memory is in violation. DDR_DQ[31:24]
is relative to DDR_DQS[3]; DDR_DQ[23:16] is relative to DDR_DQS[2], DDR_DQ[15:8] is relative to DDR_DQS[1] and
DDR_DQ[7:0] is relative to DDR_DQS[0].
12 The first data beat is valid before the first rising edge of DQS and after the DQS write preamble. The remaining data beats
are valid for each subsequent DQS edge.
13 This specification relates to the required hold time of DDR memories. DDR_DQ[31:24] is relative to DDR_DQS[3];
DDR_DQ[23:16] is relative to DDR_DQS[2], DDR_DQ[15:8] is relative to DDR_DQS[1] and DDR_DQ[7:0] is relative to
DDR_DQS[0].
14 Data input skew is derived from each DDR_DQS clock edge. It begins with a DDR_DQS transition and ends when the last
data line becomes valid. This input skew must include DDR memory output skew and system level board skew (due to
routing or other factors).
2
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
115
Figure 28 shows the DDR SDRAM write timing.
DD1
DD2
SD_CLK
DD3
SD_CLK
DD5
SD_CSn,SD_WE,
SD_RAS, SD_CAS
CMD
DD6
DD4
SD_A[13:0]
ROW
COL
DD7
SD_DM
DD8
SD_DQS
DD7
SD_D[7:0]
WD1 WD2 WD3 WD4
DD8
Figure 28. DDR write timing
MPC5645S Microcontroller Data Sheet, Rev. 14
116
NXP Semiconductors
Figure 29 and Figure 31 show the DDR SDRAM read timing.
DD1
DD2
SD_CLK
DD3
SD_CLK
CL=2
DD5
SD_CSn,SD_WE,
SD_RAS, SD_CAS
CMD
CL=2.5
DD4
SD_A[13:0]
ROW
COL
DD9
DQS Read
Preamble
CL = 2
SD_DQS
DQS Read
Postamble
DD10
CL = 2.5
SD_D[7:0]
RD1 RD2 RD3 RD4
DQS Read
DQS Read
Preamble
Postamble
SD_DQS
SD_D[7:0]
RD1 RD2 RD3 RD4
Figure 29. DDR read timing
Figure 30 provides the AC test load for the DDR bus.
Output
Z0 = 50 Ω
RL = 50 Ω
VDD_MEM_IO/2
Figure 30. DDR AC test load
4.19.5.1
SDR Timings
Command and address follow the same timings as other modes. For SDRAM reads/Write, the timings
mentioned in the following table apply.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
117
Table 63. SDR Timings
—
1
Symbol C
Parameter
Min
Max
Units
DD1
tQVS
C Data output Valid
(Write transaction)
—
(0.5 x tSDCK)
+ 1.5
ns
DD1.1
tQS
C Data output setup
(tDSK - DD1)1
2.5
—
ns
DD2
tQH
C Data output Hold
(Write transaction)
2.0
—
ns
DD3
tIS
C Data Input Setup
(Read transaction)
—
2.0
ns
DD4
tIH
C Data input Hold (Read
transaction)
—
2.0
ns
This is alternate representation for DD1 for better clarity.
Figure 31. SDR Read and Write Timings
4.19.5.2
2.5 V DDR1
Table 64. SSTL_2 Class II 2.5 V DDR DC Specifications
Symbol C
Parameter
Condition
Min
Nom
Max
Units
Notes
JESD8-9B
SpecID
vddet
P I/O Supply Voltage
—
2.30
2.50
2.70
V
A5.1
vdd
P Core Supply Voltage
—
1.08
1.20
1.32
V
—
A5.2
Vref(dc)
P Input Reference Voltage
—
1.13
1.25
1.38
V
JESD8-9B
A5.3
Vtt
P Termination Voltage
—
Vref-0.04
vref
Vref+0.04
V
JESD8-9B
A5.4
Vih(dc)
C DC Input Logic High
—
Vref+0.15
—
vddet+0.3
V
JESD8-9B
A5.5
Vil(dc)
C DC Input Logic Low
—
-0.3
—
Vref-0.15
V
JESD8-9B
A5.6
Vih(ac)
C AC Input Logic High
—
Vref+0.31
—
—
V
JESD8-9B
A5.7
Vil(ac)
C AC Input Logic Low
—
—
—
Vref-0.31
V
JESD8-9B
A5.8
Iin
P Pad input Leakage
Current
—
—
—
+/-10
µA
—
A5.9
MPC5645S Microcontroller Data Sheet, Rev. 14
118
NXP Semiconductors
Table 64. SSTL_2 Class II 2.5 V DDR DC Specifications (continued)
Symbol C
Parameter
Condition
Min
Nom
Max
Units
Notes
SpecID
—
A5.10
Voh
C Output High Voltage
Level
—
vddet-0.35
—
—
V
Vol
C Output Low Voltage
Level
—
—
—
0.35
V
Ioh(dc)
C Output min source dc
current
Vout=Voh
-16.2
—
—
mA
vddet = 2.3V
Voh = 1.95V
A5.12
Iol(dc)
C Output min sink dc
current
Vout=Vol
16.2
—
—
mA
vddet = 2.3V
Vol = 0.35V
A5.13
A5.11
The SSTL_2 differential input switch point is at vref = 0.50*vddet.
NOTE
The JEDEC SSTL_2 specifications (JESD8-9B) for a SSTL interface for class II operation
supersedes any specification in this document.
The SSTL_2 Class II output with ipp_sre[2:0] set to enabling SSTL_2 2.5V DDR1 mode,
at the destination, have a rise/fall time (10%-90%) between 1 ns and 2 ns over process,
voltage, and temperature driving a 70 ohm transmission line with 0.167 ns td terminated at
the destination with 70 ohms to Vtt (0.5*vddet) with 4.0 pf, representing the DDR input
capacitance.
Vtt
70 ohms
Z0=70 td= 0.167ns
ipp_do
pad_st/pad_st_odt
4pF
PAD
Figure 32. SSTL_2 CLass II Test Load
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
119
4.19.5.3
1.8 V DDR2
Table 65. SSTL_18 Class II 1.8 V DDR2 DC Specifications
Symbol C
Parameter
Condition
Min
Nom
Max
Units
Notes
vddet
P I/O Supply Voltage
—
1.7
1.8
1.9
V
vdd
P Core Supply Voltage
—
1.08
1.2
1.32
V
Vref(dc) P Input Reference Voltage
—
0.833
0.9
1.0869
V
JESD8-15A
A5.16
Vtt
P Termination Voltage
—
Vref-0.04
Vref
Vref+0.04
V
JESD8-15A
A5.17
Vih(dc)
C DC Input Logic High
—
Vref+0.125
—
vddet+0.3
V
JESD8-15A
A5.18
Vil(dc)
C DC Input Logic Low
—
-0.3
—
Vref-0.125
V
JESD8-15A
A5.19
Vih(ac)
C AC Input Logic High
—
Vref+0.25
—
—
V
JESD8-15A
A5.20
Vil(ac)
C AC Input Logic Low
—
—
—
Vref-0.25
V
JESD8-15A
A5.21
Iin
T
—
—
—
+/-10
µA
—
A5.22
Voh
C Output High Voltage
Level
—
vddet-0.28
—
—
V
—
A5.23
Vol
C Output Low Voltage
Level
—
—
—
0.28
V
—
A5.24
Ioh(dc)
C Output min source dc
current
Vout=Voh
-13.4
—
—
mA
JESD8-15A
vddet = 1.7V
Voh = 1.42V
A5.25
Iol(dc)
C Output min sink dc
current
Vout=Vol
13.4
—
—
mA
JESD8-15A
vddet = 1.7V
Vol = 0.28V
A5.26
Pad input Leakage
Current
JESD8-15A
SpecID
A5.14
A5.15
The SSTL_18 differential input switch point is at vref = 0.50*vddet.
Note that the Jedec SSTL_18 specifications (JESD8-15a) for a SSTL interface for class II operation supersedes any
specification in this document.
The SSTL_18 Class II output with ipp_sre[2:0] set to enabling sstl_2 1.8V DDR2 mode, at the destination, have a rise/fall time
(10%-90%) between 0.4 ns and 1.0 ns over process, voltage, and temperature driving a 70 ohm transmission line with 0.167 ns
MPC5645S Microcontroller Data Sheet, Rev. 14
120
NXP Semiconductors
td terminated at the destination with 70 ohms to Vtt (0.5*vddet) with 4.0 pf, representing the DDR2 input capacitance. See
Figure 33. "SSTL_18 CLass II Test Load".
Figure 33. SSTL_18 CLass II Test Load
Vtt
70
Z0=70 td= 0.167ns
ipp_do
pad_st/pad_st_odt
4pF
PAD
4.19.5.4
1.8V LPDDR
Table 66. 1.8V LPDDR DC Specifications
Symbol C
Parameter
Condition
Min
Nom
Max
Unit
s
Notes
SpecID
vddet
P I/O Supply Voltage
—
1.7
1.8
1.9
V
JESD79-4
A5.27
vdd
P Core Supply Voltage
—
1.08
1.2
1.32
V
—
A5.28
Data Inputs (DQ, DM, DQS)
A5.29
Vih(dc)
C DC Input Logic High
—
vddet*0.7
—
vddet+0.3
V
JESD79-4
A5.30
Vil(dc)
C DC Input Logic Low
—
-0.3
—
vddet*0.3
V
JESD79-4
A5.31
Vih(ac)
C AC Input Logic High
—
vddet*0.8
—
vddet+0.3
V
JESD79-4
A5.32
Vil(ac)
C AC Input Logic low
—
-0.3
—
vddet*0.2
V
JESD79-4
A5.33
Data Outputs (DQ, DQS)
A5.34
Voh
C Output High Voltage
Level
Ioh=-0.1mA
vddet*0.9
—
—
V
JESD79-4
A5.35
Vol
C Output Low Voltage
Level
Iol=0.1mA
—
—
vddet*0.1
V
JESD79-4
A5.36
Note that the final JEDEC LPDDR SDRAM specifications (JESD79-4) for LPDDR operation supersedes any specification in
this document.
The SSTL_18 output with ipp_sre[2:0] set to enabling 1.8V LPDDR mode, at the destination, have a rise/fall time (10%-90%)
between 0.4 ns and 1.0 ns over process, voltage, and temperature driving a 70 ohm transmission line with 0.167 ns td terminated
at the destination with 70 ohms to Vtt (0.5*vddet) with 4.0 pf, representing the DDR input capacitance. See ““Figure 28.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
121
4.19.6
Video Input Unit timing
Clock
fPIX_CLK
tDHD
tDSU
Data
Figure 34. VIU2 timing diagram
Table 67. VIU2 timing parameters
Parameter C
Description
Min
Typ
Max
Unit
SpecID
MHz
A6.1
D VIU2 pixel clock frequency
—
—
1
tDSU
D VIU2 data setup time
4
—
—
ns
A6.2
tDHD
D VIU2 data hold time
1
—
—
ns
A6.3
fPIX_CK
1
PIX_CLK_PERIOD(min) = C1 X IPG_CLK_PERIOD + C2 + J
where
C1 = Device parameter = 2 (if Frequency Modulation is disabled), = 2.04 (if Frequency Modulation is enabled)
C2 = Device Constant = 1.98 ns
J = Max Jitter on PIX_CLK
For example: If IPG_CLK = 125 MHz, FM on PLL is disabled and Max Jitter on PIX_CLK is (+-2ns), then the maximum
frequency of VIU pixel clock will be: PIX_CLK_F = 1/(2x8 + 1.98 + 2)ns = 50.05 MHz
MPC5645S Microcontroller Data Sheet, Rev. 14
122
NXP Semiconductors
4.19.7
External Interrupt (IRQ) and Non-Maskable Interrupt (NMI) Timing
Table 68. IRQ and NMI Timing
Num
1
1
2
Symbol
C
Characteristic
CC1 D IRQ/NMI Pulse Width Low
tIPWL
1
2
tIPWH
CC
3
tICYC
CC1 D IRQ/NMI Edge to Edge Time2
D IRQ/NMI Pulse Width High
Min.
Value
Max.
Value
Unit
SpecID
200
—
ns
A7.1
200
—
ns
A7.2
400
—
ns
A7.3
Min.
value2
Max.
value
Unit
SpecID
Parameter values guaranteed by design.
Applies when IRQ/NMI pins are configured for rising edge or falling edge events, but not both.
1,2
1,2
3
Figure 35. IRQ and NMI Timing
4.19.8
eMIOS timing
Table 69. eMIOS timing1
Num
Symbol
C
Characteristic
1
tMIPW
CC3 D eMIOS Input Pulse Width
4
—
tCYC
A8.1
2
tMOPW
CC3 D eMIOS Output Pulse Width
1
—
tCYC
A8.2
1
eMIOS timing specified at fSYS = 64 MHz, VDD12 = 1.14 V to 1.32 V, VDDE_x = 3.0 V to 5.5 V, TA = -40 to 105 °C, and CL =
50 pF with SRC = 0b00.
2 There is no limitation on the peripheral for setting the minimum pulse width, the actual width is restricted by the pad delays.
Refer to the pad specification section for the details.
3
Parameter values guaranteed by design.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
123
4.19.9
FlexCAN timing
The CAN functions are available as TX pins at normal IO pads and as RX pins at the always on domain.
There is no filter for the wakeup dominant pulse. Any high-to-low edge can cause wakeup if configured.
Table 70. FlexCAN timing1
Num
Symbol
C
Characteristic
Min. value
Max.
value
Unit
SpecID
1
tCANOV
CC2 D CTNX Output Valid after CLKOUT Rising Edge (Output
Delay)
—
22.48
ns
A10.1
2
tCANSU
CC2 D CNRX Input Valid to CLKOUT Rising Edge (Setup
Time)
—
12.46
ns
A10.2
1
FlexCAN timing specified at fSYS = 64 MHz, VDD12 = 1.14 V to 1.32 V, VDDE_x = 3.0 V to 5.5 V, TA = -40 to 105 °C, and CL =
50 pF with SRC = 0b00.
2
Parameter values guaranteed by design.
MPC5645S Microcontroller Data Sheet, Rev. 14
124
NXP Semiconductors
4.19.10 Deserial Serial Peripheral Interface (DSPI)
Table 71. DSPI Timing1
Num
5
6
7
8
Unit
SpecID
605
—
ns
A11.1
-
—
ns
A11.2
tCSC
CC
3
tASC
CC2
D After SCK Delay7
20
—
ns
A11.3
4
tSDC
CC2
D SCK Duty Cycle
tSCK/2
–2ns
tSCK/2
+ 2ns
ns
A11.4
5
tA
CC2
D Slave Access Time
(PCSx active to SOUT driven)
—
25
ns
A11.5
6
tDIS
CC2
D Slave SOUT Disable Time
(PCSx inactive to SOUT High-Z or invalid)
—
25
ns
A11.6
7
tSUI
CC2
D Data Setup Time for Inputs
Master (MTFE = 0)
Slave
Master (MTFE = 1, CPHA = 0)8
Master (MTFE = 1, CPHA = 1)
20
10
5
35
—
—
—
—
ns
ns
ns
ns
D Data Hold Time for Inputs
Master (MTFE = 0)
Slave
Master (MTFE = 1, CPHA = 0)8
Master (MTFE = 1, CPHA = 1)
–4
10
26
–4
—
—
—
—
ns
ns
ns
ns
D Data Valid (after SCK edge)
Master (MTFE = 0)
Slave
Master (MTFE = 1, CPHA=0)
Master (MTFE = 1, CPHA=1)
—
—
—
—
15
20
30
15
ns
ns
ns
ns
D Data Hold Time for Outputs
Master (MTFE = 0)
Slave
Master (MTFE = 1, CPHA = 0)
Master (MTFE = 1, CPHA = 1)
–15
5.5
0
–15
—
—
—
—
ns
ns
ns
ns
10
4
Max
2
tHI
tSUO
tHO
CC2
CC2
CC2
D SCK Cycle TIme3,4
Min
2
9
3
Characteristic
CC2
8
2
C
tSCK
1
1
Symbol
6
D PCS to SCK Delay
A11.7
A11.8
A11.9
A11.10
DSPI timing specified at VDDE_x = 3.0 V to 3.6 V, TA = -40 to 105 °C, and CL = 50 pF with SRC = 0b10.
Parameter values guaranteed by design.
The minimum SCK Cycle Time restricts the baud rate selection for given system clock rate.
The actual minimum SCK Cycle Time is limited by pad performance.
Maximum clock possible is System clock/2.
The maximum value is programmable in DSPI_CTARx[PSSCK] and DSPI_CTARx[CSSCK], program PSSCK=2 & CSSCK = 2.
The maximum value is programmable in DSPI_CTARx[PASC] and DSPI_CTARx[ASC].
This delay value is corresponding to SMPL_PT=00b which is bit field 9 and 8 of DSPI_MCR register.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
125
2
3
PCSx
1
4
SCK Output
(CPOL=0)
4
SCK Output
(CPOL=1)
7
SIN
8
First Data
Last Data
Data
10
SOUT
First Data
9
Data
Last Data
Figure 36. DSPI Classic SPI Timing — Master, CPHA = 0
PCSx
SCK Output
(CPOL=0)
8
SCK Output
(CPOL=1)
7
SIN
Data
First Data
10
SOUT
First Data
Last Data
9
Data
Last Data
Figure 37. DSPI Classic SPI Timing — Master, CPHA = 1
MPC5645S Microcontroller Data Sheet, Rev. 14
126
NXP Semiconductors
3
2
PCSx
1
4
SCK Input
(CPOL=0)
4
SCK Input
(CPOL=1)
5
First Data
SOUT
7
6
Data
Last Data
Data
Last Data
8
First Data
SIN
9
10
Figure 38. DSPI Classic SPI Timing — Slave, CPHA = 0
PCSx
SCK Input
(CPOL=0)
SCK Input
(CPOL=1)
9
5
10
SOUT
First Data
7
SIN
Data
Last Data
Data
Last Data
6
8
First Data
Figure 39. DSPI Classic SPI Timing — Slave, CPHA = 1
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
127
3
PCSx
4
1
2
SCK Output
(CPOL=0)
4
SCK Output
(CPOL=1)
7
SIN
8
First Data
Last Data
Data
10
SOUT
9
First Data
Data
Last Data
Figure 40. DSPI Modified Transfer Format Timing — Master, CPHA = 0
PCSx
SCK Output
(CPOL=0)
SCK Output
(CPOL=1)
8
7
SIN
First Data
Data
10
SOUT
First Data
Data
Last Data
9
Last Data
Figure 41. DSPI Modified Transfer Format Timing — Master, CPHA = 1
MPC5645S Microcontroller Data Sheet, Rev. 14
128
NXP Semiconductors
3
2
PCSx
1
SCK Input
(CPOL=0)
4
4
SCK Input
(CPOL=1)
10
9
5
First Data
SOUT
Data
Last Data
8
7
Data
First Data
SIN
6
Last Data
Figure 42. DSPI Modified Transfer Format Timing — Slave, CPHA = 0
PCSx
SCK Input
(CPOL=0)
SCK Input
(CPOL=1)
9
5
10
First Data
SOUT
7
SIN
Data
Last Data
Data
Last Data
6
8
First Data
Figure 43. DSPI Modified Transfer Format Timing — Slave, CPHA = 1
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
129
4.19.11 I2C timing
Table 72. I2C Input Timing Specifications—SCL and SDA
Num
Characteristic
Min. Value
Max. Value
Unit
SpecID
2
—
IP-Bus Cycle2
A12.1
2
CC1
2
—
1
CC
D Clock low time
8
—
IP-Bus Cycle
A12.2
4
—
CC1
D Data hold time
0.0
—
ns
A12.3
6
—
CC1
D Clock high time
4
—
IP-Bus Cycle2
A12.4
—
CC1
D Data setup time
0.0
—
ns
A12.5
8
—
1
CC
D Start condition setup time (for repeated
start condition only)
2
9
—
CC1
D Stop condition setup time
2
7
1
C
—
1
2
Symbol
D Start condition hold time
—
2
IP-Bus Cycle
A12.6
—
IP-Bus Cycle2
A12.7
Parameter values guaranteed by design.
Inter Peripheral Clock is the clock at which the I2C peripheral is working in the device.
Table 73. I2C Output Timing Specifications—SCL and SDA
Num
11
21
—
CC2
C
Characteristic
D Start condition hold time
Min. Value
Max. Value
Unit
SpecID
6
—
IP-Bus Cycle3
A12.8
Cycle2
A12.9
—
CC2
D Clock low time
10
—
4
3
—
CC2
D SCL/SDA rise time
—
99.6
ns
A12.10
41
—
CC2
D Data hold time
7
—
IP-Bus Cycle2
A12.11
—
CC2
D SCL/SDA fall time
—
99.5
ns
A12.12
51
1
IP-Bus
—
CC2
1
7
—
CC2
D Data setup time
2
—
IP-Bus
81
—
CC2
D Start condition setup time (for repeated
start condition only)
20
—
IP-Bus Cycle2
A12.15
91
—
CC2
D Stop condition setup time
10
—
IP-Bus Cycle2
A12.16
6
1
Symbol
D Clock high time
10
—
IP-Bus
Cycle2
A12.13
Cycle2
A12.14
Programming IBFD (I2C bus Frequency Divider) with the maximum frequency results in the minimum output timings listed. The
I2C interface is designed to scale the data transition time, moving it to the middle of the SCL low period. The actual position is
affected by the prescale and division values programmed in IFDR.
2
Parameter values guaranteed by design.
3 Inter Peripheral Clock is the clock at which the I2C peripheral is working in the device.
4 Because SCL and SDA are open-drain-type outputs, which the processor can only actively drive low, the time SCL or SDA
takes to reach a high level depends on external signal capacitance and pull-up resistor values.
MPC5645S Microcontroller Data Sheet, Rev. 14
130
NXP Semiconductors
6
2
5
SCL
4
1
3
8
7
9
SDA
Figure 44. I2C Input/Output Timing
4.19.12 QuadSPI timing
The following notes apply to Table 74 and Table 75:
•
•
•
•
•
•
•
•
All data is based on a negative edge data launch from MPC5645S and a positive edge data capture, as shown in the
timing diagrams in this section.
The supply conditions, over a temperature range of -45 °C to 125 °C/140 °C, are as follows:
— IO voltage: 3.0 V, Core supply: 1.2 V
— IO voltage: 3.3 V, Core supply: 1.2 V
— IO voltage: 3.6 V, Core supply: 1.2 V
The actual frequency at which the device can work will be a combination of this data and the clock pad profile.
All measurements are considering 70% of VDDE levels for clock pin and 50% of VDDE level for data pins.
Timings assume a setting of 0x0000_000x for QSPI_SMPR register (see the reference manual for details).
A negative value of hold is an indication of pad delay on the clock pad (delay b/w actual edge capturing data in the
device vs. edge appearing at the pin).
Measurements are with a load of 50 pF on output pins
The clock profile is measured at 30% to 70% levels of VDDE.
Table 74. QuadSPI timing specifications, maximum temperature 125 °C
Value
Symbol
C
Parameter
Min
Typ
Max
Unit
SpecID
Tcq
CC T Clock to Q delay
—
—
2.7
ns
A13.1
Ts
CC T Setup time for incoming data
7.6
—
—
ns
A13.2
Th
CC T Hold time requirement for incoming data
0
—
—
ns
A13.3
tr
CC T Clock pad rise time
0.5
0.7
1.0
ns
A13.4
tf
CC T Clock pad fall time
0.8
0.8
1.2
ns
A13.5
The numbers in Figure 45 and Figure 46 correspond to events as described in Table 75.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
131
Table 75. QuadSPI timing events
Number
Event
1
Last address out
2
Address captured at flash memory
3
Data out from flash memory
4
Ideal data capture edge
5
Delayed data capture edge with QSPI_SMPR=0x0000_000X
6
Delayed data capture edge with QSPI_SMPR=0x0000_002X
7
Delayed data capture edge with QSPI_SMPR=0x0000_004X
8
Delayed data capture edge with QSPI_SMPR=0x0000_006X
1
Tcq
SCK
DO
Figure 45. QuadSPI output timing
1
Tcq
2
3
4
5
6
7
8
SCK
Ts
DO
Th
DI
Note: Ts and Th correspond to QSPI_SMPR = 0x0000_000X.
Figure 46. QuadSPI timing events
MPC5645S Microcontroller Data Sheet, Rev. 14
132
NXP Semiconductors
Figure 47. QuadSPI input timing (SDR mode) diagram
NOTE
The above figureis illustrative for a full cycle read timing only, actual capture edge should
be inferred from Figure 46. “QuadSPI timing events“.
tr
tf
70%
VDDE
30%
SCK
Note: tr and tf measured at 30% and 70% of VDDE
Figure 48. QuadSPI clock profile
4.19.13 TCON/RSDS timing
The following notes apply to Table 76:
•
•
•
Measurement condition: vdde/vdd33 = 3.3 V ± 10%, vdd = 1.2 V ± 10%, vss/vsse = 0 V, T = –40–140 °C
Termination: 100 Ω ± 5%
VREFH_RSDS terminations of 47 μF
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
133
Table 76. TCON/RSDS timing
Value
Symbol
C
Parameter
Condition
Unit SpecID
Min
Typ
Max
RSDS mode
391
—
471
mV
A14.1
VOD
CC
C Differential output voltage
VOS
CC
C Common mode voltage
100 Ω termination between
Pad_p and Pad_n
1.17
—
1.4
V
A14.2
tr
CC
C Rise time
Transition from 20% to 80%
606
—
844
ps
A14.3
tf
CC
C Fall time
Transition from 20% to 80%
607
—
842
ps
A14.4
tplh
CC
D Propagation delay, low to
high
—
—
2.65
—
ns
A14.5
tphl
CC
D Propagation delay, high to
low
—
—
2.47
—
ns
A14.6
tdz
CC
D Start-up time
—
—
200
—
μs
A14.7
Max and min skew between
clock and data pads
—
—
—
ps
A14.8
tskew1 2 3 CC
C Skew between different
RSDS lines
1
There are eight programmable bits to provide 256 different skew numbers with various combinations of these bits.
Default value of all the eight skew options are all “1”.
3 All “0” combination of eight bits is not valid.
2
Figure 49. Rise/fall transition, part 1
Figure 50. Rise/fall transition, part 2
MPC5645S Microcontroller Data Sheet, Rev. 14
134
NXP Semiconductors
TR
TF
80%
+VOD
pad_p - pad_n
0V Differential
–V
20%
Figure 51. Illustration of tr, tf, and VOD
5
Package mechanical data
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
135
5.1
176 LQFP
Figure 52. LQFP176 Mechanical Drawing (Part 1 of 3)
MPC5645S Microcontroller Data Sheet, Rev. 14
136
NXP Semiconductors
Figure 53. LQFP176 Mechanical Drawing (Part 2 of 3)
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
137
Figure 54. LQFP176 Mechanical Drawing (Part 3 of 3)
5.2
208 LQFP
MPC5645S Microcontroller Data Sheet, Rev. 14
138
NXP Semiconductors
Figure 55. LQFP208 Mechanical Drawing (Part 1 of 3)
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
139
Figure 56. LQFP208 Mechanical Drawing (Part 2 of 3)
MPC5645S Microcontroller Data Sheet, Rev. 14
140
NXP Semiconductors
Figure 57. LQFP208 Mechanical Drawing (Part 3 of 3)
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
141
5.3
416 TEPBGA
Figure 58. 416 TEPBGA Mechanical Drawing (Part 1 of 2)
MPC5645S Microcontroller Data Sheet, Rev. 14
142
NXP Semiconductors
Figure 59. 416 TEPBGA Mechanical Drawing (Part 2 of 2)
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
143
6
Ordering information
M PC 5645S F0 V VN
Qualification status
Core code
Device number
Fab and mask indicator
Temperature range
Package identifier
Tape and reel status
Temperature range
Package identifier
C = -40 C to 85 C
V = -40 C to 105 C
LU = 176 LQFP Pb-free
LT = 208 LQFP Pb-free
VU = 416 TEPBGA Pb-free
Note: Not all options are available on all devices. Refer to Table 77.
Tape and reel status
R = Tape and reel
(blank) = Trays
Qualification status
P = Pre-qualification
M = Fully spec. qualified, general market flow
S = Fully spec. qualified, automotive flow
Figure 60. Commercial product code structure
Table 77. Orderable part number summary
Flash/SRAM
Package
Speed
(MHz)
SPC5645SF1VLU
2 MB/64 KB
176 LQFP (Pb free)
125
SPC5645SF1VLT
2 MB/64 KB
208 LQFP (Pb free)
125
SPC5645SF1VVU
2 MB/64 KB
416 TEPBGA (Pb free)
125
Part number
MPC5645S Microcontroller Data Sheet, Rev. 14
144
NXP Semiconductors
7
Revision history
Table 78. Revision history
Revision
(Date)
Description
1
(06 Oct 2009)
Initial release.
2
(7 Dec 2009)
Editorial changes.
Extensive modifications throughout the “Pinout and signal descriptions” section.
Revised the “Absolute maximum ratings” table.
Revised the “Recommended operating conditions (3.3 V)” table.
Revised the “Recommended operating conditions (5 V)” table.
In the “Voltage regulator electrical characteristics” section, changed “NJD2783” to NJD2873”.
Revised the “Interface to TFT LCD panels” section.
3
(3 Mar 2010)
Editorial changes.
Added the RoHS logo (indicating RoHS compliance).
Added a "SpecID" column to specification tables throughout the document.
In the device-comparison table:
• Revised the “Timed I/O” entry.
• Changed “Nexus 3” to “Nexus Class 3”.
In the feature list:
• Revised the information for the TCON and RSDS interface.
• In the ADC entry, changed “20 internal channels” to “Up to 20 internal channels”.
• In the QuadSPI entry, changed “quad modes of operation” to “quad IO serial flash memory”.
• In the DCU3 and DCULite entry, changed “WVGA” to “XGA”.
In the “Feature details” section:
• Revised some module abbreviations and names to be consistent with the rest of the documentation.
• In the GFX2D section, deleted “and Adobe Flash 7”.
• In the QuadSPI section, changed “Maximum frequency 80 MHz” to “Maximum serial clock
frequency 80 MHz”
• In the FlexCAN section, changed “The FlexCan modules offer” to “Each FlexCAN module offers”.
• In the DCULite section, changed “WVGA” to “XGA”.
In the 176-pin pinout, changed “MDD” to “MDO”.
In the 208-pin pinout:
• For pin 105, changed “VDDE” to “VDDE_B”.
• Renamed pin 145 (was VRSDS, is VREF_RSDS”)
• For pin 148, changed “RSRS3+P” to “RSDS3P”.
• For pin 160, changed “SCL_D” to “SCL_3”.
• For pin 161, changed “SDA_D” to “SDA_3”.
• For pin 178, changed “DCULITE_G8” to “DCULITE_G6”.
In the 324-pin pinout:
• Renamed pin A1 (was VSS_DR, is VSS).
• Renamed pin B2 (was VDDE_DDR, is VDD_DR).
• Renamed pins D11 and J9 (were VDD33_DR, are VDDE_B).
Added the “Pad configuration during reset phases” section.
In the “Voltage supply pin descriptions” table:
• Renamed VRSDS to VREF_RSDS and added a footnote about the pin’s required termination.
• Added pin B2 to VDD_DR in the 324-pin package.
• Moved pins D11 and J9 to VDDE_B.
Revised the “System pin descriptions” table.
Replaced the entire “DRAM interface pin summary” table.
• In the “Nexus pins” table, added a PCR column.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
145
Table 78. Revision history (continued)
Revision
(Date)
Description
3 (continued)
(3 Mar 2010)
Added the “VIU muxing” section.
Added the “System design information” section and a “Power-up sequencing” subsection.
In the “Recommended operating conditions (3.3 V)” table, revised footnotes 2 and 4.
In the “Recommended operating conditions (5.0 V)” table, revised footnotes 3 and 5.
Revised the text in the “Voltage regulator electrical characteristics” section.
Added meaningful content to the “DC electrical characteristics” section.
In the “Reset electrical characteristics” table, changed the specifications for WFRST (was max 40 ns, is
max 70 ns) and WNFRST (was min 1000 ns, is min 400 ns).
Replaced the entire “Pad AC specifications” section.
Added meaningful content to the “Video Input Unit timing” section.
Added orderable part numbers.
Revised the “Commercial product code structure” figure.
4
(24 Jun 2010)
Editorial changes and improvements.
In the device-comparison table, changed the GPIO count for the 176-pin package (was 127, is 128).
In the feature list:
• Changed “4 KB, 2-way instruction cache” to “4 KB, 2/4-way instruction cache”.
• Changed “32 kHz crystal oscillator” to “32 KHz crystal oscillator”.
• Changed “188 peripheral interrupt sources” to “181 peripheral interrupt sources”.
• Changed “Primary FMPLL” to “Primary FMPLL (FMPLL0)”.
• Changed “Auxiliary FMPLL” to “Auxiliary FMPLL (FMPLL1)”.
• In the crossbar switch description, deleted the reference to AMBA.
• In the SGM description, changed “WAV file” to “PCM wave”.
• Revised the RLE decoder description.
• In the SIUL description, deleted “resets”.
• In the CMU section, changed “PLL” to “primary FMPLL (FMPLL0)”.
In the feature details:
• Changed “32 kHz oscillator” to “32 KHz oscillator”.
• Changed “128 KHz oscillator” to “128 kHz oscillator”.
• Revised the “Low-power operation” section.
• In the ADC section, changed “0 to 5V common mode conversion range” to “0–5 V or 0–3.3 V
common mode conversion range”.
• Revised the DCU3 section.
• In the “On-chip graphics SRAM” section, added an entry for independent data buffers.
• In the MPU section, changed “Protection offered for 3 concurrent read ports” to “Protection offered
for 4 concurrent read ports”.
In the 176-pin pinout:
• Added content to indicate which functions are available only in this package.
• For pin 116, changed PD113 to PDI13.
• For pin 117, changed PD114 to PDI14.
• For pin 1, changed DCU_VSYNC_TCON2 to DCU_VSYNC.
• For pin 2, changed DCU_HSYNC_TCON1 to DCU_HSYNC.
• For pin 3, changed DCU_DE_TCON3 to DCU_DE.
• For pin 16, changed DCU_TAG_TCON3 to DCU_TAG.
• For pin 56, changed PDI0(VIU0) to PDI0_VIU0.
• For pin 57, changed PD11(VIU1) to PDI1_VIU1.
• For pin 58, changed PDI12(VIU2) to PDI2_VIU2.
• For pin 59, changed PDI3(VIU3) to PDI3_VIU3.
• For pin 148, deleted TCON0.
• For pin 155, deleted DCULITE_G7.
MPC5645S Microcontroller Data Sheet, Rev. 14
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NXP Semiconductors
Table 78. Revision history (continued)
Revision
(Date)
Description
4 (continued)
(24 Jun 2010)
In the 208-pin pinout:
• For pin 68, changed eMIOSA23 to eMIOS0[23].
• For pin 69, changed eMIOSA16 to eMIOS0[16].
• For pin 70, changed eMIOSA15 to eMIOS0[15].
• For pin 71, changed eMIOSA14 to eMIOS0[14].
In the 324-pin pinout:
• Added content to indicate which functions are available only in this package.
• Renamed pin J10 (was VSS_DR, is VSS).
In the “Voltage supply pin descriptions” table:
• Deleted the entry for VSS_DR.
• Added pin J10 to the VSS group in the 324-pin package.
Revised the “Nexus pins” table.
In the “Recommended operating conditions (3.3 V)” table, changed the specification for TVDD (was
0.25 V/μs, is 12 V/ms).
In the “Recommended operating conditions (5.0 V)” table, changed the specification for TVDD (was
0.25 V/μs, is 12 V/ms).
In the “FMPLL electrical characteristics” table, changed footnote 6 (was “fCPU 64 MHz can be achieved
only at up to 105 °C”, is “fCPU of 125 MHz can be achieved only at temperatures up to 105 °C with
a maximum FM depth of 2%.”.)
In the “DC specification for CMOS090LP2 library @ VDDE = 3.3 V” > “DC electrical specifications”
table, deleted the specifications for Vih_pci and Vil_pci.
Revised the “Low power oscillator electrical characteristics” table.
In the “ADC electrical characteristics” table, changed “VDD-0.1” to “VDDE_A–0.1” and “VDD+0.1” to
“VDDE_A+0.1”.
Renamed “QuadSPI2 Timing” to “QuadSPI timing” and added meaningful content.
Added the “TCON/RSDS timing” section.
5
(25 Feb 2011)
In the “Feature List” section:
• Changed RTC optional clocking from “main“ to “fast“ 4-16 MHz external oscillator.
• Changed CMU monitor feature from “main crystal oscillator“ to “fast (4–16 MHz) external crystal
oscillator”.
In the “Feature details“ section, changed “main oscillator“ to “external oscillator“ in the “System clocks
and clock generation modules“ section.
In the “Pad configuration during reset phases“ section, changed “Main oscillator pads” to “Fast (4-16
MHz oscillator pads“.
In the ““Voltage supply pin descriptions” table, changed VDD_DR function from “DDR SDRAM interface
supply“ to “1.8V, 2.5V, and 3.3V SDRAM supply“
In the “System pin descriptions” table, specified an external capacitor value of 47pF in the footnote.
In the “Functional ports” section, added list of pad types.
In the “Power-up sequencing” section:
• Added list item that specifies VDDE_B and VDD33_DR are to be powered up first.
• Added VDD33_DR to the list of generic I/O or noise-free supplies.
• Added details to VREG HV list item.
• Changed post-list text regarding DDR to be a separate NOTE, and identified the 3.3V supply as
VDD33_DR.
• Added power-up information to the LV supply (VDD12) list item.
• Added “Parameter classification” section and accompanying table.
Added “C” classification column and values to tables throughout the “Electrical characteristics“ section.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
147
Table 78. Revision history (continued)
Revision
(Date)
5 (continued)
(25 Feb 2011)
Description
In the “Absolute maximum ratings” table:
• Changed max value for VDDE_B from 5.5V to 3.6 V.
• Changed max value for VDD_DR from TBD to 3.6 V.
• Changed max value for VRSDS from TBD to 3.6 V.
• Changed max value for VIN from 5.5V to “VDDmax (VDDE max of that segment)“.
• Removed “Relative to VDD“ condition for VIN.
In the “Recommended operating conditions (3.3 V)” table:
• Changed min value for “VDD“ from 3.0 V to “VDDmin“.
• Changed max value for “VDD“ from 3.6 V to “VDDmax“.
• Changed VDD entry to include only VDDE_A, VDDE_B, VDD_DR, and VDDM.
• Corrected error in VDDE_A entry, changed reference in “parameter” column from VDDE_C to VDDE_A.
• Added VDD_DR to the VDD footnote.
In the “Recommended operating conditions (5.0 V)” table:
• Added footnote for VDDE_B max values.
• Added footnote for VDD_DR typ values.
• Changed min and max values for VDD_DR from 4.5V and 5.5V to 3.0V and 3.6V, respectively.
• Changed max value for VDD_DR (under “voltage drop” conditions) from 5.5V to 3.6V.
• Changed min and max values for VDD from 4.5V and 5.5V to VDDmin and VDDmax, also referenced
footnote 6.
• Removed VDDE_C and VDDE_E from the VDD “parameter” description and footnote, and added
VDD_DR.
• Changed min and max values for VDDE_B from 4.5V and 5.5V to 3.0V and 3.6V, respectively.
Removed the “Libraries” column from the DC specifications “library“ tables.
Removed the 75Ω and 50Ω cases and added details on the 150Ω case in the “ODT DC electrical
characteristics” table.
Changed the “Main oscillator electrical characteristics“ section name to “Fast external crystal oscillator
(4-16 MHz) electrical characteristics“ and modified text and table name within the section
appropriately.
Removed the “Full swing Pierce” condition and the relevant footnotes from the “Fast external crystal
oscillator (4-16 MHz) electrical characteristics“ table.
Changed the “Low power oscillator electrical characteristics“ section name to “Slow external crystal
oscillator (32 KHz) electrical characteristics“ and modified the text, figure, and table names within
the section appropriately.
Changed “main oscillator” to “fast external oscillator” in the “FMPLL electrical characteristics” table.
Updated parameters, conditions, and values in the “FMPLL electrical characteristics“ table.
Changed the “Main RC oscillator electrical characteristics“ section name to “Fast Internal RC oscillator
(16 MHz) electrical characteristics“ and modified the text and table name within the section
appropriately.
Changed the “Low power RC oscillator electrical characteristics“ section name to “Slow Internal RC
oscillator (128 KHz) electrical characteristics“ and modified the text and table name within the
section appropriately.
Removed duplicate entry of TUEP in the “ADC electrical characteristics” table.
Removed pad_pci and pad_osc48 from the “Functional pad type AC specifications“ table because they
are not used.
Added new “Pad mode configurations” table to the “DRAM Interface” section.
Changed the 324-pin TEPBGA pinout to 416-pin TEPBGA.
Changed the 324-pin TEPBGA mechanical drawing to 416-pin TEPBGA.
MPC5645S Microcontroller Data Sheet, Rev. 14
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NXP Semiconductors
Table 78. Revision history (continued)
Revision
(Date)
Description
5 (continued)
(25 Feb 2011)
In the “Operating mode summary“ table:
• Changed the “RAM” column to “SRAM”.
• Changed “STOP” for “16MHz IRC” from “OP” to “On”.
• Changed “STOP” for “Graphics RAM” from “On” to “CG”.
• Changed “STANDBY” for “128KHz IRC” from “OP” to “ON” (both cases).
Changed “324BGA” to “416BGA” in the “Nexus Development Interface (NDI)“ section.
Updated all data in the “Thermal characteristics for 176-pin LQFP“ table.
Updated all data in the “Thermal characteristics for 208-pin LQFP“ table.
Changed “324” in the “Thermal characteristics for 324-pin TEPBGA“ table title to “416”.
Added Spec ID numbers to the “DC electrical specifications“ tables throughout the “DC electrical
specifications“ section.
Updated the NOTE reference details in the “DC specification for CMOS090LP2 library @ VDDE = 3.3
V“ and “DC specification for CMOS090LP2fg library @ VDDE = 5.0 V” sections.
Added Spec ID numbers to the “QuadSPI timing specifications“ tables.
Added Spec ID numbers to the “TCON/RSDS timing“ table.
Added values into the empty cells in the “TCON/RSDS timing“ table.
In the “Orderable part number summary“ table:
• Changed “324” to “416”.
• Updated the part numbers.
Corrected presentation problem with the 176 LQFP figure.
6
(09 Aug 2011)
Changed “324” to “416“ in the “SC667108 device comparison“ table.
Changed I/O direction for EXTAL from “O” to “I” in the “System pin descriptions“ table.
Changed I/O direction for XTAL from “I” to “O” in the “System pin descriptions“ table.
In the “VDDE_A“ entry of the “Recommended operating conditions (3.3 V)“ table, changed “VSSE_C“ to
“VSSE_A“.
In the “VDDE_A“ entry of the “Recommended operating conditions (5.0 V)“ table, changed “VDDE_C“
to “VDDE_A”.
In the “VDDE_A“ entry of the “Recommended operating conditions (3.3 V)“ table, changed “VSSE_C“ to
“VSSE_A“.
In the “VSS“ footnote of the “Recommended operating conditions (5.0 V)“ table, changed “VSSE_C“ to
“VSSE_A”.
Removed “QuadSPI timing specifications, maximum temperature 150 C” table.
Removed “DC electrical characteristics” table in “Low voltage domain power consumption” section and
inserted a new table.
In the “Supply leakage” table, changed “spor” to “spcr”.
Removed “pad_multv_hv” and “pull_hv” entries from “Functional pad type AC specifications” table.
Removed “pad_multv_hv”, “pad_io_hv” and “lvds_ref_hv” entries from “Supply leakage” table.
Updated values in “VIU2 timing parameters” table.
Removed “pad_fsr” and “pad_pci” parameters from “Supply leakage” table.
Added Figure 28 - RSDS/TCON Timing Diagram
Added four tables in “DRAM interface” section.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
149
Table 78. Revision history (continued)
Revision
(Date)
7
(7 Feb 2012)
Description
IDDRUN values updated in “DC electrical characteristics” table.
Min and max values of VDD12 in “Voltage regulator electrical characteristics” table changed to 1.26 V
and 1.29 V, respectively.
TB changed to TA for IDDHALT value in “DC electrical characteristics” table.
Removed ΔRCMTRIM values from “Fast internal RC oscillator (16 MHz) electrical characteristics”
table.
Removed ΔRCMTRIM values from “Slow internal RC oscillator (128 KHz) electrical characteristics”
table.
Changed max Tj to 140 C in “Recommended operating conditions (3.3V)” table.
Changed max Tj to 140 C in “Recommended operating conditions (3.3V)” table.
Changed max Tj to 140 C in “Voltage regulator electrical characteristics” table.
Changed spec limits on VDD12 Post-Trimming, from min=1.270, max = 1.28 to min = 1.145, max =
1.32, in “Voltage regulator electrical characteristics” table.
Added “Low-power voltage regulator electrical characteristics” table.
Added “Ultra low-power voltage regulator electrical characteristics” table.
Offset and gain error values changed to 0.5 and 0.6 Typ, respectively, in “ADC electrical
characteristics” table.
Added “Power-up sequencing” and “Power-down sequencing” diagrams in “Power-up Sequencing”
section.
Added “LPDDR, DDR and DDR2 (DDR2-250) SDRAM timing specifications” table in “DRAM Interface”
section and removed specifications’ tables for DDR1 mode, DDR2 mode and LPDDR mode.
Updated VLVDHV3H, VLVDHV3L, VLVDHV5H and VLVDHV5L values in “Low voltage monitor
electrical characteristics” table.
Updated IDDHALT Typ and Max values in “DC electrical characteristics” table.
Changed P25 pin to VSS pin in “416 TEPBGA pinout” figure.
8
(09 Aug 2012)
In “Absolute maximum Ratings” table, changed max value of VDDPLL from 1.32 V to 1.4 V.
In “DC Electrical Characteristics” table, updated max values of IDDMAX, IDDHALT, IDDSTOP and
IDDSTDBY1.
Removed 1.32 V value for VDD, from “DC electrical specifications at 3.3 V VDDE”, “DC electrical
specifications at 2.5 V VDDE” and “DC electrical specifications at 1.8 V VDDE”.
9
(12 Sep 2012)
Added “Location of TCON Pins” table.
10
(30 Jan 2013)
Updated Table 62.
Added “Section 4.19.5.1, "SDR Timings"” section.
Added a table note for “STOP mode current” entry in Table 22 in Section 4.7.3, "Low voltage domain
power consumption"”.
11
(16 May 2013)
Added Figure 7. "Pad output delay".
Added Table 38. "SMD pad electrical characteristics", Table 39. "SMD pad delays", and Table 40.
"SSD electrical characteristics".
Changed Vdd max specification from 1.47 V to 1.32 V in Table 23. "DC electrical specifications",
Table 30. "DC electrical specifications at 3.3 V VDDE", Table 32. "DC electrical specifications at
2.5 V VDDE", and Table 34. "DC electrical specifications for 1.8 V VDDE"
MPC5645S Microcontroller Data Sheet, Rev. 14
150
NXP Semiconductors
Table 78. Revision history (continued)
Revision
(Date)
Description
12
(30 Oct 2014)
In Figure 3. "208-pin LQFP pinout":
• “DCU_LITE_TAG” added and “DCU_TAG” removed for PK10.
• “DCU_TAG” added and “DCULITE_TAG” removed for PK11.
• “SDA_1” added for PL0.
• “SCL_1” added for PL1.
In Section 1.4.13, "Display Control Unit (DCU3)", added a feature “Support displays up to 800 x 480
pixel resolutions”.
In Figure 4. "416 TEPBGA package pinout", added MSEO2 pin in added in column 17, 3rd last row.
In Table 7. "Port pin summary":
• Updated “Function” and “Peripheral” entries for PL[0] and PL[1].
• For PB[7], PM[0], PM[8], and PM[12], changed PWMOA to PWMO.
• For PB[8], PB[10], and PM[7], changed PWMO to PWMOA.
In Section 3.1, "Power-up sequencing", added a note “Vreg bypass mode is for factory testing only”.
Removed “Pad AC specifications (3.3 V, PAD3V5V = 1)” table and “Pad AC specifications (3.3 V,
PAD3V5V = 1)” section.
Updated values of VDDR in Table 13. "Recommended operating conditions (5.0 V)" to 4.5-5.5 V.
Updated temperature in table note 7 of Table 22. "DC electrical characteristics", from 110 0C to 105 0C.
Updated Table 47. "Program and erase specifications" with following modifications:
• Added rows for 64KB and 256KB programming timings
• Updated timings for 16KB and 128KB programming timings
• Removed row for 32KB programming timings
Updated Figure 58. “416 TEPBGA Mechanical Drawing (Part 1 of 2)“ and Figure 59. “416 TEPBGA
Mechanical Drawing (Part 2 of 2)“.
13
(13 Apr 2015)
Added a note in Section 2.4.1, "Pad configuration during reset phases".
In Table 67. "VIU2 timing parameters", updated the max value of VIU2 pixel clock frequency. Added a
table note for this entry.
In Section 1.3, "Feature list", updated from "Interrupt Controller (INTC) with 181 peripheral interrupt
sources and eight software interrupts" to "Interrupt Controller (INTC) with 163 peripheral interrupt
sources and eight software interrupts".
In Figure 60. “Commercial product code structure“, updated the temperature range for “C” as -40 C to
85 C and for “V” as -40 C to 85/105 C.
Updated Table 77. "Orderable part number summary".
Following changes were made in Rev 12 of DS but were not captured in Rev 12’s revision history:
• In Figure 2. "176-pin LQFP pinout", changed “MCK0” to “MCKO” for pin 174 and added “MSEO2”
to pin 159
• In Table 7. "Port pin summary", added SDA_1 function and I2C1 peripheral for PL[0] port pin and
added SCL_1 function and I2C1 peripheral for PL[1] port pin.
14
(4 Aug 2020)
In Table 74. "QuadSPI timing specifications, maximum temperature 125 °C":
•
•
•
Removed the Min and Typ values of Tcq and changed the Max value from 12.1 to 2.7.
Removed the Typ and Max values of Ts.
Removed the Typ and Max value and changed the Min value from -13 to 0 of Th.
Added Figure 47. “QuadSPI input timing (SDR mode) diagram“.
Added a note below Figure 47. “QuadSPI input timing (SDR mode) diagram“.
Renamed Figure 46. “QuadSPI timing events“.
MPC5645S Microcontroller Data Sheet, Rev. 14
NXP Semiconductors
151
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