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TDA6120Q/N2,112

TDA6120Q/N2,112

  • 厂商:

    NXP(恩智浦)

  • 封装:

    SIP13

  • 描述:

    IC AMP VIDEO OUT 47MHZ DBS13P

  • 数据手册
  • 价格&库存
TDA6120Q/N2,112 数据手册
INTEGRATED CIRCUITS DATA SHEET TDA6120Q Video output amplifier Product specification Supersedes data of 2000 Apr 19 File under Integrated Circuits, IC02 2000 Dec 13 Philips Semiconductors Product specification Video output amplifier TDA6120Q FEATURES • Maximum overall voltage gain over 46 dB • High large-signal bandwidth of 32 MHz (typ.) at 125 V (p-p) • High Power Supply Rejection Ratio (PSRR) • Fast cathode current measurement output for dark current control loop • High small-signal bandwidth of 47 MHz (typ.) at 60 V (p-p) • Differential voltage input. • Rise/fall time of 12.5 ns for 125 V (p-p) • High slew rate of 10 V/ns GENERAL DESCRIPTION • Low static power dissipation of 2.6 W at 200 V supply voltage The TDA6120Q is a single 32 MHz, 125 V (p-p) video output amplifier contained in a plastic DIL-bent-SIL power package. The device uses high-voltage DMOS technology and is intended to drive the cathodes of a CRT in High Definition TVs (HDTVs) or monitors. • High maximum output voltage • Bandwidth independent of voltage gain ORDERING INFORMATION TYPE NUMBER TDA6120Q 2000 Dec 13 PACKAGE NAME DBS13P DESCRIPTION plastic DIL-bent-SIL power package; 13 leads (lead length 7.7 mm) 2 VERSION SOT141-8 Philips Semiconductors Product specification Video output amplifier TDA6120Q BLOCK DIAGRAM handbook, full pagewidth VDD IIN 10 5 n.c. 9, 11 MIRROR 4× out CASCODE in TDA6120Q 12 1× VCC 6 13 1× OUT 0.7 pF MIRROR in 1× out 7 out 1× out 4× in CURRENT INPUT + VIN− OUTC 2 OUTM CASCODE 5 mA J 1 3 4 8 RC− RC+ VIN+ GND MGK440 Fig.1 Block diagram. +12 V Vref handbook, full pagewidth +200 V CC CD 100 100 nF nF CCC 47 µF Cr 10 nF CDD 10 µF Dflash 50 Ω VIN− 2 VCC VIN+ 4 VDD GND 6 8 OUTC 10 12 TDA6120Q 1 3 RC− Ri 442 Ω VIN C1 68 pF 5 RC+ 7 IIN 9 OUTM Ria 22 Ω 11 n.c. n.c. 13 OUT Rf Rflash 22 kΩ 220 Ω CRT MGK441 Fig.2 Top view. 2000 Dec 13 3 Philips Semiconductors Product specification Video output amplifier TDA6120Q PINNING SYMBOL PIN RC− 1 DESCRIPTION handbook, halfpage RC− 1 inverting input pre-emphasis network VIN− 2 VIN− 2 inverting voltage input RC+ 3 RC+ 3 non-inverting input pre-emphasis network VIN+ 4 VIN+ 4 non-inverting voltage input IIN 5 feedback current input VCC 6 low supply voltage (12 V) OUTM 7 cathode current measurement output GND 8 power ground n.c. 9 not connected VDD 10 high supply voltage (200 V) n.c. 11 not connected OUTC 12 cathode output OUT 13 feedback output IIN 5 VCC 6 OUTM 7 TDA6120Q GND 8 n.c. 9 VDD 10 n.c. 11 OUTC 12 OUT 13 MGK438 Fig.3 Pin configuration. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VDD high supply voltage 0 280 V VCC low supply voltage 0 20 V Vi input voltage (pins 2 and 4) 0 VCC V Vi(dif) differential mode input voltage (pins 2 and 4) −VCC +VCC V Vi(pe) pre-emphasis input voltage (pins 1 and 3) 0 VCC V Vi(dif)(pe) differential mode pre-emphasis input voltage (pins 1 and 3) −VCC +VCC V VIIN input voltage (pin 5) 0 2VBE V VOUTM measurement output voltage 0 20 V Vo output voltage (pins 12 and 13) 0 VDD V Tstg storage temperature −55 +150 °C Tj junction temperature −20 +150 °C VESD voltage peak human body model − 2000 V voltage peak machine model − 300 V 2000 Dec 13 4 Philips Semiconductors Product specification Video output amplifier TDA6120Q MGK442 20 handbook, halfpage Ptot (W) 16 12 (1) 8 4 (2) 0 −20 0 20 40 80 120 160 Tamb (°C) (1) Infinite heatsink. (2) No heatsink. Fig.4 Power derating curve. THERMAL CHARACTERISTICS SYMBOL Rth(j-c) PARAMETER thermal resistance from junction to case QUALITY SPECIFICATION Quality specification in accordance with “SNW-FQ-611 part D”. 2000 Dec 13 5 VALUE UNIT 3.0 K/W Philips Semiconductors Product specification Video output amplifier TDA6120Q CHARACTERISTICS Operating range: Tj = −20 to +150 °C; VDD = 180 to 210 V; VCC = 10.8 to 13.2 V; VOUTM = 3 to 16.5 V; VVIN− = 1.5 to VCC − 6 V; VVIN+ = 1.5 to VCC − 6 V. Test conditions: Tj = 25 °C; VDD = 200 V; VCC = 12 V; VVIN+ = 3 V; VOUTM = 6 V; CL = 10 pF (CL consists of parasitic and cathode capacitance); Rth(h-a) = 4 K/W; test circuit of Fig.5; unless otherwise specified. SYMBOL PARAMETER IDD(q) quiescent high voltage supply current ICC(q) CONDITIONS TYP. MAX. UNIT 9 11 13 mA quiescent low voltage supply VVIN− = VVIN+ current 35 45 55 mA Ibias input bias current (pins 2 and 4) VOUTC = 100 V − 76 − µA VOUTC DC output voltage (pins 12 and 13) VVIN− = VVIN+ 85 103 120 V ∆VOUTC(T) DC output voltage temperature drift (pins 12 and 13) VVIN− = VVIN+; temperature range 30 °C < Tj < 110 °C −100 −25 +55 mV/K I(offset)OUTM offset current of measurement output note 1 −30 0 +30 µA ∆IOUTM/∆IOUTC linearity of current transfer −50 µA < IOUTC < +50 µA; note 1 − 1.0 − Ci input capacitance (pins 2 and 4) VOUTC = VOUTC(max) − 4 − pF IOUTC(max) maximum dynamic peak output current (pin 12) 20 V < VOUTC < VDD − 20 V − 100 − mA VOUTC(min) minimum output voltage (pin 12) − 4 10 V VOUTC(max) maximum output voltage (pin 12) VDD − 10 VDD − 6 − V VCC(sw) VCC switch level at which pins OUT and OUTC become HIGH − 8.8 − V Gint internal gain 1.68 1.87 2.08 Bs small-signal bandwidth (pin 12) VOUTC(AC) = 60 V (p-p); VOUTC(DC) = 100 V 40 47 − MHz Bl large-signal bandwidth (pin 12) VOUTC(AC) = 125 V (p-p); VOUTC(DC) = 100 V 28 32 − MHz tpd cathode output propagation time 50% input to 50% output (pin 12) VOUTC(AC) = 125 V (p-p); VOUTC(DC) = 100 V; square wave; f < 1 MHz; tf(VIN−) = 10 ns; tr(VIN−) = 10 ns; see Figs 6 and 7 10 − 15 ns 2000 Dec 13 VOUTC = 100 V MIN. 6 Philips Semiconductors Product specification Video output amplifier SYMBOL PARAMETER TDA6120Q CONDITIONS MIN. TYP. MAX. UNIT to(r) cathode output rise time 10% output to 90% output (pin 12) VOUTC(AC) = 125 V (p-p); VOUTC(DC) = 100 V; square wave; f < 1 MHz; tf(VIN−) = 10 ns; tr(VIN−) = 10 ns; see Fig.6 10 12.5 18 ns to(f) cathode output fall time 90% VOUTC(AC) = 125 V (p-p); output to 10% output VOUTC(DC) = 100 V; square wave; f < 1 MHz; (pin 12) tf(VIN−) = 10 ns; tr(VIN−) = 10 ns; see Fig.7 10 12.5 15 ns tst settling time 50% input to (99% < output < 101%) (pin 12) − − 350 ns SRr slew rate rise between VVIN− = 2 V (p-p); square 30 V to (VDD − 30 V) (pin 12) wave; f < 1 MHz; tf(VIN−) = 10 ns; tr(VIN−) = 10 ns − 8 − V/ns SRf VVIN− = 2 V (p-p); square slew rate fall between (VDD − 30 V) to 30 V (pin 12) wave; f < 1 MHz; tf(VIN−) = 10 ns; tr(VIN−) = 10 ns − 10 − V/ns OVr cathode output voltage overshoot rise (pin 12) VOUTC(AC) = 125 V (p-p); VOUTC(DC) = 100 V; square wave; f < 1 MHz; tf(VIN−) = 10 ns; tr(VIN−) = 10 ns; see Figs 6 and 7 − 5 − % OVf cathode output voltage overshoot fall (pin 12) VOUTC(AC) = 125 V (p-p); VOUTC(DC) = 100 V; square wave; f < 1 MHz; tf(VIN−) = 10 ns; tr(VIN−) = 10 ns; see Figs 6 and 7 − 20 − % PSRRh high voltage power supply rejection ratio f < 50 kHz; note 2 − 44 − dB PSRRl low voltage power supply rejection ratio f < 50 kHz; note 2 − 48 − dB VOUTC(AC) = 125 V (p-p); VOUTC(DC) = 100 V; square wave f < 1 MHz; tf(VIN−) = 10 ns; tr(VIN−) = 10 ns; see Figs 6 and 7 Notes 1. The operating range of the measurement output OUTM is 3 to 16.5 V. Below 3 V, OUTM acts as a voltage source with an output resistance such that the maximum current input from OUTM is 1.25 mA. 2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage. 2000 Dec 13 7 Philips Semiconductors Product specification Video output amplifier handbook, full pagewidth C11 Ra 50 Ω RCC +12 V C10 VIN TDA6120Q RDD 47 Ω CCCC CCC CDD CDDD 47 µF 10 nF 10 nF 10 µF 22 nF VIN− Rba 1 kΩ C1 68 pF Vref Rbb 1 kΩ Ria 22 Ω C12 22 nF RC− 6 2 1 Ri 442 Ω 22 kΩ VDD 10 IIN 5 OUT 13 12 TDA6120Q RC+ VIN+ OUTC Rflash 147 Ω C8 7 3 6.8 pF OUTM 4 Im 10 µF VOUT 3.3 pF C9 136 pF MGK443 Rf Overall gain = G int × ----Ri Fig.5 Test circuit with gain of 40 dB. 2000 Dec 13 R3 2 MΩ C7 8 GND C13 +200 V Rf VCC 10 µF 47 Ω 8 R2 100 kΩ Philips Semiconductors Product specification Video output amplifier TDA6120Q x Vi 0 t x tst overshoot (in %) 163.75 162.5 150 161.25 Voc 100 50 37.5 t to(r) MGK444 tpd Fig.6 Output (pins 12 and 13; rising edge) as a function of input signal. 2000 Dec 13 9 Philips Semiconductors Product specification Video output amplifier TDA6120Q x Vi 0 t x tst 162.5 150 Voc 100 overshoot (in %) 38.75 50 37.5 36.25 t to(r) MGK445 tpd Fig.7 Output (pins 12 and 13; falling edge) as a function of input signal. FLASHOVER PROTECTION This external network causes an increase in the rise and fall times and a decrease in the overshoot. The TDA6120Q needs an external protection diode combined with a 50 Ω resistor to protect the video amplifier against CRT flashover discharge. Pin 10 must be decoupled to pin 8: • By a capacitor >100 nF with good HF behaviour (e.g. foil). This capacitor must be placed as close as possible to pins 10 and 8; definitely within 5 mm. An external 147 Ω carbon high-voltage resistor in combination with a 2 kV spark gap between the cathode and ground will limit the maximum clamp current (for this resistor value, the CRT has to be connected to the main printed-circuit board). 2000 Dec 13 • By a capacitor >10 µF on the picture tube base printed-circuit board (common for 3 output stages). 10 Philips Semiconductors Product specification Video output amplifier TDA6120Q TEST AND APPLICATION INFORMATION Where: CL = load capacitance Dissipation Cint = effective internal load capacitance (approximately 7 pF) Regarding dissipation, distinction must be made between static dissipation (independent of frequency) and dynamic dissipation (proportional to frequency). The static dissipation of the TDA6120Q is due to supply currents, and currents in the feedback network and CRT. f = frequency VOUTC(p-p) = output voltage (peak-to-peak value) b = non-blanking duty cycle (0.8). The static dissipation is given by the following equation: The IC must be mounted on the picture tube base printed-circuit board to minimize the load capacitance CL. P stat = V CC × I CC + V DD × I DD V OUTC – V OUTC × ----------------- – V OUTC × I OUTC Rf Switch-off The TDA6120Q is equipped with a switch-off circuit to guarantee a controlled switch-off behaviour of the output pins. The switch-off function is activated when the low supply voltage (VCC) drops below a reference level (VCC(sw)). Then the voltage at output pins OUT and OUTC is pulled to the high supply voltage level (VDD), independant of input pin voltage levels. Where: Rf = feedback resistance IOUTC = DC cathode current. The dynamic dissipation is given by the following equation: Pdyn = VDD × (CL + Cint) × f × VOUTC(p-p) × b 2000 Dec 13 11 Philips Semiconductors Product specification Video output amplifier TDA6120Q INTERNAL PIN CONFIGURATION handbook, full pagewidth VIN− VCC VDD 6 10 2 ESD ESD RC− 12 1 ESD OUTC ESD TDA6120Q VIN+ 4 ESD RC+ ESD 3 ESD ESD IIN 13 OUT 5 ESD 7 OUTM ESD 8 MGK439 GND Fig.8 Internal pin diagram. 2000 Dec 13 12 Philips Semiconductors Product specification Video output amplifier TDA6120Q PACKAGE OUTLINE DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 7.7 mm) SOT141-8 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L c Q 1 v M 13 e1 Z e e2 m w M bp 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e e1 e2 Eh j L L3 m Q v w x Z (1) mm 17.0 15.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 3.4 1.7 5.08 6 3.4 3.1 8.4 7.0 2.4 1.6 4.3 2.1 1.8 0.6 0.25 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-12-16 99-12-17 SOT141-8 2000 Dec 13 EUROPEAN PROJECTION 13 Philips Semiconductors Product specification Video output amplifier TDA6120Q The total contact time of successive solder waves must not exceed 5 seconds. SOLDERING Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 2000 Dec 13 14 Philips Semiconductors Product specification Video output amplifier TDA6120Q DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Dec 13 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. 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Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com SCA 70 © Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 753504/04/pp16 Date of release: 2000 Dec 13 Document order number: 9397 750 07562
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