TEA2095T/1/S30J

TEA2095T GreenChip dual synchronous rectifier controller Rev. 1.1 — 10 April 2020 1 Product data sheet General description The TEA2095T is a new synchronous rectifier (SR) controller IC for switched-mode power supplies. It incorporates an adaptive gate drive method for maximum efficiency at any load. The TEA2095T is a dedicated controller IC for synchronous rectification on the secondary side of resonant converters. It has two driver stages for driving the SR MOSFETs, which rectify the outputs of the central tap secondary transformer windings. The two gate driver stages have their own sensing inputs and operate independently. The TEA2095T is optimized for efficient operation with very low-ohmic MOSFETs and switching at high frequencies. The TEA2095T is fabricated in a silicon-on-insulator (SOI) process. 2 Features and benefits 2.1 Efficiency features • Adaptive gate drive for maximum efficiency at any load • Supply current in energy save operation of 90 μA • Regulation level of −25 mV for driving low-ohmic MOSFETs 2.2 Application features • • • • • • Wide supply voltage range from 4.5 V to 38 V Dual synchronous rectification for LLC resonant Supports 5 V operation with logic level SR MOSFETs Differential inputs for sensing the drain and source voltages of each SR MOSFET SO8 package with exposed die pad Discharge of the output capacitor after mains disconnect 2.3 Control features • • • • • SR control without minimum on-time Adaptive gate drive for fast turn-off at the end of conduction Undervoltage lockout (UVLO) protection with active gate pull-down Interlock function to prevent simultaneous conduction of the external MOSFETs Supports 1 MHz switching frequency TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 3 Applications The TEA2095T is intended for resonant power supplies. In such applications, it can drive two external synchronous rectifier MOSFETs for the rectification of the voltages on the two secondary windings of the transformer. These MOSFETs replace diodes. It can be used in all power supplies requiring high efficiency: • • • • 4 Adapters Power supplies for desktop PC and all-in-one PC Power supplies for television Power supplies for servers Ordering information Table 1. Ordering information Type number Package Name Description TEA2095T/1/S30 SO8 plastic small outline package; 8 leads; body width 3.9 mm Au SOT96-1 TEA2095T/1 SO8 plastic small outline package; 8 leads; body width 3.9 mm Cu SOT96-1 5 Bond-wire Version Marking Table 2. Marking TEA2095T Product data sheet Type number Marking code TEA2095T/1 TEA2095 All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 2 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 6 Block diagram VCC V AND I REFERENCE UNDER VOLTAGE LOCKOUT 5V REGULATOR DRIVER SUPPLY discharge ENERGY SAVE CONTROL IC LOGIC turn-on 11 V enable TURN ON on regulation off regulation GDA DSA SWITCH OFF -400 mV -25 mV -20 mV +150 mV INTERLOCK disable SSA turn-on TURN ON on regulation off regulation GDB DSB SWITCH OFF -400 mV -25 mV -20 mV +150 mV SSB GND aaa-033026 Figure 1. TEA2095T block diagram TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 3 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 7 Pinning information 7.1 Pinning GDB 1 GND 2 DSB 3 SSB 4 IC 8 GDA 7 VCC 6 DSA 5 SSA aaa-016990 Figure 2. TEA2095T pin configuration 7.2 Pin description Table 3. Pin description TEA2095T Product data sheet Symbol Pin Description GDB 1 gate drive output MOSFET B GND 2 ground DSB 3 drain sense input for synchronous timing MOSFET B SSB 4 source sense input MOSFET B SSA 5 source sense input MOSFET A DSA 6 drain sense input for synchronous timing MOSFET A VCC 7 supply voltage GDA 8 gate drive output MOSFET A All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 4 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 8 Functional description 8.1 Introduction The TEA2095T is a controller IC for synchronous rectification. It is perfectly suited to be used in resonant applications. It can drive two synchronous rectifier MOSFETs on the secondary side of the central tap transformer winding. Figure 3 shows a typical configuration. Vin Qprim1 PRIMARY SIDE CONTROLLER CHB TR Qprim2 Vout Cout Qsec1 DSA GDA SSA VCC IC1 IC DSB Qsec2 GDB SSB GND aaa-016991 Figure 3. TEA2095T typical configuration 8.2 Start-up and undervoltage lockout (VCC pin) When the voltage on the VCC pin exceeds Vstart, the IC leaves the UVLO state and activates the SR circuitry. When the voltage drops to below Vstop, the IC reenters the UVLO state. The SR MOSFET gate driver outputs are actively kept low. For proper operation, the VCC pin must be decoupled with an extra capacitor (not only with Cout) between the VCC pin and the GND pin. To reduce inductance effects because of high gate driver currents, the extra capacitor must be connected as close as possible to the IC. 8.3 Drain sense (DSA and DSB pins) The drain sense pins are input pins capable of handling input voltages up to 120 V. At positive drain sense voltages, the gate driver is in off-mode with pulled-down gate driver pins (pins GDA or GDB). At negative drain sense voltages, the IC enables the SR through sensing the drain source differential voltage. TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 5 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 8.4 Synchronous rectification (SR; DSA, SSA, DSB, and SSB pins) The IC senses the voltage difference between the drain sense (pins DSA and DSB) and the source sense (pins SSA and SSB) connections. The drain source differential voltage of the SR MOSFET is used to drive the gate of the SR MOSFET. When this absolute voltage difference is higher than Vact(drv), the corresponding gate driver output turns on the external SR MOSFET. When the external SR MOSFET is switched on, the absolute voltage difference between the drain and the source sense connections drops to below Vact(drv). The regulation phase follows the turn-on phase. In the regulation phase, the IC regulates the difference between the drain and the source sense inputs to an absolute level (Vreg(drv)). When the absolute difference is higher than Vreg(drv), the gate driver output increases the gate voltage of the external SR MOSFET until the Vreg(drv) level is reached. The SR MOSFET does not switch off at low currents. The IC operates without minimum on-time. When the absolute difference is lower than Vdeact(drv), the gate driver output decreases the gate voltage of the external SR MOSFET. The voltage waveform on the gate of the SR MOSFET follows the waveform of the current through the SR MOSFET. When the current through the external SR MOSFET reaches zero, the SR MOSFET is quickly switched off. After the SR MOSFET switch-off, the drain voltage increases. For a drain voltage above Vswoff, a low ohmic gate pull-down of Rpd(G) keeps the gate of the SR MOSFET switched off. TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 6 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller high current low current secondary current 0A drain sensesource sense voltage 0V Vreg(drv) Vact(drv) td(act)(drv) Vthreshold SR switch gate driver aaa-018615 0V Figure 4. Synchronous rectification signals 8.5 Gate driver (GDA and GDB pins) The gate driver circuit charges the gate of the external SR MOSFET during the rising part of the current. The driver circuit discharges the gate during the falling part of the current. The gate driver has a source capability of typically Isource and a sink capability of typically Isink. The source and sink capability allow a fast turn-on and a fast turn-off of the external SR MOSFET. The maximum driver output voltage is limited to VG(max). This high output voltage drives all MOSFET brands to the minimum on-state resistance. In applications where the IC is supplied with 5 V, the maximum output voltage of the driver is limited to 5 V. Logic level SR MOSFETs can be used. During start-up conditions (VCC < Vstart) and UVLO, the driver output voltage is actively pulled low. TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 7 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 8.6 Source sense connection (SSA and SSB pins) The IC is equipped with additional source sense pins (SSA and SSB). These pins are used for the measurement of the SR MOSFET drain-to-source voltage. The source sense input must be connected as close as possible to the source pin of the external SR MOSFET. It minimizes errors caused by voltage difference on PCB tracks because of parasitic inductance in combination with large dI/dt values. 8.7 Interlock function The TEA2095T incorporates an interlock function. The interlock function avoids the turnon of both gate driver outputs at the same time. After turn-off of one gate driver output, the IC waits typically 200 ns (td(interlock)) before turning on the other gate driver output. 8.8 Discharge function Disconnecting a power supply from the mains voltage should lead to zero output voltage and the power indicator turn-off. The TEA2095T contains a discharge function that automatically discharges the output capacitor after a mains disconnect. The detection of the mains disconnect happens by monitoring the activity of the synchronous rectification and applying a 1.4 s threshold for discriminating between noload operation and power disconnect. The discharge function creates a rapid discharging with a constant power dissipation of 0.4 W. Figure 5 shows the secondary current, the drain sense voltage, the gate driver voltage, and the supply current. The TEA2095T enters the energy save mode 110 μs after the last SR cycle. The supply current changes to a very low level of 90 μA for low no-load power. After 1.4 seconds without SR activity, the TEA2095T makes a transition to the discharge mode and draws a current of 0.4 W divided by the VCC voltage. For a VCC voltage below UVLO, the discharge current reduces gradually to a level of 8 mA at 1 V VCCvoltage. The discharge function remains active in the UVLO state. When the increasing VCC voltage exceeds the start level, the discharge current switches off. TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 8 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller lsec t VDS 12 V 5V t = 110 µs VGD Ivcc 74 mA operation energy save discharge UVLO start 34 mA 0.9 mA 90 µA t = 1.4 seconds t aaa-034313 Figure 5. Discharge function signals (not to scale) TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 9 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 9 Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit −0.4 +38 V Voltages VCC supply voltage Vsense(D)A drain sense voltage A DC −0.8 +120 V Vsense(D)B drain sense voltage B DC −0.8 +120 V Vsense(S)A source sense voltage A DC −0.4 +0.4 V Vsense(S)B source sense voltage B DC V −0.4 +0.4 DC [1] −0.4 +12.0 V voltage on pin GDB DC [1] −0.4 +12.0 V fmax maximum frequency if not limited by Ptot - 1 MHz Tstg storage temperature −55 +150 °C Tj junction temperature −40 +150 °C VGDA VGDB voltage on pin GDA General Electrostatic discharge (ESD) VESD [1] [2] [3] electrostatic discharge voltage human body model (HBM) [2] - 2000 V charged device model (CDM) [3] - 500 V Output pin; not to be voltage driven Human body model: Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. Charged device model: Equivalent to charging the IC and discharging each pin over a 1 Ω resistor. 10 Recommended operating conditions Table 5. Recommended operating conditions Symbol Parameter VCC Tj Conditions Min Max Unit supply voltage 4.75 38 V junction temperature −40 +125 °C 11 Thermal characteristics Table 6. Thermal characteristics TEA2095T Product data sheet Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient SO8 package; PCB 1 layer; 35 μm Cu; 60 mm x 125 mm 135 K/W Rth(j-c) thermal resistance from junction to case SO8 package 50 K/W All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 10 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 12 Characteristics Table 7. Characteristics Tamb = 25 °C; VCC = 12 V; CGDA/CGDB = 10 nF (capacitors between GDA and GND and between GDB and GND). All voltages are measured with respect to ground (pin 2). Currents are positive when flowing into the IC, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supply voltage management (pin VCC) Vstart start voltage 4.35 4.55 4.75 V Vstop stop voltage 4.0 4.2 4.4 V ICC(oper) operating supply current energy-save 80 90 110 μA normal operation (without gate charge) 0.7 0.9 1.05 mA 85 110 135 μs tact(es) energy save mode activation time Synchronous rectification sense input (pins DSA, SSA, DSB, and SSB) Vact(drv) driver activation voltage Vsense(S)A/Vsense(S)B = 0 V −450 −400 −350 mV Vreg(drv) driver regulation voltage Vsense(S)A/Vsense(S)B = 0 V −33 −25 −20 mV Vswoff switch-off voltage Vsense(S)A/Vsense(S)B = 0 V 60 150 200 mV td(act)(drv) driver activation delay time Vsense(S)A/Vsense(S)B = 0 V; normal operation; time from step on VDSA/VDSB (2 V to −0.5 V) to rising of VGDA/VGDB at 10 % of end value 80 - ns td(deact)(drv) driver deactivation delay time Vsense(S)A/Vsense(S)B = 0 V; normal operation; time from step on VDSA/VDSB (−0.5 V to 2 V) to falling of VGDA/VGDB at 90 % of begin value 40 - ns td delay time interlock delay time - 200 - ns Gate driver (pins GDA and GDB) Isource source current peak current at VDS = −0.5 V; VG = 0 V - −0.3 - A Isink sink current regulation current at VDS = 0 V; VG = 5 V - 1 - A peak current at VDS = 0.25 V; VG = 5 V - 2 - A Rpd(G) gate pull-down resistance VDS = 12 V; IG = 100 mA 2 2.5 3 Ω VG(max) maximum gate voltage VGDA/VGDB at VCC = 5 V 4.98 4.99 5 V VGDA/VGDB at VCC = 12 V 10.4 10.6 10.8 V VGDA/VGDB at VCC = 38 V 10.7 11 11.2 V TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 11 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller Symbol Parameter Conditions Min Typ Max Unit Discharge (pin VCC) td delay time discharge delay time 1.1 1.4 1.7 s Idch discharge current VVCC = 19.5 V 21 24 27 mA VVCC = 12 V 28 34 41 mA VVCC = 5 V 63 74 81 mA VVCC = 1 V - 8 - mA TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 12 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 13 Application information A resonant switched mode power supply with the TEA2095T consists of a primary side half-bridge, a transformer, a resonant capacitor, and an output stage. To obtain low conduction loss rectification, SR MOSFETs are used in the output stage. The TEA2095T controls these SR MOSFETs. The gate drive voltage for the SR switch is derived from the voltage difference between the corresponding drain sense and source sense pins. Special attention must be paid to the connection of the drain sense and source sense pins. The voltages measured on these pins are used for gate drive voltage. Wrong measurement results in a less efficient gate drive because the gate voltage is either too low or too high. The connections to these pins must not interfere with the power wiring. The power wiring conducts currents with high dI/dt values. It can easily cause measurement errors resulting from induced voltages due to parasitic inductances. The separate source-sense pins enable the direct sensing of the source voltage of the external MOSFETs. Using the current carrying power ground tracks is not allowed. 13.1 Application diagram resonant application Vin Qprim1 PRIMARY SIDE CONTROLLER CHB TR Qprim2 Vout Cout Qsec1 DSA IC1 GDA SSA VCC IC DSB Qsec2 GDB SSB GND aaa-016991 Figure 6. Typical resonant application with TEA2095T TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 13 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 14 Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 A2 Q A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.20 0.014 0.0075 0.19 0.16 0.15 inches 0.010 0.057 0.069 0.004 0.049 0.05 0.244 0.039 0.028 0.041 0.228 0.016 0.024 0.01 0.01 0.028 0.004 0.012 θ o 8 o 0 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 Figure 7. Package outline SOT96-1 (SO8) TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 14 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 15 Abbreviations Table 8. Abbreviations TEA2095T Product data sheet Acronym Description CDM charged device model ESD electrostatic discharge HBM human body model MM machine model MOSFET metal-oxide-semiconductor field-effect transistor SOI silicon-on-insulator SR synchronous rectification UVLO undervoltage lockout All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 15 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 16 Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes TEA2095T v.1.1 20200410 Product data sheet - TEA2095T v.1 Modifications: • Section 4 "Ordering information" has been updated. TEA2095T v.1 20191025 TEA2095T Product data sheet Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 - © NXP B.V. 2020. All rights reserved. 16 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller 17 Legal information 17.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. notice. This document supersedes and replaces all information supplied prior to the publication hereof. 17.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without TEA2095T Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 17 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. 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The English version shall prevail in case of any discrepancy between the translated and English versions. Security — While NXP Semiconductors has implemented advanced security features, all products may be subject to unidentified vulnerabilities. Customers are responsible for the design and operation of their applications and products to reduce the effect of these vulnerabilities on customer’s applications and products, and NXP Semiconductors accepts no liability for any vulnerability that is discovered. Customers should implement appropriate design and operating safeguards to minimize the risks associated with their applications and products. 17.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. GreenChip — is a trademark of NXP B.V. TEA2095T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1.1 — 10 April 2020 © NXP B.V. 2020. All rights reserved. 18 / 19 TEA2095T NXP Semiconductors GreenChip dual synchronous rectifier controller Contents 1 2 2.1 2.2 2.3 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 9 10 11 12 13 13.1 14 15 16 17 General description ............................................ 1 Features and benefits .........................................1 Efficiency features ............................................. 1 Application features ........................................... 1 Control features ................................................. 1 Applications .........................................................2 Ordering information .......................................... 2 Marking .................................................................2 Block diagram ..................................................... 3 Pinning information ............................................ 4 Pinning ............................................................... 4 Pin description ................................................... 4 Functional description ........................................5 Introduction ........................................................ 5 Start-up and undervoltage lockout (VCC pin) .... 5 Drain sense (DSA and DSB pins) ..................... 5 Synchronous rectification (SR; DSA, SSA, DSB, and SSB pins) ..........................................6 Gate driver (GDA and GDB pins) ...................... 7 Source sense connection (SSA and SSB pins) ................................................................... 8 Interlock function ............................................... 8 Discharge function ............................................. 8 Limiting values .................................................. 10 Recommended operating conditions .............. 10 Thermal characteristics ....................................10 Characteristics .................................................. 11 Application information .................................... 13 Application diagram resonant application ........ 13 Package outline .................................................14 Abbreviations .................................................... 15 Revision history ................................................ 16 Legal information .............................................. 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2020. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 April 2020 Document identifier: TEA2095T