UBA2211APN1

UBA2211 Half-bridge power IC family for CFL lamps Rev. 2 — 3 January 2011 Objective data sheet 1. General description The UBA2211 family of integrated circuits are a range of high voltage monolithic ICs for driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. The family is specifically designed to provide easy integration of lamp loads across a range of burner power and mains voltages. Patented technologies and integrated protection types: • Preheat state: – Preheat applications: Adjustable current controlled preheat mode technology enables the preheat time (tph) and preheat current to be set. This mode is triggered during start up. – Non-preheat applications: Glow-time control minimizes electrode damage just after ignition of the lamp. • Saturation Current Protection (SCP): This protection is active during ignition ensuring the lamp inductor can operate at the saturation current limit without exceeding the current ratings of the integrated half-bridge power transistors. • RMS current control: The IC internally calculates the RMS current and changes the frequency (fosc) to ensure the RMS current remains constant. RMS current control is active in the burn state ensuring a constant half-bridge burner current and IC dissipation. The nominal half-bridge burner current is set using the sense resistor (RSENSE). • OverTemperature Protection (OTP) and Capacitive Mode Protection (CMP): Overtemperature and capacitive mode protection monitor the application ensuring, in non-standard conditions, correct system shutdown and a safe condition at the burner’s end-of-life. 2. Features and benefits 2.1 System integration Integrated half-bridge power transistors UBA2211A: 220 V mains; 13.5 Ω; 0.9 A maximum ignition current UBA2211B: 220 V mains; 9 Ω; 1.35 A maximum ignition current UBA2211C: 220 V mains; 6.6 Ω; 1.85 A maximum ignition current Integrated bootstrap diode Integrated high voltage supply NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 2.2 Burner lifetime Current controlled preheat with adjustable preheat time and preheat current Minimum glow time control to support cold start Lamp power independent from mains voltage variations Lamp inductor saturation protection during ignition 2.3 Safety Overtemperature protection Capacitive mode protection Overpower control System shutdown at burner end of life 2.4 Ease of use Adjustable operating frequency for easy fit with various burners Each device in the family incorporates the same controller functionality ensuring easy power scaling and roll-out across a complete range of CFLs 3. Applications Compact Fluorescent Lamps up to 25 W for indoor and outdoor applications 4. Ordering information Table 1. Ordering information Package Name UBA2211AP/N1 UBA2211BP/N1 UBA2211CP/N1 UBA2211AT/N1 UBA2211BT/N1 UBA2211CT/N1 SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 DIP8 Description plastic dual in-line package; 8 leads (300 mil) Version SOT97-1 Type number UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 2 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 5. Block diagram Clamp COUT1 rectified mains VDD CVDD LAMP COUT2 Llamp VDD DVDT n.p. (5) HV 6(3) CDVDT UBA2211 startup 7(6) n.p. (4) PGND VDD VDD VO(ref)RMS OTP Isat reset LATCH reset set 5(14) OUT HSPT DRIVER 3(11) FS HSPT Cbs VDD Rosc GLOW AND Isat CONTROL PULSE RC 8(7) VOLTAGE CONTROLLED OSCILLATOR :2 VSW VSW(ph) burn state RMS control X2 − VO(ref)RMS2 SGND 2(1, 2, 9, 10, 13) VO(ref)RMS HS on fosc NON-OVERLAP LS on TIMER LSPT DRIVER LSPT RSENSE Cosc SW 1(8) CSW 4(12) SENSE preheat preheat Vref(ph) 001aal990 n.p. in the diagram means not present in DIP8 package Fig 1. Block diagram In the SO14 package, the two diodes which are required for the DVDT supply are integrated and connected between pins DVDT and PGND. In the DIP8 package, these diodes are not bonded out and need to be placed externally. UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 3 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 6. Pinning information 6.1 Pinning SGND SGND HV SW SGND FS SENSE 1 2 8 7 RC VDD HV OUT PGND DVDT VDD RC 1 2 3 4 5 6 7 014aab093 14 OUT 13 SGND 12 SENSE UBA2211T 11 FS 10 SGND 9 8 SGND SW UBA2211P 3 4 014aab092 6 5 Fig 2. Pin configuration for UBA2211XP (SOT97-1) Fig 3. Pin configuration for UBA2211XT (SOT108-1) 6.2 Pin description Table 2. Symbol SW SGND FS SENSE OUT HV VDD RC DVDT PGND Pin description Pin UBA2211XP UBA2211XT 1 2 3 4 5 6 7 8 n.p. n.p. 8 1, 2, 9, 10, 13 11 12 14 3 6 7 5 4 sweep timing and VCO input signal ground high-side floating supply output voltage sense for preheat and RMS control half-bridge output high-voltage supply internal low-voltage supply output internal oscillator input DVDT supply input DVDT supply ground Description UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 4 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 7. Functional description 7.1 Supply voltage The UBA2211 family is powered using the start-up current source and the VDD supply. When the voltage on pin HV increases, the VDD capacitor (CVDD) is charged using the internal Junction gate Field-Effect Transistor (JFET) current source. The voltage on pin VDD rises until VDD equals VDD(start). The start-up current source is then disabled. The half-bridge starts switching causing the charge pump activate and in turn supply VDD. The amount of current flowing towards VDD equals VHV × CDVDT × f where f represents the momentary frequency. The charge pump consists of an external half-bridge capacitor (CDVDT). The SO14 package contains two internal diodes with an internal Zener diode. However, with the DIP8 package, these diodes must be mounted externally. The Zener diode ensures the VDD voltage cannot rise above the maximum VDD rating. The DVDT supply has its own ground pin (PGND) to prevent large peak currents from flowing through the external small signal ground pin (SGND). The start-up current source is enabled when the voltage on pin VDD is below VDD(stop). 7.2 Start-up state When the supply voltage on pin VDD increases, the IC enters the start-up state. In the start-up state the High-Side Power Transistor (HSPT) is switched off and the Low-Side Power Transistor (LSPT) is switched on. The circuit is reset and the capacitors on the bootstrap pin FS (Cbs) and the low-voltage supply pin VDD (CVDD) are charged. Pins RC and SW are switched to ground. When pin VDD is above VDD(start), the start-up state is exited and the preheat state is entered. If the voltage on pin VDD falls below VDD(stop), the system returns to the start-up state. Remark: If OTP is active, the IC remains in the start-up state for as long as this is the case. The VDD voltage slowly oscillates between VDD = VDD(stop) and VDD = VDD(start). 7.3 Reset A DC reset circuit is incorporated in the high-side driver. The high-side transistor is switched off when the voltage on pin FS is below the high-side lockout voltage. 7.4 Oscillation control The oscillation frequency is based on the 555-timer function. A self oscillating circuit is created comprising the external components: resistors Rosc, RSENSE and capacitor Cosc. The nominal oscillating frequency is determined by Rosc and Cosc. An internal divider 0.5 × fosc(int) is used to generate the accurate 50 % duty cycle. The divider sets the bridge frequency at half the oscillator frequency. Signal VSW is generated by the input on pin SW and it is used to determine the frequency in all states except preheat. Signal VSW(ph) is an internally generated signal used to determine the frequency during the preheat state. UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 5 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps The output voltage of the bridge changes with the falling edge of the signal on pin RC. The nominal half-bridge frequency is shown in Equation 1: 1 f osc ( nom ) = -----------------------------------------k osc × R osc × C osc (1) The maximum frequency is 2.5 × fosc(nom) and is set at VSW. An overview of the oscillator, internal LSPT and HSPT drive signals and the output is shown in Figure 4. VRC 0 time (s) HSPT driver 0 time (s) LSPT driver 0 VOUT half-bridge 0 time (s) 001aam035 time (s) Fig 4. Oscillator, HSPT/LSPT drivers and output signals 7.5 Preheat state As described in Section 7.2, the IC enters the preheat state when the voltage on pin VDD is above VDD(start) and OTP is not active. The capacitor on pin SW (CSW) is charged by the sweep current (ISW). The preheat Operational Transconductance Amplifier (OTA) is enabled and the half-bridge circuit starts oscillating. The preheat current is monitored using the external RSENSE resistor. The OTA controls the frequency using output voltage VSW(ph) so that the peak voltage across RSENSE equals the internal reference voltage (Vref(ph)). The peak voltage is the voltage at the end of the LSPT conduction time. The preheat peak current through the lamp filament is calculated as shown in Equation 2: V ref ( ph I ph ( peak ) = -----------------) R SENSE (2) The preheat time is set by the external capacitor (CSW). The preheat state ends when the down-going CSW voltage equals VSW(ph); see Figure 4. If during the preheat time, capacitive mode is sensed, the internal VSW HIGH node is discharged and the frequency sweep restarts at fmax. UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 6 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps Vlamp 2.5 × fosc(nom) fosc(int) fosc(nom) VSW HIGH 0.6 × VH(RC) VSW(ph) VSW 0 preheat time ignition time (s) RMS control 001aal992 Fig 5. fosc(nom), VSW, VSW(ph) and Vlamp plotted against time 7.6 Ignition state The ignition state is entered after the preheat state has finished. The capacitor on pin SW (CSW) is charged by ISW up to 0.6 × VH(RC) which corresponds to the frequency fosc(nom). During this frequency sweep, the resonance frequency is reached resulting in the ignition of the lamp (see Figure 4). The resonance frequency is set by the lamp inductor (Llamp) and lamp capacitor (Clamp). The ignition state ends when the voltage on pin SW (VSW) reaches 0.6 × VH(RC). 7.7 Steady state In the steady state, the RMS current control is active. This control sets the frequency so that the RMS voltage across the sense resistor (RSENSE) is equal to VO(ref)RMS. This ensures the current through the power switches and through the lamp is constant. This results in constant IC dissipation and temperature at a fixed ambient temperature. During one oscillator clock cycle, the voltage on pin SENSE (VSENSE) is squared and converted into a positive current. This discharge current is added to the capacitor CSW. During the other oscillator clock cycle, the input of the squarer is connected to the internal reference voltage VO(ref)RMS. This voltage is squared and converted into a negative current. This charge current is also added to capacitor CSW. When both currents are equal, then Equation 3 is true: UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 7 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps T osc T osc 1 --------- × T osc ∫ 0 V SENSE ( t ) DT 2 1 = --------- × T osc ∫ 0 V O ( ref ) RMS DT 2 (3) Where Tosc equals the operating frequency fosc / 1. Taking the square root of both sides results in Equation 4: T osc T osc 1 --------- × T osc or ∫ 0 V SENSE ( t ) DT 2 = 1 --------- × T osc ∫ 0 V O ( ref ) RMS DT 2 (4) RMS V SENSE = V O ( ref ) RMS = R SENSE × I LSPT (5) A constant current flows through the power switches and the lamp which is defined by the internal reference voltage (VO(ref)RMS) and the external RSENSE resistor. The RSENSE resistor sets both the preheat current and the RMS half-bridge current. The ratio between them is fixed. However by adding a resistor in parallel to Csw (see Figure 7) this ratio can be adjusted. This is described in more detail in the UBA2211 user manual. 7.8 Non-overlap time The non-overlap time is defined as the time when both MOSFETs are not conducting. The non-overlap time is fixed internally. 7.9 OverTemperature Protection (OTP) OTP is active in all states. When the die temperature reaches the OTP activation threshold (Tth(act)otp), the oscillator is stopped and the power switches (LSPT/HSPT) are set to the startup state. When the oscillator is stopped, the DVDT supply no longer generates the supply current IDVDT. Voltage VDD gradually decreases and the start-up state is entered as described in Section 7.2 on page 5. OTP is reset when the temperature < Tth(rel)otp. 7.10 Minimum glow time control If the preheat time is set too short or omitted, the lamp electrodes do not have the correct temperature in the ignition state. This results in instant light but also in a reduced switching lifetime because when the electrode temperature is too low electrode sputtering and damage occur. The minimum glow time control minimizes electrode damage by ensuring maximum power use during the glow phase to heat the electrodes heat as quickly as possible (see Figure 6). UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 8 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps Vlamp 2.5 × fosc(nom) fosc(int) fosc(nom) VSW HIGH 0.6 × VH(RC) VSW(ph) VSW(ph) 0 preheat time ignition glow VSW time (s) RMS control 001aal991 Fig 6. fosc(nom), VSW, VSW(ph) and Vlamp plotted against time. The glow time control is active as tph is too short to preheat the electrodes 7.11 Saturation Current Protection (SCP) A critical parameter in the design of the lamp inductor is its saturation current. When the momentary inductor exceeds its saturation current, the inductance drops significantly. If this happens, the inductor current and the current flowing through the LSPT and HSPT power switches increases rapidly. This can cause the current to exceed the half-bridge power transistors maximum ratings. Saturation of the lamp inductor is likely to occur in cost-effective and miniaturized CFLs. The UBA2211 family internally monitors the power transistor current. When this current exceeds the momentary rating of the internal half-bridge power transistors, the conduction time is reduced and the frequency is slowly increased (by discharging CSW). This causes the system to balance at the edge of the current rating of the power switches. 7.12 Capacitive Mode Protection (CMP) When capacitive mode is detected, capacitor CSW is discharged causing the frequency to increase. The system sets itself to the operating point where capacitive mode switching is minimized. CMP is active during the ignition state and in the steady state. If capacitive mode is sensed during the preheat time, the oscillator restarts at fmax. CMP could be triggered by an end of lamp life condition when a lamp electrode is broken. UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 9 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 8. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VHV voltage on pin HV Conditions operating mains transients: 10 minutes maximum over lifetime VFS VDD VSENSE VRC VSW IOUT voltage on pin FS supply voltage voltage on pin SENSE voltage on pin RC voltage on pin SW current on pin OUT IRC < 1 mA ISW < 1 mA Tj < 125 °C UBA2211AX UBA2211BX UBA2211CX IDVDT SR Tj Tstg VESD current on pin DVDT slew rate junction temperature storage temperature electrostatic discharge voltage HBM: pins HV, FS, OUT pins SW, RC, VDD, DVDT MM: all pins CDM: all pins [1] [2] [3] X where the last letter is P or T. In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. In accordance with the Machine Model (MM): equivalent to discharging a 200 pF capacitor through a 1.5 kΩ series resistor and a 0.75 μH inductor. [3] [3] [2] [1] Min 0 0 −5 0 0 −0.9 −1.35 −1.65 −0.9 −4 −40 −55 - Max 373 550 14 15 +5 VDD VDD +0.9 +1.35 +1.65 +0.9 +4 +150 +150 1000 2500 250 500 Unit V V V V V V V A A A A V/ns °C °C V V V V with respect to pin OUT DC supply Tj < 125 °C repetitive output on pin OUT UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 10 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 9. Thermal characteristics Table 4. Symbol Rth(j-a) Rth(j-c) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to case Conditions in free air in free air [1] [1] Typ 95 16 Unit K/W K/W In accordance with IEC 60747-1 10. Characteristics Table 5. Characteristics Tj = 25 °C; all voltages are measured with respect to SGND; positive currents flow into the IC. Symbol VHV VFS Start-up state IHV VDD(start) VDD(stop) VDD(hys) VDD(reg) Isink Output stage Ron on-state resistance high-side transistor: UBA2211AX; VHV = 310 V; ID = 100 mA UBA2211BX; VHV = 310 V; ID = 100 mA UBA2211CX; VHV = 310 V; ID = 100 mA low-side transistor: UBA2211AX; ID = 100 mA UBA2211BX; ID = 100 mA UBA2211CX; ID = 100 mA Ron(150)/ Ron(25) VF on-state resistance ratio (150 °C to 25 °C) forward voltage HS; IF = 200 mA LS; IF = 200 mA bootstrap diode; IF = 1 mA tno VFS IFS non-overlap time voltage on pin FS current on pin FS lockout voltage VHV = 310 V; VFS = 12 V [1] [1] Parameter voltage on pin HV voltage on pin FS Conditions t < 10 minutes; IHV < 30 μA t < 10 minutes; IHV < 30 μA Min 0 0 Typ - Max 550 564 Unit V V High-voltage supply Low-voltage supply current on pin HV start supply voltage stop supply voltage hysteresis of supply voltage regulation supply voltage sink current capability of VDD regulator VHV = 100 V oscillation start oscillation stop start − stop 10.7 8 3 6 0.85 11.7 8.5 3.5 13.8 12.7 9 4 mA V V V V mA 0.7 1.05 3.6 10 13.5 9.3 6.6 13.5 8.2 6.6 1.7 1.0 1.35 4.2 14 2.0 2.0 1.3 1.65 4.8 18 Ω Ω Ω Ω Ω Ω V V V μs V μA UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 11 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps Table 5. Characteristics …continued Tj = 25 °C; all voltages are measured with respect to SGND; positive currents flow into the IC. Symbol Isat Parameter saturation current Conditions high-side transistor: UBA2211AX; VDS = 30 V; Tj ≤ 125 °C; VHV = 310 V UBA2211BX; VDS = 30 V; Tj ≤ 125 °C; VHV = 310 V UBA2211CX; VDS = 30 V; Tj ≤ 125 °C; VHV = 310 V low-side transistor: UBA2211AX; VDS = 30 V; Tj ≤ 125 °C UBA2211BX; VDS = 30 V; Tj ≤ 125 °C UBA2211CX; VDS = 30 V; Tj ≤ 125 °C Internal oscillator fosc(int) fosc(nom) internal oscillator frequency nominal oscillator frequency VSW = VDD Rosc = 100 kΩ; Cosc = 220 pF; VSW = VDD Rosc = 100 kΩ; Cosc = 220 pF; ΔT = −20 to +150 °C 40.05 0.371 0.028 trip point; VH(RC) = kH × VDD trip point; VL(RC) = kL × VDD Rosc = 100 kΩ; Cosc = 220 pF 4.08 0.308 1.065 CSW = 100 nF 262 155 60 kHz 41.32 42.68 kHz 2 % [1] [1] Min 0.90 1.35 1.85 Typ - Max - Unit A A A 0.90 1.35 1.85 - - A A A Δfosc(nom)/ΔT nominal oscillator frequency variation with temperature kH kL VH(RC) VL(RC) Kosc Vref(ph) tph VO(ref)RMS Tth(act)otp Tth(rel)otp high-level trip point factor low-level trip point factor HIGH-level voltage on pin RC LOW-level voltage on pin RC oscillator constant preheat reference voltage preheat time RMS reference output voltage overtemperature protection activation threshold temperature overtemperature protection release threshold temperature 0.384 0.397 0.032 0.036 4.22 1.1 620 1.5 285 175 100 4.37 1.135 308 mV s mV °C °C V 0.352 0.396 V Preheat function RMS current control function OTP function [1] X where the last letter is P or T. UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 12 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 11. Application information LFILT D1 D4 COUT1 Llamp LAMP Clamp U1 SGND SGND HV 1 2 3 4 5 6 7 14 13 12 OUT SGND SENSE FS SGND SGND SW CSW CDVDT L_N AC input Rfuse CBUF CFS PGND DVDT VDD Rosc UBA2211 11 10 9 8 L_L RC Cosc RSENSE D2 D3 COUT2 CVDD 001aal993 Fig 7. Application diagram UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 13 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 12. Package outline DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1 D seating plane ME A2 A L A1 c Z e b1 wM (e 1) b2 5 MH b 8 pin 1 index E 1 4 0 5 scale 10 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.2 0.17 A1 min. 0.51 0.02 A2 max. 3.2 0.13 b 1.73 1.14 0.068 0.045 b1 0.53 0.38 0.021 0.015 b2 1.07 0.89 0.042 0.035 c 0.36 0.23 0.014 0.009 D (1) 9.8 9.2 0.39 0.36 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.1 e1 7.62 0.3 L 3.60 3.05 0.14 0.12 ME 8.25 7.80 0.32 0.31 MH 10.0 8.3 0.39 0.33 w 0.254 0.01 Z (1) max. 1.15 0.045 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION SOT97-1 REFERENCES IEC 050G01 JEDEC MO-001 JEITA SC-504-8 EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-13 Fig 8. UBA2211 Package outline SOT97-1 (DIP8) All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 14 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE vMA Z 14 8 Q A2 A1 pin 1 index (A 3) θ Lp L A 1 7 e bp wM detail X 0 2.5 scale 5 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 8.75 8.55 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.05 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 0.028 0.024 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3 θ o 0.010 0.057 inches 0.069 0.004 0.049 0.019 0.0100 0.35 0.014 0.0075 0.34 0.244 0.039 0.041 0.228 0.016 0.028 0.004 0.012 8 o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. OUTLINE VERSION SOT108-1 REFERENCES IEC 076E06 JEDEC MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Fig 9. UBA2211 Package outline SOT108-1 (SO14) All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 15 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 13. Revision history Table 6. Revision history Release date 20110103 Data sheet status Objective data sheet Change notice Supersedes UBA2211 v.1 Document ID UBA2211 v.2 Modifications: • • • • • Minor text changes throughout the document. Figure 1 changed. Figure 7 changed. Table 3 changed. Table 5 changed. Objective data sheet - UBA2211 v.1 20100628 UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 16 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 14. Legal information 14.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. © NXP B.V. 2011. All rights reserved. 14.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or UBA2211 All information provided in this document is subject to legal disclaimers. Objective data sheet Rev. 2 — 3 January 2011 17 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 18 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 16. Contents 1 2 2.1 2.2 2.3 2.4 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 System integration . . . . . . . . . . . . . . . . . . . . . . 1 Burner lifetime . . . . . . . . . . . . . . . . . . . . . . . . . 2 Safety . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ease of use. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . 5 Start-up state . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Oscillation control . . . . . . . . . . . . . . . . . . . . . . . 5 Preheat state . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Ignition state . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Steady state . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Non-overlap time . . . . . . . . . . . . . . . . . . . . . . . 8 OverTemperature Protection (OTP) . . . . . . . . . 8 Minimum glow time control . . . . . . . . . . . . . . . . 8 Saturation Current Protection (SCP) . . . . . . . . 9 Capacitive Mode Protection (CMP) . . . . . . . . . 9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal characteristics . . . . . . . . . . . . . . . . . 11 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 11 Application information. . . . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 January 2011 Document identifier: UBA2211