X3G-OH047,005

X3G-OH047; X3T-OH047; X3G-OH048; X3T-OH048 Magnetic field sensor Rev. 1 — 4 April 2011 Product specification 1. Product profile 1.1 General description The X3G-OH047, X3G-OH048, X3T-OH047 and X3T-OH048 are sensitive magnetic field sensors, employing the magneto-resistive effect of thin film permalloy. The sensors contain two parallel supplied Wheatstone bridges at a relative angle of 45 to each other. A rotating magnetic field in the surface parallel to the chip (x-y plane) will deliver two independent sinusoidal output signals, one following a cos(2) and the other following a sin(2) function,  being the angle between sensor and field direction (see Figure 5 and Figure 6). The X3G-OH047, X3G-OH048, X3T-OH047 and X3T-OH048 are suited for high precision angle measurement applications under low field conditions (saturation field strength 25 kA/m). The sensors can be operated at any frequency between DC and 1 MHz. All type numbers shown in this data sheet are valid for a single-die (single sensor). The double-die has two magnetic field sensors with electrical and magnetic parameters which fulfill the specified single-die values and do not correlate to each other. Table 1. Product overview Type number Sensor Packing X3G-OH047 double-die sawn wafer; on foil X3G-OH048 single-die sawn wafer; on foil X3T-OH047 double-die taped on reel X3T-OH048 single-die taped on reel X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor 001aan663 KMZ44 is an internal name which is visible on the die Fig 1. Sensor die 1.2 Features and benefits      Accurate and reliable angle measurement Mechanical robustness, contactless principle Wear-free operation Accuracy independent of mechanical tolerances Extended temperature range 1.3 Applications  Steering angle and torsion  Headlight adjustment  Motor positioning X3G_T_OH047_048 Product specification  Window wipers  Fuel level  Mirror positioning All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 2 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 C; Hext = 25 kA/m; VCC = 5 V; unless otherwise specified. Symbol Parameter VCC supply voltage Conditions VM peak voltage see Figure 3 Voffset offset voltage per supply voltage; see Figure 3 TCV(offset) offset voltage temperature coefficient Rbridge per supply voltage; Tamb = 40 C to +150 C; see Figure 3 bridge resistance Min Typ Max Unit - 5 9 V [1][2] 60 67 75 mV [1] 2 - +2 mV/V [1][3] 2 - +2 (V/V)/K [1][4] 2.7 3.2 3.7 k [1] Applicable for bridge 1 and bridge 2. [2] VM = VO(max)  Voffset. Periodicity of VM: sin(2) and cos(2), respectively. [3] V offset  at 150 C  – V offset  at – 40 C  TC V  offset  = ------------------------------------------------------------------------------------------------150 C –  – 40 C  [4] Bridge resistance between pad 5 to pad 1 and pad 4 to pad 2. 2. Pinning information Table 3. Pinning Pad Symbol Description 1 ON1 output voltage bridge 1 2 ON2 output voltage bridge 2 3 GND common ground 4 OP2 output voltage bridge 2 5 OP1 output voltage bridge 1 6 VCC common bridge supply voltage Simplified outline 1 6 2 5 3 4 001aan662 X3G_T_OH047_048 Product specification All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 3 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor 3. Ordering information Table 4. Ordering information Type number Package Name Description Version X3G-OH047 bare die double-die; sawn wafer; on foil OL-X3G-OH047 X3G-OH048 bare die single-die; sawn wafer; on foil OL-X3G-OH048 X3T-OH047 bare die double-die; taped on reel OL-X3T-OH047 X3T-OH048 bare die single-die; taped on reel OL-X3T-OH048 4. Circuit diagram X3G-OH047/8; X3T-OH047/8 bridge 1 bridge 2 cos R11 R13 VCC OP1 VCC sin R21 R12 R14 R23 GND ON1 R22 R24 OP2 ON2 VO1 VO2 V V VOP1 V VON1 V VOP2 VON2 V V 008aaa264 Fig 2. Device and test circuit diagram 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCC supply voltage Hext external magnetic field strength Tamb ambient temperature [1] X3G_T_OH047_048 Product specification Conditions [1] Min Max Unit - 9 V 25 - kA/m 40 +150 C Minimum stimulating magnetic field parallel to the chip surface (x-y plane) to achieve specified angular accuracy. All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 4 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor 6. Characteristics Table 6. Characteristics Tamb = 25 C; Hext = 25 kA/m[1]; VCC = 5 V; unless otherwise specified. Symbol Parameter VCC supply voltage Conditions Min Typ Max Unit - 5 9 V VM peak voltage see Figure 3 [2][3] 60 67 75 mV TCVM peak voltage temperature coefficient Tamb = 40 C to +150 C [2][4] 0.30 0.36 0.42 %/K Rbridge bridge resistance [2][5] 2.7 3.2 3.7 k [2][6] 0.24 0.27 0.29 %/K [2] 2 - +2 mV/V TCR(bridge) bridge resistance temperature coefficient Tamb = 40 C to +150 C Voffset offset voltage per supply voltage; see Figure 3 TCV(offset) offset voltage temperature coefficient per supply voltage; Tamb = 40 C to +150 C; see Figure 3 [2][7] 2 - +2 (V/V)/K Vo(hys) hysteresis output voltage see Figure 4 [2][8] 0 0.05 0.18 %FS  angular velocity k amplitude synchronism TCk amplitude synchronism temperature coefficient  angular inaccuracy 0 - 1 MHz 98.9 100 101.1 % [10] 0.01 0 +0.01 %/K [11] 0 0.05 0.1 deg [9] Tamb = 40 C to +150 C [1] Minimum stimulating magnetic field parallel to the chip surface (x-y plane) to achieve angular inaccuracy. [2] Applicable for bridge 1 and bridge 2. [3] VM = VO(max)  Voffset. Periodicity of VM: sin(2) and cos(2), respectively. [4] V M  at 150 C  – V M  at – 40 C  TCVM = -------------------------------------------------------------------------------------------V M  at 25 C    150 C –  – 40 C   [5] Bridge resistance between pad 5 to pad 1 and pad 4 to pad 2. [6] R bridge  at 150 C  – R bridge  at – 40 C  TCR  bridge  = -----------------------------------------------------------------------------------------------------R bridge  at 25 C    150 C –  – 40 C   [7] V offset  at 150 C  – V offset  at – 40 C  TCV  offset  = ------------------------------------------------------------------------------------------------150 C –  – 40 C  [8] V O1  67.5 135  45  – V O1  67.5 45  135  V o  hys 1 = --------------------------------------------------------------------------------------------------------------------------2  V M1 V O2  22.5 90  0  – V O2  22.5 0  90  V o  hys 2 = --------------------------------------------------------------------------------------------------------------2  V M2 [9] V M1 k = --------V M2 k  at 150 C  – k  at – 40 C  [10] TCk = ---------------------------------------------------------------------------------------k  at 25 C    150 C –  – 40 C   [11]  =  real –  meas ; Voffset = 0 V; inaccuracy of angular measurement due to deviations from ideal sinusoidal characteristics, calculated from the third and fifth harmonics of the spectrum VO. X3G_T_OH047_048 Product specification All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 5 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor VO (mV) VO2 VM2 Voffset2 0 VO1 90 0 180 270 α (deg) 360 008aaa265 Fig 3. Output signals related to the direction of the magnetic field 008aaa266 VO (mV) Vo(hys)2 VO1 0 VO2 Vo(hys)1 0 Fig 4. X3G_T_OH047_048 Product specification 45 90 α (deg) 135 Definition of hysteresis All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 6 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor 7. Bare die outline y x R13 R24 R23 RS R11 R14 LDy bridge 1 (cos) α bridge 2 (sin) R22 R21 R12 RPy 1 6 2 3 Hext 5 4 LSy x = 0, y=0 PD LSx RPx LDx Fig 5. Table 7. X3G_T_OH047_048 Product specification 001aan691 Bare die outline (single die) Mechanical dimensions for Figure 5 Symbol Parameter x y Radius/diameter Unit LD die size 1150 1150 - m LS sawing lane width 60 60 - m RP reading point position 575 642 - m RS sensitive area radius - - 480 m PD pad diameter - - 110 m 1 position pad 1 108 230 - m 2 position pad 2 243 125 - m 3 position pad 3 489 95 - m 4 position pad 4 632 95 - m 5 position pad 5 900 125 - m 6 position pad 6 1032 200 - m All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 7 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor bridge 1 (cos) y bridge 2 (sin) x R13 R24 R23 RS R11 R14 LDy α R22 R21 R12 RPy 1 6 2 3 4 7 Hext 12 8 5 9 10 11 LSy x = 0, y=0 PD LSx RP1x RP2x LDx Fig 6. 001aan692 Bare die outline (double die) Table 8. Mechanical dimensions for Figure 6 Symbol Parameter x y LD die size 2360 1150 Radius/diameter Unit m LS sawing lane width 60 60 m RP1 reading point position 1 575 642 m m RP2 reading point position 2 1785 642 RS sensitive area radius - - 480 m PD pad diameter - - 110 m 1 position pad 1 108 230 m 2 position pad 2 243 125 m 3 position pad 3 489 95 m 4 position pad 4 632 95 m 5 position pad 5 900 125 m 6 position pad 6 1032 200 m 7 position pad 7 1318 230 m 8 position pad 8 1453 125 m 9 position pad 9 1699 95 m X3G_T_OH047_048 Product specification All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 8 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor Table 8. Mechanical dimensions for Figure 6 …continued Symbol Parameter x y 10 position pad 10 1842 95 m 11 position pad 11 2110 125 m 12 position pad 12 2242 200 m Table 9. Radius/diameter Unit Wafer dimensions Symbol Parameter Value Unit WD wafer diameter 150 mm WT wafer thickness 380  15 m 8. Packing information 8.1 Tape construction for X3G-OH047 and X3G-OH048 liner (PET) (38 μm) adhesive (acrylic) (10 μm) base film (PE) (65 μm) 019aab732 Fig 7. Tape construction Table 10. Material composition Parameter Content Typical value Unit Total thickness - 75 m Adhesion - 55 / 20 g/mm Ionic impurity Na+ 0.027 g/ml X3G_T_OH047_048 Product specification K+ < 0.004 g/ml Cl 0.045 g/ml All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 9 of 19 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors X3G_T_OH047_048 Product specification A 148 0.2 B 71.5 ±0.3 0.2 20 Ø3.175 h6 (2×) 2 2 B +2 0 R (2×) 2.5 +0.05 0 60° 30° 30° 1 A Ø2 27 0 -0.5 0.8 R1 max 1B 79.42 216 B01 ejector marks and sprue marks on this side below the surface min 0.05 max 0.2 Ø195 10 of 19 © NXP B.V. 2011. All rights reserved. 0.2 B Fig 8. Geometrical dimensions of frame 216 B 019aab727 Magnetic field sensor 0.2 B X3G-OH047/8; X3T-OH047/8 Rev. 1 — 4 April 2011 All information provided in this document is subject to legal disclaimers. 4 ±0.3 NXP Semiconductors X3G-OH047/8; X3T-OH047/8 Magnetic field sensor The barcode label consists of several numbers which are explained below: The first digits of the barcode show the batch number for example 69594.030 The last three digits of the barcode show the wafer number for example 69594.030 019aab728 Fig 9. X3G_T_OH047_048 Product specification Film Frame Carrier (FFC) with barcode label All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 11 of 19 NXP Semiconductors X3G-OH047/8; X3T-OH047/8 Magnetic field sensor double die parallel to flat flat Wafer position to frame 019aab731 Fig 10. Wafer position to frame and double die position to wafer X3G_T_OH047_048 Product specification All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 12 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor 8.2 Carrier tape for X3T-OH047 and X3T-OH048 B-B K Θ A0 A P K0 D1 G W W1 B0 B F B E A A-A T1 D0 P2 T P0 feed direction position of pad 1 019aab730 Fig 11. Tape outline, carrier tape X3T-OH048 Table 11. Dimensions for Figure 11 “Tape outline, carrier tape X3T-OH048” Item Symbol Specification Dimension [mm] Tolerance Overall dimensions Tape width W 8 0.1 Thickness K  1.2 - Distance G  0.75 - Diameter D0 1.5 0.1 Distance E 1.75 0.1 Pitch[1] P0 4 0.1 Length direction P2 2 0.05 Width direction F 3.5 0.05 Length A0 1.4 0.05 Width B0 1.4 0.05 Depth K0 0.8 0.05 Hole diameter D1 0.5 0.1 Pitch P 4 0.1 Sprocket holes Distance between center lines Compartments Device Outline X3T-OH048 Rotation   20 - T 0.25 0.07 Carrier tape antistatic Film thickness[2] X3G_T_OH047_048 Product specification All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 13 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor Table 11. Dimensions for Figure 11 “Tape outline, carrier tape X3T-OH048” …continued Item Symbol Specification Dimension [mm] Tolerance Cover tape Width W1  5.75 - Film thickness T1  0.1 - R  30 - Bending radius In winding direction [1] Cumulate pitch error 0.2 over 10 pitch. [2] Carbon loaded polystyrene 100 % recyclable. section A-A P2/P3 K0 P1 T D1 Θ A B T1 B G B0 W1 W F0/F2 E A D0 pad 1 D δ P0 section B-B δ detail Z 50:1 Z A0 feed direction measurement method of compartment dimensions 019aab729 Fig 12. Tape outline, carrier tape X3T-OH047 Table 12. Dimensions for Figure 12 “Tape outline, carrier tape X3T-OH047” Item Symbol Specification Dimension [mm] Tolerance Overall dimensions Tape width W 8 0.1 Distance G  0.75 - Diameter D0 1.5 0.1 Distance E 1.75 0.1 Pitch[1] P0 4 0.1 Sprocket holes X3G_T_OH047_048 Product specification All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 14 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor Table 12. Dimensions for Figure 12 “Tape outline, carrier tape X3T-OH047” …continued Item Symbol Specification Dimension [mm] Tolerance Distance between center lines Sprocket hole / cavity center P2 2 0.05 Sprocket hole / cavity hole P3 2 0.05 Sprocket hole / cavity center F0 3.5 0.05 Sprocket hole / cavity hole F2 3.5 0.05 Length A0 1.4 0.05 Width overall B0 2.7 0.05 Depth K0 0.5 0.05 Hole diameter D1 0.5 0.1 Pitch P1 4 0.1 Compartments Device Outline X3T-OH047 Rotation   15 - Film thickness[2] T 0.25 0.07 Bend   0.3 - Width W1 5.3 0.1 Film thickness T1 0.05 0.01 R  30 - Carrier tape antistatic Cover tape Bending radius In winding direction X3G_T_OH047_048 Product specification [1] Cumulate pitch error 0.2 over 10 pitch. [2] Carbon loaded polystyrene 100 % recyclable. All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 15 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor K0 P10 P0 D0 camber T P2/P3 E1 F0/F2 W B0 D1 A0 P1 diagonale pad 1 019aab734 Fig 13. Chip position and pad 1 location for X3T-OH048 pad 1 019aab733 Fig 14. Chip position and pad 1 location for X3T-OH047 9. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes X3G_T_OH047_048 v.1 20110404 Product specification - - X3G_T_OH047_048 Product specification All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 16 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 10.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be X3G_T_OH047_048 Product specification suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 17 of 19 X3G-OH047/8; X3T-OH047/8 NXP Semiconductors Magnetic field sensor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com X3G_T_OH047_048 Product specification All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 April 2011 © NXP B.V. 2011. All rights reserved. 18 of 19 NXP Semiconductors X3G-OH047/8; X3T-OH047/8 Magnetic field sensor 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.2 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 4 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Bare die outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information . . . . . . . . . . . . . . . . . . . . . 9 Tape construction for X3G-OH047 and X3G-OH048 . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Carrier tape for X3T-OH047 and X3T-OH048. 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 April 2011 Document identifier: X3G_T_OH047_048