KGF1146

E2Q0011-38-71 ¡ electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1146 ¡ electronic components KGF1146 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1146 is a two-stage small-signal UHF-band amplifier that features low current operation, high output power, and high isolation. The KGF1146 specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required. Because of the high isolation, the KGF1146 is an ideal part for a VCO-buffer amplifiers and an intermediate-stage amplifier for personal handy phones, such as cellular phones. FEATURES • Low current operation: 2.5 mA (max.) • High output power: 1.5 dBm (min.) • High isolation: –40 dB • Self-bias circuit configuration with built-in source capacitor • Package: 4PSOP PACKAGE DIMENSIONS 1.8±0.1 0.85±0.05 0.6 +0.1 –0.05 0.4 +0.1 –0.05 1.1±0.15 0.36 0.74 3.0±0.2 1.5±0.15 0.3 MIN 0 to 0.15 Package material 1.9±0.1 2.8±0.15 Lead frame material 0.125 +0.03 –0 Epoxy resin 42 alloy Solder plating 5 mm or more Pin treatment Solder plate thickness (Unit: mm) 1/7 ¡ electronic components KGF1146 MARKING (4) (3) BXX (1) (2) ALPHABETICAL NUMERICAL PRODUCT TYPE LOT NUMBER (1) Gate (2) Source (3) Drain (4) GND CIRCUIT D (3) (1) G S (2) 100 pF (4) GND APPLICATION EXAMPLE FOR PORTABLE PHONES GaAs device KGF1305 KGF1254/56 KGF1165 KGF1145/46 Transmission system intermediate frequency VCO Antenna Power amplifier Driver amplifler SAW filter Wide-band amplifier KGL2115 Buffer amplifier. Oscillator Divider 1 n Filter Duplexer Prescaler Prescaler KGL2115 Divider 1 n Filter KGF1175 KGF1155 Buffer amplifier. Oscillator Mixer amplifier VCO Head amplifier SAW filter Receiving system intermediate frequency KGF1145/46 2/7 ¡ electronic components KGF1146 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Unit V V mA mW °C °C Min. — –3 — — — –45 (Ta = 25°C) Max. 6 0.4 60 200 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Output power Isolation Symbol IGSS IGDO IDS(off) IDSS ID VGS(off) gm PO ISO Condition VGS = –3 V VGDO = –6 V VDS = 3 V, VGS = –2.0 V VDS = 3 V, VGS = 0 V (*1), PIN = –10 dBm VDS = 3 V, IDS = 120 mA VDS = 3 V, IDS = 2.0 mA (*1), PIN = –10 dBm (*1), PIN = –10 dBm Unit mA mA mA mA mA V mS dBm dB Min. — — — 15 — –1.5 8 1.5 40 Max. 12 60 120 — 2.5 –0.5 — — — *1 Self-bias condition: VDD = 5.0 ± 0.25 V, VG = 0 V, f = 850 MHz 3/7 ¡ electronic components KGF1146 RF CHARACTERISTICS Po vs. PIN 10 Output Power Po (dBm) 5 ID (mA) Operating Current 0 4 3 –10 2 –20 VDD = 4.75 V f = 850 MHz –30 –40 –30 –20 –10 0 1 0 Input Power PIN (dBm) 4/7 ¡ electronic components Typical S Parameters KGF1146 VDD = 5 V, ID = 1.85 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 1.016 1.008 1.002 0.995 0.988 0.981 0.973 0.963 0.956 0.945 0.938 0.929 0.918 0.906 0.897 0.880 0.868 0.855 0.847 0.830 0.819 0.804 0.792 0.778 0.770 0.754 –13.78 –16.42 –19.14 –21.80 –24.38 –26.95 –29.64 –32.24 –34.90 –37.58 –40.39 –42.98 –46.03 –48.76 –51.64 –54.61 –57.75 –60.87 –63.86 –66.88 –69.77 –72.90 –76.11 –79.41 –82.77 –85.91 3.144 3.184 3.091 3.060 2.952 2.961 2.741 2.687 2.557 2.481 2.316 2.187 2.009 1.872 1.775 1.710 1.650 1.562 1.499 1.470 1.413 1.364 1.337 1.304 1.287 1.238 –53.83 –65.20 –76.19 –84.59 –92.88 –98.49 –105.75 –111.43 –117.29 –122.72 –129.37 –134.82 –140.24 –151.35 –155.91 –161.08 –166.40 –171.49 –176.27 179.50 176.86 174.40 169.45 164.51 159.93 155.02 0.002 0.002 0.001 0.002 0.003 0.002 0.001 0.002 0.001 0.001 0.001 0.001 0.002 0.001 0.003 0.003 0.005 0.007 0.008 0.009 0.013 0.014 0.016 0.019 0.024 0.028 91.21 72.13 88.37 87.52 75.89 69.05 51.70 89.09 31.04 96.43 138.33 124.06 –115.76 –129.25 –128.46 –121.98 –139.31 –126.58 –127.50 –139.94 –129.23 –134.15 –136.16 –140.71 –134.62 –137.56 0.954 0.954 0.954 0.952 0.950 0.948 0.952 0.944 0.945 0.941 0.941 0.937 0.941 0.932 0.934 0.929 0.926 0.927 0.923 0.924 0.920 0.919 0.914 0.916 0.914 0.916 –7.09 –8.39 –9.92 –11.21 –12.84 –14.07 –15.34 –16.82 –18.09 –19.74 –20.90 –22.03 –23.52 –24.82 –26.27 –27.28 –28.67 –29.86 –30.90 –32.30 –33.42 –34.91 –35.62 –37.07 –37.84 –38.89 5/7 ¡ electronic components Typical S Parameters KGF1146 VDD = 5 V, ID = 1.85 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W j1.0 j0.5 j2.0 135 j0.2 j5.0 45 90 3.0 0.5 S22 0.5 3.0 S11 3.0 0.0 0.2 0.5 1.0 2.0 5.0 3.0 S21 180 5.0 4.0 3.0 2.0 1.0 0.5 0.01 0.02 0.03 0.04 0.05 0 S12 0.5 6/7 ¡ electronic components Test Circuit KGF1146 L1 L2 L2 L1 IN Cc W1 W1 Cc OUT W2 L3 C1 C2 L3 W2 Cc Vd L1 = 20 mm L2 = 8 mm L3 = 10 mm W1 = 1 mm W2 = 3 mm Cc = 1000 pF C1, C2: Trimmer Capacitor (Murata Giga-Trimmer, max. 4.5 pF) Substrate parameters er = 2.6 h = 1.6 mm C1 and C2 are tuned to obtain maximum output power. 7/7