KGF1283

E2Q0026-38-72 ¡ electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1283 ¡ electronic components KGF1283 Power FET (Plastic Package Type) GENERAL DESCRIPTION The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET that features high efficiency, high output power, and high gain. The KGF1283 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 26.5 dBm), high gain, and plastic package, the KGF1283 is ideal as a transmitter-driver amplifier for personal handy phones. FEATURES • High output power: 26.5 dBm (min.) • High efficiency: 60% (typ.) • High linear gain: 17 dB (typ.) • Package: 3PMMP (SOT-89 type) PACKAGE DIMENSIONS 4.5±0.1 1.6 +0.15 –0.10 1.5±0.1 2.5±0.1 1±0.2 4±0.2 0.48 +0.08 –0.05 0.4 +0.08 –0.05 1.5±0.1 1.5±0.1 3±0.1 0.4 +0.08 –0.05 0.39±0.05 Package material Lead frame material Pin treatment Solder plate thickness Epoxy resin Cu Solder plating 5 mm or more (Unit: mm) 1/7 ¡ electronic components KGF1283 MARKING (1) D1 XX PRODUCT TYPE (2) LOT NUMBER (NUMERICAL or ALPHABETICAL) (3) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/7 ¡ electronic components KGF1283 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C Ta = Tc = 25°C — — Unit V V A W °C °C Min. — –6.0 — — — –45 Max. 10 0.4 0.8 2.5 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD GLIN Rth Condition VGS = –6 V VGD = –16 V VDS = 10 V, VGS = –6 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 1.4 mA (*1), PIN = 15 dBm (*1), PIN = 15 dBm (*1), PIN = –5 dBm Channel to case Unit mA mA mA mA V dBm % dB °C/W Min. — — — 450 –3.0 26.5 50 — — Typ. — — — — — 27.5 60 17.0 35 Max. 50 150 500 — –2.0 — — — — *1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 70 mA 3/7 ¡ electronic components KGF1283 RF CHARACTERISTICS 4/7 ¡ electronic components KGF1283 Typical S Parameters VDS = 5.8 V, VGS = –1.71 V, IDS = 70 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.928 0.913 0.902 0.892 0.882 0.876 0.868 0.861 0.854 0.846 0.842 0.835 0.832 0.819 0.818 0.808 0.803 0.795 0.786 0.781 0.773 0.766 0.760 0.751 0.745 0.742 –75.55 –86.65 –96.40 –105.12 –112.97 –119.78 –126.19 –131.83 –137.11 –141.95 –146.44 –150.81 –155.00 –158.72 –162.30 –166.12 –169.41 –172.93 –176.05 –179.23 177.57 174.58 171.51 168.56 165.87 162.94 6.052 5.575 5.152 4.788 4.454 4.153 3.895 3.657 3.464 3.268 3.107 2.959 2.816 2.701 2.571 2.487 2.375 2.297 2.200 2.119 2.061 1.982 1.924 1.861 1.785 1.742 128.22 121.14 114.59 108.53 103.41 98.19 93.46 89.01 84.72 80.66 76.72 73.04 69.53 65.53 62.36 58.83 55.18 52.11 48.43 45.83 42.29 39.28 36.07 32.88 30.00 27.08 0.041 0.045 0.049 0.053 0.056 0.058 0.060 0.063 0.064 0.066 0.067 0.069 0.070 0.071 0.073 0.073 0.075 0.076 0.077 0.078 0.079 0.080 0.082 0.082 0.084 0.084 53.15 48.09 43.65 40.10 36.55 33.64 31.03 28.58 26.57 24.29 22.61 20.63 19.19 17.77 15.95 15.15 13.37 12.15 10.98 9.29 8.86 7.26 5.97 4.70 2.97 2.19 0.216 0.238 0.256 0.271 0.283 0.292 0.299 0.306 0.311 0.315 0.318 0.320 0.323 0.325 0.324 0.327 0.326 0.328 0.327 0.328 0.328 0.327 0.326 0.327 0.328 0.329 –140.73 –143.48 –146.18 –148.79 –150.77 –153.12 –154.81 –156.91 –158.46 –159.96 –161.51 –163.03 –164.39 –165.64 –167.18 –168.37 –169.82 –171.17 –172.30 –173.76 –175.26 –176.65 –177.97 –179.20 179.36 177.71 5/7 ¡ electronic components KGF1283 Typical S Parameters VDS = 5.8 V, VGS = –1.71 V, IDS = 70 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 ¡ electronic components KGF1283 Test Circuit and Bias Configuration for KGF1283 at 850 MHz VGS CF CB CB CF VDS RFC IN CC C1 T1 T2 (1) (2) (3) T3 T4 RFC OUT CC C2 C3 f = 850 MHz T1: Z0 = 80 W, E = 7.3 deg T2: Z0 = 80 W, E = 36.6 deg T3: Z0 = 50 W, E = 27.0 deg T4: Z0 = 50 W, E = 18.0 deg C1 = 1.0 pF, C2 = 5.0 pF, C3 = 1.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 200 nH 7/7