KGF1284

E2Q0027-38-72 ¡ electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1284 ¡ electronic components KGF1284 Power FET (Plastic Package Type) GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF-to L-band. This device features high efficiency, high output power, and high gain. The KGF1284 specifications are guaranteed to a fixed matching circuit for 3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 21.5 dBm), high gain, and plastic package, the KGF1284 is ideal as a transmitter-driver amplifier for personal handy phones, such as digital keying cordless phones. FEATURES • Specifications guaranteed to a fixed matching circuit for 3.4 V, 1.9 GHz • High output power: 21.5 dBm (min.) at 1.9 GHz • High efficiency: 50% (typ.) at 1.9 GHz • High linear gain: 12 dB (typ.) at 1.9 GHz • Package: 3PMMP (SOT-89 type) PACKAGE DIMENSIONS 4.5±0.1 1.6 +0.15 –0.10 1.5±0.1 2.5±0.1 1±0.2 4±0.2 0.48 +0.08 –0.05 0.4 +0.08 –0.05 0.39±0.05 0.4 +0.08 –0.05 Package material Lead frame material Pin treatment Solder plate thickness Epoxy resin Cu Solder plating 5 mm or more 1.5±0.1 1.5±0.1 3±0.1 (Unit: mm) 1/7 ¡ electronic components KGF1284 MARKING (1) D2 XX PRODUCT TYPE (2) LOT NUMBER (NUMERICAL or ALPHABETICAL) (3) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/7 ¡ electronic components KGF1284 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C Ta = Tc = 25°C — — Unit V V A W °C °C Min. — –5.0 — — — –45 Max. 7.0 0.4 0.8 2.5 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD GLIN Rth Condition VGS = –5 V VGD = –12 V VDS = 7 V, VGS = –5 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 1.4 mA (*1), PIN = 12 dBm (*1), PIN = 12 dBm (*1), PIN = –5 dBm Channel to case Unit mA mA mA mA V dBm % dB °C/W Min. — — — 450 –3.0 21.5 45 — — Typ. — — — — — 22.5 50 12.0 35 Max. 50 150 500 — –2.0 — — — — *1 Condition: f = 1.9 GHz, VDS = 3.4 V, IDSQ = 70 mA 3/7 ¡ electronic components KGF1284 RF CHARACTERISTICS 4/7 ¡ electronic components KGF1284 Typical S Parameters VDS = 3.4 V, VGS = –1.50 V, IDS = 70 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.929 0.912 0.898 0.883 0.876 0.866 0.859 0.851 0.844 0.838 0.832 0.825 0.819 0.812 0.806 0.799 0.793 0.785 0.778 0.771 0.764 0.758 0.750 0.742 0.736 0.733 –78.89 –90.54 –100.54 –109.32 –117.13 –123.86 –130.11 –135.65 –140.78 –145.60 –149.99 –154.26 –158.20 –161.99 –165.60 –169.02 –172.66 –175.81 –178.99 177.76 174.95 171.70 168.79 165.98 163.16 160.53 5.276 5.192 4.906 4.758 4.432 4.255 4.020 3.790 3.588 3.381 3.226 3.066 2.908 2.809 2.666 2.570 2.470 2.367 2.285 2.194 2.129 2.067 1.991 1.932 1.854 1.808 128.00 120.39 113.48 107.25 102.09 96.87 92.12 87.84 83.54 79.70 75.89 72.32 68.85 65.26 61.68 58.72 54.67 52.14 48.53 45.78 42.86 39.50 36.47 33.51 30.44 27.91 0.042 0.047 0.051 0.055 0.057 0.060 0.062 0.064 0.065 0.067 0.069 0.070 0.072 0.073 0.074 0.076 0.077 0.078 0.080 0.080 0.082 0.082 0.085 0.085 0.087 0.087 51.45 46.56 42.16 38.55 35.18 32.38 30.00 27.73 25.74 23.56 22.15 20.26 18.89 17.33 16.01 14.72 13.41 12.04 10.71 9.42 8.56 7.12 5.91 4.43 2.92 1.82 0.267 0.290 0.309 0.323 0.335 0.343 0.350 0.355 0.360 0.363 0.364 0.366 0.366 0.369 0.366 0.369 0.366 0.367 0.365 0.365 0.364 0.361 0.360 0.359 0.358 0.360 –148.33 –151.44 –153.97 –156.56 –158.61 –160.77 –162.66 –164.65 –166.30 –168.00 –169.53 –171.09 –172.68 –174.12 –175.62 –177.03 –178.53 179.93 178.65 177.06 175.54 174.11 172.44 171.33 169.80 168.19 5/7 ¡ electronic components KGF1284 Typical S Parameters VDS = 3.4 V, VGS = –1.50 V, IDS = 70 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 ¡ electronic components KGF1284 Test Circuit and Bias Configuration for KGF1284 at 1.9 GHz VGS CF CB CB CF VDS RFC IN CC C1 T1 T2 T3 (1) (2) (3) T4 T5 T6 RFC OUT CC C2 f = 1.9 GHz T1: Z0 = 80 W, E = 53 deg T4: Z0 = 30 W, E = 53 deg T2: Z0 = 10 W, E = 32 deg T5: Z0 = 12 W, E = 32 deg T3: Z0 = 30 W, E = 53 deg T6: Z0 = 50 W, E = 54 deg C1 = 1.0 pF, C2 = 2.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 60 nH 7/7