KGF1313

E2Q0029-38-72 ¡ electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1313 ¡ electronic components KGF1313 Power FET (Plastic Package Type) GENERAL DESCRIPTION The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF-band to the L-band. This device features high efficiency and high output power. The KGF1313 specifications are guaranteed to a fixed matching circuit for 3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 27 dBm), and plastic package, the KGF1313 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as digital keying cordless phones. FEATURES • Specifications guaranteed to a fixed matching circuits for 3.4 V, 1.9 GHz • High output power: 27 dBm (min.) at 1.9 GHz • High efficiency: 50% (typ.) at 1.9 GHz • Low thermal resistance: 23°C/W (typ.) • Package: 3PMMP (SOT-89 type) PACKAGE DIMENSIONS 4.5±0.1 1.6 +0.15 –0.10 1.5±0.1 2.5±0.1 1±0.2 4±0.2 0.48 +0.08 –0.05 0.4 +0.08 –0.05 0.39±0.05 0.4 +0.08 –0.05 Package material Lead frame material Pin treatment Solder plate thickness Epoxy resin Cu Solder plating 5 mm or more 1.5±0.1 1.5±0.1 3±0.1 (Unit: mm) 1/7 ¡ electronic components KGF1313 MARKING (1) P1 XX PRODUCT TYPE (2) LOT NUMBER (MUMERICAL or ALPHABETICAL) (3) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/7 ¡ electronic components KGF1313 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C Ta = Tc = 25°C — — Unit V V A W °C °C Min. — –5.0 — — — –45 Max. 7.0 0.4 2.0 4.5 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD GLIN Rth Condition VGS = –5 V VGD = –12 V VDS = 7 V, VGS = –5 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 4.0 mA (*1), PIN = 20 dBm (*1), PIN = 20 dBm (*1), PIN = 0 dBm Channel to case Unit mA mA mA A V dBm % dB °C/W Min. — — — 1.3 –3.0 27.0 45 — — Typ. — — — — — 27.5 50 9.5 15 Max. 100 500 1500 — –2.0 — — — — *1 Condition: f = 1.9 GHz, VDS = 3.4 V, IDSQ = 200 mA 3/7 ¡ electronic components KGF1313 RF CHARACTERISTICS 4/7 ¡ electronic components Typical S Parameters KGF1313 VDS = 3.4 V, VGS = –1.43 V, IDS = 200 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.929 0.926 0.925 0.923 0.923 0.921 0.919 0.917 0.915 0.913 0.911 0.907 0.903 0.901 0.896 0.894 0.890 0.885 0.882 0.876 0.875 0.870 0.866 0.863 0.858 0.858 –144.45 –151.64 –157.14 –161.46 –165.18 –168.30 –171.07 –173.67 –175.87 –178.12 179.76 177.80 175.91 174.04 172.38 170.48 168.74 167.12 165.38 163.78 162.12 160.47 158.91 157.28 155.62 153.95 4.159 3.643 3.189 2.833 2.543 2.314 2.121 1.959 1.823 1.702 1.602 1.511 1.428 1.361 1.292 1.236 1.180 1.130 1.086 1.043 1.011 0.972 0.942 0.911 0.875 0.856 98.07 93.23 88.93 85.11 81.97 78.72 75.71 72.79 70.07 67.46 64.62 62.17 59.34 56.91 54.42 51.87 49.30 47.08 44.40 42.64 39.67 37.75 35.06 33.01 30.62 28.46 0.030 0.031 0.032 0.033 0.034 0.035 0.036 0.037 0.038 0.040 0.041 0.042 0.043 0.044 0.046 0.047 0.048 0.049 0.051 0.052 0.053 0.054 0.056 0.057 0.059 0.059 29.22 27.84 26.84 26.40 26.26 25.70 25.89 25.53 25.89 25.44 25.55 25.16 24.95 24.92 24.41 24.23 23.93 23.58 23.06 22.40 21.91 21.43 20.25 19.79 18.82 18.59 0.715 0.717 0.720 0.721 0.721 0.719 0.719 0.718 0.716 0.717 0.713 0.714 0.708 0.710 0.704 0.706 0.700 0.702 0.697 0.697 0.692 0.691 0.689 0.687 0.688 0.683 –178.78 179.91 178.56 177.48 176.49 175.41 174.68 173.46 172.74 171.75 170.66 169.82 168.55 167.77 166.73 165.70 164.81 163.51 162.59 161.49 160.22 159.44 158.03 157.02 155.85 154.65 5/7 ¡ electronic components Typical S Parameters KGF1313 VDS = 3.4 V, VGS = –1.43 V, IDS = 200 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 ¡ electronic components Test Circuit and Bias Configuration for KGF1313 at 1.9 GHz KGF1313 VGS CF CB CB CF VDS RFC IN CC C1 T1 T2 T3 (1) (2) (3) T4 T5 T6 RFC OUT CC f = 1.9 GHz T1: Z0 = 80 W, E = 77 deg T4: Z0 = 30 W, E = 53 deg T2: Z0 = 10 W, E = 18 deg T5: Z0 = 27 W, E = 42 deg T3: Z0 = 30 W, E = 53 deg T6: Z0 = 80 W, E = 43 deg C1 = 0.8 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 60 nH 7/7