KGF1323

E2Q0030-38-72 ¡ electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1323 ¡ electronic components KGF1323 Power FET(Plastic Package Type) GENERAL DESCRIPTION The KGF1323, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET that features high efficiency and high output power. The KGF1323 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 33 dBm), and plastic package, the KGF1323 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as TDMA-type cellular phones. FEATURES • High output power: 33 dBm (min.) • High efficiency: 70% (typ.) • Low thermal resistance: 23°C/W (typ.) • Package: 3PMMP (SOT-89 type) PACKAGE DIMENSIONS 4.5±0.1 1.6 +0.15 –0.10 1.5±0.1 2.5±0.1 1±0.2 4±0.2 0.48 +0.08 –0.05 0.4 +0.08 –0.05 1.5±0.1 1.5±0.1 3±0.1 0.4 +0.08 –0.05 0.39±0.05 Package material Lead frame material Pin treatment Solder plate thickness Epoxy resin Cu Solder plating 5 mm or more (Unit: mm) 1/7 ¡ electronic components KGF1323 MARKING (1) P2 XX PRODUCT TYPE (2) LOT NUMBER (NUMERICAL or ALPHABETICAL) (3) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/7 ¡ electronic components KGF1323 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C Ta = Tc = 25°C — — Unit V V A W °C °C Min. — –6.0 — — — –45 Max. 10 0.4 3.0 5 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD GLIN Rth Condition VGS = –6 V VGD = –16 V VDS = 10 V, VGS = –6 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 4.8 mA (*1), PIN = 22 dBm (*1), PIN = 22 dBm (*1), PIN = 0 dBm Channel to case Unit mA mA mA A V dBm % dB °C/W Min. — — — 2.0 –3.8 33.0 60 — — Typ. — — — — — 33.5 70 15.0 14 Max. 100 500 1500 — –2.8 — — — — *1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 240 mA 3/7 ¡ electronic components KGF1323 RF CHARACTERISTICS 4/7 ¡ electronic components Typical S Parameters KGF1323 VDS = 5.8 V, VGS = –2.80 V, IDS = 240 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.921 0.921 0.920 0.917 0.917 0.914 0.913 0.911 0.909 0.907 0.903 0.901 0.899 0.893 0.892 0.888 0.885 0.881 0.875 0.873 0.869 0.866 0.863 0.856 0.854 0.852 –154.27 –160.15 –164.62 –168.17 –171.22 –173.90 –176.22 –178.42 179.67 177.63 175.71 173.93 172.15 170.52 169.01 167.01 165.66 163.90 162.38 160.75 159.09 157.56 155.95 154.35 152.84 151.31 3.891 3.291 2.854 2.519 2.250 2.041 1.871 1.721 1.599 1.491 1.404 1.324 1.248 1.188 1.127 1.077 1.027 0.983 0.944 0.906 0.876 0.844 0.816 0.789 0.756 0.736 91.63 87.28 82.96 79.31 76.01 72.42 69.42 66.28 63.39 60.39 57.29 54.72 51.47 48.90 45.99 43.37 40.36 37.89 35.01 32.96 29.90 27.58 24.58 22.20 19.48 17.09 0.037 0.038 0.039 0.040 0.040 0.041 0.042 0.043 0.044 0.045 0.046 0.047 0.048 0.048 0.050 0.051 0.052 0.053 0.055 0.055 0.057 0.058 0.060 0.061 0.063 0.063 20.87 19.65 18.86 18.39 18.30 17.74 17.99 17.72 18.08 17.76 17.98 17.75 17.57 17.85 17.23 17.60 17.24 16.83 16.62 16.02 16.20 15.62 14.77 14.20 12.48 11.90 0.655 0.657 0.659 0.661 0.660 0.661 0.660 0.660 0.660 0.661 0.658 0.660 0.654 0.660 0.653 0.658 0.651 0.655 0.650 0.652 0.649 0.649 0.649 0.646 0.649 0.646 –176.53 –178.18 –179.48 179.28 178.41 177.38 176.61 175.52 174.76 173.75 172.81 171.94 170.90 170.04 169.08 168.02 167.14 165.92 164.99 163.98 162.58 161.68 160.24 159.52 158.10 157.17 5/7 ¡ electronic components Typical S Parameters KGF1323 VDS = 5.8 V, VGS = –2.80 V, IDS = 240 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 ¡ electronic components KGF1323 Test Circuit and Bias Configuration for KGF1323 at 850 MHz VGS CF CB CB CF VDS RFC IN CC C1 T1 T2 (1) (2) (3) T3 T4 RFC OUT CC C2 C3 C4 f = 850 MHz T1: Z0 = 50 W, E = 28.5 deg T2: Z0 = 50 W, E = 16.5 deg T3: Z0 = 50 W, E = 15.0 deg T4: Z0 = 50 W, E = 30.0 deg C1 = 2.0 pF, C2 = 10.0 pF, C3 = 5.0 pF, C4 = 1.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 200 nH 7/7