KGF1323F

E2Q0032-38-72 ¡ electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1323F ¡ electronic components KGF1323F Power FET (Plastic Package Type) GENERAL DESCRIPTION The KGF1323F, housed in a SOT-89 type plastic-mold package, is a KGF1323-based discrete GaAs power FET that features high efficiency and high output power. The KGF1323F specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Specified specifically for analog cellular applications, the KGF1323F is ideally suited to applications requiring a transmitter-final-stage amplifier for a cellular phone, such as AMPS and TACS. The device is directly mounted to a printed circuit board. FEATURES • Specifications guaranteed to a fixed matching circuit for 5.8 V and 850 MHz • High output power: 31.5 dBm (min.) • High efficiency: 70% (typ.) • Low thermal resistance: 14°C/W (typ.) • Package: 3PMMP (SOT-89 type) PACKAGE DIMENSIONS 4.5±0.1 1.6 +0.15 –0.10 1.5±0.1 2.5±0.1 1±0.2 4±0.2 0.48 +0.08 –0.05 0.4 +0.08 –0.05 0.39±0.05 0.4 +0.08 –0.05 Package material Lead frame material Pin treatment Solder plate thickness Epoxy resin Cu Solder plating 5 mm or more 1.5±0.1 1.5±0.1 3±0.1 (Unit: mm) 1/6 ¡ electronic components KGF1323F MARKING (1) KX XX (1) Gate (2) Source (3) Drain (2) PRODUCT TYPE (3) LOT NUMBER (NUMERICAL or ALPHABETICAL) CIRCUIT Drain(3) Gate(1) Source(2) 2/6 ¡ electronic components KGF1323F ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C Ta = Tc = 25°C — — Unit V V A W °C °C Min. — –6.0 — — — –45 Max. 10 0.4 3.0 5.0 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain Breakdown Voltage Drain-source cut-off current Drain current Gate bias Q point Output power Drain efficiency Drain efficiency 2 Thermal resistance Symbol IGSS VGDO IDS(off) IDSS VGSQ PO hD hD2 Rth Condition VGS = –6 V VGD = –1.5 mA VDS = 10 V, VGS = –6 V VDS = 1.5 V, VGS = 0 V VDS = 5.8 V, IDSQ = 175 mA (*1) (*1) (*2) Channel to case Unit mA V mA A V dBm % % °C/W Min. — 22 — 2.0 –3.35 31.5 70 47 — Typ. — — — — — — — — 14 Max. 10 — 1.5 — –2.45 — — — — *1 Condition: VDS = 5.8 V, IDSQ = 175 mA, PIN = 20 dBm, f = 850 MHz *2 Condition: VDS = 5.8 V, IDSQ = 175 mA, PO = 29 dBm, f = 850 MHz 3/6 ¡ electronic components KGF1323F RF CHARACTERISTICS 4/6 ¡ electronic components Typical S Parameters KGF1323F VDS = 5.8 V, IDS = 175 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.918 0.911 0.909 0.907 0.908 0.906 0.905 0.907 0.904 0.901 0.904 0.901 0.902 0.899 0.899 0.896 0.900 0.899 0.890 0.893 0.890 0.886 0.882 0.879 0.879 0.874 –152.58 –158.56 –163.14 –166.95 –170.01 –172.61 –174.70 –177.12 –178.89 178.99 177.88 176.00 174.31 173.54 172.04 170.57 169.20 167.90 166.39 165.43 164.14 162.85 161.51 160.27 159.04 158.24 4.044 3.392 2.943 2.589 2.314 2.074 1.904 1.739 1.608 1.513 1.390 1.315 1.227 1.172 1.116 1.062 1.008 0.968 0.923 0.895 0.851 0.827 0.798 0.764 0.741 0.718 92.67 88.12 83.68 79.92 76.67 73.48 70.19 67.52 64.93 61.44 58.93 56.03 53.45 50.80 48.01 45.79 42.67 40.33 37.86 35.74 33.31 31.00 28.17 25.77 23.19 20.45 0.037 0.039 0.039 0.039 0.040 0.040 0.040 0.041 0.041 0.042 0.042 0.043 0.043 0.044 0.044 0.045 0.045 0.045 0.046 0.046 0.048 0.048 0.049 0.051 0.052 0.052 18.00 14.56 13.30 12.33 12.22 11.79 10.71 10.57 9.87 10.46 9.76 9.28 9.51 10.06 8.80 8.22 8.42 8.69 7.98 7.80 7.43 7.74 7.31 6.78 5.58 4.92 0.635 0.643 0.645 0.646 0.650 0.651 0.653 0.656 0.658 0.659 0.657 0.663 0.664 0.660 0.662 0.662 0.670 0.665 0.672 0.666 0.664 0.670 0.668 0.667 0.667 0.667 –176.75 –178.52 –179.76 178.79 177.66 176.63 175.74 174.75 174.03 173.25 171.43 171.43 170.68 169.99 169.16 168.23 167.54 167.10 165.69 165.44 164.17 163.42 162.98 161.72 160.96 160.39 5/6 ¡ electronic components KGF1323F Typical S Parameters VDS = 5.8 V, IDS = 175 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W j1.0 j0.5 j2.0 135 90 45 0.5 j0.2 3.0 3.0 j5.0 S22 S21 3.0 180 5.0 4.0 3.0 2.0 1.0 0.5 S12 S11 0.5 0.5 3.0 0 0.02 0.04 0.06 0.08 0.10 0.0 0.2 0.5 1.0 2.0 5.0 6/6