KGF1521

E2Q0018-38-71 ¡ electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1521 ¡ electronic components KGF1521 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1521 is a high-performance GaAs FET small-signal amplifier for L-band frequencies that features low voltage operation, low current operation, low noise, and low distortion. The KGF1521 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high 3rd-order intercept point, even at its low operating current, the KGF1521 is ideal as a small-signal amplifier for L-band personal handy phones, such as digital keying cordless phones that require low intermodulation properties. FEATURES • Low voltage and low current operation: 3 V, 2.5 mA (max.) • Specifications guaranteed to a fixed matching circuit for 3 V, 1.9 GHz • Low noise figure: 1.8 dB (typ.) at 1.9 GHz • High linear gain: 12.5 dB (typ.) at 1.9 GHz • High output power: 1 dB compression point = 0 dBm (typ.) at 1.9 GHz • Low distortion: 3rd-order intercept point = 12 dBm (typ.) at 1.9 GHz • Self-bias circuit configuration with built-in source capacitor • Package: 4PSOP PACKAGE DIMENSIONS 1.8±0.1 0.85±0.05 0.6 +0.1 –0.05 0.4 +0.1 –0.05 1.1±0.15 0.36 0.74 3.0±0.2 1.5±0.15 0.3 MIN 0 to 0.15 Package material 1.9±0.1 2.8±0.15 Lead frame material 0.125 +0.03 –0 Epoxy resin 42 alloy Solder plating 5 mm or more Pin treatment Solder plate thickness (Unit: mm) 1/8 ¡ electronic components KGF1521 MARKING (4) (3) FXX (1) (2) NUMERICAL NUMERICAL PRODUCT TYPE LOT NUMBER (1) Gate (2) Source (3) Drain (4) GND CIRCUIT D(3) G(1) S(2) GND(4) 2/8 ¡ electronic components KGF1521 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C Ta = 25°C — — Unit V V mA mW °C °C Min. — –3.0 — — — –45 Max. 4.0 0.4 50 200 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Noise figure Linear gain Output power Third-order intercept point Symbol IGSS IGDO IDS(off) IDSS ID VGS(off) gm F GLIN PO1 IP3 Condition VGS = –3 V VGD = –6 V VDS = 3 V, VGS = –2 V VDS = 3 V, VGS = 0 V (*1), PIN = –20 dBm VDS = 3 V, IDS = 100 mA VDS = 3 V, IDS = 2 mA (*1) (*1), PIN = –20 dBm (*1) (*2), f2 = 1.901 GHz Unit mA mA mA mA mA V mS dB dB dBm dBm Min. — — — 15 — –1.4 14 — 11.0 –3.0 — Typ. — — — 25 2.0 — 17 1.8 12.5 0 12 Max. 30 30 30 — 2.5 –0.6 — 2.5 — — — *1 Self-bias condition: VDD = 3 V ± 0.3 V, VG = 0 V, f = 1.9 GHz 3/8 ¡ electronic components KGF1521 RF CHARACTERISTICS 4/8 ¡ electronic components KGF1521 5/8 ¡ electronic components Typical S Parameters KGF1521 VDD = 3 V, ID = 2.23 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 1.006 1.004 1.001 0.998 0.995 0.992 0.987 0.983 0.978 0.972 0.966 0.959 0.950 0.941 0.935 0.924 0.915 0.905 0.893 0.881 0.866 0.852 0.837 0.821 0.806 0.790 –9.13 –10.96 –12.83 –14.68 –16.53 –18.33 –20.18 –22.02 –23.88 –25.70 –27.62 –29.46 –31.22 –33.22 –35.13 –37.04 –38.95 –40.60 –42.34 –44.23 –15.91 –47.73 –49.40 –51.16 –52.74 –54.25 1.330 1.338 1.346 1.353 1.354 1.359 1.359 1.369 1.374 1.376 1.388 1.397 1.393 1.409 1.418 1.434 1.440 1.435 1.440 1.458 1.448 1.455 1.447 1.467 1.454 1.462 176.30 172.44 168.98 165.93 163.08 160.07 157.16 154.84 152.28 149.79 146.67 144.51 141.98 138.88 136.15 133.84 131.23 128.21 125.19 122.85 120.01 116.96 114.13 111.27 108.42 105.45 0.010 0.012 0.013 0.015 0.016 0.018 0.018 0.020 0.021 0.022 0.022 0.022 0.023 0.023 0.023 0.022 0.023 0.024 0.023 0.023 0.023 0.024 0.025 0.027 0.029 0.032 77.66 75.14 74.67 74.75 74.68 72.86 73.49 72.57 71.18 70.96 71.48 70.80 70.04 71.52 72.15 75.12 80.13 80.50 82.84 87.86 91.51 97.20 105.76 110.78 118.12 122.68 0.939 0.937 0.934 0.933 0.932 0.930 0.927 0.926 0.925 0.922 0.920 0.918 0.914 0.911 0.910 0.905 0.903 0.900 0.894 0.892 0.887 0.883 0.879 0.874 0.871 0.868 –6.40 –7.42 –8.59 –9.60 –10.71 –11.75 –12.88 –13.89 –14.99 –16.04 –17.08 –18.12 –18.95 –20.20 –21.19 –22.16 –23.29 –24.24 –25.15 –26.13 –26.95 –27.96 –28.80 –29.63 –30.58 –31.21 6/8 ¡ electronic components Typical S Parameters KGF1521 VDD = 3 V, ID = 2.23 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 7/8 ¡ electronic components Test Circuit and Bias Configuration for KGF1521 at 1.9 GHz KGF1521 CC IN T1 T2 T3 (1) KGF 1521 T4 C1 (4) T9 (3) T5 T6 T7 CC OUT RG T8 C2 RFC VDD CB CF T1: Z0 = 75 W, E = 23 deg T5: Z0 = 100 W, E = 87 deg T2: Z0 = 100 W, E = 2 deg T6: Z0 = 100 W, E = 25 deg T3: Z0 = 100 W, E = 68 deg T7: Z0 = 75 W, E = 20 deg T4 = T8: Z0 = 100 W, E = 10 deg T9: Z0 = 100 W, E = 5 deg C1 = 1.40 pF, C2 = 1.35 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 60 nH, RG = 1000 W 8/8