KGF1608

E2Q0042-27-X2 ¡ electronic components Pr y ar in im el ¡ electronic components KGF1608 Power FET (Ceramic Package Type) KGF1608 This version: Jan. 1998 Previous version: Jun. 1996 GENERAL DESCRIPTION The KGF1608, housed in a SMD type ceramic package, is a discrete GaAs power FET that features high efficiency and high output power. The KGF1608 specifications are guaranteed to a fixed matching circuit for 3.4 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency (70% min.) , high output power (more than 33 dBm), the KGF1608 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as 3-V digital cellular phones. FEATURES • High output power: 33 dBm (min.) • High efficiency: 70% (min.) • Specifications guaranteed to a fixed matching circuit for 3.4 V and 850 MHz • Low thermal resistance: 18°C/W (typ.) • Package: 3PFP 1/8 ¡ electronic components KGF1608 MARKING (1) (2) K1608 XXXX PRODUCT NAME LOT NUMBER MONTHLY LOT NUMBER (3) PRODUCTION MONTH (1to9,X,Y,Z) PRODUCTION YEAR (LOWEST DIGIT) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/8 ¡ electronic components KGF1608 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C Ta = Tc = 25°C — — Unit V V A W °C °C Min. — –5 — — — –45 Max. 8 0.4 5.5 5 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source cut-off current Drain current Gate-source cut-off voltage Output power Drain efficiency Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD Rth Condition VGS = –5 V VGD = –13 V VDS = 8 V, VGS = –5 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 11.2 mA (*1) PIN = 26 dBm (*1) PIN = 26 dBm Channel to case Unit mA mA mA A V dBm % °C/W Min. — — — 4.5 –3.0 33 70 — Typ. — — — — — — — 18 Max. 100 3 3 — –2.0 — — — *1 Condition: f = 850 MHz, VDS = 3.4 V, IDSQ = 400 mA, 3/8 ¡ electronic components KGF1608 RF CHARACTERISTICS 4/8 ¡ electronic components KGF1608 5/8 ¡ electronic components Typical S Parameters KGF1608 VDS = 3.4 V, IDS = 560 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.958 0.959 0.958 0.955 0.957 0.954 0.953 0.954 0.951 0.953 0.949 0.949 0.945 0.947 0.944 0.944 0.943 0.942 0.941 0.939 0.939 0.937 0.935 0.935 0.934 0.932 –168.53 –171.29 –173.31 –175.06 –176.39 –177.67 –178.63 –179.67 179.56 178.68 177.76 177.04 176.52 175.74 174.85 174.49 173.49 173.09 172.34 171.67 171.15 170.39 169.68 169.08 168.44 167.71 1.762 1.470 1.257 1.109 0.986 0.887 0.813 0.745 0.695 0.642 0.606 0.569 0.539 0.514 0.490 0.469 0.450 0.433 0.417 0.405 0.389 0.381 0.367 0.362 0.349 0.345 87.95 85.37 82.85 80.56 78.66 76.34 74.74 72.54 71.11 69.33 67.29 65.99 63.77 63.03 61.09 59.69 58.28 56.51 55.27 54.21 52.05 51.64 49.25 48.87 46.91 45.70 0.016 0.017 0.018 0.019 0.019 0.020 0.021 0.022 0.023 0.024 0.025 0.027 0.028 0.028 0.030 0.031 0.032 0.033 0.035 0.035 0.037 0.037 0.039 0.040 0.042 0.043 28.84 30.78 33.13 34.66 36.58 37.51 39.65 40.13 41.96 42.04 43.11 43.61 44.63 44.29 45.10 45.21 45.64 45.49 45.64 45.64 45.69 45.57 45.53 45.27 45.08 44.96 0.898 0.899 0.898 0.904 0.898 0.900 0.900 0.898 0.893 0.899 0.891 0.900 0.889 0.901 0.887 0.899 0.887 0.894 0.893 0.889 0.889 0.884 0.887 0.881 0.884 0.879 178.40 177.62 177.29 176.14 175.81 174.70 174.77 173.68 173.28 172.53 171.81 171.47 170.58 170.35 169.32 168.90 168.11 167.59 166.58 166.01 164.90 164.75 163.54 163.26 161.99 161.45 6/8 ¡ electronic components Typical S Parameters KGF1608 VDS = 3.4 V , IDS = 560 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 7/8 ¡ electronic components KGF1608 PACKAGE DIMENSIONS 1.1±0.2 0.51±0.15 0.5±0.05 4.4±0.15 1.9±0.15 3.0±0.15 6.3±0.15 2.80 3.7±0.15 1.5±0.15 0.125±0.05 3.8±0.15 3.5±0.15 2.0 2.05 2.85 METALIZATION (Unit: mm) Package material Lead frame material Pin treatment plate thickness Al203 Fe-Ni-Co alloy Ni/Au plating Au:1.0 mm or more 3.4 5.6 MAX 4.2±0.15 8/8