MR27V852DTP

¡ Semiconductor MR27V852D 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION 1A The MR27V852D is a 8Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 524,288 word x 16bit and 1,048,576 word x 8bit. The MR27V852D operates on a single +3.3V power supply and is TTL compatible. The MR27V852D provides Page mode which can greatly reduce the read access time. Since the MR27V852D operates asynchronously , external clocks are not required , making this device easy-to-use. The MR27V852D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in 42-pin DIP , 44-pin SOP or 44-pin TSOP packages. FEATURES • 524,288 word x 16bit / 1,048,576 word x 8bit electrically switchable configuration • Single +3.3V power supply • Access time 80ns Page mode access time 30ns • Input / Output TTL compatible • Three-state output • Packages 42-pin plastic DIP (DIP42-P-600-2.54) (Product name : MR27V852DRA) 44-pin plastic SOP (SOP44-P-600-1.27-K) (Product name : MR27V852DMA) 44-pin plastic TSOP (TSOP II 44-P-400-0.80-K) (Product name : MR27V852DTP) November 1999 1/10 MR27V852D PIN CONFIGURATION (TOP VIEW) A18 1 A17 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 CE 11 VSS 12 OE 13 D0 14 D8 15 D1 16 D9 17 D2 18 D10 19 D3 20 D11 21 42 NC 41 A8 40 A9 39 A10 38 A11 37 A12 36 A13 35 A14 34 A15 33 A16 32 BYTE/Vpp 31 VSS 30 D15/A-1 29 D7 28 D14 27 D6 26 D13 25 D5 24 D12 23 D4 22 VCC 42-pin DIP NC 1 A18 2 A17 3 A7 4 A6 5 A5 6 A4 7 A3 8 A2 9 A1 10 A0 11 CE 12 VSS 13 OE 14 D0 15 D8 16 D1 17 D9 18 D2 19 D10 20 D3 21 D11 22 44 NC 43 NC 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 NC 1 A18 2 A17 3 A7 4 A6 5 A5 6 A4 7 A3 8 A2 9 A1 10 A0 11 44 NC 43 NC 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 33 BYTE/Vpp 32 VSS 31 D15/A-1 30 D7 29 D14 28 D6 27 D13 26 D5 25 D12 24 D4 23 VCC 33 BYTE/Vpp CE 12 VSS 13 32 VSS 31 D15/A-1 OE 14 30 D7 29 D14 28 D6 27 D13 26 D5 25 D12 24 D4 23 VCC 44-pin SOP D0 15 D8 16 D1 17 D9 18 D2 19 D10 20 D3 21 D11 22 44-pin TSOP (II) PIN NAMES D15/A-1 A0 - A18 D0 - D14 CE OE VCC VSS BYTE/VPP NC Address input Data output Chip enable Output enable FUNCTIONS Data output / Address input Power supply voltage GND Mode switch / Program power supply voltage Non connection 2/10 MR27V852D BLOCK DIAGRAM A-1 X8/X16 Switch CE OE BYTE/VPP PGM CE OE Column Decoder A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 Row Decoder Memory Matrix Address Buffer 524,288X16-Bit or 1,048,576X8-Bit Multiplexer & Page Data Latch Output Buffer D0 D1 D2 D3 D4 D5 D6 D7 D8 D10 D9 D12 D14 D15 D11 D13 In 8-bit output mode, these pins are three-stated and pin D15 functions as the A-1 address pin. FUNCTION TABLE MODE READ (16-Bit) READ (8-Bit) OUTPUT DISABLE STAND-BY PROGRAM PROGRAM INHIBIT PROGRAM VERIFY * : Don't Care CE L L L H L H H OE BYTE/VPP L L H * H H L 9.75V 4.0V H L H L H L 3.3V DOUT VCC D0 - D7 D8 - D14 DOUT Hi-Z Hi-Z * Hi-Z * DIN Hi-Z DOUT D15/A-1 L/H 3/10 MR27V852D ABSOLUTE MAXIMUM RATINGS Parameter Operating temperature under bias Storage temperature Input voltage Output voltage Power supply voltage Program power supply voltage Power dissipation per package Symbol Topr Tstg VI VO VCC VPP PD relative to VSS Condition Value 0 to 70 -55 to 125 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 -0.5 to 5 -0.5 to 11.5 1.0 Unit °C °C V V V V W RECOMMENDED OPERATING CONDITIONS FOR READ (Ta=0 to 70°C) Parameter VCC power supply voltage VPP power supply voltage Input "H" level Input "L" level Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. Symbol VCC VPP VIH VIL VCC=3.0V-3.6V Condition Min. 3.0 -0.5 2.2 -0.5** Typ. Max. 3.6 VCC+0.5 VCC+0.5* 0.6 Unit V V V V 4/10 MR27V852D ELECTRICAL CHARACTERISTICS (Read operation) DC Characteristics (VCC=3.3V±0.3V, Ta=0 to 70°C) Parameter Input leakage current Output leakage current VCC power supply current (Standby) VCC power supply current (Read) VPP power supply current Input "H" level Input "L" level Output "H" level Output "L" level Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. AC Characteristics (VCC=3.3V±0.3V, Ta=0 to 70°C) Parameter Address access cycle time Address access time Page access cycle time Page access time CE access time OE access time Output disable time Output hold time Symbol TC TACC TPC TPAC TCE TOE TCHZ TOHZ TOH Condition CE=OE=VIL OE=VIL CE=VIL OE=VIL CE=VIL CE=OE=VIL Min. 80 30 0 0 0 Max. 80 30 80 30 30 25 Unit ns ns ns ns ns ns ns ns ns Symbol ILI ILO ICS1 ICS2 ICCA IPP VIH VIL VOH VOL tc=80ns VPP=VCC IOH=-400µA IOL=2.1mA Condition VI=0 to Vcc VO=0 to Vcc CE=VCC CE=VIH CE=VIL , OE=VIH Min. 2.2 -0.5** 2.4 Typ. Max. 10 10 50 1 80 10 VCC+0.5* 0.6 0.4 Unit µA µA µA mA mA µA V V V V Measurement conditions Input signal level Input timing reference level Output load Output timing reference level 0V/3V 0.8V/2.0V 100pF 0.8V/2.0V 2.08V 800ohms Output 100pF 5/10 MR27V852D TIMING CHART NORMAL MODE READ CYCLE tC ADDRESS tCE CE tOH tOE OE tACC DOUT Hi-Z tCHZ tOHZ Valid Data Hi-Z PAGE MODE READ CYCLE tC A3 - A18 tPC A0 - A2 (Word mode) A-1 - A2 (Byte mode) tCE CE tCHZ tOE OE tACC DOUT Hi-Z Hi-Z tPAC tPAC tOHZ tOH tPC 6/10 MR27V852D ELECTRICAL CHARACTERISTICS (Programming operation) DC Characteristics (Ta=25°C±5°C) Parameter Input leakage current VPP power supply current (Program) VCC power supply current Input "H" level Input "L" level Output "H" level Output "L" level Program voltage VCC power supply voltage Voltage is relative to Vss Symbol ILI IPP2 ICC VIH VIL VOH VOL VPP VCC Condition VI=VCC+0.5V CE=VIL IOH=-400µA IOL=2.1mA Min. 3.0 -0.5 2.4 9.5 3.9 Typ. 9.75 4.0 Max. 10 50 80 VCC+0.5 0.8 0.45 10.0 4.1 Unit µA mA mA V V V V V V AC Characteristics (Vcc=4.0V±0.1V,Vpp=9.75V±0.25V,Ta=25°C±5°C) Parameter Address set-up time OE set-up time Data set-up time Address hold time Data hold time Output float delay from OE VPP voltage set-up time Program pulse width Data valid from OE Address hold from OE high Symbol TAS TOES TDS TAH TDH TOHZ TVS TPW TOE TAHO Condition Min. 100 2 100 2 100 0 2 9 0 Typ. 10 Max. 100 11 100 Unit ns µs ns µs ns ns µs µs ns ns Pin Check Function Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer. Setting up address as the following condition call the preprogrammed codes on device outputs. (Vcc=3.3V±0.3V,CE=OE=VIL,BYTE/Vpp=VIH,Ta=25°C±5°C) A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 DATA 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 VH* VH* 0 1 1 0 0 1 1 0 0 1 1 0 0 1 0 1 1 0 FF00 00FF FFFF * :VH=8V±0.25V 7/10 Other conditions MR27V852D Consecutive Programming Waveforms A0 - A18 tAS tPW CE tAH High OE tDS D0 - D15 tVS BYTE/VPP tDH Din Din Consecutive Program Verify Waveforms A0 - A18 High CE tACC OE tOE D0 - D15 tOHZ tAHO Dout 9.75V Dout BYTE/VPP 8/10 MR27V852D Program and Program Verify Cycle Waveforms A0 - A18 tAS tPW CE tOES OE tOHZ D0 - D15 tDS tDH tOE tOHZ tAHO Din 9.75V Dout BYTE/VPP PIN Capacitance (VCC=3.3V, Ta=25°C, f=1MHz) Parameter Input BYTE/VPP Output ( ) : DIP only Symbol CIN1 CIN2 COUT Condition VI=0V VO=0V Min. Typ. Max. 8 (10) 120 10 (12) Unit pF 9/10 MR27V852D Programming / Verify Flow Chart Programming Verify Start Start NO Pin Check NO Bad insertion Pin Check OK Address = First location VCC=3.0V VPP=3.0V NG OK Address = First location Bad insertion VCC=4.0V VPP=9.75V Program 10µs Verify (One Byte) PASS VCC=3.6V VPP=3.6V NO Increment Address Last Address ? YES Address = First location Verify (One Byte) PASS Device Passed X=0 Device Failed NG NG Verify (One Byte) PASS NO Increment Address Last Address ? YES VCC=3.0V VPP=3.0V YES X=2? NO Program 10µs X=X+1 NG Verify (One Byte) PASS Device Passed Device Failed 10/10