MSC23B236D-XXBS8

This version: Mar. 3. 1999 Semiconductor MSC23B236D-xxBS8/DS8 2,097,152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23B236D-xxBS8/DS8 is a fully decoded, 2,097,152-word x 36-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages and four 2Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a 72-pin glass epoxy single-inline package. This module supports any application where high density and large capacity of storage memory are required. FEATURES · 2,097,152-word x 36-bit organization · 72-pin Single Inline Memory Module MSC23B236D-xxBS8 : Gold tab MSC23B236D-xxDS8 : Solder tab · Single +5V supply ± 10% tolerance · Input : TTL compatible · Output : TTL compatible, 3-state · Refresh : 1024cycles/16ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode capability PRODUCT FAMILY Access Time (Max.) Family tRAC MSC23B236D-60BS8/DS8 MSC23B236D-70BS8/DS8 60ns 70ns tAA 30ns 35ns tCAC 15ns 20ns Cycle Time (Min.) Operating (Max.) Standby (Max.) Power Dissipation 110ns 130ns 2365mW 44mW 2145mW Semiconductor MSC23B236D MODULE OUTLINE MSC23B236D-xxBS8/DS8 107.95±0.2*1 101.19Typ. (Unit : mm) 9.3Max. 3.38Typ.  3.18 19.0±0.2 Typ. Typ. 10.16 6.35 2.03Typ. 6.35Typ. 5.7Min. 1 1.27± 0.1 R1.57 6.35 95.25 1.04Typ. 72 +0.1 1.27 -0.08 *1 The common size difference of the board width 12.5mm of its height is specified as ±0.2. The value above 12.5mm is specified as ±0.5. Semiconductor MSC23B236D PIN CONFIGURATION Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Pin Name VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 VCC NC A0 A1 A2 A3 A4 A5 A6 Pin No. 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Pin Name NC DQ4 DQ22 DQ5 DQ23 DQ6 DQ24 DQ7 DQ25 A7 NC VCC A8 A9 /RAS3 /RAS2 DQ26 DQ8 Pin No. 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 Pin Name DQ17 DQ35 VSS /CAS0 /CAS2 /CAS3 /CAS1 /RAS0 /RAS1 NC /WE NC DQ9 DQ27 DQ10 DQ28 DQ11 DQ29 Pin No. 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Pin Name DQ12 DQ30 DQ13 DQ31 VCC DQ32 DQ14 DQ33 DQ15 DQ34 DQ16 NC PD1 PD2 PD3 PD4 NC VSS Presence Detect Pins MSC23B236D -60BS8/DS8 NC NC NC NC MSC23B236D -70BS8/DS8 NC NC VSS NC Pin No. 67 68 69 70 Pin Name PD1 PD2 PD3 PD4 Semiconductor MSC23B236D BLOCK DIAGRAM A0-A9 /CAS0 /CAS1 /WE A0-A9 /RAS0 /RAS /LCAS /UCAS /WE /OE VSS DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC A0-A9 /RAS /LCAS /UCAS /WE /OE VSS /RAS1 A0-A9 /RAS /CAS1 /CAS2 /WE /OE VSS DQ1 DQ2 DQ8 DQ17 DQ1 DQ2 A0-A9 /RAS /CAS1 /CAS2 /WE /OE VSS VCC VCC A0-A9 /RAS2 /RAS /LCAS /UCAS /WE /OE VSS DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC A0-A9 /RAS /LCAS /UCAS /WE /OE VSS /RAS3 A0-A9 /RAS /CAS1 /CAS2 /WE /OE VSS /CAS2 /CAS3 VCC C1-C8 VSS DQ1 DQ2 DQ26 DQ35 DQ1 DQ2 A0-A9 /RAS /CAS1 /CAS2 /WE /OE VSS VCC VCC Semiconductor MSC23B236D ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VIN, VOUT VCC IOS PD * TOPR TSTG * Ta = 25°C Rating -1.0 to +7.0 -1.0 to +7.0 50 8 0 to +70 -40 to +125 Unit V V mA W °C °C Recommended Operating Conditions ( Ta = 0°C to +70°C ) Parameter Power Supply Voltage VSS Input High Voltage Input Low Voltage VIH VIL 0 2.4 -1.0 0 0 6.5 0.8 V V V Symbol VCC Min. 4.5 Typ. 5.0 Max. 5.5 Unit V Capacitance ( VCC = 5V ± 10%, Ta = 25°C, f = 1 MHz ) Parameter Input Capacitance (A0 - A9) Input Capacitance (/WE) Input Capacitance (/RAS0- /RAS3) Input Capacitance (/CAS0- /CAS3) I/O Capacitance (DQ0 - DQ35) Symbol CIN1 CIN2 CIN3 CIN4 CDQ Typ. Max. 53 65 20 35 20 Unit pF pF pF pF pF Note: Capacitance measured with Boonton Meter. Semiconductor MSC23B236D DC Characteristics (VCC = 5V ± 10%, Ta = 0°C to +70°C ) Symbo l MSC23B236D -60BS8/DS8 Min. Input Leakage Current ILI 0V ≤ VIN ≤ 6.5V; All other pins not under test = 0V DQ disable 0V ≤ VOUT ≤ 5.5V IOH = -5.0mA IOL = 4.2mA /RAS, /CAS cycling, tRC = m in. /RAS, /CAS = VIH Power supply current (Standby) ICC2 /RAS, /CAS ≥ VCC -0.2V /RAS cycling, /CAS = VIH, tRC = m in. /RAS cycling, /CAS before /RAS /RAS = VIL, /CAS cycling, tPC = m in. -80 Max. 80 MSC23B236D -70BS8/DS8 Min. -80 Max. 80 µA Parameter Condition Unit Note Output Leakage Current Output High Voltage Output Low Voltage Average Power Supply Current (Operating) ILO VOH VOL ICC1 -20 2.4 0 - 20 VCC 0.4 430 16 8 -20 2.4 0 - 20 VCC 0.4 390 16 8 µA V V mA mA mA 1, 2 1 1 Average Power Supply Current (/RAS only refresh) Average Power Supply Current (/CAS before /RAS refresh) Average Power Supply Current (Fast Page Mode) ICC3 - 430 - 390 mA 1, 2 ICC6 - 430 - 390 mA 1, 2 ICC7 - 390 - 360 mA 1, 3 Notes: 1. ICC Max. is specified as ICC f or output open condition. 2. Address can be changed once or less while /RAS = VIL. 3. Address can be changed once or less while /CAS = VIH. Semiconductor MSC23B236D AC Characteristics (1/2) (VCC = 5V ± 10%, Ta = 0°C to +70°C ) Note: 1, 2, 3 Parameter Symbol MSC23B236D -60BS8/DS8 Min. Random Read or Write Cycle Time Fast Page Mode Cycle Time Access Time from /RAS Access Time from /CAS Access Time from Column Address Access Time from /CAS Precharge Output Low Impedance Time from /CAS /CAS to Data Output Buffer Turn-off Delay Time Transition Time Refresh Period /RAS Precharge Time /RAS Pulse Width /RAS Pulse Width (Fast Page Mode) /RAS Hold Time /CAS Precharge Time (Fast Page Mode) /CAS Pulse Width /CAS Hold Time /CAS to /RAS Precharge Time /RAS Hold Time from /CAS Precharge /RAS to /CAS Delay Time /RAS to Column Address Delay Time Row Address Set-up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time Column Address to /RAS Lead Time Read Command Set-up Time Read Command Hold Time Read Command Hold Time referenced to /RAS tRC tPC tRAC tCAC tAA t CPA tCLZ tOFF tT tREF tRP tRAS tRASP tRSH tCP tCAS tCSH tCRP tRHCP tRCD tRAD tASR tRAH tASC tCAH tRAL tRCS tRCH tRRH 110 40 0 0 3 40 60 60 15 10 15 60 5 35 20 15 0 10 0 15 30 0 0 0 Max. 60 15 30 35 15 50 16 10K 100K 10K 45 30 MSC23B236D -70BS8/DS8 Min. 130 45 0 0 3 50 70 70 20 10 20 70 5 40 20 15 0 10 0 15 35 0 0 0 Max. 70 20 35 40 20 50 16 10K 100K 10K 50 35 ns ns ns ns ns ns ns ns ns ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 8 8 5 6 4, 5, 6 4, 5 4, 6 4 4 7 3 Unit Note Semiconductor MSC23B236D AC Characteristics (2/2) (VCC = 5V ± 10%, Ta = 0°C to +70°C ) Note: 1, 2, 3 Parameter Symbol MSC23B236D -60BS8/DS8 Min. Write Command Set-up Time Write Command Hold Time Write Command Pulse Width Write Command to /RAS Lead Time Write Command to /CAS Lead Time Data-in Set-up Time Data-in Hold Time /CAS Active Delay Time from /RAS Precharge /RAS to /CAS Set-up Time (/CAS before /RAS) /RAS to /CAS Hold Time (/CAS before /RAS) tWCS tWCH tWP tRWL tCWL tDS tDH tRPC tCSR 0 10 10 15 15 0 15 5 10 Max. MSC23B236D -70BS8/DS8 Min. 0 15 10 20 20 0 15 5 10 Max. ns ns ns ns ns ns ns ns ns Unit Note tCHR 10 - 10 - ns Semiconductor MSC23B236D Notes: 1. A start-up delay of 200µs is required after power-up, followed by a minimum of eight initialization cycles (/RAS only refresh or /CAS before /RAS refresh) before proper device operation is achieved. 2. The AC characteristics assumes tT = 5ns. 3. VIH(Min.) and VIL(Max.) are reference levels for measuring input timing signals. Transition time (tT) are measured between VIH and VIL. 4. This parameter is measured with a load circuit equivalent to 2TTL loads and 100pF. 5. Operation within the tRCD(Max.) limit ensures that tRAC(Max.) can be met. tRCD(Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD(Max.) limit, then the access time is controlled by tCAC. 6. Operation within the tRAD(Max.) limit ensures that tRAC(Max.) can be met. tRAD(Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD(Max.) limit, then the access time is controlled by tAA. 7. tOFF(Max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. 8. tRCH or tRRH must be satisfied for a read cycle.