MSM5117800D-60JS

Semiconductor MSM5117800D 2,097,152-Word ´ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE This version:Apr.1999 DESCRIPTION The MSM5117800D is a 2,097,152-word ´ 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117800D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5117800D is available in a 28-pin plastic SOJ, 28-pin plastic TSOP. FEATURES · · · · · · 2,097,152-word ´ 8-bit configuration Single 5V power supply, ±10% tolerance Input Output Refresh : TTL compatible, low input capacitance : TTL compatible, 3-state : 2048 cycles/32 ms Fast page mode, read modify write capability · · · CAS before RAS refresh, hidden refresh, RAS-only refresh capability Multi-bit test mode capability Package options: 28-pin 400mil plastic SOJ 28-pin 400mil plastic TSOP (SOJ28-P-400-1.27) (TSOPII28-P-400-1.27-K) (TSOPII28-P-400-1.27-L) (Product : MSM5117800D-xxJS) (Product : MSM5117800D-xxTS-K) (Product : MSM5117800D-xxTS-L) xx : indicates speed rank. PRODUCT FAMILY Family MSM5117800D-50 MSM5117800D-60 MSM5117800D-70 Access Time (Max.) tRAC 50ns 60ns 70ns tAA 25ns 30ns 35ns tCAC 13ns 15ns 20ns tOEA 13ns 15ns 20ns Cycle Time (Min.) 90ns 110ns 130ns Power Dissipation Operating (Max.) 550mW 495mW 440mW 5.5mW Standby (Max.) 1/14 MSM5117800D PIN CONFIGRATION (TOP VIEW) VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 WE 6 RAS 7 NC 8 A10R 9 A0 10 A1 11 A2 12 A3 13 VCC 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VSS DQ8 DQ7 DQ6 DQ5 CAS OE A9 A8 A7 A6 A5 A4 VSS VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 WE 6 RAS 7 NC 8 A10R 9 A0 10 A1 11 A2 12 A3 13 VCC 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VSS DQ8 DQ7 DQ6 DQ5 CAS OE A9 A8 A7 A6 A5 A4 VSS VSS DQ8 DQ7 DQ6 DQ5 CAS OE A9 A8 A7 A6 A5 A4 VSS 28 27 26 25 24 23 22 21 20 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 VCC DQ1 DQ2 DQ3 DQ4 WE RAS NC A10R A0 A1 A2 A3 VCC 28-Pin Plastic SOJ 28-Pin Plastic TSOP (K Type) 28-Pin Plastic TSOP (L Type) Pin Name A0–A9, A10R RAS CAS DQ1–DQ8 OE WE VCC VSS NC Function Address Input Row Address Strobe Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (5V) Ground (0V) No Connection 2/14 MSM5117800D BLOCK DIAGRAM RAS CAS Timing Generator WE I/O Controller OE 8 Output Buffers 8 DQ1 – DQ8 10 Column Address Buffers Internal Address Counter 10 Column Decoders 8 I/O Selector Input Buffers 8 A0 – A9 Refresh Control Clock Sense Amplifiers 8 8 10 A10R 1 Row Address Buffers 11 Row Decoders Word Drivers Memory Cells VCC On Chip VBB Generator On Chip IVCC Generator VSS 3/14 MSM5117800D ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to VSS Voltage VCC supply Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VIN, VOUT VCC IOS PD* Topr Tstg *: Ta = 25°C Rating -0.5 to VCC + 0.5 0.5 to 7.0 50 1 0 to 70 -55 to 150 Unit V V mA W °C °C Recommended Operating Conditions (Ta = 0°C to 70°C) Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol Min. 4.5 0 2.4 -0.5 *2 Typ. 5.0 0 ¾ ¾ Max. 5.5 0 Unit V V V V VCC VSS VIH VIL VCC + 0.5*1 0.8 Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied). *2. The input voltage is VSS - 2.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied). Capacitance (VCC = 5V ± 10%, Ta = 25°C, f=1MHz) Parameter Input Capacitance (A0 – A9, A10R) Input Capacitance (RAS, CAS, WE, OE) Output Capacitance (DQ1 – DQ8) Symbol Typ. ¾ ¾ ¾ Max. 5 7 7 Unit pF pF pF CIN1 CIN2 CI/O 4/14 MSM5117800D DC Characteristics (VCC = 5V ± 10%, Ta = 0°C to 70°C) MSM5117800 MSM5117800 MSM5117800 D-50 D-60 D-70 Unit Min. Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Average Power Supply Current (Operating) Power Supply Current (Standby) Average Power Supply Current (RAS-only Refresh) Power Supply Current (Standby) Average Power Supply Current (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode) VOH VOL IOH = -5.0mA IOL = 4.2mA 0V £ VI £ 6.5V ; ILI All other pins not under test = 0V DQ disable 0V £ VO £ VCC RAS, CAS cycling, tRC = Min. RAS, CAS = VIH ICC2 RAS, CAS ³ VCC – 0.2V RAS cycling, ICC3 CAS = VIH, tRC = Min. RAS = VIH, ICC5 CAS = VIL, DQ = enable RAS = cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tPC = Min. ¾ 80 ¾ 70 ¾ 60 mA 1,3 ¾ 5 ¾ 5 ¾ 5 mA 1 ¾ 100 ¾ 90 ¾ 80 mA 1,2 -10 10 -10 10 -10 10 mA 2.4 0 Max VCC 0.4 Min. 2.4 0 Max VCC 0.4 Min. 2.4 0 Max VCC 0.4 V V Parameter Symbol Condition Note ILO -10 10 -10 10 -10 10 mA ICC1 ¾ ¾ ¾ 100 ¾ ¾ ¾ 90 ¾ ¾ ¾ 80 mA 1,2 2 1 2 1 2 1 mA 1 ICC6 ¾ 100 ¾ 90 ¾ 80 mA 1,2 Notes: 1. 2. 3. ICC Max. is specified as ICC for output open condition. The address can be changed once or less while RAS = VIL. The address can be changed once or less while CAS = VIH. 5/14 MSM5117800D AC Characteristic (1/2) (VCC = 5V ± 10%, Ta = 0°C to 70°C) Note1,2,3,11,12 MSM5117800 D-50 Symbol Min. Random Read or Write Cycle Time Read Modify Write Cycle Time Fast Page Mode Cycle Time Fast Page Mode Read Modify Write Cycle Time Access Time from RAS Access Time from CAS Access Time from Column Address Access Time from CAS Precharge Access Time from OE Output Low Impedance Time from CAS CAS to Data Output Buffer Turnoff Delay Time OE to Data Output Buffer Turn-off Delay Time Transition Time Refresh Period RAS Precharge Time RAS Pulse Width tRC tRWC tPC tPRWC tRAC tCAC tAA tCPA tOEA tCLZ tOFF tOEZ tT tREF tRP tRAS 90 131 35 76 ¾ ¾ ¾ ¾ ¾ 0 0 0 3 ¾ 30 50 50 13 13 7 13 50 5 30 17 12 0 7 0 Max. ¾ ¾ ¾ ¾ 50 13 25 30 13 ¾ 13 13 50 32 ¾ 10,000 100,000 ¾ ¾ ¾ 10,000 ¾ ¾ ¾ 37 25 ¾ ¾ ¾ MSM5117800 D-60 Min. 110 155 40 85 ¾ ¾ ¾ ¾ ¾ 0 0 0 3 ¾ 40 60 60 15 15 10 15 60 5 35 20 15 0 10 0 Max. ¾ ¾ ¾ ¾ 60 15 30 35 15 ¾ 15 15 50 32 ¾ 10,000 100,000 ¾ ¾ ¾ 10,000 ¾ ¾ ¾ 45 30 ¾ ¾ ¾ MSM5117800 D-70 Min. 130 185 45 100 ¾ ¾ ¾ ¾ ¾ 0 0 0 3 ¾ 50 70 70 20 20 10 20 70 5 40 20 15 0 10 0 Max. ¾ ¾ ¾ ¾ 70 20 35 40 20 ¾ 20 20 50 32 ¾ 10,000 100,000 ¾ ¾ ¾ 10,000 ¾ ¾ ¾ 50 35 ¾ ¾ ¾ ns ns ns ns ns ns ns ns ns ns ns ns ns m s ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 5 6 4,5,6 4,5 4,6 4 4 4 7 7 3 Parameter Unit Note RAS Pulse Width (Fast Page Mode) tRASP RAS Hold Time RAS Hold Time referenced to OE CAS Precharge Time (Fast Page Mode) CAS Pulse Width CAS Hold Time CAS to RAS Precharge Time tRSH tROH tCP tCAS tCSH tCRP RAS Hold Time from CAS Precharge tRHCP RAS to CAS Delay Time RAS to Column Address Delay Time Row Address Set-up Time Row Address Hold Time Column Address Set-up Time tRCD tRAD tASR tRAH tASC 6/14 MSM5117800D AC Characteristic (2/2) (VCC = 5V ± 10%, Ta = 0°C to 70°C) Note1,2,3,11,12 MSM5117800 D-50 Min. Column Address Hold Time Column Address to RAS Lead Time Read Command Set-up Time Read Command Hold Time Read Command Hold Time referenced to RAS Write Command Set-up Time Write Command Hold Time Write Command Pulse Width OE Command Hold Time Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Set-up Time Data-in Hold Time OE to Data-in Delay Time CAS to WE Delay Time Column Address to WE Delay Time RAS to WE Delay Time CAS Precharge WE Delay Time CAS Active Delay Time from RAS Precharge RAS to CAS Set-up Time (CAS before RAS) RAS to CAS Hold Time (CAS before RAS) WE to RAS Precharge Time (CAS before RAS) WE Hold Time from RAS (CAS before RAS) RAS to WE Set-up Time (Test Mode) RAS to WE Hold Time (Test Mode) tCAH tRAL tRCS tRCH tRRH tWCS tWCH tWP tOEH tRWL tCWL tDS tDH tOED tCWD tAWD tRWD tCPWD tRPC tCSR tCHR tWRP tWRH tWTS tWTH 7 25 0 0 0 0 7 7 13 13 13 0 7 13 36 48 73 53 10 10 10 10 10 10 10 Max. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ MSM5117800 D-60 Min. 15 30 0 0 0 0 10 10 15 15 15 0 15 15 40 55 85 60 10 10 10 10 10 10 10 Max. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ MSM5117800 D-70 Min. 15 35 0 0 0 0 15 10 20 20 20 0 15 20 50 65 100 70 10 5 10 10 10 10 10 Max. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 9 9 9 9 10 10 8 8 9 Parameter Symbol Unit Note 7/14 MSM5117800D Notes: 1. A start-up delay of 200ms is required after power-up, followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. The AC characteristics assume tT = 5ns. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT) are measured between VIH and VIL. This parameter is measured with a load circuit equivalent to 2 TTL load and 100pF. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, then the access time is controlled by tCAC. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, then the access time is controlled by tAA. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieved the open circuit condition and are not referenced to output voltage levels. tRCH or tRRH must be satisfied for a read cycle. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS ³ tWCS (Min.), then the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD ³ tCWD (Min.), tRWD ³ tRWD(Min.), tAWD ³ tAWD (Min.) and tCPWD ³ tCPWD (Min.), then the cycle is a read modify write cycle and data out will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, then the condition of the data out (at access time) is indeterminate. 2. 3. 4. 5. 6. 7. 8. 9. 10. These parameters are referenced to the CAS leading edge in an early write cycle, and to the WE leading edge in an OE control write cycle, or a read modify write cycle. 11. The test mode is initiated by performing a WE and CAS before RAS refresh cycle. This mode is latched and remains in effect until the exit cycle is generated. The test mode specified in this data sheets is a 2-bit parallel test function, CA0 and CA1 are not used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high level. If any internal bits are not equal, the DQ pin will indicate a low level. The test mode is cleared and the memory device returned to its normal operating state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle. 12. In a test mode read cycle, the value of access time parameters is delayed for 5ns for the specified value. These parameters should be specified in test mode cycle by adding the above value to the specified value in this data sheet. 8/14 MSM5117800D Timing Chart · Read Cycle tRC tRAS tRP tCRP tCSH tRCD tRAD tRAL tASR tRAH tASC Column RAS VIH VIL CAS VIH VIL tRSH tCAS tCRP tCAH Address VIH VIL VIH VIL VIH VIL Row tRCS tAA tROH tOEA tCAC tRAC tRRH tRCH WE OE tOEZ tCLZ Valid Data-out tOFF DQ VOH VOL Open “H” or “L” · Write Cycle (Early Write) RAS VIH VIL tCRP tRCD tRAD tRC tRAS tRP tCSH tRSH tCAS tRAL tCRP CAS VIH VIL tASR tRAH tASC tCAH Column Address VIH VIL Row tCWL tWCS tWP tWCH WE VIH VIL VIH VIL VIH VIL tRWL OE tDS Valid Data-in tDH Open DQ “H” or “L” 9/14 · Read Modify Write Cycle MSM5117800D tRWC RAS VIH VIL tCRP CAS VIH VIL tASR Address VIH VIL tRAD tRAH tASC Column tRAS tRP tCSH tRCD tRSH tCAS tCWL tRWL tCRP tCAH Row tRCS tRWD tCWD tWP WE VIH VIL VIH VIL tRAC tCLZ tCAC tOEZ Valid Data-out tAWD tAA tOEA tOED tDS Valid Data-in tOEH OE tDH DQ VI/OH VI/OL “H” or “L” 10/14 MSM5117800D · Fast Page Mode Cycle tRASP RAS VIH VIL tCRP CAS VIH VIL tASR Address VIH VIL VIH VIL VIH VIL tRAC tCAC DQ VOH VOL tCLZ tCPA tOFF tOEZ Valid Data-out tRP tPC tRHCP tCP tCAS tRSH tCAS tRAL tASC Column tRCD tCAS tRAD tCSH tRAH tASC tCP tCRP tCAH tASC tCAH tCAH Row Column Column tRCS WE tAA tRCH tAA tOEA tRCS tRCH tAA tRCS tRCH tOEA tCPA tOFF tOEZ Valid Data-out tOEA tRRH OE tCAC tCLZ tCAC tCLZ tOEZ Valid Data-out tOFF “H” or “L” · Fast Page Mode Write Cycle (Early Write) tRASP RAS VIH VIL VIH VIL tASR Address VIH VIL Row tRP tPC tRHPC tCP tCAS tRSH tCAS tRAL tCAH Column tCRP tRCD tCAS tRAD tRAH tASC tCSH tCAH tCP tCRP CAS tASC tCAH tASC Column Column tWCS WE VIH VIL tDS DQ VIH VIL tWCH tWP tCWL tWCS tCWL tWCH tWP tDH Valid * Data-in tRWL tCWL tWCS tWP tWCH tDH Valid * Data-in tDS tDS Valid * Data-in tDH Note: OE = “H” or “L” “H” or “L” 11/14 MSM5117800D · Fast Page Mode Read Modify Write Cycle tRASP RAS VIH VIL VIH VIL tRAH tASR Address VIH VIL Row tCSH tRCD tRAD tASC C olum n tPRWC tCAS tCP tCAS tCAH tCAH tCWL tASC tCWL Column Column tRSH tCP tCAS tCAH tASC tCRP tRP CAS tRAL tRCS WE VIH VIL tRAC tAA tPWD tCWD tAWD tWP tDH tDS tOEA tRCS tCPWD tCWD tAWD tCPA tAA tOEA tOED tOEZ Ou tCLZ In tCLZ tWP tDS tDH tAA tRCS tCPWD tCWD tAWD tROH tCPA tOEA tOED tOEZ Ou In tCWL tRWL tWP tDH tDS OE VIH VIL tCAC VI/OH VI/OL tCLZ tOED tOEZ Out In tCAC tCAC DQ “H” or “L” · RAS-only Refresh Cycle tRC RAS VIH VIL tCRP CAS VIH VIL VIH VIL VOH VOL tASR tRAH tRPC tRAS tRP Address Row tOFF Open DQ Note: WE, OE = “H” or “H” or “L” 12/14 MSM5117800D · CAS before RAS Refresh Cycle tRP RAS VIH VIL tRPC tCP tCSR tCHR tOFF DQ VOH VOL tRAS tRC tRP tRPC CAS VIH VIL Open Note: WE, OE, Address = “H” or “H” or “L” · Hidden Refresh Read Cycle tRC RAS VIH VIL VIH VIL tASR Address VIH VIL VIH VIL tRAL tAA tROH OE VIH VIL VOH VOL Open tRAS tCRP tRCD tRAD tRAH Row tRC tRAS tRSH tRP tCHR tRP CAS tASC Column tCAH tRCS WE tCAC tRRH tOFF tOEA tRAC tCLZ Valid Data-out “H” or “L” tOEZ DQ 13/14 MSM5117800D Hidden Refresh Write Cycle tRC RAS VIH VIL VIH VIL tASR Address VIH VIL VIH VIL VIH VIL VIH VIL tDS tDH tWP tRAD tRAH Row tRC tRAS tRSH tRP tCHR tRAL tRP tRAS tCRP tRCD CAS tASC Column tCAH tWCS WE tWCH OE DQ Valid Data-in “H” or “L” 14/14