MSM51V16800B

¡ Semiconductor MSM51V16800B/BSL ¡ Semiconductor 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE MSM51V16800B/BSL E2G0074-17-41 DESCRIPTION The MSM51V16800B/BSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B/BSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ double-layer metal CMOS process. The MSM51V16800B/BSL is available in a 28-pin plastic SOJ or 28-pin plastic TSOP. The MSM51V16800BSL (the self-refresh version) is specially designed for lower-power applications. FEATURES • 2,097,152-word ¥ 8-bit configuration • Single 3.3 V power supply, ± 0.3 V tolerance • Input : LVTTL compatible, low input capacitance • Output : LVTTL compatible, 3-state • Refresh : 4096 cycles/64 ms, 4096 cycles/128 ms (SL version) • Fast page mode, read modify write capability • CAS before RAS refresh, hidden refresh, RAS-only refresh capability • CAS before RAS self-refresh capability (SL version) • Multi-bit test mode capability • Package options: 28-pin 400 mil plastic SOJ (SOJ28-P-400-1.27) (Product : MSM51V16800B/BSL-xxJS) 28-pin 400 mil plastic TSOP (TSOPII28-P-400-1.27-K) (Product : MSM51V16800B/BSL-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Family Access Time (Max.) tRAC tAA tCAC tOEA Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 90 ns 110 ns 130 ns 396 mW 324 mW 288 mW 1.8 mW/ 0.72 mW (SL version) MSM51V16800B/BSL-50 50 ns 25 ns 13 ns 13 ns MSM51V16800B/BSL-60 60 ns 30 ns 15 ns 15 ns MSM51V16800B/BSL-70 70 ns 35 ns 20 ns 20 ns 353 MSM51V16800B/BSL ¡ Semiconductor PIN CONFIGURATION (TOP VIEW) VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 WE 6 RAS 7 A11R 8 A10R 9 A0 10 A1 11 A2 12 A3 13 VCC 14 28-Pin Plastic SOJ 28 VSS 27 DQ8 26 DQ7 25 DQ6 24 DQ5 23 CAS 22 OE 21 A9R 20 A8 19 A7 18 A6 17 A5 16 A4 15 VSS VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 WE 6 RAS 7 A11R 8 A10R 9 A0 10 A1 11 A2 12 A3 13 VCC 14 28 VSS 27 DQ8 26 DQ7 25 DQ6 24 DQ5 23 CAS 22 OE 21 A9R 20 A8 19 A7 18 A6 17 A5 16 A4 15 VSS 28-Pin Plastic TSOP (K Type) Pin Name A0 - A8, A9R - A11R RAS CAS DQ1 - DQ8 OE WE VCC VSS Function Address Input Row Address Strobe Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (3.3 V) Ground (0 V) Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin. 354 ¡ Semiconductor MSM51V16800B/BSL BLOCK DIAGRAM Timing Generator WE I/O Controller OE 8 RAS CAS Output Buffers 8 DQ1 - DQ8 9 Column Address Buffers Internal Address Counter 9 Column Decoders 8 Input Buffers 8 A0 - A8 9 Refresh Control Clock Sense Amplifiers 8 I/O Selector 8 A9R - A11R 3 Row Row Address 12 DecoBuffers ders Word Drivers Memory Cells VCC On Chip VBB Generator VSS 355 MSM51V16800B/BSL ¡ Semiconductor ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VT IOS PD * Topr Tstg Rating –0.5 to 4.6 50 1 0 to 70 –55 to 150 Unit V mA W °C °C *: Ta = 25°C Recommended Operating Conditions Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 3.0 0 2.0 –0.3 Typ. 3.3 0 — — Max. 3.6 0 VCC + 0.3 0.8 (Ta = 0°C to 70°C) Unit V V V V Capacitance Parameter Input Capacitance (A0 - A8, A9R - A11R) Input Capacitance (RAS, CAS, WE, OE) Output Capacitance (DQ1 - DQ8) Symbol CIN1 CIN2 CI/O Typ. — — — (VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz) Max. 5 7 7 Unit pF pF pF 356 ¡ Semiconductor DC Characteristics Parameter Output High Voltage Output Low Voltage Input Leakage Current Symbol MSM51V16800B/BSL (VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Condition MSM51V16800 MSM51V16800 MSM51V16800 B/BSL-50 B/BSL-60 B/BSL-70 Unit Note Min. VOH IOH = –2.0 mA VOL IOL = 2.0 mA 0 V £ VI £ VCC + 0.3 V; ILI All other pins not under test = 0 V DQ disable 0 V £ VO £ VCC RAS, CAS cycling, tRC = Min. RAS, CAS = VIH ICC2 RAS, CAS ≥ VCC –0.2 V RAS cycling, ICC3 CAS = VIH, tRC = Min. RAS = VIH, ICC5 CAS = VIL, DQ = enable ICC6 RAS cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tPC = Min. tRC = 31.3 ms, ICC10 CAS before RAS, tRAS £ 1 ms RAS £ 0.2 V, CAS £ 0.2 V — 400 — 400 — 400 mA 1, 4, 5 — 90 — 80 — 70 mA 1, 3 — 110 — 90 — 80 mA 1, 2 — 5 — 5 — 5 mA 1 — 110 — 90 — 80 mA 1, 2 –10 10 –10 10 –10 10 mA 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 V V Output Leakage Current Average Power Supply Current (Operating) Power Supply Current (Standby) Average Power Supply Current (RAS-only Refresh) Power Supply Current (Standby) Average Power Supply Current (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode) Average Power Supply Current (Battery Backup) Average Power Supply Current (CAS before RAS Self-Refresh) ILO –10 10 –10 10 –10 10 mA ICC1 — — — — 110 2 0.5 200 — — — — 90 2 0.5 200 — — — — 80 2 0.5 200 mA 1, 2 mA mA 1 1, 5 ICCS — 300 — 300 — 300 mA 1, 5 Notes : 1. 2. 3. 4. 5. ICC Max. is specified as ICC for output open condition. The address can be changed once or less while RAS = VIL. The address can be changed once or less while CAS = VIH. VCC – 0.2 V £ VIH £ VCC + 0.3 V, –0.3 V £ VIL £ 0.2 V. SL version. 357 MSM51V16800B/BSL AC Characteristics (1/2) ¡ Semiconductor (VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12 Parameter Random Read or Write Cycle Time Read Modify Write Cycle Time Fast Page Mode Cycle Time Fast Page Mode Read Modify Write Cycle Time Access Time from RAS Access Time from CAS Access Time from Column Address Access Time from CAS Precharge Access Time from OE Output Low Impedance Time from CAS CAS to Data Output Buffer Turn-off Delay Time OE to Data Output Buffer Turn-off Delay Time Transition Time Refresh Period Refresh Period (SL version) RAS Precharge Time RAS Pulse Width RAS Pulse Width (Fast Page Mode) RAS Hold Time RAS Hold Time referenced to OE CAS Precharge Time (Fast Page Mode) CAS Pulse Width CAS Hold Time CAS to RAS Precharge Time RAS Hold Time from CAS Precharge RAS to CAS Delay Time RAS to Column Address Delay Time Row Address Set-up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time Column Address to RAS Lead Time Read Command Set-up Time Read Command Hold Time Read Command Hold Time referenced to RAS Symbol MSM51V16800 MSM51V16800 MSM51V16800 B/BSL-50 B/BSL-60 B/BSL-70 Unit Note Min. Max. — — — — 50 13 25 30 13 — 13 13 50 64 128 — 10,000 100,000 Min. 110 155 40 85 — — — — — 0 0 0 3 — — 40 60 60 15 15 10 15 60 5 35 20 15 0 10 0 10 30 0 0 0 Max. — — — — 60 15 30 35 15 — 15 15 50 64 128 — 10,000 100,000 Min. 130 185 45 100 — — — — — 0 0 0 3 — — 50 70 70 20 20 10 20 70 5 40 20 15 0 10 0 15 35 0 0 0 Max. — — — — 70 20 35 40 20 — 20 20 50 64 128 — 10,000 100,000 tRC tRWC tPC tPRWC tRAC tCAC tAA tCPA tOEA tCLZ tOFF tOEZ tT tREF tREF tRP tRAS tRASP tRSH tROH tCP tCAS tCSH tCRP tRHCP tRCD tRAD tASR tRAH tASC tCAH tRAL tRCS tRCH tRRH 90 131 35 76 — — — — — 0 0 0 3 — — 30 50 50 13 13 7 13 50 5 30 17 12 0 7 0 7 25 0 0 0 ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 8 8 5 6 4, 5, 6 4, 5 4, 6 4 4 4 7 7 3 13 — — — 10,000 — — — 37 25 — — — — — — — — — — — 10,000 — — — 45 30 — — — — — — — — — — — 10,000 — — — 50 35 — — — — — — — — 358 ¡ Semiconductor AC Characteristics (2/2) MSM51V16800B/BSL (VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12 Parameter Write Command Set-up Time Write Command Hold Time Write Command Pulse Width OE Command Hold Time Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Set-up Time Data-in Hold Time OE to Data-in Delay Time CAS to WE Delay Time Column Address to WE Delay Time RAS to WE Delay Time CAS Precharge WE Delay Time CAS Active Delay Time from RAS Precharge RAS to CAS Set-up Time (CAS before RAS) RAS to CAS Hold Time (CAS before RAS) Symbol MSM51V16800MSM51V16800 MSM51V16800 B/BSL-50 B/BSL-60 B/BSL-70 Unit Note Min. Max. — — — — — — — — — — — — — — — — — — — — — — — Min. 0 10 10 15 15 15 0 10 15 40 55 85 60 5 10 10 10 10 10 10 100 110 –50 Max. — — — — — — — — — — — — — — — — — — — — — — — Min. 0 15 10 20 20 20 0 15 20 50 65 100 70 5 10 10 10 10 10 10 100 130 –50 Max. — — — — — — — — — — — — — — — — — — — — — — — ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns 13 13 13 10 10 9 9 9 9 9 0 7 7 13 13 13 0 7 13 36 48 73 53 5 10 10 10 10 10 10 100 90 –50 tWCS tWCH tWP tOEH tRWL tCWL tDS tDH tOED tCWD tAWD tRWD tCPWD tRPC tCSR tCHR WE to RAS Precharge Time (CAS before RAS) tWRP WE Hold Time from RAS (CAS before RAS) tWRH RAS to WE Set-up Time (Test Mode) RAS to WE Hold Time (Test Mode) RAS Pulse Width (CAS before RAS Self-Refresh) RAS Precharge Time (CAS before RAS Self-Refresh) CAS Hold Time (CAS before RAS Self-Refresh) tWTS tWTH tRASS tRPS tCHS 359 MSM51V16800B/BSL Notes: ¡ Semiconductor 1. A start-up delay of 200 µs is required after power-up, followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. 2. The AC characteristics assume tT = 5 ns. 3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT) are measured between VIH and VIL. 4. This parameter is measured with a load circuit equivalent to 1 TTL load and 100 pF. The output timing reference levels are VOH = 2.0 V and VOL = 0.8 V. 5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, then the access time is controlled by tCAC. 6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, then the access time is controlled by tAA. 7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. 8. tRCH or tRRH must be satisfied for a read cycle. 9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD ≥ tCWD (Min.) , tRWD ≥ tRWD (Min.), tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write cycle and data out will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, then the condition of the data out (at access time) is indeterminate. 10. These parameters are referenced to the CAS leading edge in an early write cycle, and to the WE leading edge in an OE control write cycle, or a read modify write cycle. 11. The test mode is initiated by performing a WE and CAS before RAS refresh cycle. This mode is latched and remains in effect until the exit cycle is generated. The test mode specified in this data sheet is a 2-bit parallel test function. CA8 is not used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high level. If any internal bits are not equal, the DQ pin will indicate a low level. The test mode is cleared and the memory device returned to its normal operating state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle. 12. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the specified value. These parameters should be specified in test mode cycle by adding the above value to the specified value in this data sheet. 13. Only SL version. See ADDENDUM N for AC Timing Waveforms 360