EE-SM3

EE-SM3

  • 厂商:

    OMRON(欧姆龙)

  • 封装:

    PCB

  • 描述:

    OPTO SENSOR SLOT TYPE 3MM PCB

  • 数据手册
  • 价格&库存
EE-SM3 数据手册
Photomicrosensor EE-SM3 (Transmissive) Dimensions Note: Features All units are in millimeters unless otherwise indicated. • • • Two, 3.2 dia. holes 21±0.15 29 5.5 max. General-purpose model with a 3-mm-wide slot. PCB mounting type. With a red LED as an emitter element and a Photo-Darlington transistor as a detector element. Absolute Maximum Ratings (Ta = 25°C) Two, C1.7 5.5 max. 0.8 Item 0.8 6 min. Four, 0.45 10.2±0.2 Cross section BB Four, 0.45 4.2±0.2 IF 15 mA (see note 1) Pulse forward current IFP --- Reverse voltage VR 4V Collector--Emitter voltage VCEO 24 V Emitter--Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 75 mW (see note 1) Operating Topr --20°C to 60°C Storage Tstg --20°C to 80°C Soldering temperature Tsol 260°C (see note 2) Detector Cross section AA Internal Circuit K C A E Terminal No. A K C E Ambient temperature Unless otherwise specified, the tolerances are as shown below. Name Anode Cathode Collector Emitter Dimensions Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value Forward current Emitter 16 13±0.2 Symbol Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. Complete soldering within 10 seconds. Ordering Information Description Part number Photomicrosensor (Transmissive) EE-SM3 Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Forward voltage VF 2.0 V typ., 2.6 V max. IF = 15 mA Reverse current IR 0.01 µA typ., 5 µA max. VR = 4 V Peak emission wavelength λP 700 nm typ. IF = 3 mA Light current IL 1.5 mA min., 120 mA max. IF = 3 mA, VCE = 10 V Dark current ID 2 nA typ., 250 nA max. VCE = 10 V, 0 ℓx Leakage current ILEAK --- --- Collector--Emitter saturated voltage VCE (sat) 0.9 V typ. IF = 3 mA, IL = 0.5 mA Peak spectral sensitivity wavelength λP 750 nm typ. VCE = 10 V Rising time tr 180 µs typ. VCC = 5 V, RL = 100 Ω, IL = 10 mA Falling time tf 60 µs typ. VCC = 5 V, RL = 100 Ω, IL = 10 mA Emitter Detector EE-SM3 EE-SM3 Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Forward Current vs. Forward Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Ambient temperature Ta (°C) Ta = 25°C Light current I L (mA) IF =10 mA IF = 7 mA IF = 5 mA IF = 3 mA IF = 2 mA Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector--Emitter Voltage Characteristics (Typical) Light current I L (mA) IF Ta = 25°C VCE = 10 V IF = 3 mA VCE = 10 V Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 ℓx Dark current I D (nA) Pc Forward current I F (mA) Collector dissipation Pc (mW) Forward current I F (mA) Ta = 25°C IF = 1 mA Collector--Emitter voltage VCE (V) Response time tr, tf (µ s) VCC = 5 V Ta = 25°C Load resistance RL (kΩ) Sensing Position Characteristics (Typical) Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Ambient temperature Ta (°C) IF = 3 mA VCE = 10 V Ta = 25°C Center of optical axis Ambient temperature Ta (°C) Response Time Measurement Circuit Input Output 90 % 10 % Input Output Distance d (mm) NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4. R OMRON ELECTRONICS LLC OMRON CANADA, INC. OMRON ON–LINE One East Commerce Drive Schaumburg, IL 60173 885 Milner Avenue Toronto, Ontario M1B 5V8 847–882–2288 416-286-6465 Global – http://www.omron.com USA – http://www.omron.com/oei Canada – http://www.omron.com/oci Cat. No. GC NAPMS–1 02/03 Specifications subject to change without notice. Printed in U.S.A.
EE-SM3 价格&库存

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EE-SM3
  •  国内价格 香港价格
  • 1+67.507831+8.75030

库存:0