EE-SX1042

Photomicrosensor (Transmissive) EE-SX1042 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • 14.5-mm-tall model with a deep slot. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. Four, C0.3 ■ Absolute Maximum Ratings (Ta = 25°C) Item 0.5±0.05 Emitter 14.5 12±0.4 Detector 5 min. Four, 0.25 (11.2) (1.92) Cross section AA Ambient temperature K C A E 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Name Anode Cathode Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value IF Soldering temperature Internal Circuit Terminal No. A K C E Symbol Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 10 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Detector 36 EE-SX1042 Photomicrosensor (Transmissive) ■ Engineering Data Ambient temperature Ta (°C) IF = 10 mA Collector−Emitter voltage VCE (V) Response time tr, tf (μs) VCC = 5 V Ta = 25°C Light current IL (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 Relative light current IL (%) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70°C IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) 80 Distance d (mm) d 60 40 20 0 −2.0 Load resistance RL (kΩ) IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) IF = 20 mA Ta = 25°C Dark current ID (nA) Relative light current IL (%) Light current IL (mA) IF = 30 mA Ta = −30°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25°C IF = 40 mA Ta = 25°C VCE = 10 V Forward voltage VF (V) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) IF = 50 mA Light Current vs. Forward Current Characteristics (Typical) Relative light current IL (%) PC Forward current IF (mA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1042 Photomicrosensor (Transmissive) 37