EE-SY1200

Photomicrosensor (Reflective) EE-SY1200 Be sure to read Precautions on page 24. ■ Dimensions Detector center ■ Features Emitter center 1.9 (0.7) (1) (0.8) (0.8) 3.2 Note: Unless otherwise specified tolerances are ±0.15. No burrs dimensions are included in outline dimensions. The burrs dimensions are 0.15 MAX. Diagonal line indicate the region is part Au plating area. Recommended Soldering Pattern 2-1 2-1.7 1.2 Item IF 50*1 mA Pulse forward current IFP 500*2 mA Reverse voltage VR 4 V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5 V Collector current IC 20 mA Collector dissipation PC 50*1 mW Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C Reflow soldering temperature Tsol 240*3 °C 2-0.65 Name A Anode K Cathode C Collector E Emitter Note:1. The shaded portion in the above figure may cause shorting. Do not wire in this portion. 2. The dimensional tolerance for the recommended soldering pattern is ±0.1 mm. Detector Internal Circuit C Operating temperature A E K Symbol Rated value Unit Forward current 2-0.65 2-0.45 A Terminal No. Emitter K 0.7 C ■ Absolute Maximum Ratings (Ta=25°C) 2-1 1.1 E • Ultra-compact model. • PCB surface mounting type. • High S/N ratio (High light current / Low leakage current) • Recommended sensing distance = 1.0 to 4.0 mm *1 Refer to the temperature rating chart if the ambient temperature exceeds 25°C. *2 The pulse width is 10 μs maximum with a frequency of 100 Hz. *3 Complete soldering within 10 seconds for reflow soldering. ■ Electrical and Optical Characteristics (Ta=25°C) Item Emitter Value Unit MIN. TYP. MAX. Condition Forward voltage VF --- 1.2 1.4 V IF = 20 mA Reverse current IR --- --- 10 μA VR = 4 V λP --- 940 --- nm --- Light current 1 I L1 200 --- 1000 μA Light current 2 I L2 150 --- --- μA Peak emission wavelength Detector Symbol ID --- 2 200 nA IF = 10 mA, VCE = 2 V, Aluminum-deposited surface, d = 4 mm*1 IF = 4 mA, VCE = 2 V, Aluminum-deposited surface, d = 1 mm*1 VCE = 10 V, 0 lx Leakage current 1 I LEAK1 --- --- 500 nA IF = 10 mA, VCE = 2 V, with no reflection*2 Leakage current 2 I LEAK2 --- --- 200 nA IF = 4 mA, VCE = 2 V, with no reflection*2 VCE (sat) --- --- --- V --- λP --- 850 --- nm --- Rising time tr --- 30 --- μs VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1 Falling time tf --- 30 --- μs VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1 Dark current Collector-Emitter saturated voltage Peak spectral sensitivity wavelength *1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object. *2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which is reflected from surroundings of the Photomicrosensor and /or the background object. Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use. 154 EE-SY1200 Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) 50 40 30 20 PC -20 0 20 Light current IL (mA) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) 1,600 IF=10mA, d=1mm 1,400 Ta=-30°C Ta=+25°C 40 Ta=25°C 2,500 VCE=2V d=1mm 2,000 Ta=+70°C 30 1,500 20 1,000 10 500 00 40 60 80 100 Ambient temperature Ta (°C) 1,200 IF=7mA, d=1mm 1,000 IF=15mA, d=4mm 800 0.2 0.4 0.6 0.8 1 0 1.2 1.4 1.6 1.8 Forward voltage VF (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) 0 50 3,000 IF 10 -40 60 120 IF=10mA VCE=2V 110 100 VCE=2V d=4mm 0 5 10 15 20 Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) Dark current ID (nA) Forward current IF (mA) Collector dissipation PC (mW) 60 Light Current vs. Forward Current Characteristics (Typical) Light current IL (μA) Forward Current vs. Collector Dissipation Temperature Rating 10,000 1,000 100 10 90 1 IF=10mA, d=4mm 600 80 IF=4mA, d=1mm 400 0.1 IF=7mA, d=4mm IF=2mA, d=1mm 200 70 0.01 IF=4mA, d=4mm 0 0 2 4 IF=2mA, d=4mm 6 8 10 Collector-Emitter voltage VCE (V) -20 0 20 40 60 80 100 Ambient temperature Ta (°C) Sensing Distance Characteristics (Typical) 0.001 -30 -20 -10 tf 100 10 20 30 40 50 60 70 80 90 Ambient temperature Ta (°C) 120 Aluminum-deposited surface 90 d 80 IF=4mA, 10mA VCE=10V 70 60 50 Relative light current IL (%) tr 1,000 0 Sensing Position Characteristics (Typical) 100 10,000 Relative light current IL (%) Response time tr,tf (μs) Response Time vs. Load Resistance Characteristics (Typical) 60 -40 White 100 Black d L - 0 + 80 IF=10mA VCE=2V d=4mm 60 40 40 30 10 20 IF=4mA VCE=2V d=1mm 20 10 1 0.1 1 10 100 Load resistance RL (kΩ) Relative light current IL (%) Sensing Position Characteristics (Typical) 120 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Distance d (mm) Response Time Measurement Circuit Black 0 d - 0 0 + -4 -3 -2 -1 0 1 2 3 4 Card moving distance L (mm) Light Current Measurement Setup Diagram Aluminum-deposited surface t 80 tr tf 60 IF=10mA VCE=2V d=4mm Input IF=4mA VCE=2V d=1mm 20 0 -6 -5 t 90% 10% Output L 40 0 -6 Input White 100 0 -5 -4 -3 -2 IL d Glass VCC Output Sensor RL -1 0 1 2 3 4 Card moving distance L (mm) EE-SY1200 Photomicrosensor (Reflective) 155 ■ Tape and Reel Reel Dimension (Unit: mm) φ13±0.5 φ21±0.8 0.2 0.4 0.6 φ60±1 0.8 0.6 0.4 0.2 0.8 2±0.5 13 +10 180 -30 15.4±1 Tape Dimension (Unit: mm) 4 φ1.5 2 4 1.75 5.5 12 3.45 0.3 1.35 2.15 Part Mounting Direction • The devices are oriented in the rectangular holes in the carrier tape so that the edge with the LED faces the round feeding holes. 0.2 0.4 0.6 0.8 Tape Quantity 2,000 pcs./reel 156 EE-SY1200 Photomicrosensor (Reflective) 0.8 A 0.6 K Pull-out direction 0.4 C 0.2 E ■ Precautions to be taken on mounting Temperature Profile The reflow soldering can be implemented in two times complying with the following diagram. All the temperatures in the product must be within the diagram. Treatment after Opening 1. Reflow soldering must be done within 48 hours stored at the conditions of humidity 60%RH or less and temperature 5 to 25°C. 2. In case of long time storage after open, please mount at the conditions of humidity 70%RH or less and temperature 5 to 30°C within 1 week by using dry box or resealing with desiccant in moisture-proof bag by sealer. 240°C MAX. Baking before Mounting Temperature (°C) 1to 4°C/sec 200°C 10 sec MAX. 160°C MAX. 1to 4°C/sec 50 sec MAX. 1to 4°C/sec In case that it could not carry out the above treatment, it is able to mount by baking treatment. However baking treatment shall be limited only 1 time. Recommended conditions : 60°C, 12 to 24 hours (reeled one) 100°C, 8 to 24 hours (loose one) 120 sec MAX. Time (sec) Manual soldering The manual soldering cannot be applied to the products. There is a possibility that the housing is deformed and/or Au plating is peeled off by heat. Other Notes The use of infrared lamp causes the temperature at the resin to rise particularly too high. All the temperatures in the product must be within the above diagram. Do not immerse the resin part into the solder. Even if within the above temperature diagram, there is a possibility that the gold wire in the products is broken in case that the deformation of PCB gives the stress to the product terminals. Please confirm the conditions of the reflow soldering fully by actual solder reflow machine prior to the mass production use. ■ Storage and Handling after Opening Storage Conditions In order to avoid the absorption of moisture, the products shall be stored in a dry box with desiccant or in the following conditions. Storage temp. : 5 to 30°C Storage humidity : 70%RH or less EE-SY1200 Photomicrosensor (Reflective) 157