EE-X1041

Opto–Switch Transmissive Phototransistor output. Stable sensing at temperatures as high as 95°C. General-purpose model with a 5-mm-wide slot. PCB mounting type. High resolution with a 0.5-mm-wide aperture. EE–SX1041 Dimensions 0.2 max. 14±0.2 0.2 max. Internal Circuit K 6±0.2 0.5±0.1 A E C Terminal No. A K C E Name Anode Cathode Collector Emitter Optical axis Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance ±0.3 ±0.375 ±0.45 ±0.55 ±0.65 5 min. 3 mm max. Two, 0.7± 0.1 Four, 0.25 Four, 0.5 Two, 2.54 2.35±0.1 5.2±0.1 3 t mm v 6 6 t mm v 10 10 t mm v 18 18 t mm v 30 Two, 0.7±0.1 dia. Specifications Absolute Maximum Ratings (Ta = 25°C) Item Emitter Forward current Pulse forward current Reverse voltage Detector Collector–Emitter voltage Emitter–Collector voltage Collector current Collector dissipation Ambient temperature Operating Storage Soldering Note: IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Symbol Rated value 50 mA (see note 1) 1 A (see note 2) 4V 30 V --20 mA 100 mW (see note 1) –25°C to 95°C –30°C to 100°C 260°C 1.Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2.The pulse width is 10 µs maximum with a frequency of 100 Hz. Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector–Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling time IR λP IL ID ILEAK VCE (sat) λP tr tf Symbol VF Value 1.2 V typ., 1.5 V max. 0.01 µA typ., 10 µA max. 940 nm typ. 0.5 mA min., 14 mA max. 2 nA typ., 200 nA max. --0.1 V typ., 0.4 V max. 850 nm typ. 4 µs typ. 4 µs typ. IF = 30 mA VR = 4 V IF = 20 mA IF = 20 mA, VCE = 10 V VCE = 10 V, 0 x --IF = 20 mA, IL = 0.1 mA VCE = 10 V VCC = 5 V, RL = 100 Ω, IL = 5 mA VCC = 5 V, RL = 100 Ω, IL = 5 mA Condition Engineering Data Forward Current vs. Collector Dissipation Temperature Rating IF Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation Pc (mW) Light Current vs. Forward Current Characteristics (Typical) Ta = 25 °C VCE = 10 V Forward current I F (mA) Forward current I F (mA) PC Ta = –30°C Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward voltage VF (V) Light current I L (mA) Forward current IF (mA) Light Current vs. Collector–Emitter Voltage Characteristics (Typical) Ta = 25°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current I L (%) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0x Light current I L (mA) IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Dark current I D (nA) Collector–Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resistance Characteristics (Typical) Vcc = 5 V Ta = 25°C Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Response Time Measurement Circuit Input 90 % 10 % Relative light current I L (%) Response time tr, tf ( µ s) Output Input Output Load resistance RL (kΩ) Distance d (mm)