EESX1105

Photomicrosensor EE-SX1105 (Transmissive) Dimensions Note: Features All units are in millimeters unless otherwise indicated. Two, C0.7 • Ultra-compact with a sensor width of 4.9 mm and a slot width of 2 mm. • • • Low-height of 3.3 mm. Gate PCB mounting type. High resolution with a 0.4-mm-wide aperture. Absolute Maximum Ratings (Ta = 25°C) Optical axis Item Four, 0.5 Four, 0.4 Symbol Rated value Two, R0.15 5 min. Two, R0.3 Emitter Forward current IF 50 mA (see note 1) Pulse forward current IFP --- Reverse voltage VR 5V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO 4.5 V Four, Cross section AA Detector Internal Circuit Terminal No. A K Name Anode Cathode C E Collector Emitter Collector current IC 30 mA Collector dissipation PC 80 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 85°C Soldering temperature Tsol 260°C (see note 2) Ambient temperature Unless otherwise specified, the tolerances are ±0.2 mm. Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. Complete soldering within 3 seconds. Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.3 V typ., 1.6 V max. IF = 50 mA Reverse current IR 10 µA max. VR = 5 V Peak emission wavelength λP 950 nm typ. IF = 50 mA Light current IL 0.2 mA min. IF = 20 mA, VCE = 5 V Dark current ID 500 nA max. VCE = 10 V, 0 ȏx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 800 nm typ. VCE = 5 V Rising time tr 10 µs typ. VCC = 5 V, RL = 100 Ω, IF = 20 mA Falling time tf 10 µs typ. VCC = 5 V, RL = 100 Ω, IF = 20 mA Detector 82 EE-SX1105 EE-SX1105 Engineering Data Ambient temperature Ta (°C) IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) Dark current I D (nA) Ta = 25°C Ta = 25°C VCE = 5 V Forward voltage VF (V) Relative light current I L (%) Light current I L (mA) Light Current vs. Collector–Emitter Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Light current I L (mA) Forward current I F (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation Pc (mW) Forward current I F (mA) Forward Current vs. Collector Dissipation Temperature Rating VCE = 30 V VCE = 20 V VCE = 10 V IF = 10 mA Ambient temperature Ta (°C) RL = 1K Ω RL = 500 Ω Relative light current I L (%) Response time tr, tf ( µs) Ta = 25°C VCE = 5 V Sensing Position Characteristics (Typical) IF = 20 mA VCE = 5 V Ta = 25°C Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Relative light current I L (%) Collector–Emitter voltage VCE (V) Response Time vs. Light Current Characteristics (Typical) IF = 20 mA VCE = 5 V Ta = 25°C RL = 100 Ω Light current lt (mA) Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output 83