G3VM-31AR

G3VM-@AR@/@DR@ MOS FET Relays DIP 4-pin, High-current and Low-ON-resistance Type DIP MOS FET Relays in DIP 4-pin packages that achieve the low ON resistance and high switching capacity of a mechanical relay • Load voltage: 20 V, 30V, 40 V, 60 V, 100 V, or 200 V G3VM-@AR@/@DR@ • 20-V Relay: Continuous load current of 3 A max. • 30-V Relay: Continuous load current of 4 A max. • 40-V Relay: Continuous load current of 2.5 A max. Note: The actual product is marked differently from the image shown here. • 60-V Relay: Continuous load current of 3 A max. • 100-V Relay: Continuous load current of 2 A max. • 200-V Relay: Continuous load current of 0.7 A max. RoHS Compliant ■Application Examples • Communication equipment • Security equipment • Test & Measurement equipment • Industrial equipment ■Package • Power circuit ■Model Number Legend (Unit : mm, Average) G 3 V M -@ @ @ @ @ DIP 4-pin PCB Terminals 1 2 3 4 4.58 5 2. Contact form 3. Package 1. Load Voltage 1 : 1a (SPST-NO) A : DIP 4-pin with PCB terminals 2 : 20 V D : DIP 4-pin with surface-mounting 3 : 30 V terminals 4 : 40 V 6 : 60 V 10 : 100 V 20 : 200 V 4. Additional functions 5. Other informations R: Low ON resistance When specifications overlap, serial code is added in the recorded order. 3.65 6.4 Surface-mounting Terminals 4.58 3.65 6.4 Note: The actual product is marked differently from the image shown here. ■Ordering Information Stick packaging Package DIP4 Contact form 1a (SPST-NO) Load voltage Continuous load current (peak value) * (peak value) * Model PCB Terminals Surface-mounting Terminals Tape packaging Minimum package quantity Model Surface-mounting Terminals 20 V 3A G3VM-21AR G3VM-21DR G3VM-21DR(TR) 30 V 4A G3VM-31AR G3VM-31DR G3VM-31DR(TR05) 40 V 2.5 A G3VM-41AR G3VM-41DR G3VM-41DR(TR) 1,500 pcs. G3VM-61DR(TR) 1,500 pcs. 60 V 100 V 200 V 2A G3VM-61AR G3VM-61DR 3A G3VM-61AR1 G3VM-61DR1 1A G3VM-101AR G3VM-101DR 100 pcs. G3VM-61DR1(TR05) G3VM-101DR(TR) 1,500 pcs. 500 pcs. 500 pcs. 1,500 pcs. 2A G3VM-101AR1 G3VM-101DR1 G3VM-101DR1(TR05) 500 pcs. 0.7 A G3VM-201AR G3VM-201DR G3VM-201DR(TR05) 500 pcs. * The AC peak and DC value are given for the load voltage and continuous load current. Note: To order tape packaging for Relays with surface-mounting terminals, add “(TR)” or “(TR05)” to the end of the model number. 1 Minimum package quantity G3VM-@AR@/@DR@ MOS FET Relays ■Absolute Maximum Ratings (Ta = 25°C) Symbol G3VM-21AR G3VM-31AR G3VM-41AR G3VM-61AR G3VM-61AR1 G3VM-101AR G3VM-101AR1 G3VM-201AR G3VM-21DR G3VM-31DR G3VM-41DR G3VM-61DR G3VM-61DR1 G3VM-101DR G3VM-101DR1 G3VM-201DR Unit LED forward current IF 30 mA Repetitive peak LED forward current IFP 1 A LED forward current reduction rate ΔIF/°C -0.3 mA/°C LED reverse voltage VR Connection temperature TJ Input Item Output ON current reduction rate Pulse ON current VOFF 6 5 5 V 6 125 20 30 40 Ta ≥ 25°C °C 60 60 100 200 V IO 3 4 2.5 2 3 1 2 0.7 A ΔIO/°C -30 -40 -25 -20 -30 -10 -20 -7 mA/°C Ta ≥ 25°C lop 9 9 7.5 6 9 3 6 2.1 A t=100 ms, Duty=1/10 Connection temperature TJ 125 °C Dielectric strength between I/O * VI-O 2,500 Vrms AC for 1 min °C With no icing or condensation Ambient operating temperature Ambient storage temperature Soldering temperature Ta -40 to +85 -40 to +110 -40 to +110 -40 to +85 -40 to +85 -40 to +110 Tstg -55 to +125 °C − 260 °C 10 s * The dielectric strength between the input and output was checked by applying voltage between all pins as a group on the LED side and all pins as a group on the light-receiving side. 2 G3VM-@AR@/@DR@ Continuous load current (AC peak/DC) 6 100 μs pulses, 100 pps DIP Load voltage (AC peak/DC) 5 Measurement conditions G3VM-@AR@/@DR@ MOS FET Relays DIP Input ■Electrical Characteristics (Ta = 25°C) Item Symbol LED forward voltage VF Reverse current Capacitance between terminals IR CT G3VM-@AR@/@DR@ Trigger LED forward current IFT (IFC) Release LED forward current IFC (IFT) G3VM-21AR G3VM-31AR G3VM-41AR G3VM-61AR G3VM-61AR1 G3VM-101AR G3VM-101AR1 G3VM-201AR Unit G3VM-21DR G3VM-31DR G3VM-41DR G3VM-61DR G3VM-61DR1 G3VM-101DR G3VM-101DR1 G3VM-201DR Minimum 1.18 1.5 1.18 1.5 1.18 1.5 Typical 1.33 1.64 V 1.33 1.64 1.33 1.64 Maximum 1.48 1.8 1.48 1.8 1.48 1.8 Maximum 10 μA Typical Typical Minimum Typical Output Capacitance between terminals Capacitance between I/O terminals Insulation resistance between I/O terminals ILEAK 0.5 0.4 40 0.2 0.1 25 50 0.2 80 45 0.1 250 0.2 110 50 Typical − 0.01 150 200 − Typical CI-O Typical 0.8 Minimum 1000 Typical 108 tON 1 4 2 3 RL VDD VOUT 10% 90% t OFF G3VM-201AR/201DR: Io=0.7A Others: Io=1A mA IOFF=10 μA mΩ G3VM-31AR/31DR IF=5mA, t