G3VM66M

G3VM-66M MOS FET Relay Module MOS FET Relay in module package with SPDT (1C) • This model of operated by voltage (Rated input voltage is 5 VDC.) • Contribute to reduce the mounting space on the print circuit board by small package • Contact form 1c (SPDT) • Load Voltage 60 V • Surface-mounting RoHS Compliant Application Examples • Semiconductor test equipment Package Model Number Legend (Unit: mm) G 3 V M -@ @ @ 1 2 3 1. Load Voltage 6: 60 V 11 ±0.3 2. Contact form 6: 1c (SPDT) 3. Package M: Module 10±0.3 5±0.3 Ordering Information Construction Rated input voltage Enclosure rating Contact form Vcc VCBIT Fully Sealed 1c (SPDT) 5 VDC 5 VDC Continuous load current (peak value) Load voltage (peak value) Ta=25°C Ta=80°C 60 V 400 mA 130 mA MODEL Minimum package quantity G3VM-66M 50 pcs/tube Absolute maximum rating(Ta=25°C) Item Symbol VCC Input Rated input voltage VCBIT Output Rating Unit MIN 4.8 V MAX 5.2 V MIN 4.5 V MAX 5.5 V Measurement Connditions Io (peak)=400 mA Load voltage Voff (rms) 36 V Vcc=5 V, Io (peak)=400 mA Load voltage (peak value) Voff (peak) 60 V Vcc=5 V Continuous load current (peak value) Io (peak) Vcc=5 V Inrush current IINRUSH 400 mA 1,200 mA Vcc=5 V (1 cycle, 50 Hz/60 Hz) Dielectric strength between I/O Vi-o 300 Vrms Ambient storage temperature Tstg -30 to 100 °C With no icing condensation Ambient operating temperature Ta -30 to 80 °C With no icing condensation 45 to 85 % Ambient operating humidity 50/60 Hz , 1 min Electrical characteristics(Ta=25°C) Item Minimum Typical Maximum Unit Input current IINPUT - 7.3 15 mA Maximum resistance with output ON RON - 1 1.5 Ω Vcc=5 V, Io (peak)=400 mA, Voff (rms)=36 V Current leakage ILEAK - - - - See engineering data on page 2. Capacitance between output terminals COFF - 20 - pF Vs=0 V, f=100 MHz, t