1N4148TR

DATA SHEET www.onsemi.com Small Signal Diode 1N91x, 1N4x48, FDLL914, FDLL4x48 DO−35 Cathode is denoted with a black band ORDERING INFORMATION Part Number Marking Package Packing Method 1N914 914 DO−204AH (DO−35) Bulk 1N914−T50A 914 DO−204AH (DO−35) Ammo 1N914TR 914 DO−204AH (DO−35) Tape and Reel 1N914ATR 914A DO−204AH (DO−35) Tape and Reel Cathode Band SOD80 LL−34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL 1N914B 914B DO−204AH (DO−35) Bulk 1N914BTR 914B DO−204AH (DO−35) Tape and Reel 1N916 916 DO−204AH (DO−35) Bulk 1N916A 916A DO−204AH (DO−35) Bulk 1N916B 916B DO−204AH (DO−35) Bulk SOD−80 COLOR BAND MARKING 1N4148 4148 DO−204AH (DO−35) Bulk DEVICE 1N4148TA 4148 DO−204AH (DO−35) Ammo 1N4148−T26A 4148 DO−204AH (DO−35) Ammo 1N4148−T50A 4148 DO−204AH (DO−35) Ammo 1N4148TR 4148 DO−204AH (DO−35) Tape and Reel 1N4148−T50R 4148 DO−204AH (DO−35) Tape and Reel 1N4448 4448 DO−204AH (DO−35) Bulk 1N4448TR 4448 DO−204AH (DO−35) Tape and Reel FDLL914 Black SOD−80 Tape and Reel FDLL914A Black SOD−80 Tape and Reel FDLL914B Black SOD−80 Tape and Reel FDLL4148 Black SOD−80 Tape and Reel FDLL4148−D87Z Black SOD−80 Tape and Reel FDLL4448 Black SOD−80 Tape and Reel FDLL4448−D87Z Black SOD−80 Tape and Reel © Semiconductor Components Industries, LLC, 2002 August, 2021 − Rev. 5 1 FDLL914 FDLL914A FDLL914B FDLL4148 FDLL4448 1ST BAND BLACK BLACK BLACK BLACK BLACK -1st band denotes cathode terminal and has wider width Publication Order Number: 1N914/D 1N91x, 1N4x48, FDLL914, FDLL4x48 ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit VRRM 100 V Average Rectified Forward Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current If 400 mA IFSM 1.0 A 4.0 A TSTG −65 to +200 °C TJ −55 to +175 °C Maximum Repetitive Reverse Voltage Non−repetitive Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 ms Storage Temperature Range Operating Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of the diode may be impaired. THERMAL CHARACTERISTICS Parameter Symbol Max Unit PD 500 mW RqJA 300 °C Conditions Min Max Unit IR = 100 mA 100 Power Dissipation Thermal Resistance, Junction−to−Ambient ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 2) Symbol Parameter VR Breakdown Voltage VF Forward Voltage IR CT trr IR = 5.0 mA 75 914B / 4448 IF = 5.0 mA 0.62 0.72 V 916B IF = 5.0 mA 0.63 0.73 V 914 / 916 / 4148 IF = 10 mA 1.0 V 914A / 916A IF = 20 mA 1.0 V 916B IF = 20 mA 1.0 V 914B / 4448 IF = 100 mA 1.0 V VR = 20 V 0.025 mA VR = 20 V, TA = 150°C 50 mA VR = 75 V 5.0 mA 916/916A/916B/4448 VR = 0, f = 1.0 MHz 2.0 pF 914/914A/914B/4148 VR = 0, f = 1.0 MHz 4.0 pF IF = 10 mA, VR = 6.0 V (600 mA) Irr = 1.0 mA, RL = 100 W 4.0 ns Reverse Leakage Total Capacitance V Reverse Recovery Time V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Non−recurrent square wave PW = 8.3 ms. www.onsemi.com 2 1N91x, 1N4x48, FDLL914, FDLL4x48 TYPICAL PERFORMANCE CHARACTERISTICS 120 160 o Ta= 25 C o Ta=25 C 100 Reverse Current, I R [nA] Reverse Voltage, V R [V] 150 140 130 120 110 1 2 3 5 10 20 30 50 80 60 40 20 0 100 10 20 750 o 700 Forward Voltage, VF [mV] 500 Forward Voltage, VR [mV] 100 Ta= 25 C o Ta= 25 C 450 400 350 300 1 2 3 5 10 20 30 50 650 600 550 500 450 100 0.1 0.2 Forward Current, I F [uA] 0.3 0.5 1 2 3 5 10 Forward Current, I F [mA] Figure 3. Forward Voltage vs. Forward Current VF − 1 to 100 mA Figure 4. Forward Voltage vs. Forward Current VF − 0.1 to 10 mA 900 o Ta= 25 C 800 1.4 Forward Voltage, V F [mV] Forward Voltage, VF [mV] 70 Figure 2. Reverse Current vs. Reverse Voltage IR − 10 to 100 V 550 1.6 50 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs. Reverse Current BV − 1.0 to 100 mA 250 30 Reverse Voltage, VR [V] Reverse Current, I R [uA] 1.2 1.0 0.8 Typical o Ta= −40 C 700 o Ta= 25 C 600 500 o Ta= +65 C 400 300 0.6 10 20 30 50 100 200 300 500 800 0.01 Forward Current, I F [mA] 0.03 0.1 0.3 1 3 10 Forward Current, I F [mA] Figure 5. Forward Voltage vs. Forward Current VF − 10 to 800 mA Figure 6. Forward Voltage vs. Ambient Temperature VF - 0.01 - 20 mA (- 40 to +65°C) www.onsemi.com 3 1N91x, 1N4x48, FDLL914, FDLL4x48 TYPICAL PERFORMANCE CHARACTERISTICS 4.0 0.90 o o Reverse Recovery Time, t rr [ns] Total Capacitance (pF) TA = 25 C 0.85 0.80 0.75 0 2 4 6 8 10 12 Ta = 25 C 3.5 3.0 2.5 2.0 1.5 1.0 10 14 40 50 60 Figure 8. Reverse Recovery Time vs. Reverse Recovery Current 500 Power Dissipation, PD [mW] 500 400 Current (mA) 30 IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms Figure 7. Total Capacitance 300 I F(AV) − Average Rectified Current − mA 200 100 0 20 Reverse Recovery Current, I rr [mA] REVERSE VOLTAGE (V) 0 50 100 400 DO−35 and LL−34 / SOD−80 300 200 100 0 150 0 50 100 150 o Ambient Temperature ( oC) Temperature ( C) Figure 9. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA) Figure 10. Power Derating Curve www.onsemi.com 4 200 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 017AG ISSUE O DATE 31 AUG 2016 T50 = 25.40 MIN (2X) T26 = 14.00 MIN (2X) 4.56 3.05 0.533 0.460 NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC DO−204, VARIATION AH. B) HERMETICALLY SEALED GLASS PACKAGE. C) PACKAGE WEIGHT IS 0.137 GRAM. D) ALL DIMENSIONS ARE IN MILLIMETERS. 1.91 1.53 DOCUMENT NUMBER: DESCRIPTION: 98AON13443G AXIAL LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MiniMELF / SOD−80 CASE 100AD ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON79582E MINIMELF / SOD−80 DATE 30 APR 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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