1N4150 / FDLL4150
COLOR BAND MARKING
1ST BAND 2ND BAND
DEVICE
FDLL4150
BLACK
ORANGE
LL-34
DO-35
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Value
Units
W IV
Working Inverse Voltage
Parameter
50
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
400
mA
if
Recurrent Peak Forward Current
600
mA
if(surge)
Tstg
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
1.0
4.0
-65 to +200
A
A
°C
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
ã 1997 Fairchild Semiconductor Corporation
Max
Units
1N / FDLL 4150
500
3.33
300
mW
mW/°C
°C/W
1N4150 / FDLL4150
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
BV
Breakdown Voltage
IR = 5.0 µA
IR
Reverse Current
VF
Forward Voltage
CO
Diode Capacitance
VR = 50 V
VR = 50 V, TA = 150°C
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
VR = 0, f = 1.0 MHz
TRR
Reverse Recovery Time
TFR
Forward Recovery Time
IF = IR = 10 mA-200 mA, RL = 100Ω
IF = IR =200 mA-400 mA,RL = 100Ω
IF = 200 mA, VFR = 1.0 V
Min
Max
Units
100
100
620
740
860
920
1.0
2.5
nA
µA
mV
mV
mV
mV
V
pF
4.0
6.0
10
nS
nS
nS
75
540
660
760
820
0.87
V
1N4150 / FDLL4150
High Conductance Ultra Fast Diode
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not intended to be an exhaustive list of all such trademarks.
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CoolFET™
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FASTr™
GTO™
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MICROWIRE™
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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2. A critical component is any component of a life
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systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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